Controlled NiOx Defect Engineering to Harnessing Redox Reactions in Perovskite Photovoltaic Cells via Atomic Layer Deposition

Albeit the undesirable attributes of NiOx, such as low conductivity, unmanageable defects, and redox reactions occurring at the perovskite/NiOx interface, which impede the progress in inverted perovskite solar cells (i-PSCs), it is the most favorable choice of technology for industrialization of PSCs. In this study, we propose a novel Ni vacancy defect modulate approach to leverage the conformal growth and surface self-limiting reaction characteristics of the atomic layer deposition (ALD)-fabricated NiOx by varying the O2 plasma injection time (tOE) to induce self-doping. Consequently, NiOx thin films with enhanced conductivity, an appropriate Ni3+/Ni2+ ratio, stable surface states, and ultrathinness are realized as hole-transporting layers (HTLs) in p-i-n PSCs. As a result of these improvements, ALD-NiOx-based devices exhibit the highest power conversion efficiency (PCE) of 19.86% and a fill factor (FF) of 81.86%. Notably, the optimal interfacial defects effectively suppressed the severe reaction between the perovskite and NiOx. This suppression is evidenced by the lowest decay rate observed in a harsh environment, lasting for 500 consecutive hours. The proposed approach introduces the possibility of a hierarchical distribution of defects and offers feasibility for the fabrication of large-area, uniform, and high-quality films.

Recent Developments in Atomic Layer Deposition of Functional Overlayers in Perovskite Solar Cells

Over the last decade, research in organic-inorganic lead halide perovskite solar cells (PSCs) has gathered unprecedented momentum, putting the technology on the brink of full-scale commercialization. A wide range of strategies have been implemented for enhancing the power conversion efficiency of devices and modules, as well as improving stability toward high levels of irradiation, temperature, and humidity. Another key element in the path to commercialization is the scalability of device manufacturing, which requires large-scale deposition of conformal layers without compromising the delicate structure of the perovskite film. In this context, atomic layer deposition (ALD) tools excel in depositing high-quality conformal films with precise control of film composition and thickness over large areas at relatively low processing temperatures. In this commentary, we will briefly outline recent progress in PSC technology enabled by ALD tools, focusing on layers deposited above the absorber layer. These interlayers include charge transport layers, passivation layers, buffer layers, and encapsulation techniques. Additionally, we will discuss some of the challenges and potential avenues for research in PSC technology underpinned by ALD tools.

In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskite

Perovskite photovoltaics has achieved conversion efficiencies of 26.0% by optimizing the optoelectronic properties of the absorber and its interfaces with charge transport layers (CTLs). However, commonly adopted organic CTLs can lead to parasitic absorption and device instability. Therefore, metal oxides like atomic layer-deposited (ALD) SnO2 in combination with fullerene-based electron transport layers have been introduced to enhance mechanical and thermal stability. Instead, when ALD SnO2 is directly processed on the absorber, i.e., without the fullerene layer, chemical modifications of the inorganic fraction of the perovskite occur, compromising the device performance. This study focuses on the organic fraction, particularly the formamidinium cation (FA+), in a CsFAPb(I,Br)3 perovskite. By employing in situ infrared spectroscopy, we investigate the impact of ALD processing on the perovskite, such as vacuum level, temperature, and exposure to half and full ALD cycles using tetrakis(dimethylamido)-Sn(IV) (TDMA-Sn) and H2O. We observe that exposing the absorber to vacuum conditions or water half-cycles has a negligible effect on the chemistry of the perovskite. However, prolonged exposure at 100 °C for 90 min results in a loss of 0.7% of the total formamidinium-related vibrational features compared to the pristine perovskite. Supported by density functional theory calculations, we speculate that FA+ deprotonates and that formamidine desorbs from the perovskite surface. Furthermore, the interaction between TDMA-Sn and FA+ induces more decomposition of the perovskite surface compared to vacuum, temperature, or H2O exposure. During the exposure to 10 ALD half-cycles of TDMA-Sn, 4% of the total FA+-related infrared features are lost compared to the pristine perovskite. Additionally, IR spectroscopy suggests the formation and trapping of sym-triazine, i.e., a decomposition product of FA+. These studies enable to decouple the effects occurring during direct ALD processing on the perovskite and highlight the crucial role of the Sn precursor in affecting the perovskite surface chemistry and compromising the device performance.

Kinetic-Controlled Crystallization of α-FAPbI3 Inducing Preferred Crystallographic Orientation Enhances Photovoltaic Performance

Crystallization kinetic controls the crystallographic orientation, inducing anisotropic properties of the materials. As a result, preferential orientation with advanced optoelectronic properties can enhance the photovoltaic devices' performance. Although incorporation of additives is one of the most studied methods to stabilize the photoactive α-phase of formamidinium lead tri-iodide (α-FAPbI₃ ), no studies focus on how the additives affect the crystallization kinetics. Along with the role of methylammonium chloride (MACl) as a "stabilizer" in the formation of α-FAPbI₃ , herein, the additional role as a "controller" in the crystallization kinetics is pointed out. With microscopic observations, for example, electron backscatter diffraction and selected area electron diffraction, it is examined that higher concentration of MACl induces slower crystallization kinetics, resulting in larger grain size and [100] preferred orientation. Optoelectronic properties of [100] preferentially oriented grains with less non-radiative recombination, a longer lifetime of charge carriers, and lower photocurrent deviations in between each grain induce higher short-circuit current density (J_sc ) and fill factor. Resulting MACl40 mol% attains the highest power conversion efficiency (PCE) of 24.1%. The results provide observations of a direct correlation between the crystallographic orientation and device performance as it highlights the importance of crystallization kinetics resulting in desirable microstructures for device engineering.

Atomic layer deposition of SnO2 using hydrogen peroxide improves the efficiency and stability of perovskite solar cells

Low-temperature processed SnO₂ is a promising electron transporting layer in perovskite solar cells (PSCs) due to its optoelectronic advantage. Atomic layer deposition (ALD) is suitable for forming a conformal SnO₂ layer on a high-haze substrate. However, oxygen vacancy formed by the conventional ALD process using H₂O might have a detrimental effect on the efficiency and stability of PSCs. Here, we report on the photovoltaic performance and stability of PSCs based on the ALD-SnO₂ layer with low oxygen vacancies fabricated via H₂O₂. Compared to the ALD-SnO₂ layer formed using H₂O vapors, the ALD-SnO₂ layer prepared via H₂O₂ shows better electron extraction due to a reduced oxygen vacancy associated with the highly oxidizing nature of H₂O₂. As a result, the power conversion efficiency (PCE) is enhanced from 21.42% for H₂O to 22.34% for H₂O₂ mainly due to an enhanced open-circuit voltage. Operational stability is simultaneously improved, where 89.3% of the initial PCE is maintained after 1000 h under an ambient condition for the H₂O₂-derived ALD SnO₂ as compared to the control device maintaining 72.5% of the initial PCE.

Hole-Transporting Vanadium-Containing Oxide (V2O5-x) Interlayers Enhance Stability of α-FAPbI3-Based Perovskite Solar Cells (∼23%)

Perovskite solar cells (PSCs) have attracted tremendous interest due to their outstanding intrinsic photovoltaic properties, such as absorption coefficients, exciton binding energies, and long carrier lifetimes. Although the power conversion efficiency (PCE) of PSCs is close to the Si solar cells' PCE, device stability remains a challenge. In particular, the device stability is more critical in n-i-p normal structured PSCs, which show a higher efficiency than p-i-n inverted ones, simply because of the much lower stability of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spi). To prevent the devices from degrading performances arising both from perovskite's degradation and Spi instability, we prepare atomic layer deposition (ALD)-grown transition metal oxides for hole transport with efficient n-i-p PSCs. We demonstrate low-temperature (T_dep = 45 °C)-grown amorphous ALD-V₂O_5-x with oxygen-deficient traps on top of Spi as an interlayer, which prevents the devices' degradation in performance. By blocking moisture and oxygen, ALD-V₂O_5-x was able to greatly improve the devices' stability by preserving the photovoltaic α-FAPbI₃ phase while suppressing both Li ion diffusion from the additive and Au ions from the electrode. As a result, we successfully fabricate PSCs with passivation/hole-transporting bifunctional Spi/ALD-V₂O_5-x interlayers without sacrificing photovoltaic performances, and the device stability is significantly improved.

Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition

Organic-inorganic hybrid perovskites have shown tremendous potential for optoelectronic applications. Ion migration within the crystal and across heterointerfaces, however, imposed severe problems with material degradation and performance loss in devices. Encapsulating hybrid perovskite with a thin physical barrier can be essential for suppressing the undesirable interfacial reactions without inhibiting the desirable transport of charge carriers. Here, we demonstrated that nanoscale, pinhole-free Al₂O₃ layer can be coated directly on the perovskite CH₃NH₃PbI₃ using atomic layer deposition (ALD). The success can be attributed to a multitude of strategies including surface molecular modification and hybrid ALD processing combining the thermal and plasma-enhanced modes. The Al₂O₃ films provided remarkable protection to the underlying perovskite films, surviving by hours in solvents without noticeable decays in either structural or optical properties. The results advanced the understanding of applying ALD directly on hybrid perovskite and provided new opportunities to implement stable and high-performance devices based on the perovskites.

Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity

In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.

Tin Oxide Electron-Selective Layers for Efficient, Stable, and Scalable Perovskite Solar Cells

Perovskite solar cells (PSCs) have become a promising photovoltaic (PV) technology, where the evolution of the electron-selective layers (ESLs), an integral part of any PV device, has played a distinctive role to their progress. To date, the mesoporous titanium dioxide (TiO₂ )/compact TiO₂ stack has been among the most used ESLs in state-of-the-art PSCs. However, this material requires high-temperature sintering and may induce hysteresis under operational conditions, raising concerns about its use toward commercialization. Recently, tin oxide (SnO₂ ) has emerged as an attractive alternative ESL, thanks to its wide bandgap, high optical transmission, high carrier mobility, suitable band alignment with perovskites, and decent chemical stability. Additionally, its low-temperature processability enables compatibility with temperature-sensitive substrates, and thus flexible devices and tandem solar cells. Here, the notable developments of SnO₂ as a perovskite-relevant ESL are reviewed with emphasis placed on the various fabrication methods and interfacial passivation routes toward champion solar cells with high stability. Further, a techno-economic analysis of SnO₂ materials for large-scale deployment, together with a processing-toxicology assessment, is presented. Finally, a perspective on how SnO₂ materials can be instrumental in successful large-scale module and perovskite-based tandem solar cell manufacturing is provided.

Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells

Zirconium oxides were deposited using plasma-enhanced atomic layer deposition (PEALD) involving (2-(N-methylamino)1-MethylEthyleneCyclopentadienyl)Bis(DiMethylAmino)Zr (abbreviated as CMEN-Zr) and oxygen plasma as zirconium and oxygen sources. The zirconium oxide thin films demonstrate temperature-independent growth rates per cycle of 0.94 A/cycle at 150–215 °C. The deposited ZrO2 thin films were characterized using numerous analytical tools, i.e., X-ray photoelectron spectroscopy for chemical bonding state and composition, X-ray diffraction for crystallinity, atomic force microscopy for surface morphology, field-emission scanning electron microscopy for cross-sectional analysis, spectroscopic ellipsometry and UV–visible spectrophotometry for optical characterization, capacitance–voltage measurements for dielectric constants and atomic defects, and current–voltage characteristics for electrical information. The insulating features of the crystalline and stoichiometric ZrO2 films were implemented in the anode composites to evaluate the influence of ALD-based nano-features on the electrochemical performance of solid oxide fuel cells, with the main emphasis on anode performance. The presence of nanomaterials on Ni/YSZ anode composites is analyzed to determine the negative effects on electrochemical performance and the degradation of cell performance of solid oxide fuel cells (SOFCs). The artificial design was proven to be effective in controlling the cell performance as long as proper material design was adopted in SOFC electrodes.

Atomic/molecular layer deposition for energy storage and conversion

Energy storage and conversion systems, including batteries, supercapacitors, fuel cells, solar cells, and photoelectrochemical water splitting, have played vital roles in the reduction of fossil fuel usage, addressing environmental issues and the development of electric vehicles. The fabrication and surface/interface engineering of electrode materials with refined structures are indispensable for achieving optimal performances for the different energy-related devices. Atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques, the gas-phase thin film deposition processes with self-limiting and saturated surface reactions, have emerged as powerful techniques for surface and interface engineering in energy-related devices due to their exceptional capability of precise thickness control, excellent uniformity and conformity, tunable composition and relatively low deposition temperature. In the past few decades, ALD and MLD have been intensively studied for energy storage and conversion applications with remarkable progress. In this review, we give a comprehensive summary of the development and achievements of ALD and MLD and their applications for energy storage and conversion, including batteries, supercapacitors, fuel cells, solar cells, and photoelectrochemical water splitting. Moreover, the fundamental understanding of the mechanisms involved in different devices will be deeply reviewed. Furthermore, the large-scale potential of ALD and MLD techniques is discussed and predicted. Finally, we will provide insightful perspectives on future directions for new material design by ALD and MLD and untapped opportunities in energy storage and conversion.

SnO x Atomic Layer Deposition on Bare Perovskite-An Investigation of Initial Growth Dynamics, Interface Chemistry, and Solar Cell Performance

High-end organic-inorganic lead halide perovskite semitransparent p-i-n solar cells for tandem applications use a phenyl-C₆₁-butyric acid methyl ester (PCBM)/atomic layer deposition (ALD)-SnO _x electron transport layer stack. Omitting the PCBM would be preferred for manufacturing, but has in previous studies on (FA,MA)Pb(Br,I)₃ and (Cs,FA)Pb(Br,I)₃ and in this study on Cs_0.05FA_0.79MA_0.16PbBr_0.51I_2.49 (perovskite) led to poor solar cell performance because of a bias-dependent light-generated current. A direct ALD-SnO _x exposure was therefore suggested to form a nonideal perovskite/SnO _x interface that acts as a transport barrier for the light-generated current. To further investigate the interface formation during the initial ALD SnO _x growth on the perovskite, the mass dynamics of monitor crystals coated by partial p-i-n solar cell stacks were recorded in situ prior to and during the ALD using a quartz crystal microbalance. Two major finds were made. A mass loss was observed prior to ALD for growth temperatures above 60 °C, suggesting the decomposition of the perovskite. In addition, a mostly irreversible mass gain was observed during the first exposure to the Sn precursor tetrakis(dimethylamino)tin(IV) that is independent of growth temperature and that disrupts the mass gain of the following 20-50 ALD cycles. The chemical environments of the buried interface were analyzed by soft and hard X-ray photoelectron spectroscopy for a sample with 50 ALD cycles of SnO _x on the perovskite. Although measurements on the perovskite bulk below and the SnO _x film above did not show chemical changes, additional chemical states for Pb, Br, and N as well as a decrease in the amount of I were observed in the interfacial region. From the analysis, these states and not the heating of the perovskite were concluded to be the cause of the barrier. This strongly suggests that the detrimental effects can be avoided by controlling the interfacial design.

Inorganic Materials by Atomic Layer Deposition for Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PSCs) have received much attention with their rapid progress during the past decade, coming close to the point of commercialization. Various approaches in the process of PSC development have been explored with the motivation to enhance the solar cell power conversion efficiency—while maintaining good device stability from light, temperature, and moisture—and simultaneously optimizing for scalability. Atomic layer deposition (ALD) is a powerful tool in depositing pinhole-free conformal thin-films with excellent reproducibility and accurate and simple control of thickness and material properties over a large area at low temperatures, making it a highly desirable tool to fabricate components of highly efficient, stable, and scalable PSCs. This review article summarizes ALD’s recent contributions to PSC development through charge transport layers, passivation layers, and buffer and recombination layers for tandem applications and encapsulation techniques. The future research directions of ALD in PSC progress and the remaining challenges will also be discussed.

Photocorrosion at Irradiated Perovskite/Electrolyte Interfaces

Metal-halide perovskites transformed optoelectronics research and development during the past decade. They have also gained a foothold in photocatalytic and photoelectrochemical processes recently, but their sensitivity to the most commonly applied solvents and electrolytes together with their susceptibility to photocorrosion hinders such applications. Understanding the elementary steps of photocorrosion of these materials can aid the endeavor of realizing stable devices. In this Perspective, we discuss both thermodynamic and kinetic aspects of photocorrosion processes occurring at the interface of perovskite photocatalysts and photoelectrodes with different electrolytes. We show how combined in situ and operando electrochemical techniques can reveal the underlying mechanisms. Finally, we also discuss emerging strategies to mitigate photocorrosion (such as surface protection, materials and electrolyte engineering, etc.).

Choose Your Own Adventure: Fabrication of Monolithic All-Perovskite Tandem Photovoltaics

Metal halide perovskites (MHPs) have transfixed the photovoltaic (PV) community due to their outstanding and tunable optoelectronic properties coupled to demonstrations of high-power conversion efficiencies (PCE) at a range of bandgaps. This has motivated the field to push perovskites to reach the highest possible performance. One way to increase the efficiency is by fabricating multijunction solar cells, which can split the solar spectrum, reducing thermalization loss. Low-cost all-perovskite tandems have a real chance to soon exceed 30% PCE, which could transform the PV industry. Achieving this goal requires the identification of perovskite sub-cells that are both highly efficient and can be effectively integrated. Herein, it is discussed how to navigate the multiple-choice adventure in choosing between the myriad of options and considerations present when deciding what perovskite materials, contact layers, and processing tools to use. Some of the potential fabrication pitfalls often encountered in MHP based tandem PVs are highlighted, so that they can hopefully be avoided in the future.

Structural and electronic properties of SnO2 doped with non-metal elements

Crystal structure and electronic properties of SnO₂ doped with non-metal elements (F, S, C, B, and N) were studied using first-principles calculations. The theoretical results show that doping of non-metal elements cannot change the structure of SnO₂ but result in a slight expansion of the lattice volume. The most obvious finding from the analysis is that F-doped SnO₂ has the lowest defect binding energy. The doping with B and S introduced additional defect energy levels within the forbidden bandgap, which improved the crystal conductivity. The Fermi level shifts up due to the doping with B, F, and S, while the Fermi level of SnO₂ doped with C or N has crossed the impurity level. The Fermi level of F-doped SnO₂ is inside the conduction band, and the doped crystal possesses metallicity. The optical properties of SnO₂ crystals doped with non-metal elements were analyzed and calculated. The SnO₂ crystal doped with F had the highest reflectivity in the infrared region, and the reflectance of the crystals doped with N, C, S, and B decreased sequentially. Based on this theoretical calculations, F-doped SnO₂ is found to be the best photoelectric material for preparing low-emissivity coatings.

Progress of MOF-Derived Functional Materials Toward Industrialization in Solar Cells and Metal-Air Batteries

The cutting-edge photovoltaic cells are an indispensable part of the ongoing progress of earth-friendly plans for daily life energy consumption. However, the continuous electrical demand that extends to the nighttime requires a prior deployment of efficient real-time storage systems. In this regard, metal-air batteries have presented themselves as the most suitable candidates for solar energy storage, combining extra lightweight with higher power outputs and promises of longer life cycles. Scientific research over non-precious functional catalysts has always been the milestone and still contributing significantly to exploring new advanced materials and moderating the cost of both complementary technologies. Metal-organic frameworks (MOFs)-derived functional materials have found their way to the application as storage and conversion materials, owing to their structural variety, porous advantages, as well as the tunability and high reactivity. In this review, we provide a detailed overview of the latest progress of MOF-based materials operating in metal-air batteries and photovoltaic cells.

Unraveling the Impact of Hole Transport Materials on Photostability of Perovskite Films and p-i-n Solar Cells

We investigated the impact of a series of hole transport layer (HTL) materials such as Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), NiO_x, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), and polytriarylamine (PTA) on photostability of thin films and solar cells based on MAPbI₃, Cs_0.15FA_0.85PbI₃, Cs_0.1MA_0.15FA_0.75PbI₃, Cs_0.1MA_0.15FA_0.75Pb(Br_0.15I_0.85)₃, and Cs_0.15FA_0.85Pb(Br_0.15I_0.85)₃ complex lead halides. Mixed halide perovskites showed reduced photostability in comparison with similar iodide-only compositions. In particular, we observed light-induced recrystallization of all perovskite films except MAPbI₃ with the strongest effects revealed for Br-containing systems. Moreover, halide and β FAPbI₃ phase segregations were also observed mostly in mixed-halide systems. Interestingly, coating perovskite films with the PCBM layer spectacularly suppressed light-induced growth of crystalline domains as well as segregation of Br-rich and I-rich phases or β FAPbI₃. We strongly believe that all three effects are promoted by the light-induced formation of surface defects, which are healed by adjacent PCBM coating. While comparing different hole-transport materials, we found that NiO_x and PEDOT:PSS are the least suitable HTLs because of their interfacial (photo)chemical interactions with perovskite absorbers. On the contrary, polyarylamine-type HTLs PTA and PTAA form rather stable interfaces, which makes them the best candidates for durable p-i-n perovskite solar cells. Indeed, multilayered ITO/PTA(A)/MAPbI₃/PCBM stacks revealed no aging effects within 1000 h of continuous light soaking and delivered stable and high power conversion efficiencies in solar cells. The obtained results suggest that using polyarylamine-type HTLs and simple single-phase perovskite compositions pave a way for designing stable and efficient perovskite solar cells.

A noble-metal-free MoS2 nanosheet-coupled MAPbI3 photocatalyst for efficient and stable visible-light-driven hydrogen evolution

MoS₂ nanosheets (MoS₂ NSs) as a cocatalyst in situ coupled with MAPbI₃ lead to a superior composite photocatalyst for visible light H₂ evolution from HI splitting.

Atomic layer deposition of metal oxides for efficient perovskite single-junction and perovskite/silicon tandem solar cells

Aluminum-doped and undoped zinc oxide films were investigated as potential front and rear contacts of perovskite single and perovskite/silicon tandem solar cells. The films were prepared by atomic layer deposition (ALD) at low (<200 °C) substrate temperatures. The deposited films were crystalline with a single-phase wurtzite structure and exhibit excellent uniformity and low surface roughness which was confirmed by XRD and SEM measurements. Necessary material characterizations allow for realizing high-quality films with low resistivity and high optical transparency at the standard growth rate. Spectroscopic ellipsometry measurements were carried out to extract the complex refractive index of the deposited films, which were used to study the optics of perovskite single junction and perovskite/silicon tandem solar cells. The optics was investigated by three-dimensional finite-difference time-domain simulations. Guidelines are provided on how to realize perovskite solar cells exhibiting high short-circuit current densities. Furthermore, detailed guidelines are given for realizing perovskite/silicon tandem solar cells with short-circuit current densities exceeding 20 mA cm⁻² and potential energy conversion efficiencies beyond 31%.

The necessity of thin and highly doped metal oxide films is discussed for realizing efficient perovskite single and perovskite/silicon tandem solar cells.