Theoretical prediction of two-dimensional ferromagnetic Mn2X2 (X = As, Sb) with strain-controlled magnetocrystalline anisotropy

Two-dimensional (2D) magnetic materials with large and tunable magnetocrystalline anisotropy (MCA) provide unique opportunities to develop various spintronic devices. We, herein, propose an experimentally feasible 2D material platform, Mn2X2 (X = As, Sb), which is a family of intrinsic ferromagnet. Using first-principles calculations, we show that 2D Mn2X2 (X = As, Sb) with a robust ferromagnetic ground state exhibits not only a large perpendicular magnetic anisotropy (PMA), but also significant strain-driven modulation behaviors under external biaxial strain. The analysis of the results demonstrates that the dominant contribution to the change of MCA of Mn2As2 and Mn2Sb2 primarily arises from the Mn and Sb atoms, respectively. Moreover, we reveal that the underlying origin is the competitive mechanism for the spin-orbit coupling (SOC) between different orbitals and spin channels. These findings indicate that 2D Mn2X2 (X = As, Sb) provides a promising material platform for the next generation of ultra-low energy memory devices.

Chemical Approach Towards Broadband Spintronics on Nanoscale Pyrene Films

The injection of pure spin current into the non-magnetic layer plays a crucial role in transmitting, processing, and storing data information in the realm of spintronics. To understand broadband molecular spintronics, pyrene oligomer film (≈20 nm thickness) was prepared using an electrochemical method forming indium tin oxide (ITO) electrode/pyrene covalent interfaces. Permalloy (Ni80 Fe20 ) films with different nanoscale thicknesses were used as top contact over ITO/pyrene layers to estimate the spin pumping efficiency across the interfaces using broadband ferromagnetic resonance spectra. The spintronic devices are composed of permalloy/pyrene/ITO orthogonal configuration, showing remarkable spin pumping from permalloy to pyrene film. The large spin pumping is evident from the linewidth broadening of 5.4 mT at 9 GHz, which is direct proof of spin angular momentum transfer across the interface. A striking observation is made with the high spin-mixing conductance of ≈1.02×1018  m-2 , a value comparable to the conventional heavy metals. Large spin angular moment transfer was observed at the permalloy-pyrene interfaces, especially at the lower thickness of permalloy, indicating a strong spinterface effect. Pure spin current injection from ferromagnetic into electrochemically grown pyrene films ensures efficient broadband spin transport, which opens a new area in molecular broadband spintronics.

Non-uniform superlattice magnetic tunnel junctions

We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the linear, Gaussian, Lorentzian, and Pöschl-Teller width and height based profiles manifesting a sizable enhancement in the TMR (≈10⁴- 10⁶%) with a significant suppression in the switching bias (≈9 folds) owing to the physics of broad-band spin filtering. By exploring the negative differential resistance region in the current-voltage characteristics of the various Nu-SLTJs, we predict the Nu-SLTJs offer fastest spin transfer torque switching in the order of a few hundred picoseconds. We self-consistently employ the atomistic non-equilibrium Green's function formalism coupled with the Landau-Lifshitz-Gilbert-Slonczewski equation to evaluate the device performance of the various Nu-SLTJs. We also present the design of minimal three-barrier Nu-SLTJs having significant TMR (≈10⁴%) and large spin current for the ease of device fabrication. We hope that the class of Nu-SLTJs proposed in this work may lay the bedrock to embark on the exhilarating voyage of exploring various non-uniform superlattices for the next generation of spintronic devices.

Magnetoresistance of Ni/WSe2/Ni junctions: robustness against the thickness of WSe2

Magnetoresistive materials are vital for the development of storage devices. Using the first-principles transport simulations with nonequilibrium Green's function calculation, we investigate the magnetoresistive properties of Ni/WSe₂/Ni junctions withm-layers of WSe₂(m= 1, 2, ⋯ ,6). Form≤ 2, the junctions are metallic inspite of the semiconducting nature of few-layer WSe₂. However, the junctions exhibit transport gaps form> 2. Interestingly, magnetoresistance of the junctions stays around 6% when there are more than one layer of WSe₂in the center, which is closely related to the robust spacial variation of interfacial properties and can be attributed to no spin flipping in tunneling regions. Our results suggest that Ni/WSe₂/Ni junctions have a robust magnetoresistance which is insensitive to the thickness of WSe₂.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Strain-driven phase transition and spin polarization of Re-doped transition-metal dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDCs) are promising in spintronics due to their spin-orbit coupling, but their intrinsic non-magnetic properties limit their further development. Here, we focus on the energy landscapes of TMDC (MX2, M = Mo, W and X = S, Se, Te) monolayers by rhenium (Re) substitution doping under axial strains, which controllably drive 1H ↔ 1Td structural transformations. For both 1H and 1Td phases without strain, Re-doped TMDCs have an n-type character and are non-magnetic, but the tensile strain could effectively induce and modulate the magnetism. Specifically, 1H-Re0.5Mo0.5S2 gets a maximum magnetic moment of 0.69 μB at a 6% uniaxial tensile strain along the armchair direction; along the zigzag direction it exhibits a significant magnetic moment (0.49 μB) at a 2.04% uniaxial tensile strain but then exhibits no magnetism in the range of [5.10%, 7.14%]. By contrast, for 1Td-Re0.5Mo0.5S2 a critical uniaxial tensile strain along the zigzag direction reaches up to ∼9.18%, and a smaller uniaxial tensile strain (∼5.10%) along the zigzag direction is needed to induce the magnetism in 1Td-Re0.5M0.5Te2. The results reveal that the magnetism of Re-doped TMDCs could be effectively induced and modulated by the tensile strain, suggesting that strain engineering could have significant applications in doped TMDCs.

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spin-orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX ₂ (with M  =  Mo, W and X  =  S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.

Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

In the present study, by cutting 6,6,12-graphyne along vertical and horizontal directions, two kinds of 6,6,12-graphyne nanodots (6,6,12-GYNDs) with different sizes are obtained. Using these 6,6,12-GYNDs, we theoretically designed two kinds of 6,6,12-graphyne-based molecular magnetic tunnel junctions (MMTJs) and investigated their spin-dependent transport properties. Depending on the orientation of the 6,6,12-GYNDs and the connection of the 6,6,12-GYNDs to electrodes, our results show that the two MMTJs have novel transport behaviors. Two different net spin currents can be obtained by tuning the spin configurations and the maximal order of magnitudes of tunneling magnetoresistance values of the two MMTJs reaches 106%. The high spin-filtering ratio and large tunneling magnetoresistance value provide high sensitivity for practical applications. Therefore, the spin-filtering and tunneling magnetoresistance effects enable 6,6,12-graphyne-based MMTJs to be used as spintronic devices.

Pure spin current and phonon thermoelectric transport in a triangulene-based molecular junction

A triangulene-based molecular junction: a favorable spintronic device with pure spin current and efficient phonon thermoelectric transport.