Stacking sequences of black phosphorous allotropes and the corresponding few-layer phosphorenes

Lossy Mode Resonance Sensors Based on Anisotropic Few-Layer Black Phosphorus

Lossy mode resonance (LMR) sensors offer a promising avenue to surpass the constraints of conventional surface plasmon resonance (SPR) sensors by delivering enhanced label-free detection capabilities. A notable edge of LMR over SPR is its excitation potential by both transverse electric (TE) and transverse magnetic (TM) polarized light. Yet this merit remains underexplored due to challenges to achieving high sensing performance under both TM and TE polarization within a singular LMR model. This study introduces a theoretical model for an LMR prism refractive index sensor based on a MgF2-few layer black phosphorus-MgF2 configuration, which can achieve angular sensitivity nearing 90° refractive index unit-1 (RIU-1) for both polarizations. Leveraging the distinct anisotropic nature of black phosphorus, the figure of merit (FOM) values along its two principal crystal axes (zigzag and armchair) show great difference, achieving an impressive FOM of 1.178 × 106 RIU-1 along the zigzag direction under TE polarized light and 1.231 × 104 RIU-1 along the armchair direction under TM polarized light. We also provide an analysis of the electric field distribution for each configuration at its respective resonant conditions. The proposed structure paves the way for innovative applications of anisotropic-material-based LMR sensors in various applications.

Electrostatic Gating of Phosphorene Polymorphs

The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

Physical Fingerprints of the 2O-tαP Phase in Phosphorene Stacking

The 2O-tαP phase is a bilayer phosphorene stacking twisted by ∼70.5° standing out from all the potential candidates predicted by our previous work. Here, by linear response theory, we directly verified that the 2O-tαP phase preserves the intrinsic features of phonon spectrum of the existing AB phase, reflecting a stable thermodynamic behavior. Then we provided three distinct fingerprints to help finding this new phase: upon comparison to the existing shifting bilayer phosphorene, the in-plane elastic constants showed a much weaker anisotropic response, providing a characteristic mechanical criterion; the calculated Raman spectrum revealed for the low frequency rang the layer-breathing mode and the out-of-plane twisted mode, L-A¹ and L-A², both of which together stabilize the twisted structure; in particular, the simulated scanning tunneling microscope image presented recognizable cross stripes, which should withstand an examination of exfoliated bilayer and few-layer black phosphorus.