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Chen J, Wu G, Ding Y, Chen Q, Gao W, Zhang T, Jing X, Lin H, Xue F, Tao L. Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2056. [PMID: 37513067 PMCID: PMC10383381 DOI: 10.3390/nano13142056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/01/2023] [Accepted: 07/06/2023] [Indexed: 07/30/2023]
Abstract
The topological insulator 2D Bi2Se3 is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi2Se3 is prone to oxidation. Surface passivation using ligand agents after Bi2Se3 exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi2Se3 surface. In this work, the roles of halide anions (Cl-, Br-, and I-) in respect of the chemical properties of synthetic Bi2Se3 nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi2Se3 nanosheets prepared in a solution of tetrabutylammonium chloride (TBA+ and Cl-) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi2Se3-nanosheet-based electronic devices.
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Affiliation(s)
- Jiayi Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Guodong Wu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Yamei Ding
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Qichao Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Wenya Gao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Tuo Zhang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Xu Jing
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Huiwen Lin
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Feng Xue
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Li Tao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
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Tian SM, Meng J, Huang J, Li QX. Two-dimensional GaTe/Bi2Se3 heterostructure: A promising direct Z-scheme water splitting photocatalyst. CHINESE J CHEM PHYS 2020. [DOI: 10.1063/1674-0068/cjcp2006081] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Shu-min Tian
- Department of Chemical Physics & Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jie Meng
- Department of Chemical Physics & Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jing Huang
- School of Materials and Chemical Engineering, Anhui Jianzhu University, Hefei 230601, China
| | - Qun-xiang Li
- Department of Chemical Physics & Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
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Khatun S, Pal AJ. Dirac States of 2D Topological Insulators: Effect of Heterovalent Dopant-Content. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2019; 25:1437-1441. [PMID: 30975247 DOI: 10.1017/s143192761900045x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We have studied Bi2Se3 at its 2D-limit using scanning tunneling spectroscopy (STS). Bulk Bi2Se3 is a well-known topological insulator having gapless surface states. In the 2D limit, the interior of the material exhibits a band gap, whereas the periphery shows a gapless metallic state having a Dirac point. We demonstrate a method to tune the Fermi energy and hence the Dirac point of Bi2Se3 nanoplates through doping at the anionic site. For this purpose, STS measurements were carried out on the Bi2Se3 system. We have used bromide as a dopant, which turns the material to n-type in nature. As a result, STS studies infer that the Fermi energy (EF) shifted toward the conduction band and consequently the Dirac point could be found to move away from Fermi energy. Through STS measurements, we have demonstrated a correlation between the shift of Dirac point position and the dopant content. The size, shape, and compositions of Bi2Se3 nanoflakes and concentration of bromine in the doped nanostructures were determined using transmission electron microscopy, associated energy dispersive X-ray spectroscopy analysis, and X-ray diffraction.
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Affiliation(s)
- Salma Khatun
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Amlan J Pal
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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