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Li B, Zhang S, Xu L, Su Q, Du B. Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. Polymers (Basel) 2023; 15:4374. [PMID: 38006098 PMCID: PMC10675020 DOI: 10.3390/polym15224374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/07/2023] [Accepted: 11/07/2023] [Indexed: 11/26/2023] Open
Abstract
Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.
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Affiliation(s)
- Bixin Li
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi’an 710072, China
- School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
| | - Shiyang Zhang
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Lan Xu
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Qiong Su
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Bin Du
- School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China
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2
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Li H, Lan W, Wu X, Zhu Z, Wei B. Novel ternary organic resistive switching memory doped with bipolar materials. NANOTECHNOLOGY 2023; 34:115703. [PMID: 36595321 DOI: 10.1088/1361-6528/acac34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
Organic resistive switching memory (ORSM) shows great potential for neotype memory devices due to the preponderances of simple architecture, low power consumption, high switching speed and feasibility of large-area fabrication. Herein, solution-processed ternary ORSM devices doped with bipolar materials were achieved with high ON/OFF ratio and outstanding device stability. The resistive switching performance was effectively ameliorated by doping two bipolar materials (DpAn-InAc and DpAn-5BzAc) in different blending concentration into the PVK:OXD-7 donor-accepter system. Compared with the binary system (PVK: 30 wt% OXD-7), the ON/OFF ratios of the ternary devices doped with 6 wt% DpAn-5BzAc were greatly increased from 7.91 × 102to 4.98 × 104, with the operating voltage (∣Vset-Vreset∣) declined from 4.90 V to 2.25 V, respectively. Additionally, the stability of resistance state and uniformity of operating voltage were also significantly optimized for the ternary devices. For comparison, ternary devices doped with DpAn-InAc have been explored, which also achieved improved resistive switching behavior. A detailed analysis of electrical characteristics and the internal charge transfer properties of ORSM was performed to unveil the performance enhancement in ternary devices. Results indicate that the use of bipolar materials favors the efficient operation of OSRMs with proper energy level alignment and effective charge transfer.
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Affiliation(s)
- Haoyang Li
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
| | - Weixia Lan
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
- Shanghai Research Institute for Intelligent Science and Technology, Tongji University, Shanghai, 200092, People's Republic of China
| | - Xian Wu
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
| | - Zhiqiang Zhu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, People's Republic of China
| | - Bin Wei
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
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3
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Huang CY, Li H, Wu Y, Lin CH, Guan X, Hu L, Kim J, Zhu X, Zeng H, Wu T. Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications. NANO-MICRO LETTERS 2022; 15:16. [PMID: 36580150 PMCID: PMC9800676 DOI: 10.1007/s40820-022-00983-6] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Accepted: 10/31/2022] [Indexed: 05/19/2023]
Abstract
Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.
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Affiliation(s)
- Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Hanchen Li
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Ye Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Xiaoming Zhu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia.
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4
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Zaheer M, Bacha AUR, Nabi I, Lan J, Wang W, Shen M, Chen K, Zhang G, Zhou F, Lin L, Irshad M, Faridullah F, Arifeen A, Li Y. All Solution-Processed Inorganic, Multilevel Memristors Utilizing Liquid Metals Electrodes Suitable for Analog Computing. ACS OMEGA 2022; 7:40911-40919. [PMID: 36406554 PMCID: PMC9670282 DOI: 10.1021/acsomega.2c03893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Herein, we report a solution-processable memristive device based on bismuth vanadate (BiVO4) and titanium dioxide (TiO2) with gallium-based eutectic gallium-indium (EGaIn) and gallium-indium-tin alloy (GaInSn) liquid metal as the top electrode. Scanning electron microscopy (SEM) shows the formation of a nonporous structure of BiVO4 and TiO2 for efficient resistive switching. Additionally, the gallium-based liquid metal (GLM)-contacted memristors exhibit stable memristor behavior over a wide temperature range from -10 to +90 °C. Gallium atoms in the liquid metal play an important role in the conductive filament formation as well as the device's operation stability as elucidated by I-V characteristics. The synaptic behavior of the GLM-memristors was characterized, with excellent long-term potentiation (LTP) and long-term depression (LTD) linearity. Using the performance of our device in a multilayer perceptron (MLP) network, a ∼90% accuracy in the handwriting recognition of modified national institute of standards and technology database (MNIST) was achieved. Our findings pave a path for solution-processed/GLM-based memristors which can be used in neuromorphic applications on flexible substrates in a harsh environment.
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Affiliation(s)
- Muhammad Zaheer
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Aziz-Ur-Rahim Bacha
- Department
of Environmental Science and Engineering, Fudan University, Shanghai200433, China
- Department
of Environmental Sciences, COMSATS University
Islamabad, Abbottabad Campus, Abbottabad22060, Pakistan
| | - Iqra Nabi
- Department
of Environmental Science and Engineering, Fudan University, Shanghai200433, China
| | - Jun Lan
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Wenhui Wang
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Mei Shen
- SUSTech
Academy for Advanced Interdisciplinary Studies, Shenzhen518055, China
| | - Kai Chen
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Guobiao Zhang
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Feichi Zhou
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Longyang Lin
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
| | - Muhammad Irshad
- Department
of Environmental Sciences, COMSATS University
Islamabad, Abbottabad Campus, Abbottabad22060, Pakistan
| | - Faridullah Faridullah
- Department
of Environmental Sciences, COMSATS University
Islamabad, Abbottabad Campus, Abbottabad22060, Pakistan
| | - Awais Arifeen
- Department
of Environmental Sciences, COMSATS University
Islamabad, Abbottabad Campus, Abbottabad22060, Pakistan
| | - Yida Li
- School
of Microelectronics, Southern University
of Science and Technology, Shenzhen518055, China
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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6
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Liu F, Cai X, Liu K, Rafique S, Behrouznejad F, Bu K, Lü X, Wang J, Wu S, Wang X, Pan Y, Li X, Cai Y, Zhu J, Qiu Z, Yu A, Shen H, Wang J, Zhan Y. New Lead-free Organic-Inorganic Hybrid Semiconductor Single Crystals for a UV-Vis-NIR Broadband Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33850-33860. [PMID: 35852172 DOI: 10.1021/acsami.2c08116] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic hybrid semiconducting (OIHS) materials, which can detect broader spectral regions, are highly desired in several applications including biomedical imaging, night vision, and optical communications. Although lead (Pb)-halide perovskites have reached a mature research stage, high toxicity of Pb hinders their large-scale viability. Tin (Sn)-based perovskites are the most common OIHS broadband light absorbers that replace toxic Pb; however, they are extremely unstable due to the notorious Sn2+ oxidation. Herein, a novel, non-toxic, and solution-processed millimeter-sized OIHS single crystal [Ga(C3H7NO)6](I3)3 has been grown at room temperature. Both the absorption measurement and density functional theory calculations have confirmed a narrow indirect band gap of 1.32 eV. The corresponding photodetector based on this single crystal demonstrated excellent performance including an ultraviolet-visible-near infrared (UV-vis-NIR) response between 325 and 1064 nm, fast response time (trise/tdecay = 3.8 ms/5.4 ms), and profound air storage stability (41 h), thus outperforming most common photodetectors based on Sn-based perovskites. This work not only provides a profound understanding of this novel organic-inorganic single-crystal material but also demonstrates its great potential to realize the high-performance UV-vis-NIR broadband photodetectors.
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Affiliation(s)
- Fengcai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Xia Cai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Kai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Saqib Rafique
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Fatemeh Behrouznejad
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Jiao Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Yiyi Pan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Xiaoguo Li
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Yichen Cai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Junqiang Zhu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Zhijun Qiu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Anran Yu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai 200083, China
| | - Jianlu Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
- Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, 2005 Songhu Road, Shanghai 200438, P. R. China
| | - Yiqiang Zhan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University, Shanghai 200433, P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, 2005 Songhu Road, Shanghai 200438, P. R. China
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7
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Lin CH, Hu L, Guan X, Kim J, Huang CY, Huang JK, Singh S, Wu T. Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108616. [PMID: 34995372 DOI: 10.1002/adma.202108616] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.
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Affiliation(s)
- Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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8
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Mohamed E, Josten S, Marlow F. A purely ionic voltage effect soft triode. Phys Chem Chem Phys 2022; 24:8311-8320. [PMID: 35319550 DOI: 10.1039/d1cp04581d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report on the construction and characterization of an ionic soft triode intended to be based on interfacial ion adsorption and redox oxidizer depletion. The soft triode was built in a simple manner with no need for sophisticated or expensive materials. It does not utilize the control of a semiconducting channel, but an electrolyte. In different electrical circuit configurations, it can show amplification or memory effects. The device had an electrical current amplification reaching 52 and memory effects in the electrical resistance lasting for up to 6 h. These values were achieved by tuning the electrode interface, the electrolyte and diffusion properties. They are promising for neuromorphic applications.
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Affiliation(s)
- Elalyaa Mohamed
- MPI für Kohlenforschung, Kaiser-Wilhelm-Platz 1, Mülheim an der Ruhr 45470, Germany.
| | - Sabine Josten
- MPI für Kohlenforschung, Kaiser-Wilhelm-Platz 1, Mülheim an der Ruhr 45470, Germany.
| | - Frank Marlow
- MPI für Kohlenforschung, Kaiser-Wilhelm-Platz 1, Mülheim an der Ruhr 45470, Germany. .,Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Duisburg 47057, Germany
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9
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Zhang C, Li Y, Li Z, Jiang Y, Zhang J, Zhao R, Zou J, Wang Y, Wang K, Ma C, Zhang Q. Nanofiber Architecture Engineering Implemented by Electrophoretic-Induced Self-Assembly Deposition Technology for Flash-Type Memristors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3111-3120. [PMID: 34985856 DOI: 10.1021/acsami.1c22094] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Electrophoretic deposition (EPD) has been recognized as a promising large-scale film preparation technology for industrial application. Inspired by the conventional EPD method and the crystal diffusion growth strategy, we propose a modified electrophoretic-induced self-assembly deposition (EPAD) technique to control the morphologies of organic functional materials. Here, an ionic-type dye with a conjugated skeleton and strong noncovalent interactions, celestine blue (CB), is chosen as a module molecule for EPAD investigation. As expected, CB molecules can assemble into different nanostructures, dominated by applied voltage, concentration effect, and duration. Compared to a nanopillar layered packing structure formed by the traditional spin-coating method, the EPAD approach can produce a nanofiber structure under a fixed condition of 10 V/10 min. Intriguingly, a memristor device based on a pillar-like nanostructure exhibits WORM-type behavior, while a device based on nanofibers presents Flash memory performance. The assemble process and the memory mechanism are uncovered by molecular dynamics simulations and density-functional theory (DFT) calculations. This work endows the typical EPD technique with a fresh application scenario, where an in-depth study on the growth mechanism of nanofibers and the positive effect of unique morphologies on memristor performance are offered.
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Affiliation(s)
- Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Zhuang Li
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Jinlei Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Run Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yanan Wang
- School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Kuaibing Wang
- Jiangsu Key Laboratory of Pesticide Sciences, Department of Chemistry, College of Science, Nanjing Agricultural University, Nanjing 210095, China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Qichun Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
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10
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Liu Z, Cheng P, Li Y, Kang R, Zhang Z, Zuo Z, Zhao J. High Temperature CsPbBr xI 3-x Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58885-58897. [PMID: 34870980 DOI: 10.1021/acsami.1c13561] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBrxI3-x-based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBrxI3-x-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼102), stable endurance (103 cycles), and long retention time (104 s). The CsPbBrxI3-x-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI3, CsPbBrI2, and CsPbBr2I memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBr2I-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.
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Affiliation(s)
- Zehan Liu
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Pengpeng Cheng
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Yongfei Li
- School of Information Science and Engineering, Shandong University, Qingdao 266237, P. R. China
| | - Ruyan Kang
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Ziqi Zhang
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Zhiyuan Zuo
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
- Institute of Novel Semiconductors, Shandong University, Jinan 250100, P. R. China
| | - Jia Zhao
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
- School of Information Science and Engineering, Shandong University, Qingdao 266237, P. R. China
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11
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Antad V, Shaikh PA, Biswas A, Rajput SS, Deo S, Shelke MV, Patil S, Ogale S. Resistive Switching in HfO 2-x/La 0.67Sr 0.33MnO 3 Heterostructures: An Intriguing Case of Low H-Field Susceptibility of an E-Field Controlled Active Interface. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54133-54142. [PMID: 34726370 DOI: 10.1021/acsami.1c15082] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (∼0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically "active" nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.
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Affiliation(s)
- Vivek Antad
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
- Advanced Functional Materials Laboratory, Department of Physics, MES's Nowrosjee Wadia College of Arts and Science, Pune 411001, India
| | - Parvez A Shaikh
- Department of Physics, AKI's Poona College of Arts, Science and Commerce, Pune 411001, India
| | - Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Shatruhan Singh Rajput
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
| | - Shrinivas Deo
- Centre for Materials Characterization, CSIR-NCL, Pune 411008, India
| | - Manjusha V Shelke
- Physical and Materials Chemistry Division, Polymer and Advanced Materials Laboratory, CSIR-NCL, Pune 411008, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Shivprasad Patil
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
| | - Satishchandra Ogale
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
- Research Institute for Sustainable Energy (RISE), TCG Centres for Research and Education in Science and Technology (TCG-CREST), Kolkata 700091, India
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12
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Zhang C, Li Y, Ma C, Zhang Q. Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100086] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022] Open
Affiliation(s)
- Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Qichun Zhang
- Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 China
- Center of Super-Diamond and Advanced Films (COSDAF) City University of Hongkong Hong Kong SAR 999077 China
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13
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Lee S, Kim WB, Lee JM, Kim HJ, Choi JH, Jung HS. Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44577-44584. [PMID: 34495629 DOI: 10.1021/acsami.1c13210] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Owing to a low operation voltage, high on/off ratio, and tunable band gap, halide perovskites (HPs) are being conceived as an alternative to oxide or chalcogenide materials in resistive-switching (RS) memory devices. However, the HP-based RS memory devices face problems such as short endurance, low retention, and device stability. Herein, the oxide-passivated HP devices were fabricated by hybridizing the oxide sol-gel and halide adduct methods. The silicon oxide (SiO2)-passivation enhanced the device properties with an endurance of 6000 cycles and retention of 1.8 × 104 s. The study of activation energy using ionic conductivity and time-of-flight secondary-ion mass spectroscopy demonstrated that the migration path of the Ag ions is well-controlled by the SiO2 passivation layer. Various oxides were used as passivation materials. Especially, the zirconium oxide-passivated devices exhibit excellent properties with an endurance of 57 000 cycles and retention of 7.8 × 104 s. The high cohesive energy of oxides effectively increased the formation voltage by retarding the Ag-ion migration, leading to the improved endurance properties of the devices. This paper proposes a strategy for significantly improving the low endurance property of HP-based RS memory devices using the oxide passivation technology.
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Affiliation(s)
- SangMyeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae Myeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hee Jung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jin Hyuk Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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14
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Yang J, Cho H, Ryu H, Ismail M, Mahata C, Kim S. Tunable Synaptic Characteristics of a Ti/TiO 2/Si Memory Device for Reservoir Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:33244-33252. [PMID: 34251796 DOI: 10.1021/acsami.1c06618] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, we fabricate and characterize a Ti/TiO2/Si device with different dopant concentrations on a silicon surface for neuromorphic systems. We verify the device stack using transmission electron microscopy (TEM). The Ti/TiO2/p++Si device exhibits interface-type bipolar resistive switching with long-term memory. The potentiation and depression by the pulses of various amplitudes are demonstrated using gradual resistive switching. Moreover, pattern-recognition accuracy (>85%) is obtained in the neuromorphic system simulation when conductance is used as the weight in the network. Next, we investigate the short-term memory characteristics of the Ti/TiO2/p+Si device. The dynamic range is well-controlled by the pulse amplitude, and the conductance decay depends on the interval between the pulses. Finally, we build a reservoir computing system using the short-term effect of the Ti/TiO2/p+Si device, in which 4 bits (16 states) are differentiated by various pulse streams through the device that can be used for pattern recognition.
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Affiliation(s)
- Jinwoong Yang
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Hyojong Cho
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Hojeong Ryu
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Muhammad Ismail
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Chandreswar Mahata
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
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15
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Younis A, Lin CH, Guan X, Shahrokhi S, Huang CY, Wang Y, He T, Singh S, Hu L, Retamal JRD, He JH, Wu T. Halide Perovskites: A New Era of Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005000. [PMID: 33938612 DOI: 10.1002/adma.202005000] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 10/29/2020] [Indexed: 05/26/2023]
Abstract
Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.
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Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
- Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir Campus, Zallaq, Kingdom of Bahrain
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shamim Shahrokhi
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yutao Wang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tengyue He
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jose Ramon Duran Retamal
- Computer, Electrical and Mathematical Sciences and Engineering, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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16
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Miyadera T, Auchi Y, Yamamoto K, Ohashi N, Koganezawa T, Yaguchi H, Yoshida Y, Chikamatsu M. Insights into Microscopic Crystal Growth Dynamics of CH 3NH 3PbI 3 under a Laser Deposition Process Revealed by In Situ X-ray Diffraction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22559-22566. [PMID: 33961389 DOI: 10.1021/acsami.1c04488] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The process dynamics for the vacuum deposition of methylammonium lead iodide (MAPbI3) perovskite was analyzed by in situ X-ray diffraction using synchrotron radiation. MAPbI3 was fabricated by alternatingly supplying PbI2 and methylammonium iodide via a laser deposition system installed at the synchrotron beamline BL46XU at SPring-8, and in situ crystallization analysis was conducted. Microscopic insights into the crystallization were obtained, including observation of Laue oscillation during the PbI2 growth and octahedral unit (PbI6) rotation during the transformation into perovskite. On the basis of this analysis, conditions that favor the construction of atomically flat MAPbI3 perovskite films were deduced.
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Affiliation(s)
- Tetsuhiko Miyadera
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Yuto Auchi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
| | - Kohei Yamamoto
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Noboru Ohashi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Tomoyuki Koganezawa
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
| | - Hiroyuki Yaguchi
- Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
| | - Yuji Yoshida
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Masayuki Chikamatsu
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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17
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Chen W, Zhang F, Wang C, Jia M, Zhao X, Liu Z, Ge Y, Zhang Y, Zhang H. Nonlinear Photonics Using Low-Dimensional Metal-Halide Perovskites: Recent Advances and Future Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004446. [PMID: 33543536 DOI: 10.1002/adma.202004446] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 09/15/2020] [Indexed: 06/12/2023]
Abstract
Low-dimensional metal-halide perovskites have exhibited significantly superior nonlinear optical properties compared to traditional semiconductor counterparts, thanks to their peculiar physical and electronic structures. Their exceptional nonlinear optical characteristics make them excellent candidates for revolutionizing widespread applications. However, the research of nonlinear photonics based on low-dimensional metal-halide perovskites is in its infancy. There is a lack of comprehensive and in-depth summary of this research realm. Here, the state-of-the-art research progress related to third-and higher-order nonlinear optical properties of low-dimensional metal-halide perovskites with diverse crystal structures from 3D down to 0D, together with their practical applications, is summarized comprehensively. Critical discussions are offered on the fundamental mechanisms beneath their exceptional nonlinear optical performance from the physics viewpoint, attempting to disclose the role of intrinsic attributes (e.g., composition, bandgap, size, shape, and structure) and external modulation strategies (e.g., developing core-shell structures, transition metal ion doping, and hybridization with dielectric microspheres) in tuning the response. Additionally, their potential applications in nonlinear photonics, nonlinear optoelectronics, and biophotonics are systematically and thoroughly summed up and categorized. Lastly, insights into the current technical challenges and future research opportunities of nonlinear photonics based on low-dimensional metal-halide perovskites are provided.
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Affiliation(s)
- Weiqiang Chen
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
- Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Feng Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, P. R. China
| | - Cong Wang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, P. R. China
| | - Mingshuang Jia
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
- Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Xinghang Zhao
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
- Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Zhaoran Liu
- MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
- Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Yanqi Ge
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, P. R. China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, P. R. China
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18
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Lu K, Li X, Sun Q, Pang X, Chen J, Minari T, Liu X, Song Y. Solution-processed electronics for artificial synapses. MATERIALS HORIZONS 2021; 8:447-470. [PMID: 34821264 DOI: 10.1039/d0mh01520b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Artificial synaptic devices and systems have become hot topics due to parallel computing, high plasticity, integration of storage, and processing to meet the challenges of the traditional Von Neumann computers. Currently, two-terminal memristors and three-terminal transistors have been mainly developed for high-density storage with high switching speed and high reliability because of the adjustable resistivity, controllable ion migration, and abundant choices of functional materials and fabrication processes. To achieve the low-cost, large-scale, and easy-process fabrication, solution-processed techniques have been extensively employed to develop synaptic electronics towards flexible and highly integrated three-dimensional (3D) neural networks. Herein, we have summarized and discussed solution-processed techniques in the fabrication of two-terminal memristors and three-terminal transistors for the application of artificial synaptic electronics mainly reported in the recent five years from the view of fabrication processes, functional materials, electronic operating mechanisms, and system applications. Furthermore, the challenges and prospects were discussed in depth to promote solution-processed techniques in the future development of artificial synapse with high performance and high integration.
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Affiliation(s)
- Kuakua Lu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, P. R. China.
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19
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Park Y, Lee JS. Bifunctional Silver-Doped ZnO for Reliable and Stable Organic-Inorganic Hybrid Perovskite Memory. ACS APPLIED MATERIALS & INTERFACES 2021; 13:1021-1026. [PMID: 33369379 DOI: 10.1021/acsami.0c18038] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Halide perovskites (HPs) have possible uses as an active layer for emerging memory devices due to their low operation voltage and high on/off ratio. However, HP-based memory devices, which are operated by the formation of a conductive filament, still suffer from reliability issues such as limited endurance and stability. To solve the problems, it is essential to control filament formation in the active layer. Here, we present nanoscale HP-based memory devices that have a Ag-doped ZnO (AZO) layer on HP. The AZO layer is used as a Ag ion reservoir for filament formation in HP, and this reservoir enables control of filament formation. By adjusting the Ag concentration in the AZO layer, the controlled filament composed of Ag can be formed; as a result, the memory device has excellent endurance (3 × 104 cycles) compared to the device that uses a Ag electrode instead of an AZO layer (4 × 102 cycles). Also, an AZO layer can passivate HP, so the device operates stably in ambient air for 15 days with a high on/off ratio (106). These results demonstrate that the introduction of the AZO layer can improve the reliability of HP-based memory devices for high-density applications.
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Affiliation(s)
- Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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20
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Cao Q, Lü W, Wang XR, Guan X, Wang L, Yan S, Wu T, Wang X. Nonvolatile Multistates Memories for High-Density Data Storage. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42449-42471. [PMID: 32812741 DOI: 10.1021/acsami.0c10184] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.
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Affiliation(s)
- Qiang Cao
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - X Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Lan Wang
- School of Science, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT University, Melbourne, Victoria 3001, Australia
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
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21
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Oberoi D, Dagar P, Shankar U, Sahu S, Bandyopadhyay A. Stabilization of Pristine Low Resistive State in a Ruthenium(II)‐Polymer of a Hexadentate Schiff Base Ligand: Synthesis, Characterization, and Application as Non‐Volatile Memory Device. Eur J Inorg Chem 2020. [DOI: 10.1002/ejic.202000303] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Deepa Oberoi
- Department of Chemistry NIT Tiruchirappalli 620015 Tiruchirappalli Tamil Nadu India
- Department of Polymer & Process Engineering IIT Roorkee, IIT Roorkee Saharanpur Campus 247001 Saharanpur India
| | - Parveen Dagar
- Department of Physics IIT Jodhpur 342011 Jodhpur India
| | - Uday Shankar
- Department of Polymer & Process Engineering IIT Roorkee, IIT Roorkee Saharanpur Campus 247001 Saharanpur India
| | - Satyajit Sahu
- Department of Physics IIT Jodhpur 342011 Jodhpur India
| | - Anasuya Bandyopadhyay
- Department of Polymer & Process Engineering IIT Roorkee, IIT Roorkee Saharanpur Campus 247001 Saharanpur India
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22
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Lee J, Ryu JH, Kim B, Hussain F, Mahata C, Sim E, Ismail M, Abbas Y, Abbas H, Lee DK, Kim MH, Kim Y, Choi C, Park BG, Kim S. Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33908-33916. [PMID: 32608233 DOI: 10.1021/acsami.0c07867] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this study, the resistive switching and synaptic properties of a complementary metal-oxide semiconductor-compatible Ti/a-BN/Si device are investigated for neuromorphic systems. A gradual change in resistance is observed in a positive SET operation in which Ti diffusion is involved in the conducting path. This operation is extremely suitable for synaptic devices in hardware-based neuromorphic systems. The isosurface charge density plots and experimental results confirm that boron vacancies can help generate a conducting path, whereas the conducting path generated by a Ti cation from interdiffusion forms is limited. A negative SET operation causes a considerable decrease in the formation energy of only boron vacancies, thereby increasing the conductivity in the low-resistance state, which may be related to RESET failure and poor endurance. The pulse transient characteristics, potentiation and depression characteristics, and good retention property of eight multilevel cells also indicate that the positive SET operation is more suitable for a synaptic device owing to the gradual modulation of conductance. Moreover, pattern recognition accuracy is examined by considering the conductance values of the measured data in the Ti/a-BN/Si device as the synaptic part of a neural network. The linear and symmetric synaptic weight update in a positive SET operation with an incremental voltage pulse scheme ensures higher pattern recognition accuracy.
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Affiliation(s)
- Jinju Lee
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Ji-Ho Ryu
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Boram Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea
| | - Fayyaz Hussain
- Materials Research Simulation Laboratory (MSRL) Department of physics, Bahauddin Zakariya University, Multan 60800, Pakistan
| | - Chandreswar Mahata
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Eunjin Sim
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Muhammad Ismail
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Yawar Abbas
- Department of Physics, Khalifa University, Abu Dhabi 127788, United Arab Emirates
| | - Haider Abbas
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea
| | - Dong Keun Lee
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Min-Hwi Kim
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Yoon Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea
| | - Byung-Gook Park
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
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23
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Yang H, Wang Z, Guo X, Su H, Sun K, Yang D, Xiao W, Wang Q, He D. Controlled Growth of Fine Multifilaments in Polymer-Based Memristive Devices Via the Conduction Control. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34370-34377. [PMID: 32627526 DOI: 10.1021/acsami.0c07533] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Solid polymer electrolyte (SPE) is one of the choices for many ionic devices, including organic transistors, ion batteries, memristors, and more. However, uncontrollable conductive filament formation seriously affects the performance of the device. In this paper, the PEDOT:PSS was doped to improve the electronic and ionic conductivity of amorphous polymer electrolyte poly(vinylpyrrolidone) (PVP), realizing the transition of the filaments growth from cathode to anode in atomic switch memristors. Based on the difference in ion and electron mobility and scanning electron microscope observation, the in situ reductions of metal ions inside the dielectric layer can effectively prevent the formation of uncontrollable filaments. The formation of uniformly distributed metal particles in the dielectric layer is similar to co-sputter doping technology, which enables the device to exhibit excellent performance, such as smaller set/reset bias distribution, endurance, and retention. Obviously, this innovative way improves the conductive mechanism of ionic devices.
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Affiliation(s)
- Huiyong Yang
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Zheng Wang
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Xiangyu Guo
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Hao Su
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Kai Sun
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Dongliang Yang
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Wei Xiao
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Qi Wang
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Deyan He
- School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
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24
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Lv F, Ling K, Zhong T, Liu F, Liang X, Zhu C, Liu J, Kong W. Multilevel Resistive Switching Memory Based on a CH 3NH 3PbI 3-xCl x Film with Potassium Chloride Additives. NANOSCALE RESEARCH LETTERS 2020; 15:126. [PMID: 32504244 PMCID: PMC7275113 DOI: 10.1186/s11671-020-03356-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 05/18/2020] [Indexed: 06/11/2023]
Abstract
High-quality CH3NH3PbI 3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.
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Affiliation(s)
- Fengzhen Lv
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.
| | - Kang Ling
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Tingting Zhong
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Fuchi Liu
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.
| | - Xiaoguang Liang
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Changming Zhu
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Jun Liu
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Wenjie Kong
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
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25
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Lee S, Kim H, Kim DH, Kim WB, Lee JM, Choi J, Shin H, Han GS, Jang HW, Jung HS. Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:17039-17045. [PMID: 32174107 DOI: 10.1021/acsami.9b22918] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Hybrid organic-inorganic halide perovskites (HPs) have garnered significant attention for use in resistive switching (RS) memory devices due to their low cost, low operation voltage, high on/off ratio, and excellent mechanical properties. However, the HP-based RS memory devices continue to face several challenges owing to the short endurance and stability of the HP film. Herein, two-dimensional/three-dimensional (2D/3D) perovskite heterojunction films were prepared via a low-temperature all-solution process and their RS behavior was investigated for the first time. The 2D/3D perovskite RS devices exhibited excellent performance with an endurance of 2700 cycles, a high on/off ratio of 106, and an operation speed of 640 μs. The calculated thermally assisted ion hopping activation energy and the results of the time-of-flight secondary ion mass spectroscopy demonstrated that the 2D perovskite layer could efficiently prevent the Ag ion migration into the 3D perovskite film. Moreover, we found that owing to its high thermal conductivity, the 2D perovskite can control the rupture of the Ag conductive filament. Thus, the 2D perovskite layer enhances endurance by controlling both Ag migration and filament rupture. Hence, this study provides an alternate strategy for improving endurance of HP-based RS memory devices.
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Affiliation(s)
- SangMyeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyojung Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Dong Hoe Kim
- Department of Nanotechnology & Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae Myeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jaeho Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyunjung Shin
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Gill Sang Han
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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26
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de Carvalho RC, Betts AJ, Cassidy JF. Formation of p-n junctions in nanoparticle cerium oxide electrolytic cells displaying memristive switching behaviour. Phys Chem Chem Phys 2020; 22:4216-4224. [PMID: 32043100 DOI: 10.1039/c9cp06016b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
A macro-scale metal-semiconductor-metal device comprising CeO2 nanoparticles cast from a suspension of cerium dioxide formed by a novel synthetic method was fabricated. Thin CeO2 films of 40 nm thickness placed between panels of aluminium and/or copper displayed memristive-like resistive switching behaviour upon the application of potential sweeps ranging between -0.6 V and 0.6 V. A mechanism is proposed based on the notion that an electrolytic cell operates under such conditions with the initial formation of p and n-type regions within the central semiconductive thin film. Evidence is presented for the existence of numerous point defects in these nanosized CeO2 films, which are also likely to play a role in the device's operation acting as internal dopants. Steady currents were observed upon the imposition of constant potentials, most notably at higher potential values (both anodic and cathodic). It is suggested that electrons and holes act as charge carriers in these devices rather than ionic species as proposed in some other mechanisms.
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Affiliation(s)
- Rafaela C de Carvalho
- Applied Electrochemistry Group, FOCAS, Technological University Dublin, Kevin St, Dublin 8, Ireland.
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27
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Study on synthesis, characterization, and nonvolatile memory behavior of ferrocene-containing metallopolymers. J Organomet Chem 2019. [DOI: 10.1016/j.jorganchem.2019.04.025] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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