Monoelemental two-dimensional boron nanomaterials beyond theoretical simulations: From experimental preparation, functionalized modification to practical applications

During the past decade, there is an explosive growth of theoretical and computational studies on 2D boron-based nanomaterials. In terms of extensive predictions from theoretical simulations, borophene, boron nanosheets and 2D boron derivatives show excellent structural, electronic, photonic and nonlinear optical characteristics, and potential applications in a wide range of fields. In recent years, previous studies have reported the successful experimental preparations, superior properties, multi-functionalized modifications of various 2D boron and its derivatives, which show many practical applications in significant fields. To further promote the ever-increasing experimental studies, this present review systematically summarizes recent progress on experimental preparation methods, functionalized modification strategies and practical applications of 2D boron-based nanomaterials and multifunctional derivatives. Firstly, this review summarizes the experimental preparation methods, including molecular beam epitaxy, chemical vapor deposition, liquid-phase exfoliation, chemical reaction, and other auxiliary methods. Then, various strategies for functionalized modification are introduced overall, focusing on borophene derivatives, boron-based nanosheets, atom-introduced, chemically-functionalized borophene and boron nanosheets, borophene or boron nanosheet-based heterostructures, and other functionalized 2D boron nanomaterials. Subsequently, various potential applications are discussed in detail, involving energy storage, catalysis conversion, photonics, optoelectronics, sensors, bio-imaging, biomedicine therapy, and adsorption. We comment the state-of-the-art related studies concisely, and also discuss the current status, probable challenges and perspectives rationally. This review is timely, comprehensive, in-depth and highly attractive for scientists from multiple disciplines and scientific fields, and can facilitate further development of advanced functional low-dimensional nanomaterials and multi-functionalized systems toward high-performance practical applications in significant fields.

Exploring the emerging applications of the advanced 2-dimensional material borophene with its unique properties

Borophene, a crystalline allotrope of monolayer boron, with a combination of triangular lattice and hexagonal holes, has stimulated wide interest in 2-dimensional materials and their applications. Although their properties are theoretically confirmed, they are yet to be explored and confirmed experimentally. In this review article, we present advancements in research on borophene, its synthesis, and unique properties, including its advantages for various applications with theoretical predictions. The uniqueness of borophene over graphene and other 2-dimensional (2D) materials is also highlighted along with their various structural stabilities. The strategy for its theoretical simulations, leading to the experimental synthesis, could also be helpful for the exploration of many newer 2D materials.

Tunable wavevector filtering in borophane based normal metal-barrier-normal metal junctions

We study the transport properties of Dirac electrons across a two-dimensional normal metal-barrier-normal metal interface in monolayer borophane. We analyse the transmission probability with variation of the width of the barrier region, the incidence energy and transverse momentum. We demonstrate that a gap exists in the transmission probability spectrum and the position of the width of the transmission gap can be tuned by the barrier strength and transverse momentum respectively. We point out the variation of the ballistic tunneling conductance as a function of the width of the barrier region and incident energy. We find that the oscillatory or decaying nature of the conductance with variation in barrier width depends upon the number of propagating and evanescent modes which are controlled by the incident energy and barrier strength. We show that the conductance as a function of incident energy drops to a minimum value when the incident energy becomes identical to the barrier height and identify that this effect is caused by the presence of evanescent modes inside the barrier. Based on these findings we propose a perfectly tunable wavevector filter for borophane. We expect our findings possess useful applications in borophane based nano-electronic devices.

Ab-Initio Study of the Electronic and Magnetic Properties of Boron- and Nitrogen-Doped Penta-Graphene

First-principles calculations were performed to investigate the effects of boron/nitrogen dopant on the geometry, electronic structure and magnetic properties of the penta-graphene system. It was found that the electronic band gap of penta-graphene could be tuned and varied between 1.88 and 2.12 eV depending on the type and location of the substitution. Moreover, the introduction of dopant could cause spin polarization and lead to the emergence of local magnetic moments. The main origin of the magnetic moment was analyzed and discussed by the examination of the spin-polarized charge density. Furthermore, the direction of charge transfer between the dopant and host atoms could be attributed to the competition between the charge polarization and the atomic electronegativity. Two charge-transfer mechanisms worked together to determine which atoms obtained electrons. These results provide the possibility of modifying penta-graphene by doping, making it suitable for future applications in the field of optoelectronic and magnetic devices.

Direction and strain controlled anisotropic transport behaviors of 2D GeSe-phosphorene vdW heterojunctions

Vertical van der Waals (vdW) heterostructures made up of two or more 2D monolayer materials provide new opportunities for 2D devices. Herein, we study the electronic transport properties of vertical integration of 2D GeSe-phosphorene(GeSe-BP) heterostructure, using the nonequilibrium Green's function formalism combined with the density-functional theory. The results reveal that the directional dependency and strain tunable transport anisotropic behavior appears in GeSe/BP-stacking vdW heterostructures. The current-voltage (I-V) characteristics indicate that the electric current propagates more easily through the perpendicular buckled direction (Y) than the linear atomic chain direction (X) in the low bias regime regardless of the GeSe-BP stacking, which is supported by the underlying electronic structures along Γ-Y and Γ-X lines. The anisotropic transmission spectra indicate an over 10⁵ on/off ratio between the I _Y and I _X in GeSe-BP systems. This anisotropic transmission behavior of 2D GeSe-BP heterojunction is regardless of the considered layer distances. The similar situation can also be found in the I-V characteristics of GeSe-BP nano-device after applying a strain, and a charming behavior that the transport gap can be minished obviously when applied a compressed strain on the perpendicular y-direction or the stretched strain on the x-direction. Moreover, an intriguing semiconductor-metal transition induces by applying the in-plain strain along the y-direction. These results imply that the GeSe-BP nanojunctions may be a promising application in futuristic nano-switching materials.

Multifunctional 2D CuSe monolayer nanodevice

In a very recent experimental work (Gao et al 2018 Adv. Mater. 30 1707055), a graphene-like CuSe monolayer (ML) was realized. Motivated by this success, we performed first-principles calculations to investigate its electronic transport and photoelectronic properties. We find that the CuSe ML shows a strong electrical anisotropy, and its current-voltage (I-V) curves along the zigzag and armchair directions are noticeably different. The CuSe ML also displays a useful negative differential resistance (NDR) effect along the both directions when the bias is beyond 1.0 V. Moreover, it has a large photon absorption to orange light. Our study suggests that CuSe ML is a multifunctional material and has various potential applications in electrical-anisotropy-based, NDR-based, and even optical nanodevices.

Electronic structure, carrier mobility and strain modulation of CH (SiH, GeH) nanoribbons

Using first-principles calculations coupled with deformation potential (DP) theory, we have systematically studied the band structure, carrier mobility and strain modulation of monolayer graphane (CH), silicane (SiH) and germanane (GeH) nanoribbons. It is found that all the CH (SiH, GeH) nanoribbons are semiconductor with a wide range of band gap. The carrier mobility results show that the armchair germanane nanoribbon (AGeNR) has the characteristic of p -type semiconductor in electrical conduction because its hole mobility is larger than the electron mobility. While the graphane nanoribbon (CNR) behaves as n-type semiconductor in electrical conduction. Compared to AGeNR and CNR, the mobilities of other nanoribbons are much smaller. Moreover, the band structure and carrier mobility of AGeNR and CNR can be effectively tuned by strain. There are different state competing for the valence band maximum (VBM). When the strain exceeds certain value, the VBM is transited to a new band-edge state accompanied with a large increase of hole mobility. The new band-edge state has smaller DP constant because its bond character makes it less sensitive to strain, and thus resulting in higher hole mobility.

Electron Transport in Nanoporous Graphene: Probing the Talbot Effect

Electrons in graphene can show diffraction and interference phenomena fully analogous to light thanks to their Dirac-like energy dispersion. However, it is not clear how this optical analogy persists in nanostructured graphene, for example, with pores. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly (Moreno et al. Science 2018, 360, 199). We predict that electrons propagating in NPG exhibit the interference Talbot effect, analogous to photons in coupled waveguides. Our results are obtained by parameter-free atomistic calculations of real-sized NPG samples based on seamlessly integrated density functional theory and tight-binding regions. We link the origins of this interference phenomenon to the band structure of the NPG. Most importantly, we demonstrate how the Talbot effect may be detected experimentally using dual-probe scanning tunneling microscopy. Talbot interference of electron waves in NPG or other related materials may open up new opportunities for future quantum electronics, computing, or sensing.

Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures

Zigzag lateral heterostructures of 2D group-IV monochalcogenides have an interesting negative differential resistive effect, independent of the ribbon width.

Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport.