Control of TiN oxidation upon atomic layer deposition of oxides

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

Hf_0.5Zr_0.5O₂(HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been fully scaled into industrial applications is due to its deleterious wake-up and fatigue behavior which leads to an inconsistent remanent polarization during cycling. In this study, we explore an interfacial engineering strategy in which we insert 1 nm Al₂O₃interlayers at either the top or bottom HZO/TiN interface of sequentially deposited metal-ferroelectric-metal capacitors. By inserting an interfacial layer while limiting exposure to the ambient environment, we successfully introduce a protective passivating layer of Al₂O₃that provides excess oxygen to mitigate vacancy formation at the interface. We report that TiN/HZO/TiN capacitors with a 1 nm Al₂O₃at the top interface demonstrate a higher remanent polarization (2P_r∼ 42μC cm^-2) and endurance limit beyond 10⁸cycles at a cycling field amplitude of 3.5 MV cm^-1. We use time-of-flight secondary ion mass spectrometry, energy dispersive spectroscopy, and grazing incidence x-ray diffraction to elucidate the origin of enhanced endurance and leakage properties in capacitors with an inserted 1 nm Al₂O₃layer. We demonstrate that the use of Al₂O₃as a passivating dielectric, coupled with sequential ALD fabrication, is an effective means of interfacial engineering and enhances the performance of ferroelectric HZO devices.

Structure, Oxygen Content and Electric Properties of Titanium Nitride Electrodes in TiNx/La:HfO2/TiNx Stacks Grown by PEALD on SiO2/Si

This work reports experimental results of the quantitative determination of oxygen and band gap measurement in the TiN_x electrodes in planar TiN_x top/La:HfO₂/TiN_x bottom MIM stacks obtained by plasma enhanced atomic layer deposition on SiO₂. Methodological aspects of extracting structural and chemical information from (scanning) transmission electron microscopy imaging (bright field and high angular annular dark field), energy dispersive X-ray spectrometry and electron energy loss spectroscopy are thoroughly considered. The study shows that the oxygen concentration is higher in the TiN_xO_y bottom electrode (about 14.2 ± 0.1 at. %) compared to the TiN_xO_y top electrode (about 11.4 ± 0.5 at. %). The following average stoichiometric formulas are TiN₀.₅₂O₀.₂₀ top and TiN₀.₅₄O₀.₂₆ bottom for top and bottom electrodes, respectively. The amount of oxygen incorporated into TiN_x during PEALD because of oxygen impurities in the plasma is minor compared to that because of diffusion from SiO₂ and HfO₂. This asymmetry, together with results on a sample grown on a Si substrate, shows that incorporating oxygen impurity from the plasma itself is a minor part compared to diffusion from the SiO₂ substrate and HfO₂ dielectric during the PEALD growth. We observe the presence of TiO₂ at the interface between the Hf oxide layer and the Ti nitride electrodes as well as at the SiO₂ interface. EELS analysis led to a band gap ranging from 2.2 to 2.5 eV for the bottom TiN_xO_y and 1.7-2.2 eV for the top TiN_xO_y, which is in fair agreement with results obtained on the top TiN_x electrode (1.6 ± 01 eV) using optical absorption spectra. Measurement of sheet resistance, resistivity and temperature coefficient of resistance by a four-point probe on the top TiN_xO_y electrode from 20 to 100 °C corresponds to the typical values for semiconductors.

Depth-resolved compositional analysis of W/B4C multilayers using resonant soft X-ray reflectivity

W/B₄C multilayers (MLs) consisting of ten layer pairs with varying boron carbide layer thicknesses have been investigated. The ML structures were characterized using grazing-incidence hard X-ray reflectivity (GIXR), resonant soft X-ray reflectivity (RSXR), hard X-ray photoelectron spectroscopy (HAXPES) and X-ray absorption near-edge spectroscopy (XANES). Depth-resolved spectroscopic information on the boron carbide layer in W/B₄C MLs was extracted with sub-nanometre resolution using reflectivity performed in the vicinity of the B K-edge. Interestingly, these results show that the composition of boron carbide films is strongly dependent on layer thicknesses. HAXPES measurements suggest that most of the boron is in the chemical state of B₄C in the multilayer structures. XANES measurements suggest an increase in boron content and C-B-C bonding with increase in boron carbide layer thickness.