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Gao H, Chen R, Zhang K, Abudurusuli A, Lai K, Li J. Synthesis, characterization and theoretical investigation of a new chalcohalide, Ba 4GaS 4F 3. Dalton Trans 2021; 50:6315-6320. [PMID: 33881444 DOI: 10.1039/d1dt00800e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A new fluorine-containing chalcohalide, Ba4GaS4F3, has been synthesized by conventional high-temperature solid-state reaction. The compound crystallizes in the centrosymmetric space group I41/a with a = b = 16.628 (5) Å, c = 17.139 (10) Å, Z = 16. Experimental and theoretical results confirm that Ba4GaS4F3 is a direct band gap compound with an experimental band gap of about 3.13 eV, and the band gap is mainly determined by the Ba-5p, F-2p and S-3p orbitals. What's more, different from the many newly discovered chalcohalides in the Ba3AM4Q (A = Ga, In; M = S, Se; Q = Cl, Br, I) family, Ba4GaS4F3 is the first reported compound in the Ba4AM4D3 (A = Ga, In; M = chalcogen; D = halogen) family. The results enrich the structural diversity of metal chalcohalides.
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Affiliation(s)
- Hongbo Gao
- Department of Physics, Changji University, Changji, Xinjiang 831100, China.
| | - Ruijiao Chen
- College of Chemistry and Chemical Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
| | - Kewang Zhang
- College of Physical Science and Technology, Xinjiang University, Urumqi, Xinjiang 830046, China
| | - Ailijiang Abudurusuli
- Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi, Xinjiang 830011, China and University of Chinese Academy of Science, Beijing 100049, China.
| | - Kangrong Lai
- Department of Physics, Changji University, Changji, Xinjiang 831100, China.
| | - Junjie Li
- Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi, Xinjiang 830011, China
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Wang P, Abudoureheman M, Chen Z. Experimental and theoretical studies of the ternary thiophosphate PbPS 3 featuring ethane-like [P 2S 6] 4- units. Dalton Trans 2020; 49:17221-17229. [PMID: 33206070 DOI: 10.1039/d0dt03420g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
The ternary thiophosphate PbPS3 was synthesized by a high-temperature solid-state reaction using PbS, P and S. Single-crystal X-ray diffraction analysis reveals that the compound crystallizes in the P21/c space group. It features a three-dimensional structure, which consists of [PbS8] hendecahedra and isolated ethane-like [P2S6]4- units. PbPS3 can be easily obtained by different methods and shows high air stability, which is beneficial to its chemical synthesis and large-sized crystal growth. The crystal structure, optical properties and electronic structure of PbPS3 have been researched by experimental methods and first-principles calculations. The results show that PbPS3 has a moderate bandgap (Eg. exp. = 2.60 eV) and birefringence (Δncal. = 0.094@1064 nm), as well as a wide transparent range. Furthermore, to better understand the origin of the birefringence, structure comparisons and theoretical calculations were carried out. With a relatively high physicochemical stability and easy synthesis, PbPS3 can be expected to be a prospective birefringent material.
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Affiliation(s)
- Peng Wang
- School of Chemical Engineering and Technology, Key Laboratory of Coal Clean Conversion & Chemical Engineering Process of Xinjiang Uyghur Autonomous Region, Xinjiang University, 666 Shengli Road, Urumqi 830046, China.
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Abudurusuli A, Li J, Tong T, Yang Z, Pan S. LiBa4Ga5Q12 (Q = S, Se): Noncentrosymmetric Metal Chalcogenides with a Cesium Chloride Topological Structure Displaying a Remarkable Laser Damage Threshold. Inorg Chem 2020; 59:5674-5682. [DOI: 10.1021/acs.inorgchem.0c00431] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Ailijiang Abudurusuli
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
| | - Junjie Li
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Tinghao Tong
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Zhihua Yang
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Shilie Pan
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
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Abudurusuli A, Wu K, Li J, Yalikun A, Yang Z, Pan S. LiBa2MIIIQ4 (MIII = Al, Ga, In; Q = S, Se): A Series of Metal Chalcogenides with a Structural Transition. Inorg Chem 2019; 58:12859-12866. [DOI: 10.1021/acs.inorgchem.9b01810] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Ailijiang Abudurusuli
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
| | - Kui Wu
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Junjie Li
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Alimujiang Yalikun
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Zhihua Yang
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Shilie Pan
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
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