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Lim JG, Park SJ, Lee SM, Jeong Y, Kim J, Lee S, Park J, Hwang GW, Lee KS, Park S, Jang HJ, Ju BK, Park JK, Kim I. Hybrid CMOS-Memristor synapse circuits for implementing Ca ion-based plasticity model. Sci Rep 2024; 14:17915. [PMID: 39095461 PMCID: PMC11297293 DOI: 10.1038/s41598-024-68359-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Accepted: 07/23/2024] [Indexed: 08/04/2024] Open
Abstract
Neuromorphic computing research is being actively pursued to address the challenges posed by the need for energy-efficient processing of big data. One of the promising approaches to tackle the challenges is the hardware implementation of spiking neural networks (SNNs) with bio-plausible learning rules. Numerous research works have been done to implement the SNN hardware with different synaptic plasticity rules to emulate human brain operations. While a standard spike-timing-dependent-plasticity (STDP) rule is emulated in many SNN hardware, the various STDP rules found in the biological brain have rarely been implemented in hardware. This study proposes a CMOS-memristor hybrid synapse circuit for the hardware implementation of a Ca ion-based plasticity model to emulate the various STDP curves. The memristor was adopted as a memory device in the CMOS synapse circuit because memristors have been identified as promising candidates for analog non-volatile memory devices in terms of energy efficiency and scalability. The circuit design was divided into four sub-blocks based on biological behavior, exploiting the non-volatile and analog state properties of memristors. The circuit was designed to vary weights using an H-bridge circuit structure and PWM modulation. The various STDP curves have been emulated in one CMOS-memristor hybrid circuit, and furthermore a simple neural network operation was demonstrated for associative learning such as Pavlovian conditioning. The proposed circuit is expected to facilitate large-scale operations for neuromorphic computing through its scale-up.
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Affiliation(s)
- Jae Gwang Lim
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- School of Electrical Engineering, Korea University, Seoul, 02841, South Korea
| | - Sung-Jae Park
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Department of Micro/Nano Systems, Korea University, Seoul, 02841, South Korea
| | - Sang Min Lee
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Department of Micro/Nano Systems, Korea University, Seoul, 02841, South Korea
| | - Yeonjoo Jeong
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Jaewook Kim
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Suyoun Lee
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Jongkil Park
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Gyu Weon Hwang
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Kyeong-Seok Lee
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Seongsik Park
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Hyun Jae Jang
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Byeong-Kwon Ju
- School of Electrical Engineering, Korea University, Seoul, 02841, South Korea.
- Department of Micro/Nano Systems, Korea University, Seoul, 02841, South Korea.
| | - Jong Keuk Park
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
| | - Inho Kim
- Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
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Wang J, Zhuge X, Zhuge F. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2021; 22:326-344. [PMID: 34025215 PMCID: PMC8128179 DOI: 10.1080/14686996.2021.1911277] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
The state-of-the-art artificial intelligence technologies mainly rely on deep learning algorithms based on conventional computers with classical von Neumann computing architectures, where the memory and processing units are separated resulting in an enormous amount of energy and time consumed in the data transfer process. Inspired by the human brain acting like an ultra-highly efficient biological computer, neuromorphic computing is proposed as a technology for hardware implementation of artificial intelligence. Artificial synapses are the main component of a neuromorphic computing architecture. Memristors are considered to be a relatively ideal candidate for artificial synapse applications due to their high scalability and low power consumption. Oxides are most widely used in memristors due to the ease of fabrication and high compatibility with complementary metal-oxide-semiconductor processes. However, oxide memristors suffer from unsatisfactory stability and reliability. Oxide-based hybrid structures can effectively improve the device stability and reliability, therefore providing a promising prospect for the application of oxide memristors to neuromorphic computing. This work reviews the recent advances in the development of hybrid oxide memristive synapses. The discussion is organized according to the blending schemes as well as the working mechanisms of hybrid oxide memristors.
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Affiliation(s)
- Jingrui Wang
- School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
| | - Xia Zhuge
- School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai, China
- CONTACT Fei Zhuge Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, China
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Covi E, Donati E, Liang X, Kappel D, Heidari H, Payvand M, Wang W. Adaptive Extreme Edge Computing for Wearable Devices. Front Neurosci 2021; 15:611300. [PMID: 34045939 PMCID: PMC8144334 DOI: 10.3389/fnins.2021.611300] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Accepted: 03/24/2021] [Indexed: 11/13/2022] Open
Abstract
Wearable devices are a fast-growing technology with impact on personal healthcare for both society and economy. Due to the widespread of sensors in pervasive and distributed networks, power consumption, processing speed, and system adaptation are vital in future smart wearable devices. The visioning and forecasting of how to bring computation to the edge in smart sensors have already begun, with an aspiration to provide adaptive extreme edge computing. Here, we provide a holistic view of hardware and theoretical solutions toward smart wearable devices that can provide guidance to research in this pervasive computing era. We propose various solutions for biologically plausible models for continual learning in neuromorphic computing technologies for wearable sensors. To envision this concept, we provide a systematic outline in which prospective low power and low latency scenarios of wearable sensors in neuromorphic platforms are expected. We successively describe vital potential landscapes of neuromorphic processors exploiting complementary metal-oxide semiconductors (CMOS) and emerging memory technologies (e.g., memristive devices). Furthermore, we evaluate the requirements for edge computing within wearable devices in terms of footprint, power consumption, latency, and data size. We additionally investigate the challenges beyond neuromorphic computing hardware, algorithms and devices that could impede enhancement of adaptive edge computing in smart wearable devices.
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Affiliation(s)
| | - Elisa Donati
- Institute of Neuroinformatics, University of Zurich, Eidgenössische Technische Hochschule Zürich (ETHZ), Zurich, Switzerland
| | - Xiangpeng Liang
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, United Kingdom
| | - David Kappel
- Bernstein Center for Computational Neuroscience, III Physikalisches Institut–Biophysik, Georg-August Universität, Göttingen, Germany
| | - Hadi Heidari
- Microelectronics Lab, James Watt School of Engineering, University of Glasgow, Glasgow, United Kingdom
| | - Melika Payvand
- Institute of Neuroinformatics, University of Zurich, Eidgenössische Technische Hochschule Zürich (ETHZ), Zurich, Switzerland
| | - Wei Wang
- The Andrew and Erna Viterbi Department of Electrical Engineering, Technion–Israel Institute of Technology, Haifa, Israel
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Tiotto TF, Goossens AS, Borst JP, Banerjee T, Taatgen NA. Learning to Approximate Functions Using Nb-Doped SrTiO 3 Memristors. Front Neurosci 2021; 14:627276. [PMID: 33679290 PMCID: PMC7933504 DOI: 10.3389/fnins.2020.627276] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2020] [Accepted: 12/24/2020] [Indexed: 11/27/2022] Open
Abstract
Memristors have attracted interest as neuromorphic computation elements because they show promise in enabling efficient hardware implementations of artificial neurons and synapses. We performed measurements on interface-type memristors to validate their use in neuromorphic hardware. Specifically, we utilized Nb-doped SrTiO3 memristors as synapses in a simulated neural network by arranging them into differential synaptic pairs, with the weight of the connection given by the difference in normalized conductance values between the two paired memristors. This network learned to represent functions through a training process based on a novel supervised learning algorithm, during which discrete voltage pulses were applied to one of the two memristors in each pair. To simulate the fact that both the initial state of the physical memristive devices and the impact of each voltage pulse are unknown we injected noise into the simulation. Nevertheless, discrete updates based on local knowledge were shown to result in robust learning performance. Using this class of memristive devices as the synaptic weight element in a spiking neural network yields, to our knowledge, one of the first models of this kind, capable of learning to be a universal function approximator, and strongly suggests the suitability of these memristors for usage in future computing platforms.
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Affiliation(s)
- Thomas F. Tiotto
- Groningen Cognitive Systems and Materials Center, University of Groningen, Groningen, Netherlands
- Artificial Intelligence, Bernoulli Institute, University of Groningen, Groningen, Netherlands
| | - Anouk S. Goossens
- Groningen Cognitive Systems and Materials Center, University of Groningen, Groningen, Netherlands
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, Netherlands
| | - Jelmer P. Borst
- Groningen Cognitive Systems and Materials Center, University of Groningen, Groningen, Netherlands
- Artificial Intelligence, Bernoulli Institute, University of Groningen, Groningen, Netherlands
| | - Tamalika Banerjee
- Groningen Cognitive Systems and Materials Center, University of Groningen, Groningen, Netherlands
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, Netherlands
| | - Niels A. Taatgen
- Groningen Cognitive Systems and Materials Center, University of Groningen, Groningen, Netherlands
- Artificial Intelligence, Bernoulli Institute, University of Groningen, Groningen, Netherlands
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Abstract
Neuromorphic devices and systems have attracted attention as next-generation computing due to their high efficiency in processing complex data. So far, they have been demonstrated using both machine-learning software and complementary metal-oxide-semiconductor-based hardware. However, these approaches have drawbacks in power consumption and learning speed. An energy-efficient neuromorphic computing system requires hardware that can mimic the functions of a brain. Therefore, various materials have been introduced for the development of neuromorphic devices. Here, recent advances in neuromorphic devices are reviewed. First, the functions of biological synapses and neurons are discussed. Also, deep neural networks and spiking neural networks are described. Then, the operation mechanism and the neuromorphic functions of emerging devices are reviewed. Finally, the challenges and prospects for developing neuromorphic devices that use emerging materials are discussed.
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Affiliation(s)
- Min-Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou YN, Wu YA. From Memristive Materials to Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54243-54265. [PMID: 33232112 DOI: 10.1021/acsami.0c10796] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The information technologies have been increasing exponentially following Moore's law over the past decades. This has fundamentally changed the ways of work and life. However, further improving data process efficiency is facing great challenges because of physical and architectural limitations. More powerful computational methodologies are crucial to fulfill the technology gap in the post-Moore's law period. The memristor exhibits promising prospects in information storage, high-performance computing, and artificial intelligence. Since the memristor was theoretically predicted by L. O. Chua in 1971 and experimentally confirmed by HP Laboratories in 2008, it has attracted great attention from worldwide researchers. The intrinsic properties of memristors, such as simple structure, low power consumption, compatibility with the complementary metal oxide-semiconductor (CMOS) process, and dual functionalities of the data storage and computation, demonstrate great prospects in many applications. In this review, we cover the memristor-relevant computing technologies, from basic materials to in-memory computing and future prospects. First, the materials and mechanisms in the memristor are discussed. Then, we present the development of the memristor in the domains of the synapse simulating, in-memory logic computing, deep neural networks (DNNs) and spiking neural networks (SNNs). Finally, the existent technology challenges and outlook of the state-of-art applications are proposed.
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Affiliation(s)
- Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Bai Sun
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Shubham Ranjan
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Yixuan Jiao
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Chemical Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Lan Wei
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Y Norman Zhou
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Yimin A Wu
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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Wang W, Song W, Yao P, Li Y, Van Nostrand J, Qiu Q, Ielmini D, Yang JJ. Integration and Co-design of Memristive Devices and Algorithms for Artificial Intelligence. iScience 2020; 23:101809. [PMID: 33305176 PMCID: PMC7718163 DOI: 10.1016/j.isci.2020.101809] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022] Open
Abstract
Memristive devices share remarkable similarities to biological synapses, dendrites, and neurons at both the physical mechanism level and unit functionality level, making the memristive approach to neuromorphic computing a promising technology for future artificial intelligence. However, these similarities do not directly transfer to the success of efficient computation without device and algorithm co-designs and optimizations. Contemporary deep learning algorithms demand the memristive artificial synapses to ideally possess analog weighting and linear weight-update behavior, requiring substantial device-level and circuit-level optimization. Such co-design and optimization have been the main focus of memristive neuromorphic engineering, which often abandons the “non-ideal” behaviors of memristive devices, although many of them resemble what have been observed in biological components. Novel brain-inspired algorithms are being proposed to utilize such behaviors as unique features to further enhance the efficiency and intelligence of neuromorphic computing, which calls for collaborations among electrical engineers, computing scientists, and neuroscientists.
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Affiliation(s)
- Wei Wang
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano 20133, Italy
| | - Wenhao Song
- Electrical and Computer Engineering Department, University of Southern California, Los Angeles, CA, USA
| | - Peng Yao
- Electrical and Computer Engineering Department, University of Southern California, Los Angeles, CA, USA
| | - Yang Li
- The Andrew and Erna Viterbi Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
| | | | - Qinru Qiu
- Electrical Engineering and Computer Science Department, Syracuse University, NY, USA
| | - Daniele Ielmini
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano 20133, Italy
| | - J Joshua Yang
- Electrical and Computer Engineering Department, University of Southern California, Los Angeles, CA, USA
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9
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Song ZW, Xiang SY, Ren ZX, Wang SH, Wen AJ, Hao Y. Photonic spiking neural network based on excitable VCSELs-SA for sound azimuth detection. OPTICS EXPRESS 2020; 28:1561-1573. [PMID: 32121864 DOI: 10.1364/oe.381229] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Accepted: 12/30/2019] [Indexed: 06/10/2023]
Abstract
We propose a photonic spiking neural network (SNN) based on excitable vertical-cavity surface-emitting lasers with an embedded saturable absorber (VCSELs-SA) for emulating the sound azimuth detection function of the brain for the first time. Here, the spike encoding and response properties based on the excitability of VCSELs-SA are employed, and the difference between spike timings of two postsynaptic neurons serves as an indication of sound azimuth. Furthermore, the weight matrix contributing to the successful sound azimuth detection is carefully identified, and the effect of the time interval between two presynaptic spikes is considered. It is found that the weight range that can achieve sound azimuth detection decreases gradually with the increase of the time interval between the sound arriving at the left and right ears. Besides, the effective detection range of the time interval between two presynaptic spikes is also identified, which is similar to that of the biological auditory system, but with a much higher resolution which is at the nanosecond time scale. We further discuss the effect of device variations on the photonic sound azimuth detection. Hence, this photonic SNN is biologically plausible, which has comparable low energy consumption and higher resolution compared with the biological system. This work is valuable for brain-inspired information processing and a promising foundation for more complex spiking information processing implemented by photonic neuromorphic computing systems.
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Tang J, Yuan F, Shen X, Wang Z, Rao M, He Y, Sun Y, Li X, Zhang W, Li Y, Gao B, Qian H, Bi G, Song S, Yang JJ, Wu H. Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902761. [PMID: 31550405 DOI: 10.1002/adma.201902761] [Citation(s) in RCA: 186] [Impact Index Per Article: 37.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2019] [Revised: 08/16/2019] [Indexed: 05/08/2023]
Abstract
As the research on artificial intelligence booms, there is broad interest in brain-inspired computing using novel neuromorphic devices. The potential of various emerging materials and devices for neuromorphic computing has attracted extensive research efforts, leading to a large number of publications. Going forward, in order to better emulate the brain's functions, its relevant fundamentals, working mechanisms, and resultant behaviors need to be re-visited, better understood, and connected to electronics. A systematic overview of biological and artificial neural systems is given, along with their related critical mechanisms. Recent progress in neuromorphic devices is reviewed and, more importantly, the existing challenges are highlighted to hopefully shed light on future research directions.
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Affiliation(s)
- Jianshi Tang
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Fang Yuan
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
| | - Xinke Shen
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - Zhongrui Wang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Mingyi Rao
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Yuanyuan He
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - Yuhao Sun
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - Xinyi Li
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Wenbin Zhang
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
| | - Yijun Li
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
| | - Bin Gao
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - He Qian
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Guoqiang Bi
- School of Life Sciences, University of Science and Technology of China, Hefei, 230027, China
| | - Sen Song
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Huaqiang Wu
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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Oh S, Kim CH, Lee S, Kim JS, Lee JH. Unsupervised online learning of temporal information in spiking neural network using thin-film transistor-type NOR flash memory devices. NANOTECHNOLOGY 2019; 30:435206. [PMID: 31342921 DOI: 10.1088/1361-6528/ab34da] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Brain-inspired analog neuromorphic systems based on the synaptic arrays have attracted large attention due to low-power computing. Spike-timing-dependent plasticity (STDP) algorithm is considered as one of the appropriate neuro-inspired techniques to be applied for on-chip learning. The aim of this study is to investigate the methodology of unsupervised STDP based learning in temporal encoding systems. The system-level simulation was performed based on the measurement results of thin-film transistor-type asymmetric floating-gate NOR flash memory. With proposed learning methods, 91.53% of recognition accuracy is obtained in inferencing MNIST standard dataset with 200 output neurons. Moreover, temporal encoding rules showed that the number of input pulses and the computing power can be compressed without significant loss of recognition accuracy compared to the conventional rate encoding scheme. In addition, temporal computing in a multi-layer network is suitable for learning data sequences, suggesting the possibility of applying to real-world tasks such as classifying direction of moving objects.
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Affiliation(s)
- Seongbin Oh
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
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