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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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Hong Z, Jiang X, Zhang M, Zhang H, Liu X. High Power and Large-Energy Pulse Generation in an Erbium-Doped Fiber Laser by a Ferromagnetic Insulator-Cr2Si2Te6 Saturable Absorber. NANOMATERIALS 2022; 12:nano12030564. [PMID: 35159910 PMCID: PMC8838737 DOI: 10.3390/nano12030564] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 01/28/2022] [Accepted: 02/03/2022] [Indexed: 01/25/2023]
Abstract
Large-energy mode-locked fiber lasers are extensively studied due to their indispensable use in various fields and applications. Recently, ferromagnetic insulators have attracted tremendous research interest in ultra-fast photonics because of their unique ferromagnetic properties and typical layered structure. In our work, Cr2Si2Te6 nanosheets are prepared and utilized as a saturable absorber (SA) in a large-energy mode-locked erbium-doped fiber (EDF) laser. With a total cavity length of 240 m, a stable mode-locked operation characterized by maximum pulse energy as high as 244.76 nJ with a repetition rate of 847.64 kHz is achieved. When the cavity length is extended to 390 m, the output maximum pulse energy is successfully scaled up to 325.50 nJ. To our knowledge, this is the largest pulse energy and highest output power level to be achieved in mode-locked fiber lasers by two-dimensional (2D) material saturable absorbers (SAs) so far. This work not only makes a forward step to the investigation of the generation of large-energy pulses in mode-locked fiber lasers but also fully proves that the ferromagnetic insulator-Cr2Si2Te6 possesses an excellent nonlinear absorption property, antioxidant capacity in ambient conditions, as well as outstanding thermal stability, which enriches our insight into 2D materials.
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Yu Q, Guo K, Dai Y, Deng H, Wang T, Wu H, Xu Y, Shi X, Wu J, Zhang K, Zhou P. Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:503001. [PMID: 34544055 DOI: 10.1088/1361-648x/ac2862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2021] [Accepted: 09/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted extensive interests due to their wide range of electronic and optical properties. After continuous and extensive research, black phosphorus (BP), a novel member of 2D layered semiconductor material, benefit for the unique in-plane anisotropic structure, controllable direct bandgap characteristic, and high charge carrier mobility, has attracted tremendous attention and successfully applied in ultrafast pulse generation. This article, which focuses on near-infrared ultrafast laser demonstration of BP, present discussion of preparation methods for high quality BP nanosheet, various BP based ultrafast lasers in the spatial/temporal domain, and the future research needs.
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Affiliation(s)
- Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yongping Dai
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yijun Xu
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Xinyao Shi
- Institute of Quantum Sensing of Wuxi, Wuxi, People's Republic of China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Kai Zhang
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
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Xu Y, Hu H, Wu H, Xu C, Zhang H, Jin L, Zou Y, Ma X, Yin J. Enhancing Q-Switched Fiber Laser Performance Based on Reverse Saturable and Saturable Absorption Properties of CuCrO 2 Nanoparticle-Polyimide Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:21748-21755. [PMID: 33913316 DOI: 10.1021/acsami.1c02762] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate CuCrO2 (CCO) nanoparticle (NP)-polyimide (PI) composite film as a saturable absorber (SA) to regulate the output characteristics of passively Q-switched fiber laser at 1.55 μm. Based on the reverse saturable and saturable absorptions of the CCO NP-PI film, the passively Q-switched fiber laser expressed two stages with the increase of pump power for substantial performance enhancement. Reverse saturation absorption is observed to introduce appropriate cavity loss, which constructs effective pathways for promoting both the modulation depth and over threshold degree, as well as reducing the photon lifetime. In particular, our results realized the pulse duration and repetition rate compressing simultaneously for the first time. The second stage output laser exhibits a peak power of 1016 mW and a single pulse energy of 183 nJ, which are about 88 and 9 times higher than those of the first stage. Furthermore, the optical-optical conversion efficiency is up to 1270%. All of these can evidently demonstrate the importance of the appropriate cavity loss design for optimizing the Q-switched pulse laser output characteristics.
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Affiliation(s)
- Yingtian Xu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Hanfei Hu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Hongda Wu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Chongyang Xu
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - He Zhang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Liang Jin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Yonggang Zou
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
| | - Jingzhi Yin
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qian-Jin Street, Changchun 130012, People's Republic of China
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Guo LG, Shang X, Gao J, Zhang H, Gao Y. ZrSe 2 nanosheet as saturable absorber for soliton operations within an Er-doped passive mode-locked fiber laser. APPLIED OPTICS 2020; 59:7484-7489. [PMID: 32902445 DOI: 10.1364/ao.402162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Accepted: 07/29/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional materials have extensively promoted the development of ultrafast photonics in the past decade. In our work, the saturable absorption properties of ZrSe2 were presented. The saturation intensity, modulation depth, and nonlinear absorption coefficient of the ZrSe2 saturable absorber (SA) are about 13.14MW/cm2, 6.09%, and 1.85∗10-1cm/GW. In the experiment, based on the ZrSe2 SA, two types of solitons were recorded. A conventional soliton with a pulse width of 985 fs and a three-pulse bound state soliton have been obtained. Our experiment reveals that ZrSe2 can be employed for generating multiple ultrafast soliton generations and possess promising application in ultrafast photonics.
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Wang T, Jin X, Yang J, Wu J, Yu Q, Pan Z, Shi X, Xu Y, Wu H, Wang J, He T, Zhang K, Zhou P. Oxidation-Resistant Black Phosphorus Enable Highly Ambient-Stable Ultrafast Pulse Generation at a 2 μm Tm/Ho-Doped Fiber Laser. ACS APPLIED MATERIALS & INTERFACES 2019; 11:36854-36862. [PMID: 31535548 DOI: 10.1021/acsami.9b12415] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Black phosphorus (BP) ranks among the most promising saturable absorber materials for ultrafast pulse generations at 2 μm. However, the easy-to-degrade characteristic of BP seriously limits the long-term operation of ultrafast fiber lasers and hence becomes a bottleneck for its relevant practical applications. In this paper, a modified electrochemical delamination exfoliation process was explored to produce high-performance, large-size, and oxidation-resistant BP nanosheets, where BP nanosheets in high yield with evenly coated tetra-n-butyl-ammonium organics by precisely controlling the intercalation chemistry can be obtained. A mode-locked Tm/Ho co-doped fiber laser with high temporal stability and long-term operation capability was demonstrated based on the innovatively fabricated BP saturable absorber. The self-starting mode-locking operation featuring a high signal-to-noise ratio of 58 dB and long-term stability has been verified for at least 3 weeks, which indicates the successful passivation of the employed synthesis method. These results fully indicated that passivated BP is an efficient candidate in a 2 μm range ultrafast photonic field, which will promote the ultrafast optical application of BP and also other infrared photonic and photoelectronic devices.
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Affiliation(s)
- Tao Wang
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | - Xiaoxi Jin
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | | | - Jian Wu
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | | | - Zhenghui Pan
- Department of Materials Science and Engineering , National University of Singapore , Singapore 117574 , Singapore
| | - Xinyao Shi
- School of Nano Technology and Nano Bionics , University of Science and Technology of China , Hefei 230026 , China
| | | | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | - Jin Wang
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | - Tingchao He
- College of Physics and Energy , Shenzhen University , Shenzhen 518060 , China
| | | | - Pu Zhou
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
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Wang T, Wang J, Wu J, Ma P, Su R, Ma Y, Zhou P. Near-Infrared Optical Modulation for Ultrashort Pulse Generation Employing Indium Monosulfide (InS) Two-Dimensional Semiconductor Nanocrystals. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E865. [PMID: 31181606 PMCID: PMC6630692 DOI: 10.3390/nano9060865] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2019] [Revised: 05/30/2019] [Accepted: 06/03/2019] [Indexed: 11/25/2022]
Abstract
In recent years, metal chalcogenide nanomaterials have received much attention in the field of ultrafast lasers due to their unique band-gap characteristic and excellent optical properties. In this work, two-dimensional (2D) indium monosulfide (InS) nanosheets were synthesized through a modified liquid-phase exfoliation method. In addition, a film-type InS-polyvinyl alcohol (PVA) saturable absorber (SA) was prepared as an optical modulator to generate ultrashort pulses. The nonlinear properties of the InS-PVA SA were systematically investigated. The modulation depth and saturation intensity of the InS-SA were 5.7% and 6.79 MW/cm2, respectively. By employing this InS-PVA SA, a stable, passively mode-locked Yb-doped fiber laser was demonstrated. At the fundamental frequency, the laser operated at 1.02 MHz, with a pulse width of 486.7 ps, and the maximum output power was 1.91 mW. By adjusting the polarization states in the cavity, harmonic mode-locked phenomena were also observed. To our knowledge, this is the first time an ultrashort pulse output based on InS has been achieved. The experimental findings indicate that InS is a viable candidate in the field of ultrafast lasers due to its excellent saturable absorption characteristics, which thereby promotes the ultrafast optical applications of InX (X = S, Se, and Te) and expands the category of new SAs.
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Affiliation(s)
- Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Jin Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Pengfei Ma
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Rongtao Su
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Yanxing Ma
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
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