Hyperfine interaction in atomically thin transition metal dichalcogenides

Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor

Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, which can affect both thermal properties and optoelectronic properties of conventional semiconductors. However, how isotopic mass affects the optoelectronic properties in 2D semiconductors remains unclear because of measurement uncertainties resulting from sample heterogeneities. Here, we report an anomalous optical bandgap energy red shift of 13 (±7) milli-electron volts as mass of Mo isotopes is increased in laterally structured 100MoS2-92MoS2 monolayers grown by a two-step chemical vapor deposition that mitigates the effects of heterogeneities. This trend, which is opposite to that observed in conventional semiconductors, is explained by many-body perturbation and time-dependent density functional theories that reveal unusually large exciton binding energy renormalizations exceeding the ground-state renormalization energy due to strong coupling between confined excitons and phonons. The isotope effect on the optical bandgap reported here provides perspective on the important role of exciton-phonon coupling in the physical properties of two-dimensional materials.

Layered materials as a platform for quantum technologies

Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.

Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

Exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment were studied. The negligible (less than 0.2 μeV) value of the anisotropic exchange interaction in these QDs prevents the mixing of the excitonic basis states and makes the formation of spin-polarized bright excitons possible under quasi-resonant, circularly polarized excitation. The recombination and spin dynamics of excitons are controlled by the hyperfine interaction between the electron and nuclear spins. A QD blockade by dark excitons was observed in the magnetic field, that eliminates the impact of nuclear spin fluctuations. A kinetic model which accounts for the population dynamics of the bright and dark exciton states as well as for the spin dynamics was developed to quantitatively describe the experimental data.

Optical measurement of electron spins in quantum dots: quantum Zeno effects

We describe theoretically the effects of the quantum back action under the continuous optical measurement of electron spins in quantum dots. We consider the system excitation by elliptically polarized light close to the trion resonance, which allows for simultaneous spin orientation and measurement. We microscopically demonstrate that the nuclei-induced spin relaxation can be both suppressed and accelerated by the continuous spin measurement due to the quantum Zeno and anti-Zeno effects, respectively. Our theoretical predictions can be directly compared with the future experimental results and straightforwardly generalized for pump-probe experiments.

Coherent Spin Dynamics of Localized Electrons in Monolayer MoS2

Compared with itinerant electrons in monolayer transition-metal dichalcogenides, localized electrons exhibit coherent spin precession in transverse magnetic fields B and usually have longer spin relaxation times. Here, we uncover the intrinsic spin dephasing processes of localized electrons whose mechanism remains unclear. Electron spin coherence dynamics are studied by time-resolved Faraday rotation spectroscopy in monolayer MoS₂, where four subensembles of localized electrons are found with different g factor values and inhomogeneous broadening. The spin dephasing rates of all four subensembles include a linearly B-dependent part due to g-factor inhomogeneity and a B-independent part dominated by electron-nuclear hyperfine interaction and/or anisotropic exchange interaction. The hyperfine-induced spin dephasing time is ∼30-40 ns, and the anisotropic exchange-induced spin dephasing time is on the order of subnanoseconds. The findings give insight into the coherent spin dynamics of localized electrons in monolayers and the interaction between the electron spin and its environment.

Dynamic Polarization of Electron Spins Interacting with Nuclei in Semiconductor Nanostructures

We suggest a new spin orientation mechanism for localized electrons: dynamic electron spin polarization provided by nuclear spin fluctuations. The detrimental effect of nuclear spin fluctuations can be harnessed and employed to provide angular momentum for the electrons via the hyperfine interaction in a weak magnetic field. For this, the sample is illuminated by an unpolarized light, which directly polarizes neither the electrons nor the nuclei. We predict that, for the electrons bound in localized excitons, 100% spin polarization can be reached in longitudinal magnetic fields of a few millitesla. The proof of principle experiment is performed on momentum-indirect excitons in (In,Al)As/AlAs quantum dots, where in a magnetic field of 17 mT the electron spin polarization of 30% is measured.