Efficient hole transfer from monolayer WS2 to ultrathin amorphous black phosphorus

Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films

2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.

Transient Absorption Spectroscopy of Films: Impact of Refractive Index

Transient absorption spectroscopy is a powerful technique to study the photoinduced phenomena in a wide range of states from solutions to solid film samples. It was designed and developed based on photoinduced absorption changes or that photoexcitation triggers a chain of reactions with intermediate states or reaction steps with presumably different absorption spectra. However, according to general electromagnetic theory, any change in the absorption properties of a medium is accompanied by a change in the refractive properties. Although this photoinduced change in refractive index has a negligible effect on solution measurements, it may significantly affect the measured response of thin films. In this Perspective paper, we examine why and how the measured responses of films differ from their expected "pure" absorption responses. The effect of photoinduced refractive index change can be concluded and studied by comparing the transmitted and reflected probe light responses. Another discussed aspect is the effect of light interference on thin films. Finally, new opportunities of monitoring the photocarrier migration in films and studying nontransparent samples using the reflected probe light response are discussed. Most of the examples provided in this article focus on studies involving perovskite, TiO2, and graphene-based films, but the general discussion and conclusions can be applicable to a wide range of semiconductor and thin metallic films.

Electrochemical Detection of Alpha-Fetoprotein Based on Black Phosphorus Nanosheets Modification with Iron Ions

Black phosphorus nanosheets (BPNSs) were synthesized with liquid exfoliation combined with the ultrasonic method and loaded with Fe3+ by simply mixing. The morphology, structure and electrochemical properties of the synthesized Fe3+/BPNSs were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV), etc. The load of Fe3+ can improve the electrochemical performance of BPNSs and enhance the sensitivity of the detection. Additionally, Fe3+/BPNSs display good biocompatibility. In this study, immunosensors based on Fe3+/BPNSs were constructed to detect alpha-fetoprotein (AFP). The detection is due to the specific binding between the AFP antigen and antibody on the surface of the immunosensors, which can reduce the current response of Fe3+/BPNSs. The immunosensors have a good linear relationship in the range of 0.005 ng·mL-1 to 50 ng·mL-1, and the detection limit is 1.2 pg·mL-1. The results show that surface modification with metal ions is a simple and effective way to improve the electrochemical properties of BPNSs, which will broaden the prospects for the future application of BPNSs in the electrochemical field.

A Critical Review on Black Phosphorus-Based Photocatalytic CO2 Reduction Application

Energy shortages and greenhouse effects are two unavoidable problems that need to be solved. Photocatalytically converting CO₂ into a series of valuable chemicals is considered to be an effective means of solving the above dilemmas. Among these photocatalysts, the utilization of black phosphorus for CO₂ photocatalytic reduction deserves a lightspot not only for its excellent catalytic activity through different reaction routes, but also on account of the great preponderance of this relatively cheap catalyst. Herein, this review offers a summary of the recent advances in synthesis, structure, properties, and application for CO₂ photocatalytic reduction. In detail, the review starts from the basic principle of CO₂ photocatalytic reduction. In the following section, the synthesis, structure, and properties, as well as CO₂ photocatalytic reduction process of black phosphorus-based photocatalyst are discussed. In addition, some possible influencing factors and reaction mechanism are also summarized. Finally, a summary and the possible future perspectives of black phosphorus-based photocatalyst for CO₂ reduction are established.

A multifunctional 2D black phosphorene-based platform for improved photovoltaics

As one of the latest additions to the 2D nanomaterials family, black phosphorene (BP, monolayer or few-layer black phosphorus) has gained much attention in various forms of solar cells. This is due largely to its intriguing semiconducting properties such as tunable direct bandgap (from 0.3 eV in the bulk to 2.0 eV in the monolayer), extremely high ambipolar carrier mobility, broad visible to infrared light absorption, etc. These appealing optoelectronic attributes make BP a multifunctional nanomaterial for use in solar cells via tailoring carrier dynamics, band energy alignment, and light harvesting, thereby promoting the rapid development of third-generation solar cells. Notably, in sharp contrast to the copious work on revealing the fundamental properties of BP, investigation into the utility of BP is comparatively less, particularly in the area of photovoltaics. Herein, we first identify and summarize an array of unique characteristics of BP that underpin its application in photovoltaics, aiming at providing inspiration to develop new designs and device architectures of photovoltaics. Subsequently, state-of-the-art synthetic routes (i.e., top-down and bottom-up) to scalable BP production that facilitates its applications in optoelectronic materials and devices are outlined. Afterward, recent advances in a diverse set of BP-incorporated solar cells, where BP may impart electron and/or hole extraction and transport, function as a light absorber, provide dielectric screening for enhancing exciton dissociation, and modify the morphology of photoabsorbers, are discussed, including organic solar cells, dye-sensitized solar cells, heterojunction solar cells and perovskite solar cells. Finally, the challenges and opportunities in this rapidly evolving field are presented.

Transient absorption measurements of interlayer charge transfer in a WS2/GeS van der Waals heterostructure

We introduce germanium sulfide (GeS) as a new layered material for the fabrication of two-dimensional van der Waals materials and heterostructures. Heterostructures of WS₂/GeS were fabricated using mechanical exfoliation and dry transfer techniques. Significant photoluminescence quenching of WS₂ in the heterostructures indicates efficient charge transfer. Transient absorption measurements were performed to study the dynamics of charge transfer. The results show that the heterostructure forms a type-II band alignment with the conduction band minimum and valence band maximum located in the WS₂ and GeS layers, respectively. The ultrafast hole transfer from WS₂ to GeS is confirmed by the faster decay of the lower peak value of the differential reflection signal in the heterostructure sample, in comparison to the WS₂ monolayer. These results introduce GeS as a promising semiconductor material for developing new novel heterostructures.

A mixed-dimensional 1D Se-2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors

Mixed-dimension van der Waals (vdW) p-n heterojunction photodiodes have inspired worldwide efforts to combine the excellent properties of 2D materials and traditional semiconductors without consideration of lattice mismatch. However, owing to the scarcity of intrinsic p-type semiconductors and insufficient optical absorption of the few layer 2D materials, a high performance photovoltaic device based on a vdW heterojunction is still lacking. Here, a novel mixed-dimension vdW heterojunction consisting of 1D p-type Se nanotubes and a 2D flexible n-type InSe nanosheet is proposed by a facile method, and the device shows excellent photovoltaic characteristics. Due to the superior properties of the hybrid p-n junction, the mix-dimensional van der Waals heterojunction exhibited high on/off ratios (103) at a relatively weak light intensity of 3 mW cm-2. And a broadband self-powered photodetector ranging from the UV to visible region is achieved. The highest responsivity of the device could reach up to 110 mA W-1 without an external energy supply. This value is comparable to that of the pristine Se device at 5 V and InSe device at 0.1 V, respectively. Furthermore, the response speed is enhanced by one order of magnitude over the single Se or InSe device even at a bias voltage. This work paves a new way for the further development of high performance, low cost, and energy-efficient photodetectors by using mixed-dimensional vdW heterostructures.