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Wu P, Ma Z, Xia X, Song B, Zhong J, Yu Y, Huang Y. Precise Engineering of the Electrocatalytic Activity of FeN 4-Embedded Graphene on Oxygen Electrode Reactions by Attaching Electrides. J Phys Chem Lett 2024; 15:1121-1129. [PMID: 38263631 DOI: 10.1021/acs.jpclett.3c03358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Using first-principles calculations combined with a constant-potential implicit solvent model, we comprehensively studied the activity of oxygen electrode reactions catalyzed by electride-supported FeN4-embedded graphene (FeN4Cx). The physical quantities in FeN4Cx/electrides, i.e., work function of electrides, interlayer spacing, stability of heterostructures, charge transferred to Fe, d-band center of Fe, and adsorption free energy of O, are highly intercorrelated, resulting in activity being fully expressed by the nature of the electrides themselves, thereby achieving a precise modulation in activity by selecting different electrides. Strikingly, the FeN4PDCx/Ca2N and FeN4PDCx/Y2C systems maintain a high oxygen evolution reaction (OER) and oxygen reduction reaction (ORR) activity with the overpotential less than 0.46 and 0.62 V in a wide pH range. This work provides an effective strategy for the rational design of efficient bifunctional catalysts as well as a model system with a simple activity-descriptor, helping to realize significant advances in energy devices.
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Affiliation(s)
- Peng Wu
- College of Chemistry and Material Science, Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu 241000, China
| | - Zengying Ma
- College of Chemistry and Material Science, Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu 241000, China
| | - Xueqian Xia
- College of Chemistry and Material Science, Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu 241000, China
| | - Bowen Song
- College of Chemistry and Material Science, Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu 241000, China
| | - Junwen Zhong
- Anhui Key Laboratory of Molecule-Based Materials, Anhui Carbon Neutrality Engineering Center, Anhui Normal University, Wuhu 241000, China
| | - Yanghong Yu
- Key Laboratory of Electrochemical Clean Energy of Anhui Higher Education Institutes, Anhui Provincial Engineering Laboratory of New-Energy Vehicle Battery Energy-Storage Materials, Anhui Normal University, Wuhu 241000, China
| | - Yucheng Huang
- College of Chemistry and Material Science, Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Normal University, Wuhu 241000, China
- Anhui Key Laboratory of Molecule-Based Materials, Anhui Carbon Neutrality Engineering Center, Anhui Normal University, Wuhu 241000, China
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Is F, Mohanta MK, Sarkar AD. Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:253001. [PMID: 36958043 DOI: 10.1088/1361-648x/acc70f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/23/2023] [Indexed: 06/18/2023]
Abstract
The new paradigm in electronics consists in realizing the seamless integration of many properties latent in nanomaterials, such as mechanical flexibility, strong spin-orbit coupling (Rashba spin splitting-RSS), and piezoelectricity. Taking cues from the pointers given on 1D ZnO nanowires (ACS Nano2018121811-20), the concept can be extended to multifunctional two-dimensional (2D) materials, which can serve as an ideal platform in next-generation electronics such as self-powered flexible piezo-spintronic device. However, a microscopically clear understanding reachable from the state-of-the-art density functional theory-based approaches is a prerequisite to advancing this research domain. Atomic-scale insights gained from meticulously performed scientific computations can firmly anchor the growth of this important research field, and that is of undeniable relevance from scientific and technological outlooks. This article reviews the scientific advance in understanding 2D materials hosting all the essential properties, i.e. flexibility, piezoelectricity, and RSS. Important 2D semiconducting monolayers that deserve a special mention, include monolayers of buckled MgX (X = S, Se, Te), CdTe, ZnTe, Janus structures of transition metal trichalcogenides, Janus tellurene and 2D perovskites. van Der Waals multilayers are also built to design multifunctional materials via modulation of the stacking sequence and interlayer coupling between the constituent layers. External electric field, strain engineering and charge doping are perturbations mainly used to tune the spintronic properties. Finally, the contact properties of these monolayers are also crucial for their actual implementation in electronic devices. The nature of the contacts, Schottky/Ohmic, needs to be carefully examined first as it controls the device's performance. In this regard, the rare occurrence of Ohmic contact in graphene/MgS van der Waals hetero bilayer has been presented in this review article.
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Affiliation(s)
- Fathima Is
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
| | - Manish Kumar Mohanta
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
| | - Abir De Sarkar
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
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Jiang J, Xu Y, Zhang X. Tunable Schottky and ohmic contacts in the Ti 2NF 2/α-Te van der Waals heterostructure. Phys Chem Chem Phys 2022; 24:21388-21395. [PMID: 36047321 DOI: 10.1039/d2cp02054h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two dimensional α-Te holds great promise in optoelectronic devices because of its high mobility and excellent environmental stability. In this study, the electronic structures and interfacial contact characteristics of the Ti2NF2/α-Te van der Waals heterostructure are investigated by means of first-principles calculations. It is found that p-type Schottky contacts with a Schottky barrier (SB) of 0.21 eV are formed at the Ti2NF2/α-Te interface. By applying external electric fields or controlling the interlayer coupling between the Ti2NF2 and α-Te monolayers, the SB height can be effectively tuned, and all the n-type Schottky, p-type Schottky, n-type ohmic and p-type ohmic contacts can be achieved. Such an extremely high tunability is further found to be closely associated with the charge transfer at the interface, as well as the interface dipole and the potential step. Our results provide an avenue for the design of future α-Te-based electronic devices with high performance.
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Affiliation(s)
- Jingwen Jiang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yiguo Xu
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study. MATERIALS 2022; 15:ma15124084. [PMID: 35744141 PMCID: PMC9230885 DOI: 10.3390/ma15124084] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 05/30/2022] [Accepted: 06/06/2022] [Indexed: 02/05/2023]
Abstract
At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current–voltage (I–V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.
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Wang J, Zhang D, Zhou B. Achieving an Ohmic contact in graphene-based van der Waals heterostructures by intrinsic defects and the inner polarized electric field of Janus AlGaSSe. NEW J CHEM 2021. [DOI: 10.1039/d1nj03861c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The Schottky barrier height is mainly affected by the synergistic action of the inner polarization electric field of Janus AlGaSSe and the 2D/2D heterostructure.
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Affiliation(s)
- Jiaming Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Dongxue Zhang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
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Liu J, Ren JC, Shen T, Liu X, Butch CJ, Li S, Liu W. Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials. RESEARCH 2020; 2020:6727524. [PMID: 33623908 PMCID: PMC7877374 DOI: 10.34133/2020/6727524] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2020] [Accepted: 09/24/2020] [Indexed: 11/06/2022]
Abstract
Physical and electronic asymmetry plays a crucial role in rectifiers and other devices with a directionally variant current-voltage (I-V) ratio. Several strategies for practically creating asymmetry in nanoscale components have been demonstrated, but complex fabrication procedures, high cost, and incomplete mechanistic understanding have significantly limited large-scale applications of these components. In this work, we present density functional theory calculations which demonstrate asymmetric electronic properties in a metal-semiconductor-metal (MSM) interface composed of stacked van der Waals (vdW) heterostructures. Janus MoSSe has an intrinsic dipole due to its asymmetric structure and, consequently, can act as either an n-type or p-type diode depending on the face at the interior of the stacked structure (SeMoS-SMoS vs. SMoSe-SMoS). In each configuration, vdW forces dominate the interfacial interactions, and thus, Fermi level pinning is largely suppressed. Our transport calculations show that not only does the intrinsic dipole cause asymmetric I-V characteristics in the MSM structure but also that different transmission mechanisms are involved across the S-S (direct tunneling) and S-Se interface (thermionic excitation). This work illustrates a simple and practical method to introduce asymmetric Schottky barriers into an MSM structure and provides a conceptual framework which can be extended to other 2D Janus semiconductors.
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Affiliation(s)
- Jia Liu
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Ji-Chang Ren
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Tao Shen
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xinyi Liu
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Christopher J Butch
- Department of Biomedical Engineering, Nanjing University, Nanjing, China.,Blue Marble Space Institute of Science, Seattle, Washington, USA
| | - Shuang Li
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Wei Liu
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Guo H, Zhang Z, Huang B, Wang X, Niu H, Guo Y, Li B, Zheng R, Wu H. Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfide (MoS 2 and WS 2) van der Waals heterostructures. NANOSCALE 2020; 12:20025-20032. [PMID: 32996977 DOI: 10.1039/d0nr04725b] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Harvesting solar energy for artificial photosynthesis is an emerging field in alternative energy research. In this work, the photocatalytic properties of InX(X = S, Se)/transition metal disulfide (MoS2 and WS2) van der Waals heterostructures have been investigated. The calculation results indicate that these heterostructures exhibit improved photocatalytic performance over that of isolated InX or transition metal disulfide monolayers. The studied heterostructures all have type-II band alignment with holes and electrons located at the TMD and InX side, respectively. This facilitates the spatial separation of photogenerated carriers and improves the photocatalytic efficiency. The carrier mobility of the designed heterostructures can be boosted compared with the isolated monolayers, thus enhancing the carrier transport properties. Moreover, the strain-tuned heterostructures can prominently manipulate the light-harvesting capability especially from the visible light to infrared light range. Among the studied heterostructures, InSe/MoS2 with the suitable band edge positions, excellent transport properties and strain tolerance, and the lowest overpotential for oxygen evolution, stands out as the most promising candidate for photocatalytic applications. This work opens an avenue for the design of highly efficient heterostructure photocatalysts for solar-to-energy applications.
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Affiliation(s)
- Hailing Guo
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Zhaofu Zhang
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Bingquan Huang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Xiting Wang
- School of Electrical Engineering, Wuhan University, Wuhan, 430072, China
| | - Huan Niu
- School of Electrical Engineering, Wuhan University, Wuhan, 430072, China
| | - Yuzheng Guo
- School of Electrical Engineering, Wuhan University, Wuhan, 430072, China
| | - Baikui Li
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Ruisheng Zheng
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Honglei Wu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
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Zhang W, Shi C, He C, Bai M. External-strain induced transition from Schottky to ohmic contact in Graphene/InS and Graphene/Janus In2SSe heterostructures. J SOLID STATE CHEM 2020. [DOI: 10.1016/j.jssc.2020.121511] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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Pham KD, Nguyen TD, Phuc HV, Hieu NN, Bui H, Amin B, Nguyen CV. Strain and electric field engineering of band alignment in InSe/Ca(OH)2 heterostructure. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.136649] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Sun L, Cui Y, Peng L, Du J, Wang S, Huang Y. Two-dimensional blue-phosphorene-phase germanium monochalcogenide photocatalysts for water splitting: From ultraviolet to visible absorption. J Catal 2019. [DOI: 10.1016/j.jcat.2019.03.031] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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