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Chen Y, Liu G, Wei L, Zhao J, Zhang G. Effect of bending deformation on the electronic and optical properties of O atoms adsorbed by Be 3N 2. J Mol Model 2024; 30:129. [PMID: 38598099 DOI: 10.1007/s00894-024-05924-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 04/02/2024] [Indexed: 04/11/2024]
Abstract
CONTEXT In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation. METHODS All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange-correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst-Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10-6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10-5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(- 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018.
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Affiliation(s)
- Yuling Chen
- College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, Liaoning Province, People's Republic of China
| | - Guili Liu
- College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, Liaoning Province, People's Republic of China.
| | - Lin Wei
- College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, Liaoning Province, People's Republic of China
| | - Jingwei Zhao
- College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang, Liaoning Province, People's Republic of China
| | - Guoying Zhang
- College of Physical Science and Technology, Shenyang Normal University, Shenyang, Liaoning Province, People's Republic of China
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Olatomiwa A, Adam T, Edet C, Adewale A, Chik A, Mohammed M, Gopinath SC, Hashim U. Recent advances in density functional theory approach for optoelectronics properties of graphene. Heliyon 2023; 9:e14279. [PMID: 36950613 PMCID: PMC10025043 DOI: 10.1016/j.heliyon.2023.e14279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 02/28/2023] [Accepted: 03/01/2023] [Indexed: 03/09/2023] Open
Abstract
Graphene has received tremendous attention among diverse 2D materials because of its remarkable properties. Its emergence over the last two decades gave a new and distinct dynamic to the study of materials, with several research projects focusing on exploiting its intrinsic properties for optoelectronic devices. This review provides a comprehensive overview of several published articles based on density functional theory and recently introduced machine learning approaches applied to study the electronic and optical properties of graphene. A comprehensive catalogue of the bond lengths, band gaps, and formation energies of various doped graphene systems that determine thermodynamic stability was reported in the literature. In these studies, the peculiarity of the obtained results reported is consequent on the nature and type of the dopants, the choice of the XC functionals, the basis set, and the wrong input parameters. The different density functional theory models, as well as the strengths and uncertainties of the ML potentials employed in the machine learning approach to enhance the prediction models for graphene, were elucidated. Lastly, the thermal properties, modelling of graphene heterostructures, the superconducting behaviour of graphene, and optimization of the DFT models are grey areas that future studies should explore in enhancing its unique potential. Therefore, the identified future trends and knowledge gaps have a prospect in both academia and industry to design future and reliable optoelectronic devices.
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Affiliation(s)
- A.L. Olatomiwa
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia
- Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, 02600, Arau, Perlis, Malaysia
| | - Tijjani Adam
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia
- Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, 02600, Arau, Perlis, Malaysia
- Micro System Technology, Centre of Excellence (CoE), Universiti Malaysia Perlis (UniMAP), Pauh Campus, 02600, Arau, Perlis, Malaysia
| | - C.O. Edet
- Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, 02600, Arau, Perlis, Malaysia
- Institute of Engineering Mathematics, Universiti Malaysia Perlis, 02600, Arau, Perlis, Malaysia
- Department of Physics, Cross River University of Technology, Calabar, Nigeria
| | - A.A. Adewale
- Department of Pure and Applied Physics, Ladoke Akintola University of Technology, Ogbomoso, Nigeria
| | - Abdullah Chik
- Centre for Frontier Materials Research, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia
- Faculty of Chemical Engineering and Technology, Universiti Malaysia Perlis (UniMAP), Taman Muhibbah, Jejawi, 02600, Arau, Perlis, Malaysia
| | - Mohammed Mohammed
- Faculty of Chemical Engineering and Technology, Universiti Malaysia Perlis (UniMAP), Taman Muhibbah, Jejawi, 02600, Arau, Perlis, Malaysia
- Center of Excellence Geopolymer & Green Technology (CEGeoGTech), Universiti Malaysia Perlis, 02600, Arau, Perlis, Malaysia
| | - Subash C.B. Gopinath
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia
- Micro System Technology, Centre of Excellence (CoE), Universiti Malaysia Perlis (UniMAP), Pauh Campus, 02600, Arau, Perlis, Malaysia
- Faculty of Chemical Engineering and Technology, Universiti Malaysia Perlis (UniMAP), Taman Muhibbah, Jejawi, 02600, Arau, Perlis, Malaysia
| | - U. Hashim
- Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia
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Hu J, Zhong C, Wu W, Liu N, Liu Y, Yang SA, Ouyang C. 2D honeycomb borophene oxide: a promising anode material offering super high capacity for Li/Na-ion batteries. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:065001. [PMID: 31631885 DOI: 10.1088/1361-648x/ab4f4d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Rational design of novel two-dimensional (2D) electrode materials with high capacity is crucial for the further development of Li-ion and Na-ion batteries. Herein, based on first-principles calculations, we systemically investigate Li and Na storage behaviors in the recently discovered 2D topological nodal-loop metal-the honeycomb borophene oxide (h-B2O). We show that h-B2O is an almost ideal anode material. It has good conductivity before and after Li/Na adsorption, fast ion diffusion with diffusion barrier less than 0.5 eV, low open-circuit voltage (<1 V), and small lattice change (<6.2%) during intercalation. Most remarkably, its theoretical storage capacity is extremely high, reaching up to 2137 mAh · g-1 for Li and 1425 mAh · g-1 for Na. Its Li storage capacity is more than six times higher than graphite (~372 mAh · g-1), and is almost the highest among all 2D materials discovered to date. Our results strongly suggest that 2D h-B2O is an exceedingly promising anode material for both Li- and Na-ion batteries with super high capacity.
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Affiliation(s)
- Junping Hu
- School of Science, Nanchang Institute of Technology, Nanchang 330099, People's Republic of China
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Ullah S, Denis PA, Sato F. Theoretical investigation of various aspects of two dimensional holey boroxine, B3O3. RSC Adv 2019; 9:37526-37536. [PMID: 35542274 PMCID: PMC9075605 DOI: 10.1039/c9ra07338h] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/12/2019] [Accepted: 11/10/2019] [Indexed: 01/13/2023] Open
Abstract
By means of first-principles calculations, we study the structural, electronic and mechanical properties of the newly synthesized boron–oxygen holey framework (Chem. Comm. 2018, 54, 3971). It has a planar structure formed by B3O3 hexagons, which are joined via strong covalent boron–boron bonds. The six B3O3 units are connected with six-fold symmetry exhibiting a large hole with a surface area of 23 Å2, which is ideal for the adsorption of alkalis. For neutral alkalis, we found that the adsorption energy of potassium is 14 and 12 kcal mol−1 larger than those determined for sodium and lithium, respectively. In contrast, for alkali cations, there is a clear preference for lithium over sodium and potassium. With regard to its electronic properties, it is an insulator with an electronic band gap of 5.3 eV, at the HSE level of theory. We further investigate the effect of strain on the band gap and find it a less efficient technique to tune the electronic properties. The wide optical gap of B3O3 can be utilized in ultraviolet (UV) applications, such as UV photodetectors, etc. Additionally, the 2D elastic modulus of B3O3 (53.9 N m−1) is larger than that of Be3N2, silicene, and germanene. Besides, we also report bilayer and graphite-like bulk B3O3 and furthermore, find that the optoelectronic properties of the bilayer can be tuned with an external electric field. The great tunability of optical properties from UV to the visible range offers a vast range of applications in optoelectronics. 2D boroxine is a stable material with outstanding properties which warrant its use in different applications such as sensing and optoelectronics, as revealed by first principles calculations.![]()
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Affiliation(s)
- Saif Ullah
- Departamento de Física
- Instituto de Ciências Exatas
- Campus Universitário
- Universidade Federal de Juiz de Fora
- Juiz de Fora
| | - Pablo A. Denis
- Computational Nanotechnology
- DETEMA
- Facultad de Química
- UDELAR
- 11800 Montevideo
| | - Fernando Sato
- Departamento de Física
- Instituto de Ciências Exatas
- Campus Universitário
- Universidade Federal de Juiz de Fora
- Juiz de Fora
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