Narrow-gap physical vapour deposition synthesis of ultrathin SnS1-xSex (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties

2D Free-Standing GeS1-xSex with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics

Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.

Phase-Controllable Growth of Air-Stable SnS Nanostructures for High-Performance Photodetectors with Ultralow Dark Current

The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to β-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to β phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated β-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 μs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the β-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.

UV-VIS-NIR broadband flexible photodetector based on layered lead-free organic-inorganic hybrid perovskite

The flexible photodetector is viewed as a research hotspot for numerous advanced optoelectronic applications. Recent progress has manifested that lead-free layered organic-inorganic hybrid perovskites (OIHPs) are highly attractive to engineering flexible photodetectors due to the effective overlapping of several unique properties, including efficient optoelectronic characteristics, exceptional structural flexibility, and the absence of Pb toxicity to humans and the environment. The narrow spectral response of most flexible photodetectors with lead-free perovskites is still a big challenge to practical applications. In this work, we demonstrate the flexible photodetector based on a novel (to our knowledge) narrow-bandgap OIHP of (BA)₂(MA)Sn₂I₇, with achieving a broadband response across an ultraviolet-visible-near infrared (UV-VIS-NIR) region as 365-1064 nm. The high responsivities of 28.4 and 2.0 × 10^-2 A/W are obtained at 365 and 1064 nm, respectively, corresponding to detectives of 2.3 × 10¹⁰ and 1.8 × 10⁷ Jones. This device also shows remarkable photocurrent stability after 1000 bending cycles. Our work indicates the huge application prospect of Sn-based lead-free perovskites in high-performance and eco-friendly flexible devices.

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment via low-pressure physical vapor deposition (LPPVD) and dry transfer method. The performance compared with the distinctive thickness of anisotropic SnS component was first studied. The fabricated device with a thick (80 nm) SnS nanosheet exhibits a larger rectification ratio exceeding 10³. Moreover, the SnS/InSe heterostructure shows a broadband spectral photoresponse from 405 to 1100 nm with a significant photovoltaic effect. Due to efficient photogenerated carrier separation across the wide depletion region at zero bias, the device with thinner (12.4 nm) SnS exhibits trade-off photoresponse performance with a maximum responsivity of 215 mA W^-1, an external quantum efficiency of 42.2%, specific detectivity of 1.05 × 10¹⁰ Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.

Mechanically Induced Highly Efficient Hydrogen Evolution from Water over Piezoelectric SnSe nanosheets

Piezoelectric nanomaterials open new avenues in driving green catalysis processes (e.g., H₂ evolution from water) through harvesting mechanical energy, but their catalytic efficiency is still limited. The predicted enormous piezoelectricity for 2D SnSe, together with its high charge mobility and excellent flexibility, renders it an ideal candidate for stimulating piezocatalysis redox reactions. In this work, few-layer piezoelectric SnSe nanosheets (NSs) are utilized for mechanically induced H₂ evolution from water. The finite elemental method simulation demonstrates an unprecedent maximal piezoelectric potential of 44.1 V for a single SnSe NS under a pressure of 100 MPa. A record-breaking piezocurrent density of 0.3 mA cm^-2 is obtained for SnSe NSs-based electrode under ultrasonic excitation (100 W, 45 kHz), which is about three orders of magnitude greater than that of reported piezocatalysts. Moreover, an exceptional H₂ production rate of 948.4 µmol g^-1 h^-1 is achieved over the SnSe NSs without any cocatalyst, far exceeding most of the reported piezocatalysts and competitive with the current photocatalysis technology. The findings not only enrich the potential piezocatalysis materials, but also provide useful guidance toward high-efficiency mechanically driven chemical reactions such as H₂ evolution from water.

Precursor Engineering for the Synthesis of Mixed Anionic Metal (Cu, Mn) Chalcogenide Nanomaterials via Solvent-Less Synthesis

Metal-organic ligands with mixed chalcogenides are potential compounds for the preparation of mixed anionic metal chalcogenide alloys. However, only a few of such ligands are known, and their complexes are not well explored. We have prepared homo- and hetero-dichalcogenoimidodiphosphinate [(EE'PⁱPr₂NH)] (E, E' = Se, Se; S, S; S, Se) complexes of manganese and copper through metathetical reactions. The X-ray single crystal structure of [Mn{(SePⁱPr₂)₂N}₂] 1 revealed a triclinic crystal system, with a MnSe₄ core unit, whereas the crystal structure determination of [Mn{(SPⁱPr₂)(SePⁱPr₂)N}₂] 2 indicated a triclinic crystal system with a Mn(S/Se)₂ unit. Both metal centers are tetrahedral, with two deprotonated bidentate ligands forming the coordination sphere. The free ligand was found to exhibit a gauche configuration in the solid state. The energies of the various rotamers of dithio-analogue were studied by DFT calculations. The decomposition behavior of complexes with homo- and heterochalcogenides was investigated, and the complexes were employed as single-source precursors to generate manganese and copper chalcogenides through solvent-less melt reactions between 500 and 550 °C. The deposited powders were characterized by powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), transmission electron microscopy (TEM), and elemental mapping. MnS, MnSe₂, and MnSSe phases were obtained from the decomposition of respective manganese complexes. In contrast, the decomposition of copper-based complexes yielded Cu_2-xSe and the sulfur-doped Cu₃Se₂ phase from seleno- and mixed thio/seleno-complexes of Cu, respectively. The morphology ranged from random sheet-like structures to agglomerated platelets, while the selected area electron diffraction (SAED) revealed the crystalline nature of the materials. Depending on the nature of the complex and the temperature, different amounts of phosphorus were present as an impurity in the synthesized products.

Self-driven SnS1-xSex alloy/GaAs heterostructure based unique polarization sensitive photodetectors

With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p-n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnS_1-xSe_x (x = 0, 0.5, 1) nanosheets and the construction of a hybrid SnS_0.5Se_0.5/GaAs heterostructure based self-driven photodetector. The strong anisotropy of 2D SnS_1-xSe_x is demonstrated theoretically and experimentally. The self-driven photodetector shows high sensitivity to incident light from the visible to near-infrared regime. At the wavelength of 405 nm, the device enables maximum responsivity of 10.2 A W^-1, high detectivity of 4.8 × 10¹² Jones and fast response speed of 0.5/3.47 ms. Impressively, such a heterostructure device exhibits anisotropic photodetection characteristics with the dichroic ratio of ∼1.25 at 405 nm and ∼1.45 at 635 nm. These remarkable features can be attributed to the high-quality built-in potential at the SnS_0.5Se_0.5/GaAs interface and the alloy engineering, which effectively separates the photogenerated carriers and suppresses the deep-level defects, respectively. These results imply the great potential of our SnS_0.5Se_0.5/GaAs heterostructure for high-performance photodetection devices.

Periodic nanostructures: preparation, properties and applications

Periodic nanostructures, a group of nanomaterials consisting of single or multiple nano units/components periodically arranged into ordered patterns (e.g., vertical and lateral superlattices), have attracted tremendous attention in recent years due to their extraordinary physical and chemical properties that offer a huge potential for a multitude of applications in energy conversion, electronic and optoelectronic applications. Recent advances in the preparation strategies of periodic nanostructures, including self-assembly, epitaxy, and exfoliation, have paved the way to rationally modulate their ferroelectricity, superconductivity, band gap and many other physical and chemical properties. For example, the recent discovery of superconductivity observed in "magic-angle" graphene superlattices has sparked intensive studies in new ways, creating superlattices in twisted 2D materials. Recent development in the various state-of-the-art preparations of periodic nanostructures has created many new ideas and findings, warranting a timely review. In this review, we discuss the current advances of periodic nanostructures, including their preparation strategies, property modulations and various applications.

Optical phonons of SnSe(1-x)Sx layered semiconductor alloys

The evolution of the optical phonons in layered semiconductor alloys SnSe_(1-x)S_x is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the A_g² mode of SnSe_(1-x)S_x (0 ≤ x ≤ 1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of A_g¹, A_g² and B_3g¹ in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B_3g², A_g³ and A_g⁴ show two-mode behavior.

2D material broadband photodetectors

Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.

Self-Powered SnS1-xSex Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range

Alloy engineering and heterostructures designing are two efficient methods to improve the photosensitivity of two-dimensional (2D) material-based photodetectors. Herein, we report the first-principle calculation about the band structure of SnS_1-xSe_x (0 ≤ x ≤ 1) and synthesize these alloy nanosheets. Systematic measurements indicate that SnS_0.25Se_0.75 exhibits the highest hole mobility (0.77 cm²·V^-1·s^-1) and a moderate photoresponsivity (4.44 × 10² A·W^-1) with fast response speed (32.1/57.5 ms) under 635 nm irradiation. Furthermore, to reduce the dark current and strengthen the light absorption, a self-driven SnS_0.25Se_0.75/n-Si device has been fabricated. The device achieved a preeminent photo-responsivity of 377 mA·W^-1, a detectivity of ∼10¹¹ Jones and I_light/I_dark ratio of ∼4.5 × 10². In addition, the corresponding rising/decay times are as short as 4.7/3.9 ms. Moreover, a broadband sensitivity from 635 to 1200 nm is obtained and the related photoswitching curves are stable and reproducibility. Noticeably, the above parameters are comparable or superior to the most of reported group IV_A layered materials-based self-driven photodetectors. Last, the synergistic effects between the SnS_0.25Se_0.75 nanosheets and the n-Si have been discussed by the band alignment. These brilliant results will pave a new pathway for the development of next generation 2D alloy-based photoelectronic devices.