1
|
Hossen MF, Shendokar S, Aravamudhan S. Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:410. [PMID: 38470741 DOI: 10.3390/nano14050410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/04/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
As layered materials, transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials. Interestingly, the characteristics of these materials are transformed from bulk to monolayer. The atomically thin TMDC materials can be a good alternative to group III-V and graphene because of their emerging tunable electrical, optical, and magnetic properties. Although 2D monolayers from natural TMDC materials exhibit the purest form, they have intrinsic defects that limit their application. However, the synthesis of TMDC materials using the existing fabrication tools and techniques is also not immune to defects. Additionally, it is difficult to synthesize wafer-scale TMDC materials for a multitude of factors influencing grain growth mechanisms. While defect engineering techniques may reduce the percentage of defects, the available methods have constraints for healing defects at the desired level. Thus, this holistic review of 2D TMDC materials encapsulates the fundamental structure of TMDC materials, including different types of defects, named zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D). Moreover, the existing defect engineering methods that relate to both formation of and reduction in defects have been discussed. Finally, an attempt has been made to correlate the impact of defects and the properties of these TMDC materials.
Collapse
Affiliation(s)
- Moha Feroz Hossen
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Sachin Shendokar
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Shyam Aravamudhan
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| |
Collapse
|
2
|
Fernandes J, Grzonka J, Araújo G, Schulman A, Silva V, Rodrigues J, Santos J, Bondarchuk O, Ferreira P, Alpuim P, Capasso A. Bipolar Resistive Switching in 2D MoSe 2 Grown by Atmospheric Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1767-1778. [PMID: 38113456 DOI: 10.1021/acsami.3c14215] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are highly promising nanomaterials for various electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. 2D MoSe2 stands out for having high electrical conductivity, charge carrier mobility, and melting point. While these features make it particularly appropriate as a switching layer in memristive devices, reliable and scalable production of large-area 2D MoSe2 still represents a challenge. In this study, we manufacture 2D MoSe2 films by atmospheric-pressure chemical vapor deposition and investigate them on the atomic scale. We selected and transferred MoSe2 bilayer to serve as a switching layer between asymmetric Au-Cu electrodes in miniaturized crossbar vertical memristors. The electrochemical metallization devices showed forming-free, bipolar resistive switching at low voltages, with clearly identifiable nonvolatile states. Other than low-power neuromorphic computing, low switching voltages approaching the range of biological action potentials could unlock hybrid biological interfaces.
Collapse
Affiliation(s)
- João Fernandes
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Justyna Grzonka
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Guilherme Araújo
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Alejandro Schulman
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - Vitor Silva
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Rodrigues
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Santos
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | | | - Paulo Ferreira
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Mechanical Engineering Department and IDMEC, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, Portugal
- Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, United States
| | - Pedro Alpuim
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Centro de Física das Universidades do Minho e do Porto, Universidade do Minho, 4710-057 Braga, Portugal
| | - Andrea Capasso
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| |
Collapse
|
3
|
Zhu H, Nayir N, Choudhury TH, Bansal A, Huet B, Zhang K, Puretzky AA, Bachu S, York K, Mc Knight TV, Trainor N, Oberoi A, Wang K, Das S, Makin RA, Durbin SM, Huang S, Alem N, Crespi VH, van Duin ACT, Redwing JM. Step engineering for nucleation and domain orientation control in WSe 2 epitaxy on c-plane sapphire. NATURE NANOTECHNOLOGY 2023; 18:1295-1302. [PMID: 37500779 DOI: 10.1038/s41565-023-01456-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 06/13/2023] [Indexed: 07/29/2023]
Abstract
Epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe2 on c-plane sapphire by metal-organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe2 nucleation, imparting either a 0° or 60° orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.
Collapse
Affiliation(s)
- Haoyue Zhu
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
| | - Nadire Nayir
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Physics, Karamanoglu Mehmetbey University, Karaman, Turkey
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Tanushree H Choudhury
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai, India
| | - Anushka Bansal
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Benjamin Huet
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
| | - Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Krystal York
- Department of Electrical Engineering, Western Michigan University, Kalamazoo, MI, USA
| | - Thomas V Mc Knight
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Nicholas Trainor
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Aaryan Oberoi
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USA
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
| | - Saptarshi Das
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USA
| | - Robert A Makin
- Department of Electrical Engineering, Western Michigan University, Kalamazoo, MI, USA
| | - Steven M Durbin
- Department of Electrical Engineering, Western Michigan University, Kalamazoo, MI, USA
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, USA
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, USA
| | - Nasim Alem
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Vincent H Crespi
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
| | - Adri C T van Duin
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Joan M Redwing
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
| |
Collapse
|
4
|
Jung YS, Choi HJ, Park SH, Kim D, Park SH, Cho YS. Nanoampere-Level Piezoelectric Energy Harvesting Performance of Lithography-Free Centimeter-Scale MoS 2 Monolayer Film Generators. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200184. [PMID: 35451217 DOI: 10.1002/smll.202200184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 03/27/2022] [Indexed: 06/14/2023]
Abstract
2D transition-metal dichalcogenides have been reported to possess piezoelectricity due to their lack of inversion symmetry; thus, they are potentially applicable as electromechanical energy harvesters. Herein, the authors propose a lithography-free piezoelectric energy harvester composed of centimeter-scale MoS2 monolayer films with an interdigitated electrode pattern that is enabled only by the large scale of the film. High-quality large-scale synthesis of the monolayer films is conducted by low-pressure chemical vapor deposition with the assistance of an unprecedented Na2 S promoter. The extra sulfur supplied by Na2 S critically passivates the sulfur vacancies. The energy harvester having a large active area of ≈18.3 mm2 demonstrates an unexpectedly high piezoelectric energy harvesting performance of ≈400.4 mV and ≈40.7 nA under a bending strain of 0.57%, with the careful adjustment of side electrodes along the zigzag atomic arrays in the two dominant domain structure. Nanoampere-level harvesting has not yet been reported with any 2D material-based harvester.
Collapse
Affiliation(s)
- Ye Seul Jung
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Hong Je Choi
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
- Samsung Electro-Mechanics Co. Ltd, Gyeonggi-do, 16674, Korea
| | - Sung Hyun Park
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Daeyeon Kim
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Seung-Han Park
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Yong Soo Cho
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| |
Collapse
|
5
|
Kim J, Seung H, Kang D, Kim J, Bae H, Park H, Kang S, Choi C, Choi BK, Kim JS, Hyeon T, Lee H, Kim DH, Shim S, Park J. Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics. NANO LETTERS 2021; 21:9153-9163. [PMID: 34677071 DOI: 10.1021/acs.nanolett.1c02991] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.
Collapse
Affiliation(s)
- Jihoon Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyojin Seung
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Dohun Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Joodeok Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyeonhu Bae
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Hayoung Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungsu Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Back Kyu Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Ji Soo Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Taeghwan Hyeon
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hoonkyung Lee
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Sangdeok Shim
- Department of Chemistry, Sunchon National University, Sunchon 57922, Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Republic of Korea
| |
Collapse
|
6
|
Lee Y, Lee J, Chung H, Kim J, Lee Z. In Situ Scanning Transmission Electron Microscopy Study of MoS 2 Formation on Graphene with a Deep-Learning Framework. ACS OMEGA 2021; 6:21623-21630. [PMID: 34471766 PMCID: PMC8388093 DOI: 10.1021/acsomega.1c03002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
Atomic-scale information is essential for understanding and designing unique structures and properties of two-dimensional (2D) materials. Recent developments in in situ transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) enable research to provide abundant insights into the growth of nanomaterials. In this study, 2D MoS2 is synthesized on a suspended graphene substrate inside a TEM column through thermolysis of the ammonium tetrathiomolybdate (NH4)2MoS4 precursor at 500 °C. To avoid misinterpretation of the in situ STEM images, a deep-learning framework, DeepSTEM, is developed. The DeepSTEM framework successfully reconstructs an object function in atomic-resolution STEM imaging for accurate determination of the atomic structure and dynamic analysis. In situ STEM imaging with DeepSTEM enables observation of the edge configuration, formation, and reknitting progress of MoS2 clusters with the formation of a mirror twin boundary. The synthesized MoS2/graphene heterostructure shows various twist angles, as revealed by atomic-resolution TEM. This deep-learning framework-assisted in situ STEM imaging provides atomic information for in-depth studies on the growth and structure of 2D materials and shows the potential use of deep-learning techniques in 2D material research.
Collapse
Affiliation(s)
- Yeongdong Lee
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jongyeong Lee
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Handolsam Chung
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jaemin Kim
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| |
Collapse
|
7
|
Kim JH, Kim S, Park SO, Jung GY, Song S, Sohn A, Kim S, Kwak SK, Kwon S, Lee Z. Antiphase Boundaries as Faceted Metallic Wires in 2D Transition Metal Dichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000788. [PMID: 32775161 PMCID: PMC7404160 DOI: 10.1002/advs.202000788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Revised: 03/26/2020] [Indexed: 06/11/2023]
Abstract
Antiphase boundaries (APBs) in 2D transition metal dichalcogenides have attracted wide interest as 1D metallic wires embedded in a semiconducting matrix, which could be exploited in fully 2D-integrated circuits. Here, the anisotropic morphologies of APBs (i.e., linear and saw-toothed APBs) in the nanoscale are investigated. The experimental and computational results show that despite their anisotropic nanoscale morphologies, all APBs adopt a predominantly chalcogen-oriented dense structure to maintain the energetically most stable atomic configuration. Moreover, the effect of the nanoscale morphology of an APB on electron transport from two-probe field effect transistor measurements is investigated. A saw-toothed APB has a considerably lower electron mobility than a linear APB, indicating that kinks between facets are the main factors of scattering. The observations contribute to the systematical understanding of the faceted APBs and its impact on electrical transport behavior and it could potentially extend the applications of 2D materials through defect engineering to achieve the desired properties.
Collapse
Affiliation(s)
- Jung Hwa Kim
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science (IBS)Ulsan44919Republic of Korea
| | - Se‐Yang Kim
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Sung O. Park
- Department of Energy EngineeringSchool of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Gwan Yeong Jung
- Department of Energy EngineeringSchool of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Seunguk Song
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Ahrum Sohn
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Sang‐Woo Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Sang Kyu Kwak
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science (IBS)Ulsan44919Republic of Korea
- Department of Energy EngineeringSchool of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Soon‐Yong Kwon
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
| | - Zonghoon Lee
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Republic of Korea
- Center for Multidimensional Carbon MaterialsInstitute for Basic Science (IBS)Ulsan44919Republic of Korea
| |
Collapse
|
8
|
Sinha S, Zhu T, France-Lanord A, Sheng Y, Grossman JC, Porfyrakis K, Warner JH. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nat Commun 2020; 11:823. [PMID: 32041958 PMCID: PMC7010709 DOI: 10.1038/s41467-020-14481-z] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Accepted: 01/06/2020] [Indexed: 11/09/2022] Open
Abstract
Lead Iodide (PbI2) is a large bandgap 2D layered material that has potential for semiconductor applications. However, atomic level study of PbI2 monolayer has been limited due to challenges in obtaining thin crystals. Here, we use liquid exfoliation to produce monolayer PbI2 nanodisks (30-40 nm in diameter and > 99% monolayer purity) and deposit them onto suspended graphene supports to enable atomic structure study of PbI2. Strong epitaxial alignment of PbI2 monolayers with the underlying graphene lattice occurs, leading to a phase shift from the 1 T to 1 H structure to increase the level of commensuration in the two lattice spacings. The fundamental point vacancy and nanopore structures in PbI2 monolayers are directly imaged, showing rapid vacancy migration and self-healing. These results provide a detailed insight into the atomic structure of monolayer PbI2, and the impact of the strong van der Waals interaction with graphene, which has importance for future applications in optoelectronics.
Collapse
Affiliation(s)
- Sapna Sinha
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Taishan Zhu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Arthur France-Lanord
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Yuewen Sheng
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
| | - Kyriakos Porfyrakis
- Faculty of Engineering and Science, University of Greenwich, Central Avenue, Chatham Maritime, Kent, ME4 4TB, UK
| | - Jamie H Warner
- Department of Mechanical Engineering, University of Texas at Austin, 204 Dean Keeton Street, Austin, 78712, USA.
| |
Collapse
|
9
|
Balasubramanyam S, Bloodgood MA, van Ommeren M, Faraz T, Vandalon V, Kessels WMM, Verheijen MA, Bol AA. Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS 2 Layers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:3873-3885. [PMID: 31880425 PMCID: PMC6978813 DOI: 10.1021/acsami.9b19716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Accepted: 12/27/2019] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) such as WS2 are promising materials for nanoelectronic applications. However, growth of the desired horizontal basal-plane oriented 2D TMD layers is often accompanied by the growth of vertical nanostructures that can hinder charge transport and, consequently, hamper device application. In this work, we discuss both the formation and suppression of vertical nanostructures during plasma-enhanced atomic layer deposition (PEALD) of WS2. Using scanning transmission electron microscopy studies, formation pathways of vertical nanostructures are established for a two-step (AB-type) PEALD process. Grain boundaries are identified as the principal formation centers of vertical nanostructures. Based on the obtained insights, we introduce an approach to suppress the growth of vertical nanostructures, wherein an additional step (C)-a chemically inert Ar plasma or a reactive H2 plasma-is added to the original two-step (AB-type) PEALD process. This approach reduces the vertical nanostructure density by 80%. It was confirmed that suppression of vertical nanostructures goes hand in hand with grain size enhancement. The vertical nanostructure density reduction consequently lowers film resistivity by an order of magnitude. Insights obtained in this work can contribute toward devising additional pathways, besides plasma treatments, for suppressing the growth of vertical nanostructures and improving the material properties of 2D TMDs that are relevant for nanoelectronic device applications.
Collapse
Affiliation(s)
- Shashank Balasubramanyam
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Matthew A. Bloodgood
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Mark van Ommeren
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Tahsin Faraz
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Vincent Vandalon
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
- Eurofins
Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| |
Collapse
|
10
|
Chen J, Jung GS, Ryu GH, Chang RJ, Zhou S, Wen Y, Buehler MJ, Warner JH. Atomically Sharp Dual Grain Boundaries in 2D WS 2 Bilayers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1902590. [PMID: 31448580 DOI: 10.1002/smll.201902590] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2019] [Revised: 07/25/2019] [Indexed: 06/10/2023]
Abstract
It is shown that tilt grain boundaries (GBs) in bilayer 2D crystals of the transition metal dichalcogenide WS2 can be atomically sharp, where top and bottom layer GBs are located within sub-nanometer distances of each other. This expands the current knowledge of GBs in 2D bilayer crystals, beyond the established large overlapping GB types typically formed in chemical vapor deposition growth, to now include atomically sharp dual bilayer GBs. By using atomic-resolution annular dark-field scanning transmission electron microscopy (ADF-STEM) imaging, different atomic structures in the dual GBs are distinguished considering bilayers with a 3R (AB stacking)/2H (AA' stacking) interface as well as bilayers with 2H/2H boundaries. An in situ heating holder is used in ADF-STEM and the GBs are stable to at least 800 °C, with negligible thermally induced reconstructions observed. Normal dislocation cores are seen in one WS2 layer, but the second WS2 layer has different dislocation structures not seen in freestanding monolayers, which have metal-rich clusters to accommodate the stacking mismatch of the 2H:3R interface. These results reveal the competition between maintaining van der Waals bilayer stacking uniformity and dislocation cores required to stitch tilted bilayer GBs together.
Collapse
Affiliation(s)
- Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Gang Seob Jung
- Laboratory for Atomistic and Molecular Mechanics (LAMM), Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, 02139, USA
| | - Gyeong Hee Ryu
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Si Zhou
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - Markus J Buehler
- Laboratory for Atomistic and Molecular Mechanics (LAMM), Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, 02139, USA
- Center for Computational Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA, 02139, USA
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| |
Collapse
|
11
|
Ryu GH, Chen J, Wen Y, Zhou S, Chang RJ, Warner JH. Atomic structural catalogue of defects and vertical stacking in 2H/3R mixed polytype multilayer WS 2 pyramids. NANOSCALE 2019; 11:10859-10871. [PMID: 31135012 DOI: 10.1039/c9nr01783f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We examine the atomic structure of chemical vapour deposition grown multilayer WS2 pyramids using aberration corrected annular dark field scanning transmission electron microscopy coupled with an in situ heating holder. The stacking orders and specific types of defects after partial degradation by S and W atomic loss at high temperature are resolved layer-by-layer. Our study of an individual WS2 pyramid with at least six layers, reveals a mixed 2H and 3R polytype stacking. Etching occurred both top and bottom of the WS2 pyramid, which aids in determining the exact vertical layer stacking configurations in the thicker regions. We provide an extensive catalogue of the contrast profiles associated with defects in WS2 as a function of layer number and stacking type, as imaged using ADF-STEM. These results provide extensive details about the identification of a wide range of defects in S2 layers, and the unique ADF-STEM contrast patterns that arise from complex multilayer stacking.
Collapse
Affiliation(s)
- Gyeong Hee Ryu
- Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, UK.
| | | | | | | | | | | |
Collapse
|
12
|
Zhang X, Zhang F, Wang Y, Schulman DS, Zhang T, Bansal A, Alem N, Das S, Crespi VH, Terrones M, Redwing JM. Defect-Controlled Nucleation and Orientation of WSe 2 on hBN: A Route to Single-Crystal Epitaxial Monolayers. ACS NANO 2019; 13:3341-3352. [PMID: 30758945 DOI: 10.1021/acsnano.8b09230] [Citation(s) in RCA: 50] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A defect-controlled approach for the nucleation and epitaxial growth of WSe2 on hBN is demonstrated. The WSe2 domains exhibit a preferred orientation of over 95%, leading to a reduced density of inversion domain boundaries (IDBs) upon coalescence. First-principles calculations and experimental studies as a function of growth conditions and substrate pretreatment confirm that WSe2 nucleation density and orientation are controlled by the hBN surface defect density rather than thermodynamic factors. Detailed transmission electron microscopy analysis provides support for the role of single-atom vacancies on the hBN surface that trap W atoms and break surface symmetry leading to a reduced formation energy for one orientation of WSe2 domains. Through careful control of nucleation and extended lateral growth time, fully coalesced WSe2 monolayer films on hBN were achieved. Low-temperature photoluminescence (PL) measurements and transport measurements of back-gated field-effect transistor devices fabricated on WSe2/hBN films show improved optical and electrical properties compared to films grown on sapphire under similar conditions. Our results reveal an important nucleation mechanism for the epitaxial growth of van der Waals heterostructures and demonstrate hBN as a superior substrate for single-crystal transition-metal dichalcogenide (TMD) films, resulting in a reduced density of IDBs and improved properties. The results motivate further efforts focused on the development of single crystal hBN substrates and epilayers for synthesis of wafer-scale single crystal TMD films.
Collapse
|
13
|
Mendes RG, Pang J, Bachmatiuk A, Ta HQ, Zhao L, Gemming T, Fu L, Liu Z, Rümmeli MH. Electron-Driven In Situ Transmission Electron Microscopy of 2D Transition Metal Dichalcogenides and Their 2D Heterostructures. ACS NANO 2019; 13:978-995. [PMID: 30673226 DOI: 10.1021/acsnano.8b08079] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Investigations on monolayered transition metal dichalcogenides (TMDs) and TMD heterostructures have been steadily increasing over the past years due to their potential application in a wide variety of fields such as microelectronics, sensors, batteries, solar cells, and supercapacitors, among others. The present work focuses on the characterization of TMDs using transmission electron microscopy, which allows not only static atomic resolution but also investigations into the dynamic behavior of atoms within such materials. Herein, we present a body of recent research from the various techniques available in the transmission electron microscope to structurally and analytically characterize layered TMDs and briefly compare the advantages of TEM with other characterization techniques. Whereas both static and dynamic aspects are presented, special emphasis is given to studies on the electron-driven in situ dynamic aspects of these materials while under investigation in a transmission electron microscope. The collection of the presented results points to a future prospect where electron-driven nanomanipulation may be routinely used not only in the understanding of fundamental properties of TMDs but also in the electron beam engineering of nanocircuits and nanodevices.
Collapse
Affiliation(s)
- Rafael G Mendes
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Jinbo Pang
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Alicja Bachmatiuk
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
- Centre of Polymer and Carbon Materials , Polish Academy of Sciences , M. Curie-Skłodowskiej 34 , Zabrze 41-819 , Poland
| | | | | | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
| | - Lei Fu
- College of Chemistry and Molecular Science , Wuhan University , Wuhan 430072 , China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden , P.O. Box 270116, Dresden D-01171 , Germany
- Centre of Polymer and Carbon Materials , Polish Academy of Sciences , M. Curie-Skłodowskiej 34 , Zabrze 41-819 , Poland
| |
Collapse
|