Planar dual-cavity hot-electron photodetectors

Tamm plasmon polariton-based planar hot-electron photodetector for the near-infrared region

Light-trapping devices have always been a topic of intense interest among researchers. One such device that has gained attention is the hot-electron photodetector with a tunable detection wavelength. Photodetectors based on plasmon nanostructures that provide excitation of surface plasmon polaritons are challenging to manufacture. To address this issue, a planar hot-electron photodetector based on a Tamm plasmon polariton localized in a metal-semiconductor-multilayer mirror structure has been proposed in this study. The parameters and materials of the structure were adjusted to ensure perfect absorption at the resonance wavelength. As a result, the photoresponsivity of the proposed device can reach 42.6 mA W-1 at 905 nm. For the first time, the photosensitivity was calculated analytically by solving the dispersion law for the Tamm plasmon polariton.

Grating-assisted hot-electron photodetectors for S- and C-band telecommunication

Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems.

Planar hot-electron photodetection with polarity-switchable photocurrents controlled by the working wavelength

Hot-electron photodetection is attracting increasing interests. Based on internal photoemission mechanism, hot-electron photodetectors (HE PDs) convert incident photon energy into measurable photocurrent. To obtain polarity-switchable photocurrent, one often applies electric bias to reverse the hot-electron flow. However, the employment of bias reduces the device flexibility and increasing the bias voltage degrades the detectivity of the device. Herein, we design a planar HE PD with the polarity-switchable photocurrent controlled by the working wavelength. Optical simulations show that the device exhibits two absorption peaks due to the resonances of two Tamm plasmons (TPs). Electrical calculations predict two corresponding TP-assisted responsivity peaks, but with opposite photocurrent polarities, which are determined by the hot-electron flows with opposite directions. We find that the hot-electron flows are closely related with the population differences of TP-induced hot electrons in two electrodes. We further demonstrate that the photocurrent polarity of the HE PD can be switched by altering working wavelength from one TP wavelength to the other. We believe that this approach paves a route to achieve flexible hot-electron photodetection for extensive applications.

Ultrabroadband hot-hole photodetector based on ultrathin gold film

Hot carriers injected into semiconductor enables below-bandgap photodetection, thus attracting increasing interest. The performance of hot carrier-based device is directly related to the absorptivity of metal. Several strategies such as surface plasmons, metamaterials, and optical cavities are utilized to enhance the weak intrinsic absorption of the metal. However, the detection range is limited by their narrow resonance bandwidth alternatively. Impedance-matched absorbers, whose sheet resistance is equal to half of the free-space impedance (188 Ω), can achieve a wavelength-independent absorptivity up to 50%. Herein, we theoretically design a purely planar hot-hole photodetector based on ultrathin gold film, a new type of metallic impedance-matched absorber. Benefiting both from the efficient absorption and ultrathin nature of the film, we predict that the photoresponsivity of our device can reach 35.7 mA W^-1 under zero bias at the wavelength of 1.3 μm, with a full width at half maximum (FWHM) of detection range reaching 1050 nm, setting a new record for the bandwidth of the hot carrier photodetectors. We also demonstrated that the device is robust to the incident angle and can be tuned through the external bias voltage. This work provides a pathway for broadband hot carrier detectors and other hot carrier-based applications.

Bias voltage-tuned hot-electron optical sensing with planar Au-MoS2-Au junction

Harvesting photoexcited hot electrons in metals promises a number of benefits in optical sensing. In practice, hot-electron optical sensors with tunable performance in electrical sensitivity are still absent. Herein, we propose a design to realize tunable hot-electron optical sensing. The proposed device consists of a one-dimensional grating deposited on a planar Au-MoS₂-Au junction that is used for efficient hot-electron harvesting. Photoelectric simulations show that when grating-assisted plasmonic resonance is excited, bias voltage between two Au layers can be used to manipulate the magnitude and polarity of responsivity at the working wavelength. Therefore, the change in responsivity that originates from the change in refractive index of analyte in which the device is immersed can also be tuned by applied voltage. It is found that when bias voltage is 1 V, the electrical sensitivity doubled compared with that when applied voltage is absent. We believe the bias voltage-tuned strategy that is applied to planar hot-electron harvesting junctions facilitates the development of optical sensing.

Five-layer planar hot-electron photodetectors at telecommunication wavelength of 1550 nm

Cost-effective and high-responsivity photodetectors at a telecommunication wavelength of 1550 nm are highly desired in optical communication systems. Differing from conventional semiconductor-based photodetectors, several planar hot-electron photodetectors (HE PDs) that operate at 1550 nm have been reported. However, these devices were often comprised of many planar layers and exhibited relatively low responsivities. Herein, we propose a design of high-performance planar HE PDs consisting of five layers. Utilizing Fabry-Pérot (FP) resonance, the nearly perfect absorption of the proposed device can be achieved at the targeted wavelength of 1550 nm. Simulation results show that FP resonance orders are crucial for the optical absorption efficiencies, and then electrical responses. Analytical electrical calculations reveal that, benefiting from the strong absorption (>0.6) in the ultrathin Au layer with a thickness of 5 nm and the low Schottky barrier (0.5 eV) of Au-MoS₂ contact, predicted responsivity of proposed HE PD at zero-order FP resonance is up to ∼10 mA/W. Our design provides a new approach to realize low-cost and efficient photodetection for optical communication technology.

Design and optimization of mid-infrared hot electron detector based on Al/GaAs fishnet nanostructure for CO2 sensing

Hot electron detectors (HEDs) based on plasmon resonance can circumvent a semiconductor's bandgap limitation and have high sensitivity, suitable for infrared gas detectors. Unfortunately, there are few literature reports on research in the mid-infrared (MIR) region. Herein, we design and optimize a HED based on Al/GaAs fishnet nanostructure for MIR CO₂ sensing, and its optical-electrical properties are numerically studied. Surface plasmons not only achieve strong absorptance at CO₂ emission wavelength but also greatly improve the photoelectric responsivity over a plane structure detector (∼42times). By changing the thickness of the GaAs layer, the detection wavelength can also be actively adjusted, achieving a larger range of multi-gas detection. The effect of external voltage is also considered. This work highlights a potential engineering application value and offers a path toward more compact and efficient MIR gas detectors.

Enhancing Hot-Electron Photodetection of a TiO2/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure

Hot-electron photodetectors (HEPDs) are triggering a strong surge of interest in applications of image sensors and optics communication, since they can realize photoelectric responses when the incident photon energy is lower than the bandwidth of the semiconductor. In traditional HEPD systems, the metal layers are dressed with regular gratings, which can only excite plasmonic resonance over a narrow bandwidth, limiting the hot-electron photoelectric effect. To break this limitation, hybrid plasmonic nanostructures should be applied in HEPDs. Here, we propose a TiO2 based HEPD device incorporated with a hybrid plasmonic nanostructure, which consists of Au nanoparticles (Au NPs) and a conformal transparent Au film. With the assistance of the plasmonic resonances excited in this hybrid nanostructure, the spectrum of the photocurrent response is significantly broadened from the UV band to the visible and near-infrared (NIR) ranges. It is demonstrated that at the wavelengths of 660 nm and 850 nm, the photocurrent in the hybrid HEPD device is enhanced by 610% and 960%, respectively, compared with the counterparts without the addition of Au NPs. This work promotes the development of high performances HEPDs, offering an alternative strategy for realizing photodetection and image sensing in the NIR range.

Planar narrowband Tamm plasmon-based hot-electron photodetectors with double distributed Bragg reflectors

Hot-electron photodetectors (HE PDs) are attracting a great deal of attention from plasmonic community. Many efficient HE PDs with various plasmonic nanostructures have been demonstrated, but their preparations usually rely on complicated and costly fabrication techniques. Planar HE PDs are viewed as potential candidates of cost-effective and large-area applications, but they likely fail in the simultaneous achievement of outstanding optical absorption and hot-electron collection. To reconcile the contradiction between optical and electrical requirements, herein, we propose a planar HE PD based on optical Tamm plasmons (TPs) consisted of an ultrathin gold film (10 nm) sandwiched between two distributed Bragg reflectors (DBRs). Simulated results show that strong optical absorption (>0.95) in the ultrathin Au film is realized. Electrical calculations show that the predicted peak photo-responsivity of proposed HE PD with double DBRs is over two times larger than that of conventional single-DBR HE PD. Moreover, the planar dual-DBR HE PDs exhibit a narrowband photodetection functionality and sustained performance under oblique incidences. The optical nature associated with TP resonance is elaborated.

Phase change material based hot electron photodetection

We introduce a phase change material (PCM) based metal-dielectric-metal (MDM) cavity of gold (Au)-antimony trisulfide (Sb2S3)-Au as a hot electron photodetector (HEPD). Sb2S3 shows significant contrast in the bandgap (Eg) upon phase transition from the crystalline (Cry) (Eg = 2.01 eV) to the amorphous (Amp) (Eg = 1.72 eV) phase and forms the lowest Schottky barrier with Au in its Amp phase compared to conventional semiconductors such as Si, MoS2, and TiO2. The proposed HEPD is tunable for absorption and responsivity in the spectral range of 720 nm < λ < 1250 nm for the Cry phase and 604 nm < λ < 3542 nm for the Amp phase. The single resonance cavity and thus the sensitivity of the designed HEPD device can be changed to the double resonance cavity via the Cry to Amp phase transition. The maximum predicted responsivities for the single and double cavities are 20 and 24 mA W-1, respectively, at 950 nm and 1050 nm wavelengths which is the highest among all previously proposed planar HEPD devices. An anti-symmetric resonance mode at a higher wavelength is observed in the double cavity with 100% absorption. Owing to a high index of Sb2S3, an ultrathin ∼40 nm (∼λ/15) MDM cavity supports a critical light coupling to achieve high-efficiency HEPDs. Furthermore, a reversible and ultrafast (∼70 ns) Cry to Amp phase transition of Sb2S3 makes it suitable for many tunable photonics applications ranging from the visible to near-infrared region. Finally, we have introduced a novel scheme to switch between the single and double cavity by exploiting a semiconductor to metal phase transition in a PCM called VO2. The integration of VO2 as a coupling medium in the double cavity has increased the responsivity up to 50% upon phase transition to the metal phase. The proposed design can be used in optical filters, optical switches, ultrathin broad or narrow band solar absorbers, and other energy applications such as water splitting.

Polarization-Insensitive Waveguide Schottky Photodetectors Based on Mode Hybridization Effects in Asymmetric Plasmonic Waveguides

Two types of configurations are theoretically proposed to achieve high responsivity polarization-insensitive waveguide Schottky photodetectors, i.e., a dual-layer structure for 1.55 µm and a single-layer structure for 2 µm wavelength band. Mode hybridization effects between quasi-TM modes and sa_b¹ modes in plasmonic waveguides are first presented and further investigated under diverse metal types with different thicknesses in this work. By utilizing the mode hybridization effects between quasi-TE mode and aa_b⁰ mode, and also quasi-TM and sa_b¹ mode in our proposed hybrid plasmonic waveguide, light absorption enhancement can be achieved under both TE and TM incidence within ultrathin and short metal stripes, thus resulting in a considerable responsivity for Si-based sub-bandgap photodetection. For 1.55 µm wavelength, the Au-6 nm-thick device can achieve absorptance of 99.6%/87.6% and responsivity of 138 mA·W^-1/121.2 mA·W^-1 under TE/TM incidence. Meanwhile, the Au-5 nm-thick device can achieve absorptance of 98.4%/90.2% and responsivity of 89 mA·W^-1/81.7 mA·W^-1 under TE/TM incidence in 2 µm wavelength band. The ultra-compact polarization-insensitive waveguide Schottky photodetectors may have promising applications in large scale all-Si photonic integrated circuits for high-speed optical communication.

Ultranarrow-bandwidth planar hot electron photodetector based on coupled dual Tamm plasmons

Hot electron photodetectors based on a planar structure of metal-insulator /semiconductor-metal (MIM/MSM) have attracted much attention due to the easy and cheap fabrication process and the possibility of detecting light with energy lower than the semiconductor band gap. For this type of device, however, hot electron photocurrent is restricted by the trade-off between the light absorption and the internal quantum efficiency (IQE) since high absorption usually occurs within thick metals and the IQE in this case is usually low. The trade-off is circumvented in this paper by proposing a new type of hot electron photodetector based on planar MIM structure and coupled dual Tamm plasmons (TPs), which has a structure of one-dimensional photonic crystals (1DPCs)/Au/TiO₂/Au/1DPCs. The coupled modes of the dual TPs at the two 1DPCs/Au interfaces can lead to a high absorption of 98% in a 5 nm-thick Au layer. As a result, the responsivity of the conventional device with two Schottky junctions in series configuration reaches a high value of 9.78 mA/W at the wavelength of 800 nm. To further improve the device performance, devices with four Schottky junctions in parallel configuration are proposed to circumvent the hot electrons loss at the interface of the Au layer and the first TiO₂ layer of the 1DPCs. Correspondingly, the hot electrons photocurrent doubles and reaches a higher value of 21.87 mA/W. Moreover, the bandwidth of the responsivity is less than 0.4 nm, the narrowest one when compared with that for the hot electron photodetectors reported so far in the published papers.

Planar hot-electron photodetector utilizing high refractive index MoS2 in Fabry-Pérot perfect absorber

Hot electron photodetection (HEPD) excited by surface plasmon can circumvent bandgap limitations, opening pathways for additional energy harvesting. However, the costly and time-consuming lithography has long been a barrier for large-area and mass production of HEPD. In this paper, we proposed a planar and electron beam lithography-free hot electron photodetector based on the Fabry-Pérot (F-P) resonance composed of Au/MoS2/Au cavity. The hot electron photodetector has a nanoscale thickness, high spectral tunability, and multicolour photoresponse in the near-infrared region due to the increased round-trip phase shift by using high refractive index MoS2. We predict that the photoresponsivity can achieve up to 23.6 mA W-1 when double cavities are integrated with the F-P cavity. The proposed hot electron photodetector that has a nanoscale thickness and planar stacking is a perfect candidate for large-area and mass production of HEPD.