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Roy P, Pandey A. Engineering quantum dots for improved single photon emission statistics. J Chem Phys 2024; 160:204707. [PMID: 38785288 DOI: 10.1063/5.0205113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Accepted: 05/06/2024] [Indexed: 05/25/2024] Open
Abstract
High fidelity single photon sources are required for the implementation of quantum information processing and communications protocols. Although colloidal quantum dots (CQDs) are single photon sources, their efficacy is limited by their tendency to show finite multiphoton emission at higher excitation powers. Here, we show that wave function engineering of CQDs enables the realization of emitters with significantly improved single photon emission performance. We study the ZnS/CdSe/CdS system. It is shown that this system offers significantly improved probabilities of single photon emission. While conventional CQDs such as CdSe/CdS exhibit a g2(0) > 0.5 ± 0.02 at ⟨N⟩ = 2.17, ZnS/CdSe/CdS show a greatly improved g2(0) ≈ 0.04 ± 0.01. Improved single photon emission performance encourages the use of colloidal materials as quantum light sources in emerging quantum devices.
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Affiliation(s)
- Parna Roy
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Anshu Pandey
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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2
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Chen Y, Wang R, Kuang Y, Bian Y, Chen F, Shen H, Chi Z, Ran X, Guo L. Suppressed Auger recombination and enhanced emission of InP/ZnSe/ZnS quantum dots through inner shell manipulation. NANOSCALE 2023; 15:18920-18927. [PMID: 37975758 DOI: 10.1039/d3nr05010f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Understanding the influence of the inner shell on fluorescence blinking and exciton dynamics is essential to promote the optical performances of InP-based quantum dots (QDs). Here, the fluorescence blinking, exciton dynamics, second-order correlation function g2(τ), and ultrafast carrier dynamics of InP/ZnSe/ZnS QDs regulated by the inner ZnSe shell thickness varying from 2 to 7 monolayers (MLs) were systematically investigated. With an inner ZnSe shell thickness of 5 MLs, the photoluminescence quantum yield (PL QY) can reach 98% due to the suppressed blinking and increased probability of multiphoton emission. The exciton dynamics of InP/ZnSe/ZnS QDs with different inner shells indicates that two decay components of neural excitons and charged trions are competitive to affect the photon emission behavior. The probability density distributions of the ON and OFF state duration in the blinking traces demonstrate an effective manipulation of the inner ZnSe shell in the non-radiative processes via defect passivation. Accordingly, the radiative recombination dominates the exciton deactivation and the non-radiative Auger recombination rate is remarkably reduced, leading to a QY close to unity and a high PL stability for InP/ZnSe/ZnS QDs with 5 MLs of the ZnSe shell. These results provide insights into the photophysical mechanism of InP-based QDs and are significant for developing novel semiconductor PL core/shell QDs.
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Affiliation(s)
- Yaru Chen
- School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, 475004, China.
| | - Rixin Wang
- School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, 475004, China.
| | - Yanmin Kuang
- School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, 475004, China.
| | - Yangyang Bian
- Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, P. R. China
| | - Fei Chen
- Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, P. R. China
| | - Huaibin Shen
- Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, P. R. China
| | - Zhen Chi
- School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, 475004, China.
| | - Xia Ran
- School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, 475004, China.
| | - Lijun Guo
- School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, 475004, China.
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Li W, Kaminski Schierle GS, Lei B, Liu Y, Kaminski CF. Fluorescent Nanoparticles for Super-Resolution Imaging. Chem Rev 2022; 122:12495-12543. [PMID: 35759536 PMCID: PMC9373000 DOI: 10.1021/acs.chemrev.2c00050] [Citation(s) in RCA: 50] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
Super-resolution imaging techniques that overcome the diffraction limit of light have gained wide popularity for visualizing cellular structures with nanometric resolution. Following the pace of hardware developments, the availability of new fluorescent probes with superior properties is becoming ever more important. In this context, fluorescent nanoparticles (NPs) have attracted increasing attention as bright and photostable probes that address many shortcomings of traditional fluorescent probes. The use of NPs for super-resolution imaging is a recent development and this provides the focus for the current review. We give an overview of different super-resolution methods and discuss their demands on the properties of fluorescent NPs. We then review in detail the features, strengths, and weaknesses of each NP class to support these applications and provide examples from their utilization in various biological systems. Moreover, we provide an outlook on the future of the field and opportunities in material science for the development of probes for multiplexed subcellular imaging with nanometric resolution.
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Affiliation(s)
- Wei Li
- Key
Laboratory for Biobased Materials and Energy of Ministry of Education,
College of Materials and Energy, South China
Agricultural University, Guangzhou 510642, People’s Republic
of China,Department
of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, United Kingdom
| | | | - Bingfu Lei
- Key
Laboratory for Biobased Materials and Energy of Ministry of Education,
College of Materials and Energy, South China
Agricultural University, Guangzhou 510642, People’s Republic
of China,B. Lei.
| | - Yingliang Liu
- Key
Laboratory for Biobased Materials and Energy of Ministry of Education,
College of Materials and Energy, South China
Agricultural University, Guangzhou 510642, People’s Republic
of China
| | - Clemens F. Kaminski
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, United Kingdom,C. F. Kaminski.
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Park J, Won YH, Han Y, Kim HM, Jang E, Kim D. Tuning Hot Carrier Dynamics of InP/ZnSe/ZnS Quantum Dots by Shell Morphology Control. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105492. [PMID: 34889031 DOI: 10.1002/smll.202105492] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Revised: 11/05/2021] [Indexed: 06/13/2023]
Abstract
Isotropic InP/ZnSe/ZnS quantum dots (QDs) are prepared at a high reaction temperature, which facilitates ZnSe shell growth on random facets of the InP core. Fast crystal growth enables stacking faults elimination, which induces anisotropic growth, and as a result, improves the photoluminescence (PL) quantum yield by nearly 20%. Herein, the effect of the QD morphology on photophysical properties is investigated by observing the PL blinking and ultrafast charge carrier dynamics. It is found that hot hole trapping is considerably suppressed in isotropic InP QDs, indicating that the stacking faults in the anisotropic InP/ZnSe structures act as defects for luminescence. These results highlight the importance of understanding the correlation between QD shapes and hot carrier dynamics, and present a way to design highly luminescent QDs for further promising display applications.
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Affiliation(s)
- Jumi Park
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Yu-Ho Won
- Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Yongseok Han
- Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Hyun-Mi Kim
- Korea Electronics Technology Institute, 25 Saenari-ro, Bundang-gu, Seongnam-si, Gyeonggi-do, 13509, Republic of Korea
| | - Eunjoo Jang
- Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Dongho Kim
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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Wei Z, Pan Y, Hou G, Ran X, Chi Z, He Y, Kuang Y, Wang X, Liu R, Guo L. Excellent Multiphoton Excitation Fluorescence with Large Multiphoton Absorption Cross Sections of Arginine-Modified Gold Nanoclusters for Bioimaging. ACS APPLIED MATERIALS & INTERFACES 2022; 14:2452-2463. [PMID: 34986306 DOI: 10.1021/acsami.1c16324] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Fluorescent gold nanoclusters (Au NCs) with excellent one-photon and multiphoton properties have been demonstrated as promising candidates in many application fields. However, small multiphoton absorption (MPA) cross sections and weak multiphoton excitation (MPE) fluorescence impede their practical applications under near-infrared (NIR) excitation for biological imaging. Here, we report the regulated one-photon and multiphoton properties and mechanisms of arginine-stabilized 6-aza-2-thiothymine Au NCs (Arg/ATT-Au NCs) and the applications for MPE fluorescence imaging. The introduction of arginine into the capping layer of ATT-Au NCs significantly modifies the electronic structure, the absorption cross sections, and the relaxation dynamics of the lowest excited state, drastically reducing the nonradiative relaxation, suppressing the blinking, and greatly enhancing the fluorescence. Besides the improved one-photon properties, Arg/ATT-Au NCs demonstrate remarkable MPE fluorescence with a large MPA cross section. The two-photon (λex = 850 nm), three-photon (λex = 1400 nm), and four-photon (λex = 1700 nm) absorption cross sections have been determined to be 6.1 × 10-47 cm4 s1 photon-1, 1.5 × 10-78 cm6 s2 photon-2, and 5.5 × 10-108 cm8 s3 photon-3, respectively, much higher than those of conventional organic compounds and previously reported Au NCs. Moreover, Arg/ATT-Au NCs have been successfully applied in two-photon and three-photon excitation fluorescence imaging of living cells with NIR excitation. The manifold advantages of small size, high quantum yield, suppressed blinking, good photostability and cytocompatibility, large MPA cross sections, and excellent MPE fluorescence imaging performances make fluorescent Arg/ATT-Au NCs a great candidate of imaging probes with vis-NIR excitation.
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Affiliation(s)
- Zhongran Wei
- Academy for Advanced Interdisciplinary Studies, State Key Laboratory of Crop Stress Adaptation and Improvement, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yatao Pan
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Guangjing Hou
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Xia Ran
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Zhen Chi
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yulu He
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yanmin Kuang
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Xiaojuan Wang
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Renming Liu
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Lijun Guo
- Academy for Advanced Interdisciplinary Studies, State Key Laboratory of Crop Stress Adaptation and Improvement, School of Physics and Electronics, Henan University, Kaifeng 475004, China
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Park J, Won YH, Kim T, Jang E, Kim D. Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003542. [PMID: 32964676 DOI: 10.1002/smll.202003542] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Revised: 07/22/2020] [Indexed: 06/11/2023]
Abstract
Semiconductor quantum dots (QDs) are spotlighted as a key type of emissive material for the next generation of light-emitting diodes (LEDs). This work presents the investigation of the electrochemical charging effect on the absorption and emission of the InP/ZnSe/ZnS QDs with different mid-shell thicknesses. The excitonic peak is gradually bleached during electrochemical charging, which is caused by 1Se (or 1Sh ) state filling when the electron (or hole) is injected into the InP core. Additional charges also lead to photoluminescence (PL) intensity reduction, however, it is greatly mitigated as the mid-shell thickness increases. Various PL measurements reveal that the PL reduction under electrochemical charging is attributed to the acoustic phonon-assisted Auger recombination. Here, the Auger recombination in QDs with a thick mid-shell is reduced under the electrochemically charged condition, indicating that QDs with larger volume are more stable emitters in charge-injecting devices such as LEDs. Furthermore, the negative and positive trion Auger recombination rate constants are estimated, respectively, via electrochemical charging. The negative trion Auger rate constants decrease with an increase in the mid-shell thickness increases, whereas the positive trion Auger rate constants are not heavily reliant on the mid-shell thickness.
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Affiliation(s)
- Jumi Park
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Yu-Ho Won
- Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Taehyung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Eunjoo Jang
- Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea
| | - Dongho Kim
- Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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Structure-optical property correlation in CdTe/CdS core-shell quantum dots and their effects on Cu2+ sensing mechanisms. J Photochem Photobiol A Chem 2020. [DOI: 10.1016/j.jphotochem.2020.112709] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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8
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Liu X, Zhang Y, Liang A, Ding H, Gai H. Plasmonic resonance energy transfer from a Au nanosphere to quantum dots at a single particle level and its homogenous immunoassay. Chem Commun (Camb) 2019; 55:11442-11445. [DOI: 10.1039/c9cc05548g] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
PRET from a AuNS to a QD is discovered at a single particle level, and then is used to develop ultra-sensitive homogenous immunoassays.
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Affiliation(s)
- Xiaojun Liu
- School of Chemistry and Materials Science
- Jiangsu Normal University
- Xuzhou
- China
| | - Yusu Zhang
- School of Chemistry and Materials Science
- Jiangsu Normal University
- Xuzhou
- China
| | - Aiye Liang
- Department of Physical Sciences
- Charleston Southern University
- North Charleston
- USA
| | - Hongwei Ding
- School of Chemistry and Materials Science
- Jiangsu Normal University
- Xuzhou
- China
| | - Hongwei Gai
- School of Chemistry and Materials Science
- Jiangsu Normal University
- Xuzhou
- China
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