van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene

MXene Derivatives for Energy Storage and Conversions

Associated with the rapid development of 2D transition metal carbides, nitrides, and carbonitrides (MXenes), MXene derivatives have been recently exploited and exhibited unique physical/chemical properties, holding promising applications in the areas of energy storage and conversions. This review provides a comprehensive summarization of the latest research and progress on MXene derivatives, including termination-tailored MXenes, single-atom implanted MXenes, intercalated MXenes, van der Waals atomic layers, and non-van der Waals heterostructures. The intrinsic relationship between structure, properties, and corresponding applications for MXene derivatives are then emphasized. Finally, the essential challenges are addressed and perspectives for the MXene derivatives are also discussed.

Electrophoretic-deposited MXene titanium coatings in regulating bacteria and cell response for peri-implantitis

Background: Two-dimensional(2D)MXenes have continued to receive increasing interest from researchers due to their graphene-like properties, in addition to their versatile properties for applications in electronic devices, power generation, sensors, drug delivery, and biomedicine. However, their construction and biological properties as titanium coatings to prevent peri-implantitis are still unclear.

Materials and methods: In this work, few-layer Ti₃C₂T_x MXene coatings with different thicknesses at varied depositing voltages (30, 40, and 50 V) were constructed by anodic electrophoretic deposition without adding any electrolytic ions. In vitro cytocompatibility assay was performed on preosteoblasts (MC3T3-E1) cell lines after the characterization of the coating. Meanwhile, the antibacterial activity against bacteria which are closely related to peri-implantitis including Staphylococcus aureus (S. aureus) and its drug-resistant strain MRSA was further investigated.

Results: MXene-coated titanium models with different thicknesses were successfully assembled by analyzing the results of characterization. The compounding of Ti₃C₂T_x could significantly improve the initial adhesion and proliferation of MC3T3-E1 cells. Moreover, the coating can effectively inhibit the adhesion and cell activity of S. aureus and MRSA, and MRSA expressed greater restricting behavior than S. aureus. The ability to promote antibacterial activity is proportional to the content of Ti₃C₂T_x. Its antioxidant capacity to reduce ROS in the culture environment and bacterial cells was first revealed.

Conclusion: In summary, this work shows a new avenue for MXene-based nano-biomaterials under the clinical problem of multiple antibiotic resistance.

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.

Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti₃C₂ MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti₃C₂ MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti₃C₂ MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.