Raman intensity enhancement of molecules adsorbed onto HfS2 flakes up to 200 layers

Raman spectroscopy studies of black phosphorus

Black phosphorus has important applications in many fields such as optics, optoelectronics and thermals. Many of its excellent properties are related to its special anisotropy. In this work, we adopted Raman spectroscopy, which can obtain fast response optical signals without destroying the structure of the sample, to identify its crystal orientation and explore its thermal and SERS properties. We successfully distinguished the armchair and zigzag directions of black phosphorus by angle-resolved polarized Raman spectroscopy of A_g mode in a less studied orthogonal polarization configuration. Then we used temperature dependent Raman spectroscopy to study its thermal properties. It is found that the first order temperature coefficients of its three Raman vibration modes A_g¹, B_2g, and A_g² are -0.0133 cm^-1 K^-1, -0.0232 cm^-1 K^-1 and -0.0229 cm^-1 K^-1, respectively for the 3.2 nm sample. Furthermore, we studied the surface enhancement effect of black phosphorus with different thicknesses as SERS substrates. We found that few-layer black phosphorus has better enhancement effects and its limit of detection for MB and CV are both 10^-6M. The analytical enhancement factor of black phosphorus substrates on CV can achieve 1.2 × 10³ by calculation. These methods can be extended to other similar two-dimensional materials.

Sulfide-Based Photocatalysts Using Visible Light, with Special Focus on In2S3, SnS2 and ZnIn2S4

Sulfides are frequently used as photocatalysts, since they absorb visible light better than many oxides. They have the disadvantage of being more easily photocorroded. This occurs mostly in oxidizing conditions; therefore, they are commonly used instead in reduction processes, such as CO2 reduction to fuels or H2 production. Here a summary will be presented of a number of sulfides used in several photocatalytic processes; where appropriate, some recent reviews will be presented of their behaviour. Results obtained in recent years by our group using some octahedral sulfides will be shown, showing how to determine their wavelength-dependent photocatalytic activities, checking their mechanisms in some cases, and verifying how they can be modified to extend their wavelength range of activity. It will be shown here as well how using photocatalytic or photoelectrochemical setups, by combining some enzymes with these sulfides, allows achieving the photo-splitting of water into H2 and O2, thus constituting a scheme of artificial photosynthesis.

Molybdenum Oxide/Tungsten Oxide Nano-heterojunction with Improved Surface-Enhanced Raman Scattering Performance

By virtue of their high uniformity and stability, metal oxide-based surface-enhanced Raman spectroscopy (SERS) substrates have attracted enormous attention for molecular trace detection. However, strategies for further enhancing the SERS sensitivity are still desired. Herein, MoO_x/WO_x nano-heterojunctions are constructed by mixing MoO_x and WO_x together (MoO_x/WO_x hybrid) with diverse weight ratios. Using a 532 nm laser as the excitation source and R6G as the Raman reporter, it is shown that the Raman signal intensity (for the peak @ 1360 cm^-1) obtained on the optimal MoO_x/WO_x hybrid (MoO_x/WO_x = 1:1/3) is twice that observed on a pure MoO_x or WO_x substrate. Moreover, a limit of detection of 10^-8 M and an enhancement factor of 10⁸ are achieved. In the SERS enhancement mechanism investigation, it is revealed that MoO_x and WO_x form a staggered band structure. During the SERS measurement, electron-hole pairs are generated in the nano-heterojunction using the incident laser. They are then separated by the built-in potential with the electrons moving toward WO_x. The accumulated electrons on WO_x are further transferred to the R6G molecules through the coupling of orbitals. Consequently, the molecular polarizability is amplified, and SERS performance is enhanced. The abovementioned explanation is supported by the evidence that the contribution of the chemical enhancement mechanism in the optimal MoO_x/WO_x hybrid substrate is about 2.5 times or 5.9 times that in the pure WO_x or MoO_x substrate.

HfS2/MoTe2 vdW heterostructure: bandstructure and strain engineering based on first-principles calculation

In this study, a multilayered van der Waals (vdW) heterostructure, HfS2/MoTe2, was modeled and simulated using density functional theory (DFT). It was found that the multilayers (up to 7 layers) are typical indirect bandgap semiconductors with an indirect band gap varying from 0.35 eV to 0.51 eV. The maximum energy value of the valence band (VBM) and the minimum energy value of the conduction band (CBM) of the heterostructure were found to be dominated by the MoTe2 layer and the HfS2 layer, respectively, characterized as type-II band alignment, leading to potential photovoltaic applications. Optical spectra analysis also revealed that the materials have strong absorption coefficients in the visible and ultraviolet regions, which can be used in the detection of visible and ultraviolet light. Under an external strain perpendicular to the layer plane, the heterostructure exhibits a general transition from semiconductor to metal at a critical interlayer-distance of 2.54 Å. The carrier effective mass and optical properties of the heterostructures can also be modulated under external strain, indicating a good piezoelectric effect in the heterostructure.

Controlling the electronic and optical properties of HfS2 mono-layers via lanthanide substitutional doping: a DFT+U study

Two dimensional HfS₂ is a material with potential applications in the field of photo-catalysis and advanced solid state devices. Density functional theory with the Hubbard U parameter (DFT+U) calculations were carried out to investigate the structural, electronic and optical properties of lanthanide dopant atoms (LN = La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in the HfS₂ mono-layer. The calculated electronic band gap for a pristine HfS₂ mono-layer is 1.30 eV with a non-magnetic ground state. The dopant substitutional energies under both Hf-rich and S-rich conditions were evaluated, with the S-rich condition for the dopant atoms being negative. This implies that the incorporation of these LN dopant atoms in the HfS₂ is feasible and experimental realization possible. The introduction of LN dopant atoms in the HfS₂ mono-layer resulted in a significant change of the material properties. We found that the presence of LN dopant atoms in the HfS₂ mono-layer significantly alters its electronic ground states by introducing defect states as well as changes in the overall density of states profile resulting in a metallic ground state for the doped mono-layers. The doped mono-layers are all magnetic with the exception of La and Lu dopant atoms. We found that LN dopant atoms in the HfS₂ mono-layer influence the absorption and reflectivity spectra with the introduction of states in the lower frequency range (<1.30 eV). Furthermore, we showed that the applicability of doped HfS₂ mono-layers as photo-catalysts is very different compared with the pristine HfS₂ mono-layer.

Density functional theory with the Hubbard U parameter calculations were carried out to investigate the structural, electronic and optical properties of lanthanide dopant atoms in the HfS₂ mono-layer..