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Hou M, Zhou Z, Xu A, Xiao K, Li J, Qin D, Xu W, Hou L. Synthesis of Group II-VI Semiconductor Nanocrystals via Phosphine Free Method and Their Application in Solution Processed Photovoltaic Devices. NANOMATERIALS 2021; 11:nano11082071. [PMID: 34443902 PMCID: PMC8399757 DOI: 10.3390/nano11082071] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Revised: 08/10/2021] [Accepted: 08/11/2021] [Indexed: 11/16/2022]
Abstract
Solution-processed CdTe semiconductor nanocrystals (NCs) have exhibited astonishing potential in fabricating low-cost, low materials consumption and highly efficient photovoltaic devices. However, most of the conventional CdTe NCs reported are synthesized through high temperature microemulsion method with high toxic trioctylphosphine tellurite (TOP-Te) or tributylphosphine tellurite (TBP-Te) as tellurium precursor. These hazardous substances used in the fabrication process of CdTe NCs are drawing them back from further application. Herein, we report a phosphine-free method for synthesizing group II-VI semiconductor NCs with alkyl amine and alkyl acid as ligands. Based on various characterizations like UV-vis absorption (UV), transmission electron microscope (TEM), and X-ray diffraction (XRD), among others, the properties of the as-synthesized CdS, CdSe, and CdTe NCs are determined. High-quality semiconductor NCs with easily controlled size and morphology could be fabricated through this phosphine-free method. To further investigate its potential to industrial application, NCs solar cells with device configuration of ITO/ZnO/CdSe/CdTe/Au and ITO/ZnO/CdS/CdTe/Au are fabricated based on NCs synthesized by this method. By optimizing the device fabrication conditions, the champion device exhibited power conversion efficiency (PCE) of 2.28%. This research paves the way for industrial production of low-cost and environmentally friendly NCs photovoltaic devices.
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Affiliation(s)
- Mingyue Hou
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Zhaohua Zhou
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Ao Xu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Kening Xiao
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Jiakun Li
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Donghuan Qin
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
- Correspondence: (D.Q.); (W.X.); (L.H.)
| | - Wei Xu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
- Correspondence: (D.Q.); (W.X.); (L.H.)
| | - Lintao Hou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
- Correspondence: (D.Q.); (W.X.); (L.H.)
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Yin D, Dun C, Zhang H, Fu Z, Gao X, Wang X, Singh DJ, Carroll DL, Liu Y, Swihart MT. Binary and Ternary Colloidal Cu-Sn-Te Nanocrystals for Thermoelectric Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006729. [PMID: 33624942 DOI: 10.1002/smll.202006729] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2020] [Indexed: 06/12/2023]
Abstract
Recent advances in copper chalcogenide-based nanocrystals (NCs), copper sulfide, and copper selenide derived nanostructures, have drawn considerable attention. However, reports of crystal phase and shape engineering of binary or ternary copper telluride NCs remain rare. Here, a colloidal hot-injection approach for producing binary copper/tin telluride, and ternary copper tin telluride NCs with controllable compositions, crystal structures, and morphologies is reported. The crystal phase and growth behavior of these tellurides are systematically studied from both experimental and theoretical perspectives. The morphology of Cu1.29 Te NCs is modified from 1D nanorods with different aspect ratios to 2D nanosheets and 3D nanocubes, by controlling the preferential growth of specific crystalline facets. A controllable phase transition from Cu1.29 Te to Cu1.43 Te NCs is also demonstrated. The latter can be further converted into Cu2 SnTe3 and SnTe through Sn incorporation. Temperature dependent thermoelectric properties of metal (Cu and Sn) telluride nanostructure thin films are also studied, including Cu1.29 Te, Cu1.43 Te, Cu2 SnTe3 , and SnTe. Cu2 SnTe3 is a low carrier density semimetal with compensating electron and hole Fermi surface pockets. The engineering of crystal phase and morphology control of colloidal copper tin telluride NCs opens a path to explore and design new classes of copper telluride-based nanomaterials for thermoelectrics and other applications.
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Affiliation(s)
- Deqiang Yin
- Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200, USA
| | - Chaochao Dun
- Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC, 27109, USA
| | - Huisheng Zhang
- Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen, 041004, China
| | - Zheng Fu
- Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200, USA
| | - Xiang Gao
- Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200, USA
| | - Xianliang Wang
- Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200, USA
| | - David J Singh
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
- Department of Chemistry, University of Missouri, Columbia, MO, 65211, USA
| | - David L Carroll
- Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC, 27109, USA
| | - Yang Liu
- Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200, USA
| | - Mark T Swihart
- Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200, USA
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Qu Q, Liu B, Liang J, Li H, Wang J, Pan D, Sou IK. Expediting Hydrogen Evolution through Topological Surface States on Bi2Te3. ACS Catal 2020. [DOI: 10.1021/acscatal.9b04318] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Qing Qu
- Nano Science and Technology Program, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Bin Liu
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Jing Liang
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Hui Li
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Jiannong Wang
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Ding Pan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Hong KongChina
| | - Iam Keong Sou
- Nano Science and Technology Program, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
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