Air-stable lead-free hybrid perovskite employing self-powered photodetection with an electron/hole-conductor-free device geometry

Synthesis of different organic ammonium-based bismuth iodide perovskites for photodetection application

Bismuth-based perovskites are promising candidates for highly stable halide perovskites with low toxicity. Here, we report the synthesis of a series of bismuth iodide-based perovskites with different primary, secondary, and tertiary ammonium cations and study their structural, thermal, and optical properties, and the likelihood of photodetection. Interestingly, the variation of A-site organic ammonium cations, with different interlayer spacings between adjacent bismuth iodide monolayers, has exotic effects on the diffraction patterns and morphological structures of the perovskite crystals. Thermogravimetric analysis reveals the highest thermal stability of tertiary ammonium-based bismuth perovskite with a decomposition temperature of 385 °C. The branched primary ammonium-based photodetector has photo-responsivity roughly two and four times faster than that of secondary and tertiary ammonium-based devices, respectively. These findings provide insight into the importance of A-site cation engineering for structural modulation and tailoring the optoelectronic properties of bismuth-based perovskites for emerging optoelectronic devices.

MXene-Based Functional Platforms for Tumor Therapy

Recently, 2D transition metal carbide, nitride, and carbonitrides (MXenes) materials stand out in the field of tumor therapy, particularly in the construction of functional platforms for optimal antitumor therapy due to their high specific surface area, tunable performance, strong absorption of near-infrared light as well as preferable surface plasmon resonance effect. In this review, the progress of MXene-mediated antitumor therapy is summarized after appropriate modifications or integration procedures. The enhanced antitumor treatments directly performed by MXenes, the significant improving effect of MXenes on different antitumor therapies, as well as the MXene-mediated imaging-guided antitumor strategies are discussed in detail. Moreover, the existing challenges and future development directions of MXenes in tumor therapy are presented.

Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites

The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.

Facile Vertical Structure Broadband Photodetectors Enabled by Polyvinylpyrrolidone-Regulated Perovskite and Near-Infrared-Sensitive Lead Phthalocyanine

Broadband photodetectors have drawn tremendous attention in many application areas such as imaging, optical communication, and biochemical sensing. Perovskite is a star material with broad spectral absorption, but it is challenging to develop ultraviolet-visible-near-infrared (UV-Vis-NIR) ultra-broadband photodetectors due to the insufficient absorption in the near-infrared region. Moreover, it is difficult to construct a diode-type photodetector with a simple vertical structure based only on perovskite materials. Here, facile vertical structure broadband photodetectors were fabricated based on heterojunctions that were composed of perovskite MAPbI3 films with UV-Vis absorption spectrum and small organic molecule lead phthalocyanine (PbPc) with strong NIR optical absorption, resulting in UV-Vis-NIR ultra-broadband photodetection. The quality of MAPbI3 films was improved by introducing polyvinylpyrrolidone (PVP) modification, and subsequently, the corresponding MAPbI3/PbPc heterojunction-based photodetectors exhibited rectification characteristics and reduced reverse dark currents. When the PVP mass ratio is 1 wt%, the photodetector achieved the best performance that the spectral response uniformity factor was as high as 0.77, the photoresponsivity exceeded 10 A/W, and the photoresponse time was less than 0.5 ms under a light intensity of 0.013 mW/cm2 in the UV-Vis to NIR spectral range. These results are comparable or superior to those of some inorganic, organic, and perovskite photodetectors reported previously. This study would provide an effective strategy to construct high-performance perovskite photodetectors based on a simple vertical structure, paving the way to the realization of UV-Vis-NIR broadband photodetection.

Air-Stable Flexible Photodetector Based on MXene-Cs3Bi2I9 Microplate Schottky Junctions for Weak-Light Detection

Weak-light detection technology is widely used in various fields, including industry, high-energy physics, precision analysis, and reflection imaging. Metal-semiconductor-metal (MSM) photodetectors demonstrate high detectivity and high response speed and are one of the suitable structures for the preparation of weak-light detectors. However, traditional MSM photodetectors tend to exhibit high dark currents, which are not conducive to performance improvement. Here, a MXene-Cs₃Bi₂I₉-MXene weak-light detector is proposed. Based on the MXene-Cs₃Bi₂I₉ Schottky junctions, the dark current is reduced by 2 orders of magnitude and the responsivity is significantly improved compared with the traditional Cr/Au-Cs₃Bi₂I₉-Cr/Au MSM photodetector. The device demonstrates excellent photodetection capacity with a photoresponsivity of 6.45 A W^-1, a specific detectivity of 9.45 × 10¹¹ Jones, and a fast response speed of 0.27/2.32 ms. Especially, the device yielded a superior weak-light detectable limit of 10.66 nW cm^-2 and demonstrated excellent optical communication capability. Moreover, such a flexible device shows little degradation in photodetection performance after extreme bending for 4500 cycles, proving remarkable bending endurance and flexibility. The obtained results highlight the great potential of such Cs₃Bi₂I₉/MXene devices as a stable and environmentally friendly candidate for weak-light detection.

Geometry-asymmetric photodetectors from metal-semiconductor-metal van der Waals heterostructures

The functional diversities of two-dimensional (2D) material devices with simple architectures are ultimately limited by immature doping techniques. An alternative strategy is to use geometry-asymmetric metal-semiconductor-metal (GA-MSM) structures, which enable the basic functions of semiconductor junctions such as rectification and photovoltaics. Here, the mixed-dimensional van der Waals heterostructures (MDvdWHs) based on the separation and self-assembly of p-type SnS layered nanosheets (NSs) and n-type SnS₂ nanoparticles (NPs) are obtained using an aqueous phase exfoliation (APE) method. Due to the surface charge transfer doping, the carrier transport mechanism of devices based on MDvdWHs turns from thermionic field emission (TFE) to thermionic emission (TE), with the rectification factor (I_forward/I_reverse) changing from 0.7 to 3. To further illustrate the experimental results, the generic current transport models of GA-MSM devices have been established based on the TE and TFE mechanisms in which the TE and TFE mechanisms lead to opposite rectification phenomena in good agreement with the experimental results. The GA-MSM devices show a photovoltaic effect with a high responsivity of 35 A W^-1 and detectivity of 3.4 × 10¹¹ cm Hz^1/2 W^-1. This study not only provides a novel strategy to design photovoltaic devices with MDvdWHs, but more importantly, we have established fundamental models for the rectification behavior of GA-MSM devices.

Flexible Self-Powered Weak Light Detectors Based on ZnO/CsPbBr3/γ-CuI Heterojunctions

Halide perovskites (HPs) with marvelous optical and electrical properties are regarded as one of the competitive candidates for building next-generation photodetectors (PDs). However, combining their excellent properties with satisfactory long-term robustness is still challenging, ultimately limiting the practical applications of HP-based PDs. Herein, a high vacuum deposition system is employed to fabricate flexible self-powered PDs with a ZnO/CsPbBr₃/γ-CuI structure, which shows excellent stability and outstanding performance in weak light detection. Benefiting from the improved crystallinity and optimized device structure, a high detectivity of 8.1 × 10¹³ Jones and a rapid response speed (rise/decay time of 3.9/1.8 μs) are obtained in this self-powered device. Furthermore, the unencapsulated device exhibits intriguing environmental stability and mechanical flexibility. The photocurrent remains unchanged after 7000 s of continuous operation or 100 bending cycles. Furthermore, a 15 × 15 PD array is fabricated as an image sensor. A high contrast image of the target object can be obtained owing to the high sensitivity and uniformity of the self-powered PDs. These results demonstrate the feasibility and practicality of the ZnO/CsPbBr₃/γ-CuI heterojunction for applications in weak light detection and image formation.

Growth optimization of single-phase novel colloidal perovskite Cs3Bi2I9 nanocrystals and Cs3Bi2I9@SiO2 core-shell nanocomposites for bio-medical application

Lead-free halide perovskites have gained attention in recent years as viable materials with more distinctive characteristics than conventional semiconductor materials. Lead-free Cs₃Bi₂I₉ colloidal perovskite nanocrystal is chosen to eliminate its single-phase synthesis difficulty and implement the material in bioimaging applications. Nanostructured Cs₃Bi₂I₉ perovskite composites were coated with a thin coating of SiO₂ by an in situ tetraethyl orthosilicate/(3-aminopropyl)trimethoxysilane injection growth method to enhance their stability in aqueous medium and biocompatibility. Single-phase novel Cs₃Bi₂I₉ colloidal perovskite nanocrystal synthesis was successfully developed and optimized by adopting different synthetic conditions with varied experimental parameters. Characterization studies, including X-ray diffractometry and transmission electron microscopy, confirm the hexagonal structure of Cs₃Bi₂I₉ crystals and their cubic morphology. A broad emission peak in the red region was captured for pure and composite perovskite under different excitation wavelengths and was observed using a UV-visible spectrophotometer. Bioimaging of Cs₃Bi₂I₉@SiO₂ composites incorporated with L929 cells was conducted using an inverted fluorescence microscope under blue and green excitation. The results obtained from bioimaging studies indicated that the Cs₃Bi₂I₉@SiO₂ nanocomposites entered the cell field and exhibited an emission under excitation. The non-toxic behavior of the synthesized Cs₃Bi₂I₉@SiO₂ composites was demonstrated using MTT cytotoxicity assay in L929 fibroblast mouse cells, showing better cell compatibility.

Evaporation crystallization of zero-dimensional guanidinium bismuth iodide perovskite single crystal for X-ray detection

We synthesized zero-dimensional (0D) lead-free guanidinium bismuth iodide ((Gua)3Bi2I9) single crystals via an antisolvent-assisted evaporation crystallization method, and exploited their potential X-ray detection merits.

A lead-free halide hybrid perovskite (TMHD)BiCl5 for ultraviolet photodetection

Lead halide hybrid perovskites with a wide bandgap (e.g., CH3NH3PbCl3) have gained tremendous attention in the field of ultraviolet (UV) photodetection due to their brilliant optoelectronic activity.

Sensing of ultraviolet light: a transition from conventional to self-powered photodetector

Clouds in the sky pass almost 80% of ultraviolet (UV) radiation to the earth's surface, which has a significant impact on humankind. Conventional UV photodetectors (PDs) require an external battery, which not only increases the device size but also has a limited life span and maintenance costs can be prohibitively expensive. An alternative and more technically-sound solution would be the use of self-powered UV PDs that can operate independently, eliminating the need for an external source. Although many exciting studies have been done and state-of-the-art research is underway to successfully fabricate self-powered UV PDs, periodic reviews on this topic are deemed essential so that the technology's readiness can be properly evaluated and critical challenges can be addressed in a timely manner. In this article, the key issues and most exciting developments made in recent years on built-in electric field assisted self-powered UV PDs based on p-n homojunctions, p-n heterojunctions, and Schottky junctions followed by energy harvester integrated UV PDs are extensively reviewed. Finally, a summary and comparison of different types of self-powered UV PDs as well as future challenges that need to be addressed are discussed. This review sets a foundation providing essential insights into the present status of self-powered UV PDs with which researchers can engage and deal with the major challenges.

Ultrafast, Self-Powered, and Charge-Transport-Layer-Free Ultraviolet Photodetectors Based on Sequentially Vacuum-Evaporated Lead-Free Cs2AgBiBr6 Thin Films

Researchers have focused on perovskite-based ultraviolet photodetectors due to their significance in fundamental scientific and practical applications. However, toxicity and instability hold back their mass production and commercialization. The lead-free Cs₂AgBiBr₆ double perovskite, promised to be an alternative, is fabricated mostly by spin coating, which restricts the practical application in high-resolution image sensors. Herein, we demonstrate a sequential vacuum evaporation method for the fabrication of the Cs₂AgBiBr₆ film. A self-powered ultraviolet photodetector based on the evaporated Cs₂AgBiBr₆ thin film is further constructed without any carrier-transport layers, for the first time. The best-performing device has a high on/off ratio of 6.6 × 10³, and its response time is fast, less than 6.13 μs. Moreover, the as-prepared devices exhibit salient stability under harsh operational conditions (continuous illumination, high temperature, and humidity). In addition, the pixelated image sensor containing a 25 × 25 Cs₂AgBiBr₆ photodetector array achieves a proof-of-concept special pattern recognition. Our work paves the way for new-generation ultraviolet image sensors composed of environmentally friendly and high-performance perovskite photodetector arrays.

Multispectral photodetectors based on 2D material/Cs3Bi2I9heterostructures with high detectivity

Group VA metal halide-based perovskites have emerged as intensively explored Pb-free perovskites, owing to their excellent environmental stability and low-toxicity. However, the relatively low carrier mobility and high photocarrier recombination rates restrict their applications in photodetectors. One promising approach to achieve higher performance is to integrate these Pb-free perovskites with 2D materials to form heterostructures. Here, we report on the high sensitivity photodetectors based on MoS₂/Cs₃Bi₂I₉and graphene/Cs₃Bi₂I₉heterostructures for multispectral regions. The heterostructures combine the high carrier mobility of 2D materials with superior light-harvesting properties of perovskites, as well as the effective built-in electric filed at the junction area, leading to efficient photocarrier separation and extraction. The specific detectivity of MoS₂/Cs₃Bi₂I₉device reaches 1.15 × 10¹³Jones for the detection of ultraviolet (UV) light of 325 nm, which is four orders of magnitude higher than UV detectors built on GaN. As a result of the efficient dark current suppression, the specific detectivity of graphene/Cs₃Bi₂I₉photodetector can be promoted to 5.24 × 10¹¹Jones, 1.33 × 10¹¹Jones, and 1.12 × 10¹¹Jones for the detection of 325 nm, 447 nm, and 532 nm light, respectively.

Lead-Free Perovskite Photodetectors: Progress, Challenges, and Opportunities

State-of-the-art photodetectors which apply hybrid perovskite materials have emerged as powerful candidates for next-generation light sensing. Among them, lead-based ones are the most popular beyond doubt on account of their unique and superior optoelectronic properties. Nevertheless, trade-off toward commercialization exists between nontoxicity and high performance, with the poor stability of lead-based perovskites, indicating that it is indispensable to substitute lead with nontoxic element meanwhile bringing about a comparable figure of merit of photodetectors and relatively long-term stability. Herein, recent advances in lead-free perovskite photodetectors are reviewed, analyzing the principle while designing new materials and highlighting some remarkable progress, which are comparable, even superior, to lead-based photodetectors. Furthermore, their potential strategy in optical communication, image sensing, narrowband photodetection, etc., is examined and a perspective on developing new materials and photodetectors with superior properties for more practical applications is provided.

Self-Assembled Organic Cations-Assisted Band-Edge Tailoring in Bismuth-Based Perovskites for Enhanced Visible Light Absorption and Photoconductivity

Bismuth-based zero-dimensional perovskites garner high research interest because of their advantages, such as excellent moisture stability and lower toxicity in comparison to lead-based congeners. However, the wide optical bandgap (>2 eV) and poor photoconductivity of these materials are the bottlenecks for their optoelectronic applications. Herein, we report a combined experimental and theoretical study of the structural features and optoelectronic properties of two novel and stable zero-dimensional bismuth perovskites: (biphenyl bis(methylammonium))1.5BiI6·2H2O (BPBI) and (naphthalene diimide bis(ethylammonium))1.5BiI6·2H2O (NDBI). NDBI features a remarkably narrower bandgap (1.82 eV) than BPBI (2.06 eV) because of the significant orbital contribution of self-assembled naphthalene diimide cations at the band edges of NDBI. Further, the FP-TRMC analysis revealed that the photoconductivity of NDBI is about 3.7-fold greater than that of BPBI. DFT calculations showed that the enhanced photoconductivity in NDBI arises from its type-IIa band alignment, whereas type-Ib alignment was seen in BPBI.

Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives

Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb²⁺, including AB(ii)X₃, A₃B(iii)₂X₉, A₂B(i)B(iii)'X₆, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.

Constructing Caesium-Based Lead-Free Perovskite Photodetector Enabling Self-Powered Operation with Extended Spectral Response

Since the discovery of the state-of-the-art hybrid halide perovskites, their application in optoelectronic systems has drawn considerable attention. However, the toxicity from lead (Pb) and the volatility induced by organic constituents hinder their future large-scale market development. Herein, a fully inorganic Pb-free halide perovskite based on robust Cs₃Bi₂I₉ is synthesized and realized its potential in photodetector application. The material property investigation suggests the good crystalline quality with strong absorption coefficient suitable for photodetection. An interesting feature based on the extended absorption is obtained, which is the characteristic of a weak phonon-assisted transition. Additionally, the morphological features display the beautifully grown micrometer-sized crystals of Cs₃Bi₂I₉. The fabricated photodetector demonstrated the self-powered operation (zero-bias state) with a very low dark current of 0.46 pA. Profiting from this, an improved photosensitivity of 1.4 × 10⁴ is achieved. Moreover, along with self-powered photodetection, the photodetector exhibits a broad spectral response (450-950 nm), high detectivity (1.2 × 10¹⁰/1.6 × 10¹² Jones), high responsivity (0.59 μA W^-1/3.8 mA W^-1), and fast response speed (ms) under a weak optical signal of 0.1 mW cm^-2 with a larger active area of 0.25 cm². The photodetector shows high photostability which was well retained for almost 2000 repetitive cycles without degradation. More strikingly, based on the core stability of the perovskite film, an excellent long-term stability of 3 months (90 days) is achieved for the photodetector even after exposure to moist air (75% relative humidity). This study thus highlights one of the few Pb-free all-inorganic perovskite photodetectors employing a simple device architecture with a larger active area that outshines by showing efficient and comparable performance under the self-powered mode under low light conditions.

Anisotropic Photoconductivity and Long-Lived Charge Carriers in Bismuth-Based One-Dimensional Perovskite with Type-IIa Band Alignment

Bismuth-based perovskites are attracting intense scientific interest due to low toxicity and excellent moisture stability compared to lead-based analogues. However, high exciton binding energy, poor charge carrier separation, and transport efficiencies lower their optoelectronic performances. To address these issues, we have integrated an electronically active organic cation, naphthalimide ethylammonium, between the [BiI₅^2-]_n chains via crystal engineering to form a novel perovskite-like material (naphthalimide ethylammonium)₂BiI₅ (NBI). Single crystal analysis revealed a one-dimensional quantum-well structure for NBI in which inter-inorganic well electronic coupling is screened by organic layers. It exhibited anisotropic photoconductivity and long-lived charge carriers with milliseconds lifetime, which is higher than that of CH₃NH₃PbI₃. Density functional theory calculations confirmed type-IIa band alignment between organic cations and inorganic chains, allowing the former to electronically contribute to the overall charge transport properties of the material.

Self-Powered and Broadband Lead-Free Inorganic Perovskite Photodetector with High Stability

Metal halide perovskite materials have opened up a great opportunity for high-performance optoelectronic devices owing to their extraordinary optoelectronic properties. More than lead halide ones, stable and nontoxic bismuth halide perovskites exhibit more promise in their future commercialization. In this work, we developed for the first time photodetectors based on full-inorganic Cs₃Bi₂I_9-xBr_x perovskites and modulate their performance by varying x in the composition systematically. Among those self-powered photodetectors, those based on Cs₃Bi₂I₆Br₃ shows the best performance with excellent photosensitivity of 4.1 × 10⁴ at zero bias as well as the responsivity and detectivity reaching 15 mA/W and 4.6 × 10¹¹ Jones, respectively. More strikingly, the full-inorganic perovskite photodetectors exhibit excellent stability in the ambient environment and can maintain over 96% of the initial value after 100 days owing to the high stability of the core perovskite film. The paper definitely paves an alternative and promising strategy for the design of future commercial photodetectors that are self-powered, stable, nontoxic, etc.

An asymmetric contact-induced self-powered 2D In2S3 photodetector towards high-sensitivity and fast-response

Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieved a self-powered operation by adopting a geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with an asymmetric contact is combined with the traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA W-1), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.

A two-dimensional bilayered Dion–Jacobson-type perovskite hybrid with a narrow bandgap for broadband photodetection

A unique 2D bilayered Dion–Jacobson type perovskite hybrid semiconductor shows broadband photodetection.

Efficient and Stable Perovskite Photodetectors Based on Thiocyanate-Assisted Film Formation

Thiocyanate-based perovskite (SCN-PVSK) photodetectors have been fabricated by introducing lead thiocyanate precursor. Incorporating SCN groups into CH₃NH₃PbI₃ can significantly improve the device stability in air. Compared with pure CH₃NH₃PbI₃ films, SCN-PVSK films have larger grain size and reduced trap states. The perovskite layers can be prepared by a simple solution method in air. Solvent effects on the crystallization of SCN-PVSK films have also been investigated. It is found that highly uniform, pinhole-free perovskite films can be obtained utilizing the N,N-dimethylformamide (DMF) solution of Pb(SCN)₂. The SCN-PVSK based photodetectors performed a high responsivity of 12.3 A/W and a decent detectivity over 1.3 × 10¹³ Jones. More important, the SCN-PVSK based two-terminal photodetectors, without encapsulation, have shown great stability with 92% of the initial photocurrent being retained after storage in air (relative humidity >50%) for 10 days, whereas the value is only 10% for pure CH₃NH₃PbI₃ devices tested under the same conditions.