Direct evidence of 2H hexagonal Si in Si nanowires

Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface

Si-based emitters have been of great interest as an ideal light source for monolithic optical-electronic integrated circuits (MOEICs) on Si substrates. However, the general Si-based material is a diamond structure of cubic lattice with an indirect band gap, which cannot emit light efficiently. Here, hexagonal-Ge (H-Ge) nanostructures within a light-emitting metasurface consisting of a cubic-SiGe nanodisk array are reported. The H-Ge nanostructure is naturally formed within the cubic-Ge epitaxially grown on Si (001) substrates due to the strain-induced nanoscale crystal structure transformation assisted by far-from-equilibrium growth conditions. The direct-bandgap features of H-Ge nanostructures are observed and discussed, including a rather strong and linearly power-dependent photoluminescence (PL) peak around 1562 nm at room temperature and temperature-insensitive PL spectrum near room temperature. Given the direct-bandgap nature, the heterostructure of H-Ge/C-Ge, and the compatibility with the sophisticated Si technology, the H-Ge nanostructure has great potential for innovative light sources and other functional devices, particularly in Si-based MOEICs.

Recent Progress on Phase Engineering of Nanomaterials

As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e., the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of μm. Samples with sulfur and selenium showed high conductivity compared to the undoped material.

Impact of synthesis conditions on the morphology and crystal structure of tungsten nitride nanomaterials

Nanocrystalline tungsten nitride (WN_x) aggregates and nanosheets are synthesized with a new alkylamine-based synthesis strategy for potential applications in nanoelectronics and catalysis. These applications preferentially require crystalline materials with controlled morphology, which has been rarely demonstrated for WN_x nanomaterials in the past. In the synthesis approach presented in this work, the morphology of nanoscale WN_x is controlled by long-chained amines that form lyotropic or lamellar phases depending on the surfactant concentration. The structural and chemical properties of the WN_x nanomaterials are studied in detail using different electron microscopic techniques in combination with electron spectroscopic analyses. Material synthesis and sample preparation for transmission electron microscopy (TEM) were performed in an argon atmosphere (Schlenk line and glovebox). The samples were inserted into the electron microscope via an air-tight TEM transfer holder to protect the material from hydrolysis and oxidation. From the lyotropic phase nanocrystalline WN_x aggregates were obtained, which consist of 2.4 ± 0.8 nm small crystallites of the cubic WN_x phase with a composition of WN_0.7. The lamellar phase with a higher surfactant concentration yields WN_x nanosheets with lateral dimensions up to 500 nm and a mean thickness of 2.1 ± 1.1 nm. The nanosheets are N rich with a composition WN_1.7–3.7 and occur in the hexagonal crystal structure. The nanosheets are often stacked on top of one another with frequent rotations of 4–6° around the hexagonal c axis, thereby forming commensurate interface structures between nanosheets. High stacking-fault densities and signs of nanotwins can be repeatedly observed in WN_x nanosheets.

Nanocrystalline tungsten nitride (WN_x) aggregates and nanosheets are synthesized with a new alkylamine-based synthesis strategy for potential applications in nanoelectronics and catalysis.

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. The goal¹ of achieving efficient light emission from group-IV materials in silicon technology has been elusive for decades^2-6. Here we demonstrate efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys. We measure a sub-nanosecond, temperature-insensitive radiative recombination lifetime and observe an emission yield similar to that of direct-bandgap group-III-V semiconductors. Moreover, we demonstrate that, by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned over a broad range, while preserving the direct bandgap. Our experimental findings are in excellent quantitative agreement with ab initio theory. Hexagonal SiGe embodies an ideal material system in which to combine electronic and optoelectronic functionalities on a single chip, opening the way towards integrated device concepts and information-processing technologies.

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Results from ab initio calculations for singly- and co- doped Si nanocrystals and nanowires are presented.

Phonon transport across crystal-phase interfaces and twin boundaries in semiconducting nanowires

We combine state-of-the-art Green's-function methods and nonequilibrium molecular dynamics calculations to study phonon transport across the unconventional interfaces that make up crystal-phase and twinning superlattices in nanowires. We focus on two of their most paradigmatic building blocks: cubic (diamond/zinc blende) and hexagonal (lonsdaleite/wurtzite) polytypes of the same group-IV or III-V material. Specifically, we consider InP, GaP and Si, and both the twin boundaries between rotated cubic segments and the crystal-phase boundaries between different phases. We reveal the atomic-scale mechanisms that give rise to phonon scattering in these interfaces, quantify their thermal boundary resistance and illustrate the failure of common phenomenological models in predicting those features. In particular, we show that twin boundaries have a small but finite interface thermal resistance that can only be understood in terms of a fully atomistic picture.