Liang Y. Ge-doped ZnO nanowire arrays as cold field emitters with excellent performance.
NANOTECHNOLOGY 2019;
30:375603. [PMID:
31185459 DOI:
10.1088/1361-6528/ab28ca]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Elemental doping is an efficient strategy to modify the electronic and optoelectronic properties of semiconductor materials. In this work, a high-quality Ge-doped tapered ZnO nanowire array was prepared via a simple chemical vapor deposition approach. The I-V and light emission behaviors were investigated based on a single nanowire with good electrical conductivity. The Kelvin probe force microscopy and ultraviolet photoelectron spectroscopy characterizations indicate that the doped nanowires possess a largely reduced work function relative to that of the pure ZnO nanostructures. These advantages allow Ge-doped ZnO nanowire arrays to deliver excellent field emission performance, including low turn-on and threshold fields, high emission current and long-term stability.
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