Sun Q, Wang S, Devakumar B, Li B, Sun L, Liang J, Huang X. Synthesis and photoluminescence properties of novel far-red-emitting BaLaMgNbO6:Mn4+ phosphors for plant growth LEDs.
RSC Adv 2018;
8:28538-28545. [PMID:
35548391 PMCID:
PMC9084396 DOI:
10.1039/c8ra06048g]
[Citation(s) in RCA: 75] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2018] [Accepted: 08/03/2018] [Indexed: 11/21/2022] Open
Abstract
A series of far-red-emitting BaLaMgNbO6:Mn4+ (BLMN:Mn4+) phosphors were successfully synthesized by a high-temperature solid-state reaction method. Crystal structure and luminescence properties of the obtained samples were systematically investigated. The emission spectra exhibited a strong narrow far-red emission band peaking at 700 nm with a full width at half-maximum (FWHM) of ∼36 nm under 360 nm excitation. The optimal Mn4+ concentration was about 0.4 mol%. The internal quantum efficiency and CIE chromaticity coordinates of the BLMN:0.4% Mn4+ phosphor were 52% and (0.7222, 0.2777), respectively. In addition, the luminescence mechanism has been analyzed using a Tanabe–Sugano energy level diagram. Finally, by using a 365 nm near-ultraviolet InGaN chip combined with BLMN:0.4% Mn4+ phosphors, a far-red LED device was fabricated.
Mn4+-activated BaLaMgNbO6 far-red emitting double-perovskite phosphors with internal quantum efficiency up to 52% were developed for potential application in plant growth LEDs.![]()
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