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Das U, Das D, Paul B, Rabha T, Pattanayak S, Kanjilal A, Bhattacharjee S, Sarkar P, Roy A. Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI 3-xCl x Perovskite for RRAM Application. ACS APPLIED MATERIALS & INTERFACES 2020; 12:41718-41727. [PMID: 32830960 DOI: 10.1021/acsami.0c10123] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and incorporated as a switching media in the Ag/RbPbI3-xClx/ITO structure, since pure RbPbI3 is nonswitchable. Five compositions of the RbPbI3-xClx (x = 0, 0.3, 0.6, 0.9, and 1.2) films are fabricated, and the conductivity was found to be increasing upon increase in Cl concentration, as revealed by dielectric and I-V measurements. The device with a 20% chloride-substituted film exhibits a higher on/off ratio, extended endurance, long retention, and high-density storage ability. Finally, a plausible explanation of the switching mechanism from iodine vacancy-mediated growth of conducting filaments (CFs) is provided using conductive atomic force microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate resistive switching behavior.
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Affiliation(s)
- Ujjal Das
- Department of Physics, National Institute of Technology Silchar, Silchar 788010, India
| | - Dip Das
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201 314, India
| | - Bappi Paul
- Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Tridip Rabha
- Department of Physics, National Institute of Technology Silchar, Silchar 788010, India
| | - Soumya Pattanayak
- Department of Electronics and Instrumentation Engineering, National Institute of Technology Silchar, Silchar 788010, India
| | - Aloke Kanjilal
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201 314, India
| | - Snigdha Bhattacharjee
- Department of Physics, National Institute of Technology Silchar, Silchar 788010, India
| | - Pranab Sarkar
- Department of Applied Science and Humanities, Assam University, Silchar 788011, India
| | - Asim Roy
- Department of Physics, National Institute of Technology Silchar, Silchar 788010, India
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