AgGaGeSe4: An Infrared Nonlinear Quaternary Selenide with Good Performance

The symmetry of crystals is an extremely important property of crystals. Crystals can be divided into centrosymmetric and non-centrosymmetric crystals. In this paper, an infrared (IR) nonlinear optical (NLO) material AgGaGeSe4 was synthesized. The related performance analysis, nonlinear optical properties, and first-principle calculation of AgGaGeSe4 were also introduced in detail. In the AgGaGeSe4 structure, Ge4+ was replaced with Ga3+ and produced the same number of vacancies at the Ag+ position. The low content of Ge doping kept the original chalcopyrite structure and improved its optical properties such as the band gap. The UV-Vis diffuse reflection spectrum shows that the experimental energy band gap of AgGaGeSe4 is 2.27 eV, which is 0.48 eV larger than that of AgGaSe2 (1.79 eV). From the perspective of charge-transfer engineering strategy, the introduction of Group IV Ge elements into the crystal structure of AgGaSe2 effectively improves its band gap. The second harmonic generation (SHG) effect of AgGaGeSe4 is similar to that of AgGaSe2, and at 1064 nm wavelength, the birefringence of AgGaGeSe4 is 0.03, which is greater than that of AgGaSe2 (∆n = 0.02). The results show that AgGaGeSe4 possessed better optical properties than AgGaSe2, and can been broadly applied as a good infrared NLO material.

Ba6(CuxZy)Sn4S16 (Z = Mg, Mn, Zn, Cd, In, Bi, Sn): High Chemical Flexibility Resulting in Good Nonlinear-Optical Properties

Seven acentric sulfides Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) were grown by a high-temperature salt flux method. The crystal structures of the Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) compounds were determined by single-crystal X-ray diffraction with the aid of solid-state NMR spectroscopy. The Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi) compounds are isostructural and crystallize in the Ba₆Ag₄Sn₄S₁₆ structure type. The Sn-containing compound exhibits high structural similarity to Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi) with the presence of an interstitial atomic position partially occupied by Sn atoms. The chemical bonding characteristics of Ba₆(Cu_2.9Sn_0.4)Sn₄S₁₆ were understood with electron localization function calculations coupled with crystal orbital Hamilton population calculations. The Ba-S and Cu-S interactions are dominantly ionic, but the Sn-S interactions consist of strong covalent bonding characteristics in Ba₆(Cu_2.9Sn_0.4)Sn₄S₁₆. The monovalent Cu atoms, mixed with certain metals with various oxidation states, significantly shift the optical properties of the Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi) compounds. This results in a good balance between the second-harmonic-generation (SHG) response and laser damage threshold (LDT). Ba₆(Cu_1.9Zn_1.1)Sn₄S₁₆ possesses a high SHG response and a high LDT of 2.8 × AGS and 3 × AGS, respectively. A density functional theory calculation revealed that CuS₄ and SnS₄ tetrahedra significantly contribute to the SHG response in Ba₆(Cu₂Mg)Sn₄S₁₆, which also confirmed that CuS₄ tetrahedra are crucial for the stability and optical properties of the Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) compounds revealed by electronic structure analysis.

Halogen-Ion-Induced Structural Phase Transition Giving a Polymorph of HgBr2 with Balanced Nonlinear Optical Properties

The key to developing new infrared nonlinear optical (NLO) materials is balancing second-order nonlinear optical effects and the laser-induced damage threshold (LIDT). In this paper, a new polymorph of HgBr₂ (P2₁2₁2₁) was synthesized by a "halogen-ion-induced effect" in solution, which features a crystal structure different from that of the original phase (Cmc2₁) and exhibits better NLO properties. Its powders show a strong SHG effect (9 × KDP), a high LIDT (30 × AgGaS₂), a wide infrared transparent range, and stability in air, making it a prospective NLO material in the IR region. In addition, the above excellent NLO characteristics are well illustrated in DFT theoretical calculations. More importantly, experimental results show that the new infrared NLO polymorph with excellent comprehensive properties could be controllably obtained by using the halogen-ion-induced strategy.

Applying band gap engineering to tune the linear optical and nonlinear optical properties of noncentrosymmetric chalcogenides La4Ge3SexS12−x (x = 0, 2, 4, 6, 8, 10)

Band gap engineering was applied to tune the properties of a phase-matchable La4Ge3S12 by replacing S with Se, which uncovered five new compounds: La4Ge3SexS12−x (x = 2, 4, 6, 8, 10).

A review of the AI2BIICIVDVI4 family as infrared nonlinear optical materials: the effect of each site on the structure and optical properties

The AI2B^IIC^IVDVI4 family as promising infrared NLO materials is summarized. The influence of each site substitutions on the structures and properties is systematically analyzed.