1
|
Wang J, Wu M, Zhen W, Li T, Li Y, Zhu X, Ning W, Tian M. Superconductivity in single-crystalline ZrTe 3-x ( x ≤ 0.5) nanoplates. NANOSCALE ADVANCES 2023; 5:479-484. [PMID: 36756273 PMCID: PMC9846514 DOI: 10.1039/d2na00628f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 11/17/2022] [Indexed: 06/18/2023]
Abstract
Superconductivity with an unusual filamented character below 2 K has been reported in bulk ZrTe3 crystals, a well-known charge density wave (CDW) material, but still lacks in its nanostructures. Here, we systemically investigated the transport properties of controllable chemical vapor transport synthesized ZrTe3-x nanoplates. Intriguingly, superconducting behavior is found at T c = 3.4 K and can be understood by the suppression of CDW due to the atomic disorder formed by Te vacancies. Magnetic field and angle dependent upper critical field revealed that the superconductivity in the nanoplates exhibits a large anisotropy and two-dimensional character. This two-dimensional nature of superconductivity was further satisfactorily described using the Berezinsky-Kosterlitz-Thouless transition. Our results not only demonstrate the critical role of Te vacancies for superconductivity in ZrTe3-x nanoplates, but also provide a promising platform to explore the exotic physics in the nanostructure devices.
Collapse
Affiliation(s)
- Jie Wang
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Physics, University of Science and Technology of China Hefei 230026 P. R. China
| | - Min Wu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Weili Zhen
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Physics, University of Science and Technology of China Hefei 230026 P. R. China
| | - Tian Li
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Yun Li
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University Clayton Victoria 3800 Australia
| | - Xiangde Zhu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Wei Ning
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Mingliang Tian
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Physics, School of Physics and Materials Science, Anhui University Hefei 230601 P. R. China
| |
Collapse
|
2
|
Chen M, Li L, Xu M, Li W, Zheng L, Wang X. Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides. RESEARCH (WASHINGTON, D.C.) 2023; 6:0066. [PMID: 36930809 PMCID: PMC10013805 DOI: 10.34133/research.0066] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 01/12/2023] [Indexed: 01/21/2023]
Abstract
The transition metal trichalcogenides (TMTCs) are quasi-one-dimensional (1D) MX3-type van der Waals layered semiconductors, where M is a transition metal element of groups IV and V, and X indicates chalcogen element. Due to the unique quasi-1D crystalline structures, they possess several novel electrical properties such as variable bandgaps, charge density waves, and superconductivity, and highly anisotropic optical, thermoelectric, and magnetic properties. The study of TMTCs plays an essential role in the 1D quantum materials field, enabling new opportunities in the material research dimension. Currently, tremendous progress in both materials and solid-state devices has been made, demonstrating promising applications in the realization of nanoelectronic devices. This review provides a comprehensive overview to survey the state of the art in materials, devices, and applications based on TMTCs. Firstly, the symbolic structure, current primary synthesis methods, and physical properties of TMTCs have been discussed. Secondly, examples of TMTC applications in various fields are presented, such as photodetectors, energy storage devices, catalysts, and sensors. Finally, we give an overview of the opportunities and future perspectives for the research of TMTCs, as well as the challenges in both basic research and practical applications.
Collapse
Affiliation(s)
- Mengdi Chen
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an710072, China.,Key Laboratory of Flexible Electronics of Zhejiang Provience, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo 315103, China
| |
Collapse
|
3
|
Dhingra A, Lipatov A, Loes MJ, Abourahma J, Pink M, Sinitskii A, Dowben PA. Effect of Au/HfS 3 interfacial interactions on properties of HfS 3-based devices. Phys Chem Chem Phys 2022; 24:14016-14021. [PMID: 35638717 DOI: 10.1039/d2cp01254e] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
X-ray photoemission spectroscopy (XPS) has been used to examine the interaction between Au and HfS3 at the Au/HfS3 interface. XPS measurements reveal dissociative chemisorption of O2, leading to the formation of an oxide of Hf at the surface of HfS3. This surface hafnium oxide, along with the weakly chemisorbed molecular species, such as O2 and H2O, are likely responsible for the observed p-type characteristics of HfS3 reported elsewhere. HfS3 devices exhibit n-type behaviour if measured in vacuum but turn p-type in air. Au thickness-dependent XPS measurements provide clear evidence of band bending as the S 2p and Hf 4f core-level peak binding energies for Au/HfS3 are found to be shifted to higher binding energies. This band bending implies formation of a Schottky-barrier at the Au/HfS3 interface, which explains the low measured charge carrier mobilities of HfS3-based devices. The transistor measurements presented herein also indicate the existence of a Schottky barrier, consistent with the XPS core-level binding energy shifts, and show that the bulk of HfS3 is n-type.
Collapse
Affiliation(s)
- Archit Dhingra
- Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska-Lincoln, 855 N 16th Street, Lincoln, Nebraska 68588-0299, USA.
| | - Alexey Lipatov
- Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA.,Department of Chemistry, Biology & Health Sciences and Karen M. Swindler Department of Chemical and Biological Engineering, South Dakota School of Mines and Technology, 501 E. Saint Joseph St., Rapid City, SD 57701, USA
| | - Michael J Loes
- Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA
| | - Jehad Abourahma
- Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA
| | - Maren Pink
- Department of Chemistry, Indiana University, 800 E. Kirkwood Ave., Bloomington, IN 47405-7102, USA
| | - Alexander Sinitskii
- Department of Chemistry, Hamilton Hall, University of Nebraska-Lincoln, 639 North 12th Street, Lincoln, NE 68588-0304, USA
| | - Peter A Dowben
- Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska-Lincoln, 855 N 16th Street, Lincoln, Nebraska 68588-0299, USA.
| |
Collapse
|
4
|
Fang Y, Yang K, Zhang E, Liu S, Jia Z, Zhang Y, Wu H, Xiu F, Huang F. Quasi-1D van der Waals Antiferromagnetic CrZr 4 Te 14 with Large In-Plane Anisotropic Negative Magnetoresistance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200145. [PMID: 35338784 DOI: 10.1002/adma.202200145] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Revised: 03/20/2022] [Indexed: 06/14/2023]
Abstract
The discovery of 2D van der Waals (vdW) magnetic materials is of great significance to explore intriguing 2D magnetic physics and develop innovative spintronic devices. In this work, a new quasi-1D vdW layered compound CrZr4 Te14 is successfully synthesized. Owing to the existence of 1D [CrTe2 ] and [ZrTe3 ] chains along the b-axis, CrZr4 Te14 crystals show strong anisotropy of phonon vibrations, electrical transport, and magnetism. Density functional theory calculations reveal the ferromagnetic (FM) coupling within the [CrTe2 ] chain, while the interchain and interlayer couplings are both weakly antiferromagnetic (AF). Notably, a large intrinsic negative magnetoresistance (nMR) of -56% is achieved at 2 K under 9 T, and the in-plane anisotropic factor of nMR can reach up to 8.2 in the CrZr4 Te14 device. The 1D FM chains and anisotropic nMR effect make CrZr4 Te14 an interesting platform for exploring novel polarization-sensitive spintronics.
Collapse
Affiliation(s)
- Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ke Yang
- College of Science, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
| | - Hua Wu
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
- Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, P. R. China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China
- Shanghai Qi Zhi Institute, Shanghai, 200232, P. R. China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| |
Collapse
|
5
|
Nanoribbons of 2D materials: A review on emerging trends, recent developments and future perspectives. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2021.214335] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
|
6
|
Patra A, Rout CS. Anisotropic quasi-one-dimensional layered transition-metal trichalcogenides: synthesis, properties and applications. RSC Adv 2020; 10:36413-36438. [PMID: 35517917 PMCID: PMC9057157 DOI: 10.1039/d0ra07160a] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2020] [Accepted: 09/14/2020] [Indexed: 01/14/2023] Open
Abstract
The strong in-plane anisotropy and quasi-1D electronic structures of transition-metal trichalcogenides (MX3; M = group IV or V transition metal; X = S, Se, or Te) have pronounced influence on moulding the properties of MX3 materials. In particular, the infinite trigonal MX6 prismatic chains running parallel to the b-axis are responsible for the manifestation of anisotropy in these materials. Several marvellous properties, such as inherent electronic, optical, electrical, magnetic, superconductivity, and charge density wave (CDW) transport properties, make transition-metal trichalcogenides (TMTCs) stand out from other 2D materials in the fields of nanoscience and materials science. In addition, with the assistance of pressure, temperature, and tensile strain, these materials and their exceptional properties can be tuned to a superior extent. The robust anisotropy and incommensurable properties make the MX3 family fit for accomplishing quite a lot of compelling applications in the areas of field effect transistors (FETs), solar and fuel cells, lithium-ion batteries, thermoelectricity, etc. In this review article, a precise audit of the distinctive crystal structures, static and dynamic properties, efficacious synthesis schemes, and enthralling applications of quasi-1D MX3 materials is made.
Collapse
Affiliation(s)
- Abhinandan Patra
- Centre for Nano and Material Sciences, Jain University Jain Global Campus, Jakkasandra, Ramanagaram Bangalore-562112 India
| | - Chandra Sekhar Rout
- Centre for Nano and Material Sciences, Jain University Jain Global Campus, Jakkasandra, Ramanagaram Bangalore-562112 India
| |
Collapse
|