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Zhu G, Li W, Zhang Y. Implementation of excellent spin-filtering effect in half-metallic electrode-based single-molecule optoelectronic devices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:405301. [PMID: 38941993 DOI: 10.1088/1361-648x/ad5d37] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Accepted: 06/28/2024] [Indexed: 06/30/2024]
Abstract
The application of half-metallic materials in single-molecule optoelectronic devices opens a promising way in advancing device performance and functionality, thus addressing a research question of significance. Here we propose a series of single-molecule devices with half-metallic FeN4-doped armchair graphene nanoribbon as electrodes and metalloporphyrin (MPr) molecules as photoresponsive materials for photon harvesting, which are driven by photogalvanic effects (PGEs). Through the quantum transport simulations, we systematically investigated the spin-polarized photocurrents under the linearly polarized light illumination in these devices. Since the exclusive opening only exists in the spin-up channel of the half-metallic nanoribbons, these devices can generate a large photocurrent in the spin-up direction whereas suppressing the spin-down photocurrent. Consequently, they exhibit an effective spin-filtering effect at numerous photon energies. Our study unveils the excellent spin-filtering effect achieved in single-molecule optoelectronic devices with half-metallic electrodes, showing instructive significance for the future design of new optoelectronic devices.
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Affiliation(s)
- Guojia Zhu
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, the Ministry of Education, UESTC, Chengdu 611731, People's Republic of China
| | - Weili Li
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, the Ministry of Education, UESTC, Chengdu 611731, People's Republic of China
| | - Yanning Zhang
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
- Key Laboratory of Quantum Physics and Photonic Quantum Information, the Ministry of Education, UESTC, Chengdu 611731, People's Republic of China
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Li Y, Shang X, Zhou YH, Zheng X. The effect of light-irradiated area on the spin dependent photocurrent in zigzag graphene nanoribbon junctions. Phys Chem Chem Phys 2023; 25:24428-24435. [PMID: 37655683 DOI: 10.1039/d3cp01176c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
In this work, we study the photogalvanic effect of a zigzag graphene nanoribbon junction with a centro-symmetrical structure which consists of 8 zigzag chains by density functional calculations. Specifically, we focus on the cases where the irradiated region is just part of the central region and located at different positions, with an aim to see how the spin dependent photocurrents will change and whether pure spin current can be obtained. It is found that the magnitude of the spin-dependent photocurrents increases with a gradual increase of the irradiated region and pure spin current is achieved when and only when the entire central region is irradiated. In addition, we studied the additive effect in this device to see that if we divide the central region into two parts, whether the sum of the spin current generated by irradiating the two parts individually is equal to that produced when the entire central region is irradiated. It is found that the sum of the spin currents produced by irradiating the two parts individually is smaller than that obtained by irradiating the whole central region, which means that the rule of "1 + 2 = 3" does not hold and the coupling effect between the two parts is important in photocurrent generation.
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Affiliation(s)
- Yuejun Li
- College of Science, East China Jiao Tong University, Nanchang 330013, China.
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210037, China.
| | - Xiaofei Shang
- College of Science, East China Jiao Tong University, Nanchang 330013, China.
| | - Yan-Hong Zhou
- College of Science, East China Jiao Tong University, Nanchang 330013, China.
| | - Xiaohong Zheng
- College of Information Science and Technology, Nanjing Forestry University, Nanjing 210037, China.
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Kumar S, Pratap S, Kumar V, Mishra RK, Gwag JS, Chakraborty B. Electronic, transport, magnetic and optical properties of graphene nanoribbons review. LUMINESCENCE 2022. [PMID: 35850156 DOI: 10.1002/bio.4334] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Revised: 06/03/2022] [Accepted: 06/14/2022] [Indexed: 11/08/2022]
Abstract
Low dimensional materials have attracted great research interest from both theoretical and experimental point of view. These materials exhibit novel physical and chemical properties due to the confinement effect in low dimensions. The experimental observations of graphene open a new platform to study the physical properties of materials restricted to two dimensions. This featured article provides a review on the novel properties of quasi one-dimensional (1D) material known as graphene nanoribbon. Graphene nanoribbons can be obtained by unzipping carbon nanotubes (CNTs) or cutting the graphene sheet. Alternatively, it is also called the finite termination of graphene edges. It gives rise different edge geometries namely zigzag and armchair among others. There are various physical and chemical techniques to realize these materials. Depending on the edge type termination, these are called the zigzag and armchair graphene nanoribbons (ZGNR and AGNR). These edges play an important role in controlling the properties of graphene nanoribbons. The present review article provides an overview of the electronic, transport, optical and magnetic properties of graphene nanoribbons. However, there are different ways to tune these properties for device applications. Here, some of them are highlighted such as external perturbations and chemical modifications. Few applications of graphene nanoribbon have and chemical modifications. Few applications of graphene nanoribbon have also been briefly discussed.
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Affiliation(s)
- Sandeep Kumar
- Department of Physics and astronomical Science, Central University of Himachal Pradesh, Kangra, H.P, India
| | - Surender Pratap
- Department of Physics and astronomical Science, Central University of Himachal Pradesh, Kangra, H.P, India
| | - Vipin Kumar
- Department of Physics, Yeungnam University, Gyeongsan, South Korea
| | | | - Jin Seog Gwag
- Department of Physics, Yeungnam University, Gyeongsan, South Korea
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 105] [Impact Index Per Article: 52.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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Xie Y, Zhao J, Hu Y, Ye X, Xie Y, Cao R. Outstanding spin-transport properties of a flexible phosphorene photodetector driven by the photogalvanic effect under mechanical strains. Phys Chem Chem Phys 2021; 23:11961-11967. [PMID: 34002190 DOI: 10.1039/d0cp06712a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Monolayer phosphorene has outstanding spintronic properties including a nanosecond spin lifetime, and micrometer spin relaxation length, combined with excellent mechanical flexibility, making it rather attractive in low-dimensional flexible spintronic devices. However, knowledge on the spin-transport properties of phosphorene under mechanical strain is currently very limited. Here, we study the transport properties of the spin-polarized photocurrent in the flexible Ni-phosphorene-Ni photodetector, which is driven by the photogalvanic effect (PGE) under mechanical tension stress and bending. Broadband PGE photocurrent is generated at zero bias under the illumination of linearly polarized light due to the broken inversion symmetry of the photodetector. Remarkable spin-transport performances including the fully spin-polarized photocurrent, perfect spin-valve effect, and enhanced pure spin current are generated in a broad visible range by applying appropriate mechanical tension stress or bending. Our results indicate that the PGE-driven phosphorene-based photodetector has promising applications in flexible and low-power spintronic devices.
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Affiliation(s)
- Yufeng Xie
- State Key Laboratory of ASIC and systems, School of Microelectronics, Fudan University, Shanghai 200433, China
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Wan H, Xiao X, Zhou G, Hu W. Spin-resolved transport properties of atomic carbon chain between sawtooth zigzag-edge graphene nanoribbons electrodes. Mol Phys 2020. [DOI: 10.1080/00268976.2020.1857448] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
Affiliation(s)
- Haiqing Wan
- Department of Ecology and Environment, Yuzhang Normal University, Nanchang, People's Republic of China
| | - Xianbo Xiao
- School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang, People's Republic of China
| | - Guanghui Zhou
- Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha, People's Republic of China
| | - Wei Hu
- Department of Science Teaching, Jiangxi University of Technology, Nanchang, People's Republic of China
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