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Tang H, Li Y, Sokolovskij R, Sacco L, Zheng H, Ye H, Yu H, Fan X, Tian H, Ren TL, Zhang G. Ultra-High Sensitive NO 2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS 2/IGZO p-N Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40850-40859. [PMID: 31577407 DOI: 10.1021/acsami.9b13773] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS2) with a sputtered indium-gallium-zinc-oxide (IGZO) film. To the best of our knowledge, the present device has the best NO2 gas sensor response compared to all the gas sensors based on transition-metal dichalcogenide materials. The gas-sensing response is investigated under different NO2 concentrations, adopting heterojunction device mode and transistor mode. High sensing response is obtained of p-N diode in the range of 1-300 ppm with values of 230% for 5 ppm and 18 170% for 300 ppm. On the transistor mode, the gas-sensing response can be modulated by the gate bias, and the transistor shows an ultrahigh response after exposure to NO2, with sensitivity values of 6820% for 5 ppm and 499 400% for 300 ppm. Interestingly, the transistor has a typical ambipolar behavior under dry air, while the transistor becomes p-type as the amount of NO2 increases. The assembly of these results demonstrates that the WS2/IGZO device is a promising platform for the NO2-gas detection, and its gas-modulated transistor properties show a potential application in tunable engineering for two-dimensional material heterojunction-based transistor device.
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Affiliation(s)
- Hongyu Tang
- Department of Microelectronics , Delft University of Technology , Delft 2628 CD , The Netherlands
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist) , Tsinghua University , Beijing 100084 , China
- Changzhou Institute of Technology Research for Solid State Lighting , Changzhou 213161 , China
| | - Yutao Li
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist) , Tsinghua University , Beijing 100084 , China
| | - Robert Sokolovskij
- Department of Microelectronics , Delft University of Technology , Delft 2628 CD , The Netherlands
- School of Microelectronics , Southern University of Science and Technology , Shenzhen 518055 , China
| | - Leandro Sacco
- Department of Microelectronics , Delft University of Technology , Delft 2628 CD , The Netherlands
| | - Hongze Zheng
- School of Microelectronics , Southern University of Science and Technology , Shenzhen 518055 , China
| | - Huaiyu Ye
- School of Microelectronics , Southern University of Science and Technology , Shenzhen 518055 , China
- Shenzhen Institute of Wide-bandgap Semiconductors , Shenzhen 518055 , China
| | - Hongyu Yu
- School of Microelectronics , Southern University of Science and Technology , Shenzhen 518055 , China
| | - Xuejun Fan
- Department of Mechanical Engineering , Lamar University , Beaumont , Texas 77710 , United States
| | - He Tian
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist) , Tsinghua University , Beijing 100084 , China
| | - Tian-Ling Ren
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist) , Tsinghua University , Beijing 100084 , China
| | - Guoqi Zhang
- Department of Microelectronics , Delft University of Technology , Delft 2628 CD , The Netherlands
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