The performance of adsorption, dissociation and diffusion mechanism of hydrogen on the Ti-doped ZrCo(110) surface

Unraveling CO adsorption behaviors and its poisoning effects on ZrCo surface

Theoretical calculations are performed to elucidate the adsorption behaviors and poisoning effects of CO gas on the ZrCo surface, which drastically limits its application in hydrogen isotopic storage. Specifically, the ionic Zr-Co bond on the surface leads to unique CO adsorption structures on different sites. The CO molecule tends to prefer a tilted adsorption configuration on the Co-Co bridge site. The electronic structures, charge distributions, and bonding characteristics are further explored to study the CO adsorption properties, which obey the electron density donation and back-donation mechanism. For different CO coverages, the stepwise adsorption energies of CO increase with the increasing of coverage, reaching the saturated coverage at nCO = 11. Then, the effects of temperature and partial pressure on CO coverage are evaluated using atomic thermodynamics. The computed phase diagram shows that the ZrCo(110) surface has a stable coverage of nCO = 6 at ambient temperature under ultrahigh vacuum conditions. The pre-adsorbed CO molecules lead to the charge redistribution and the d-band center downshift on the surface, which significantly affect hydrogen adsorption and dissociation. Our results provide insights into the poisoning mechanisms of the impurity gas on ZrCo alloys, which can be beneficial for designing high-performance ZrCo-based alloys with improved poisoning tolerance.

Effect of doping Ti on the vacancy trapping mechanism for helium in ZrCo from first principles

The interactions of dopants with point defects such as that between vacancies and helium can affect helium evolution and ultimately the macroscopic properties of materials. Herein, the microscopic vacancy trapping mechanism for He defects and the formation of small He_mVac_n (consisting of m He atoms and n vacancies) clusters in pure and Ti-doped ZrCo systems are investigated by carrying out an extensive set of first-principles calculations based on density functional theory. Our results uncover the following: the helium atom can segregate from the adjacent interstitial (tetrahedral and octahedral) sites towards the vacancy center spontaneously, and therefore, a single He atom is energetically favorable to occupy a vacancy whether in the pure or in the doped system. The dopant Ti can act as a trapping center for He impurities similar to a vacancy. Moreover, it can improve the trapping ability and increase the trapping radius of the vacancies for helium. As for the effect of the Ti atom on the trapping of multiple helium atoms by the vacancy, the higher barrier in the doped systems than in the pure one implies that doping inhibits the formation of large He_mVac clusters. Furthermore, in order to evaluate the effect of dopant Ti on the stability of He atoms in multiple vacancies, the binding energies of a helium atom, a vacancy (Vac), and a self-interstitial atom (SIA) to a helium-vacancy cluster (He_mVac_n) were obtained and compared with that of the pure system. The results suggest that the cluster growth can be inhibited by the dopant Ti, and therefore, the formation of large helium bubbles is also hindered. All the binding energies do not depend much on the cluster size but primarily on the helium-to-vacancy ratio (m/n) of the clusters. The stability of the clusters is decided by the competitive processes among the emission of He atoms, vacancies, and SIAs, and also depends on the helium-to-vacancy ratio. The present results provide an in-depth explanation for the effect of the dopant on helium behavior and could aid future tritium storage material design.