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Zhang J, Lin Y, Liu L. Electron transfer in heterojunction catalysts. Phys Chem Chem Phys 2023; 25:7106-7119. [PMID: 36846919 DOI: 10.1039/d2cp05150h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Heterojunction catalysis, the cornerstone of the modern chemical industry, shows potential to tackle the growing energy and environmental crises. Electron transfer (ET) is ubiquitous in heterojunction catalysts, and it holds great promise for improving the catalytic efficiency by tuning the electronic structures or building internal electric fields at interfaces. This perspective summarizes the recent progress of catalysis involving ET in heterojunction catalysts and pinpoints its crucial role in catalytic mechanisms. We specifically highlight the occurrence, driving forces, and applications of ET in heterojunction catalysis. For corroborating the ET processes, common techniques with measurement principles are introduced. We end with the limitations of the current study on ET, and envision future challenges in this field.
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Affiliation(s)
- Jianhua Zhang
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing, College of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan 430200, P. R. China.
| | - Yuan Lin
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing, College of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan 430200, P. R. China.
| | - Lijun Liu
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing, College of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan 430200, P. R. China.
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2
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Yang X, Shen Y, Liu J, Meng X, Gao X, Lv L, Zhou M, Zhang Y, Zheng Y, Zhou Z. Electronic and optical properties of a novel two-dimensional semiconductor material TlPt 2S 3: a first-principles study. Phys Chem Chem Phys 2022; 24:7642-7652. [PMID: 35297434 DOI: 10.1039/d1cp05918a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
Two-dimensional (2D) materials have attracted widespread attention due to their unique physical and chemical properties. Here, by using density functional theory calculations, we suggest a novel 2D TlPt2S3 material whose layered bulk counterpart was synthesized in 1973. Theoretical calculation results indicate that the exfoliating energy of monolayer and bilayer TlPt2S3 is 34.96 meV Å-2 and 36.03 meV Å-2. We systematically studied the electronic and optical properties of monolayer and bilayer TlPt2S3, and revealed that they are indirect band gap semiconductors with band gaps of 2.26 eV and 2.10 eV, respectively. Monolayer and bilayer TlPt2S3 exhibit superior carrier mobility (901.63 cm2 V-1 s-1 and 13635.04 cm2 V-1 s-1 for electron mobility of the monolayer and bilayer, respectively) and photocatalytic performance (as high as 1 × 105 light absorption coefficient in the visible light region). Interestingly, we find that monolayer TlPt2S3 has significant hydrogen evolution performance, while in the bilayer, the electron band distribution shows complete oxygen evolution ability, which indicates that the proposed monolayer and bilayer TlPt2S3 are potential novel 2D materials suitable for photocatalytic water splitting driven by visible light.
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Affiliation(s)
- Xin Yang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Yanqing Shen
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China. .,Heilongjiang Provincial Key Laboratory of Plasma Physics and Application Technology, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - Jiajia Liu
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Xianghui Meng
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Xu Gao
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Lingling Lv
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Min Zhou
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Yu Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Yangdong Zheng
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Zhongxiang Zhou
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China. .,Heilongjiang Provincial Key Laboratory of Plasma Physics and Application Technology, Harbin Institute of Technology, Harbin, 150001, P. R. China
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3
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Opoku F, Osei-Bonsu Oppong S, Aniagyei A, Akoto O, Adimado AA. Boosting the photocatalytic H 2 evolution activity of type-II g-GaN/Sc 2CO 2 van der Waals heterostructure using applied biaxial strain and external electric field. RSC Adv 2022; 12:7391-7402. [PMID: 35424662 PMCID: PMC8982186 DOI: 10.1039/d2ra00419d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 02/26/2022] [Indexed: 01/17/2023] Open
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures are a new class of materials with highly tunable bandgap transition type, bandgap energy and band alignment. Herein, we have designed a novel 2D g-GaN/Sc2CO2 heterostructure as a potential solar-driven photocatalyst for the water splitting process and investigate its catalytic stability, interfacial interactions, and optical and electronic properties, as well as the effects of applying an electric field and biaxial strain using first-principles calculation. The calculated lattice mismatch and binding energy showed that g-GaN and Sc2CO2 are in contact and may form a stable vdW heterostructure. Ab initio molecular dynamics and phonon dispersion simulations show thermal and dynamic stability. g-GaN/Sc2CO2 has an indirect bandgap energy with appropriate type-II band alignment relative to the water redox potentials. Meanwhile, the interfacial charge transfer from g-GaN to Sc2CO2 can effectively separate electron-hole pairs. Moreover, a potential drop of 3.78 eV is observed across the interface, inducing a built-in electric field pointing from g-GaN to Sc2CO2. The heterostructure shows improved visible-light optical absorption compared to the isolated g-GaN and Sc2CO2 monolayers. Our study demonstrates that tunable electronic and structural properties can be realised in the g-GaN/Sc2CO2 heterostructure by varying the electric field and biaxial strain. In particular, the compressive strain and negative electric field are more effective for promoting hydrogen production performance. Since it is challenging to tune the electric field and biaxial strain experimentally, our research provides strategies to boost the performance of MXene-based heterojunction photocatalysts in solar harvesting and optoelectronic devices.
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Affiliation(s)
- Francis Opoku
- Department of Chemistry, Kwame Nkrumah University of Science and Technology Kumasi Ghana
| | | | - Albert Aniagyei
- Department of Basic Sciences, University of Health and Allied Sciences Ho Ghana
| | - Osei Akoto
- Department of Chemistry, Kwame Nkrumah University of Science and Technology Kumasi Ghana
| | - Anthony Apeke Adimado
- Department of Chemistry, Kwame Nkrumah University of Science and Technology Kumasi Ghana
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Chen X, Zhang H, Zhang Y. Transition metal doped graphene-like germanium carbide: Screening of high performance electrocatalysts for oxygen reduction, oxygen evolution, or hydrogen evolution. Colloids Surf A Physicochem Eng Asp 2021. [DOI: 10.1016/j.colsurfa.2021.127628] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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5
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Vo DD, Idrees M, Pham VT, Vu TV, Nguyen ST, Phuc HV, Hieu NN, Binh NT, Amin B, Nguyen CV. Electronic structure and optical performance of PbI2/SnSe2 heterostructure. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110736] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
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6
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Chai J, Wang Z, Li Y. Investigation of the mechanism of overall water splitting in UV-visible and infrared regions with SnC/arsenene vdW heterostructures in different configurations. Phys Chem Chem Phys 2020; 22:1045-1052. [PMID: 31859701 DOI: 10.1039/c9cp05811g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Monolayer arsenene presents good stability and high photogenic carrier mobility. However, a high photogenic electron and hole pair recombination rate seriously reduces its photocatalytic activity. The photocatalytic activity can be effectively improved by building type II heterostructures. In this work, SnC/arsenene heterostructures in three configurations are studied using first-principles calculations. Their structure, stability, and electronic and photocatalytic properties are investigated. It is found that all SnC/arsenene heterostructures are stable, and form type-II band edges, which effectively promote the transfer of photogenerated electrons from the SnC monolayer to the arsenene sheet. The charge transfer between SnC and arsenene leads to a built-in electric field in the interface region, which is favorable for inhibiting photogenic electron and hole pair recombination. Compared with the monolayer arsenene, the photocatalytic activity is greatly improved and the absorption spectrum of SnC/arsenene heterostructures is expanded. Attractively, these three heterostructures present two different photocatalytic mechanisms. H1 and H3 configurations were taken as examples to study their photocatalytic properties for overall water splitting at varying pH values and external strains. We found that alkaline conditions were more favorable for photocatalysis of SnC/arsenene heterostructures. In particular, H3 can still achieve full photocatalytic water decomposition in the near infrared region. These results show that the SnC/arsenene heterostructures are a prospective material for photocatalysis application.
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Affiliation(s)
- Jian Chai
- School of Information Science and Engineering, Lanzhou University, China.
| | - Zhong Wang
- School of Information Science and Engineering, Lanzhou University, China.
| | - Yuee Li
- School of Information Science and Engineering, Lanzhou University, China.
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7
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Nguyen HTT, Vu TV, Pham VT, Hieu NN, Phuc HV, Hoi BD, Binh NTT, Idrees M, Amin B, Nguyen CV. Computational insights into structural, electronic and optical characteristics of GeC/C 2N van der Waals heterostructures: effects of strain engineering and electric field. RSC Adv 2020; 10:2967-2974. [PMID: 35496107 PMCID: PMC9048868 DOI: 10.1039/c9ra08749d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Accepted: 01/03/2020] [Indexed: 01/14/2023] Open
Abstract
Vertical heterostructures from two or more than two two-dimensional materials are recently considered as an effective tool for tuning the electronic properties of materials and for designing future high-performance nanodevices. Here, using first principles calculations, we propose a GeC/C2N van der Waals heterostructure and investigate its electronic and optical properties. We demonstrate that the intrinsic electronic properties of both GeC and C2N monolayers are quite preserved in GeC/C2N HTS owing to the weak forces. At the equilibrium configuration, GeC/C2N HTS forms the type-II band alignment with an indirect band gap of 0.42 eV, which can be considered to improve the effective separation of electrons and holes. Besides, GeC/C2N vdW-HTS exhibits strong absorption in both visible and near ultra-violet regions with an intensity of 105 cm-1. The electronic properties of GeC/C2N HTS can be tuned by applying an electric field and vertical strains. The semiconductor to metal transition can be achieved in GeC/C2N HTS in the case when the positive electric field of +0.3 V Å-1 or the tensile vertical strain of -0.9 Å is applied. These findings demonstrate that GeC/C2N HTS can be used to design future high-performance multifunctional devices.
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Affiliation(s)
- Hong T T Nguyen
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Tuan V Vu
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Van Thinh Pham
- Center of Excellence for Green Energy and Environmental Nanomaterials, Nguyen Tat Thanh University Ho Chi Minh City Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam
| | - Bui D Hoi
- Department of Physics, University of Education, Hue University Hue Vietnam
| | - Nguyen T T Binh
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
| | - M Idrees
- Department of Physics, Hazara University Mansehra 21300 Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science and Technology Abbottabad 22010 Pakistan
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Ha Noi 100000 Vietnam
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8
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Han S, Li Y, Chai J, Wang Z. Study of the GaAs/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst promoted by a built-in electric field. Phys Chem Chem Phys 2020; 22:8565-8571. [DOI: 10.1039/d0cp00139b] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The built-in electric field promotes GaAs/SiH as a high efficiency photocatalyst for water splitting in visible light.
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Affiliation(s)
- Shuaicheng Han
- School of Information Science and Engineering
- Lanzhou University
- China
| | - Yuee Li
- School of Information Science and Engineering
- Lanzhou University
- China
| | - Jian Chai
- School of Information Science and Engineering
- Lanzhou University
- China
| | - Zhong Wang
- School of Information Science and Engineering
- Lanzhou University
- China
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9
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Vu TV, Dao TP, Idrees M, Phuc HV, Hieu NN, Binh NTT, Dinh HB, Amin B, Nguyen CV. Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures. Phys Chem Chem Phys 2020; 22:7952-7961. [DOI: 10.1039/c9cp07009e] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional materials has recently emerged as an effective way to enhance the performance of nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Tuan V. Vu
- Division of Computational Physics
- Institute for Computational Science
- Ton Duc Thang University
- Ho Chi Minh City
- Vietnam
| | - Tan Phat Dao
- Center of Excellence for Green Energy and Environmental Nanomaterials
- Nguyen Tat Thanh University
- Ho Chi Minh City
- Vietnam
| | - M. Idrees
- Department of Physics
- Hazara University
- Mansehra 21300
- Pakistan
| | - Huynh V. Phuc
- Division of Theoretical Physics
- Dong Thap University
- Cao Lanh 870000
- Vietnam
| | - Nguyen N. Hieu
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
| | - Nguyen T. T. Binh
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
| | - Hoi B. Dinh
- Department of Physics
- University of Education
- Hue University
- Hue
- Vietnam
| | - B. Amin
- Department of Physics
- Abbottabad University of Science and Technology
- Abbottabad 22010
- Pakistan
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Ha Noi 100000
- Vietnam
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10
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Han S, Li Y, Wang Z. PtSe2/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst for water splitting. Phys Chem Chem Phys 2020; 22:17145-17151. [DOI: 10.1039/d0cp02900a] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
PtSe2/SiH type-II van der Waals heterostructure is a highly efficient photocatalyst for water splitting in visible light.
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Affiliation(s)
- Shuaicheng Han
- School of Information Science and Engineering
- Lanzhou University
- China
| | - Yuee Li
- School of Information Science and Engineering
- Lanzhou University
- China
| | - Zhong Wang
- School of Information Science and Engineering
- Lanzhou University
- China
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11
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Vo DD, Vu TV, Hieu NV, Hieu NN, Phuc HV, Binh NTT, Phuong LTT, Idrees M, Amin B, Nguyen CV. Band alignment and optical features in Janus-MoSeTe/X(OH)2 (X = Ca, Mg) van der Waals heterostructures. Phys Chem Chem Phys 2019; 21:25849-25858. [DOI: 10.1039/c9cp06019g] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
van der Waals heterostructures can be effectively used to enhance the electronic and optical properties and extend the application range of two-dimensional materials.
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Affiliation(s)
- Dat D. Vo
- Division of Computational Physics
- Institute for Computational Science
- Ton Duc Thang University
- Ho Chi Minh City
- Vietnam
| | - Tuan V. Vu
- Division of Computational Physics
- Institute for Computational Science
- Ton Duc Thang University
- Ho Chi Minh City
- Vietnam
| | - Nguyen V. Hieu
- Department of Physics
- University of Education
- The University of Da Nang
- Vietnam
| | - Nguyen N. Hieu
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
| | - Huynh V. Phuc
- Division of Theoretical Physics
- Dong Thap University
- Cao Lanh 870000
- Vietnam
| | - Nguyen T. T. Binh
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
| | - Le T. T. Phuong
- Department of Physics
- University of Education
- Hue University
- Hue
- Vietnam
| | - M. Idrees
- Department of Physics
- Hazara University
- Mansehra 21300
- Pakistan
| | - B. Amin
- Department of Physics
- Abbottabad University of Science and Technology
- Abbottabad 22010
- Pakistan
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Ha Noi 100000
- Vietnam
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