A new criterion for the prediction of solid-state phase transition in TMDs

Doping effects on the antibonding states and carriers of two-dimensional PC6

The absence of a bandgap in pristine graphene severely restricts its application, and there is high demand for other novel two-dimensional (2D) materials. PC₆ has recently emerged as a promising 2D material with a direct band gap and ultrahigh carrier mobility. In light of the remarkable properties of an intrinsic PC₆ monolayer, it would be intriguing to find out whether a doped PC₆ monolayer displays properties superior to the pure system. In this study, we have performed density functional theory calculations to understand the doping effects of both P-site and C-site substitution in PC₆ and, for the first time, we discovered doping-related impurity-level anomalies in this system. We successfully explained why no donor or acceptor defect states exist in the band structures of X_P-PC₆ (X = C, Ge, Sn, O, S, Se, or Te). In group-IV-substituted systems, these dopant states hybridize with host states near the Fermi level rather than act as acceptors, which is deemed to be a potential way to tune the mobility of PC₆. In the case of group-VI substitution, the underlying mechanism relating to doping anomalies arises from excess electrons occupying antibonding states.

Structural evolution and phase transition mechanism of [Formula: see text] under high pressure

[Formula: see text] is a layered transition-metal dichalcogenide (TMD) with outstanding electronic and optical properties, which is widely used in field-effect transistor (FET). Here the structural evolution and phase transition of [Formula: see text] under high pressure are systematically studied by CALYPSO structural search method and first-principles calculations. The structural evolutions of [Formula: see text] show that the ground state structure under ambient pressure is the experimentally observed P6[Formula: see text]/mmc phase, which transfers to R3m phase at 1.9 GPa. The trigonal R3m phase of [Formula: see text] is stable up to 72.1 GPa, then, it transforms into a new P6[Formula: see text]/mmc phase with different atomic coordinates of Se atoms. This phase is extremely robust under ultrahigh pressure and finally changes to another trigonal R-3m phase under 491.1 GPa. The elastic constants and phonon dispersion curves indicate that the ambient pressure phase and three new high-pressure phases are all stable. The electronic band structure and projected density of states analyses reveal a pressure induced semiconducting to metallic transition under 72.1 GPa. These results offer a detailed structural evolution and phase diagram of [Formula: see text] under high pressure, which may also provide insights for exploration other TMDs under ultrahigh pressure.

Judging the phase transition pressure of the unknown parent phase if the resulting state is known

In high-pressure phase transition experiments, the crystal structure of the intermediate phase in some phase transitions is difficult to successfully measure due to the limitations of the experimental conditions. The absence of crystal structure data for the intermediate phase also makes it difficult to calculate the pressure point from the intermediate phase to the new phase by the traditional thermodynamic criterion in theoretical simulations. The Conch Criterion is employed by us to successfully verify the phase transition points by observing the reverse shifts of the DOS (electron density of states) curves for the new phase of Cu2S, PbS, PbSe and PbTe, which breaks through the constraints of the traditional criterion and realizes tracing the source of the phase transition in theoretical calculations.