Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect

Influence of electronic correlation on the valley and topological properties of VSiGeP4 monolayer

Valley is used as a new degree of freedom for information encoding and storage. In this work, the valley and topological properties of the VSiGeP4 monolayer were studied by adjusting the U value based on first-principles calculations. The VSiGeP4 monolayer remains in a ferromagnetic ground state regardless of the change in the U value. The magnetic anisotropy of the VSiGeP4 monolayer is initially in-plane, and then turns out-of-plane with the increase in the U value. Moreover, a topological phase transition is observed in the present VSiGeP4 monolayer with the increase in U value from 0 to 3 eV, i.e., the VSiGeP4 monolayer behaves as a bipolar magnetic semiconductor, a ferrovalley semiconductor, a half-valley metal characteristic, and a quantum anomalous Hall state. The mechanism of the topological phase transition behavior of the VSiGeP4 monolayer was analyzed. It was found that the variation in U values would change the strength of the electronic correlation effect, resulting in the valley and topological properties. In addition, carrier doping was studied to design a valleytronic device using this VSiGeP4 monolayer. By doping 0.05 electrons per f.u., the VSiGeP4 monolayer with a U value of 3 eV exhibits 100% spin polarization. This study indicates that the VSiGeP4 monolayer has potential applications in spintronic, valleytronic, and topological electronic nanodevices.

Engineering Layertronics in Two-Dimensional Ferromagnetic Multiferroic Lattice

Layertronics, rooted in the layer Hall effect (LHE), is an emerging fundamental phenomenon in condensed matter physics and spintronics. So far, several theoretical and experimental proposals have been made to realize LHE, but all are based on antiferromagnetic systems. Here, using symmetry and tight-binding model analysis, we propose a general mechanism for engineering layertronics in a two-dimensional ferromagnetic multiferroic lattice. The physics is related to the band geometric properties and multiferroicity, which results in the coupling between Berry curvature and layer degree of freedom, thereby generating the LHE. Using first-principles calculations, we further demonstrate this mechanism in bilayer (BL) TcIrGe2S6. Due to the intrinsic inversion and time-reversal symmetry breakings, BL TcIrGe2S6 exhibits multiferroicity with large Berry curvatures at both the center and corners of the Brillouin zone. These Berry curvatures couple with the layer physics, forming the LHE in BL TcIrGe2S6. Our work opens a new direction for research on layertronics.

A Janus CrSSe monolayer with interesting ferromagnetism

The search for intrinsic half-metallic ferromagnetic (FM) monolayers with a high Curie temperature (TC), considerable magnetic anisotropy energy (MAE), and multiferroic coupling is key for the development of ultra-compact spintronics. Here, we have identified a new stable FM Janus monolayer, the tetrahedral CrSSe, through first-principles structural search calculations, which not only exhibits very interesting magnetoelectric properties with a high TC of 790 K, a large MAE of 0.622 meV per Cr, and robust half-metallicity, but also shows obvious ferroelasticity with a modest energy barrier of 0.31 eV per atom. Additionally, there appears to be interesting multiferroic coupling between in-plane magnetization and ferroelasticity. Furthermore, by replacing the Se/S atoms in the CrSSe monolayer with S/Se atoms, we obtained two new half-metallic FM CrS2 and CrSe2 monolayers, which also exhibit excellent magnetoelectric properties. Therefore, our findings provide a pathway to design novel multiferroic materials and enrich the understanding of 2D transition metal chalcogenides.

The Dirac half-semimetal and quantum anomalous Hall effect in two-dimensional Janus Mn2X3Y3 (X, Y = F, Cl, Br, I)

The quantum anomalous Hall (QAH) effect has been experimentally observed in magnetically-doped topological insulators. However, the QAH effect is only seen at extremely low temperatures due to the weak magnetic coupling, small band gap and low carrier mobility. Here, based on first-principles density functional theory, we predict that the Janus Mn₂X₃Y₃ (X, Y) = F, Cl, Br, I are high Curie temperature ferromagnets. Furthermore, we find that they are Dirac half-metals characterized by a Dirac cone in one spin channel with carrier mobilities comparable to freestanding germanene and a large band gap in the other spin channel except for Mn₂F₃I₃. Simultaneously, when the spin-orbital coupling interaction is considered, the Janus Mn₂F₃Cl₃, Mn₂Cl₃Br₃, and Mn₂Br₃I₃ exhibit a nontrivial band gap, indicating that they host a QAH phase. More interestingly, both the Chern number sign and the chiral edge current are tuned by changing the direction of magnetization. Moreover, we find that topological properties are related to the lattice constant and magnetocrystalline anisotropy. Our findings would suggest the possibility of not only realizing the QAH effect but also designing the flow direction of the edge current.