Symmetry-Guaranteed High Carrier Mobility in Quasi-2D Thermoelectric Semiconductors

Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, and transport properties. However, most quasi-2D semiconductors experimentally synthesized so far have relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on the crystal symmetry arguments to facilitate the charge transport of quasi-2D semiconductors, in which the horizontal mirror symmetry is found to vanish the electron-phonon coupling strength mediated by phonons with purely out-of-plane vibrational vectors. This is demonstrated in ZrBeSi-type quasi-2D systems, where the representative sample Ba_1.01 AgSb shows a high room-temperature hole mobility of 344 cm² V^-1 S^-1 , a record value among quasi-2D polycrystalline thermoelectrics. Accompanied by intrinsically low thermal conductivity, an excellent p-type zT of ≈1.3 is reached at 1012 K, which is the highest value in ZrBeSi-type compounds. This work uncovers the relation between electron-phonon coupling and crystal symmetry in quasi-2D systems, which broadens the horizon to develop high mobility semiconductors for electronic and energy conversion applications.

Periodic nanostructures: preparation, properties and applications

Periodic nanostructures, a group of nanomaterials consisting of single or multiple nano units/components periodically arranged into ordered patterns (e.g., vertical and lateral superlattices), have attracted tremendous attention in recent years due to their extraordinary physical and chemical properties that offer a huge potential for a multitude of applications in energy conversion, electronic and optoelectronic applications. Recent advances in the preparation strategies of periodic nanostructures, including self-assembly, epitaxy, and exfoliation, have paved the way to rationally modulate their ferroelectricity, superconductivity, band gap and many other physical and chemical properties. For example, the recent discovery of superconductivity observed in "magic-angle" graphene superlattices has sparked intensive studies in new ways, creating superlattices in twisted 2D materials. Recent development in the various state-of-the-art preparations of periodic nanostructures has created many new ideas and findings, warranting a timely review. In this review, we discuss the current advances of periodic nanostructures, including their preparation strategies, property modulations and various applications.

Origins of Minimized Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in WS2/WSe2 Lateral Superlattice

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional transition metal dichalcogenide WS₂ based on the experimentally prepared WS₂/WSe₂ lateral superlattice (LS) crystal. On the basis of density function theory combined with a Boltzmann transport equation, we show that the TE figure of merit zT of monolayer WS₂ is remarkably enhanced when forming into a WS₂/WSe₂ LS crystal. This is primarily ascribed to the almost halved lattice thermal conductivity due to the enhanced anharmonic processes. Electronic transport properties parallel (xx) and perpendicular (yy) to the superlattice period are highly symmetric for both p- and n-doped LS owing to the nearly isotropic lifetime of charger carriers. The spin-orbital effect causes a significant split of conduction band and leads to three-fold degenerate sub-bands and high density of states (DOS), which offers opportunity to obtain a high n-type Seebeck coefficient (S). Interestingly, the separated degenerate sub-bands and upper conduction band in monolayer WS₂ form a remarkable stair-like DOS, yielding a higher S. The hole carriers with much higher mobility than electrons reveal the high p-type power factor, and the potential to be good p-type TE materials with optimal zT exceeds 1 at 400 K in WS₂/WSe₂ LS.