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Wang J, Yao C, Lu S, Wang S, Zheng D, Song F, Wan J. Enhanced magnetic anisotropy of iridium dimers on antisite defects of two-dimensional transition-metal dichalcogenides. Phys Chem Chem Phys 2024; 26:11798-11806. [PMID: 38566592 DOI: 10.1039/d4cp00301b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
The combination of transition-metal (TM) elements with two-dimensional (2D) transition-metal dichalcogenides (TMDs) provides an effective route to realizing a 2D controllable magnetic order, leading to significant applications in multifunctional nanospintronics. However, in most TM atoms@TMDs nanostructures, it is challenging for the magnetic anisotropy energy (MAE) to exceed 30 meV when affected by the crystal field. Hence, the stronger magnetic anisotropy of TMDs has yet to be developed. Here, utilizing first-principle calculations based on density functional theory (DFT), a feasible method to enhance the MAEs of TMDs via configurating iridium dimers (Ir2) on 2D traditional and Janus TMDs with antisite defects is reported. Calculations revealed that 28 of the 54 configurations considered possessed structure-dependent MAEs of >60 meV per Ir2 in the out-of-plane direction, suggesting the potential for applications at room temperature. We also showed the ability to tune the MAE further massively by applying a biaxial strain as well as the surface asymmetric polarization reversal of Janus-type substrates. This approach led to changes to >80 meV per Ir2. This work provides a novel strategy to achieve tunable large magnetic anisotropy in 2D TMDs. It also extends the functionality of antisite-defective TMDs, thereby providing theoretical support for the development of magnetic nanodevices.
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Affiliation(s)
- Jun Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
| | - Chen Yao
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
| | - Siqi Lu
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
- Atomic Manufacture Institute (AMI), 211805 Nanjing, China
| | - Suyun Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
| | - Dong Zheng
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
- Atomic Manufacture Institute (AMI), 211805 Nanjing, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
- Atomic Manufacture Institute (AMI), 211805 Nanjing, China
| | - Jianguo Wan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China.
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Liu H, Ji G, Ge P, Ge G, Yang X, Zhang J. Engineering Magnetic Anisotropy of Rhenium Atom in Nitrogenized Divacancy of Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:829. [PMID: 36903707 PMCID: PMC10004848 DOI: 10.3390/nano13050829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Revised: 02/20/2023] [Accepted: 02/20/2023] [Indexed: 06/18/2023]
Abstract
The effects of charging on the magnetic anisotropy energy (MAE) of rhenium atom in nitrogenized-divacancy graphene (Re@NDV) are investigated using density functional theory (DFT) calculations. High-stability and large MAE of 71.2 meV are found in Re@NDV. The more exciting finding is that the magnitude of MAE of a system can be tuned by charge injection. Moreover, the easy magnetization direction of a system may also be controlled by charge injection. The controllable MAE of a system is attributed to the critical variation in dz2 and dyz of Re under charge injection. Our results show that Re@NDV is very promising in high-performance magnetic storage and spintronics devices.
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Affiliation(s)
- Honglei Liu
- Key Laboratory for Green Processing of Chemical Engineering of Xinjiang Bingtuan, School of Chemistry and Chemical Engineering, Shihezi University, Shihezi 832003, China
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology and Department of Physics, College of Science, Shihezi University, Shihezi 832003, China
| | - Guangtian Ji
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology and Department of Physics, College of Science, Shihezi University, Shihezi 832003, China
| | - Pingji Ge
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology and Department of Physics, College of Science, Shihezi University, Shihezi 832003, China
| | - Guixian Ge
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology and Department of Physics, College of Science, Shihezi University, Shihezi 832003, China
| | - Xiaodong Yang
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology and Department of Physics, College of Science, Shihezi University, Shihezi 832003, China
| | - Jinli Zhang
- Key Laboratory for Green Processing of Chemical Engineering of Xinjiang Bingtuan, School of Chemistry and Chemical Engineering, Shihezi University, Shihezi 832003, China
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China
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3
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Ge M, Chu L, Guo M, Su Y, Zhang J. First-Principles Study of Ir n (n = 3-5) Clusters Adsorbed on Graphene and Hexagonal Boron Nitride: Structural and Magnetic Properties. NANOMATERIALS 2022; 12:nano12142436. [PMID: 35889660 PMCID: PMC9317977 DOI: 10.3390/nano12142436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Revised: 07/14/2022] [Accepted: 07/14/2022] [Indexed: 11/29/2022]
Abstract
Magnetic clusters have attracted great attention and interest due to their novel electronic properties, and they have potential applications in nanoscale information storage devices and spintronics. The interaction between magnetic clusters and substrates is still one of the challenging research focuses. Here, by using the density functional theory (DFT), we study the structural stability and magnetic properties of iridium clusters (Irn, n = 3–5) adsorbed on two-dimensional (2D) substrates, such as graphene and hexagonal boron nitride (hBN). We find that the most favorable configurations of free Irn clusters change when adsorbed on 2D substrates. In the meantime, the magnetic moments of the most stable Irn reduce to 53% (graphene) and 23.6% (hBN) compared with those of the free−standing ones. Interestingly, about 12-times enlargement on the magnetic anisotropy energy can be found on hBN substrates. These theoretical results indicate that the cluster–substrate interaction has vital effects on the properties of Irn clusters.
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Affiliation(s)
- Mei Ge
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China; (M.G.); (L.C.); (M.G.)
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
| | - Leiting Chu
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China; (M.G.); (L.C.); (M.G.)
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
| | - Miaomiao Guo
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China; (M.G.); (L.C.); (M.G.)
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
| | - Yan Su
- Key Laboratory of Materials Modification by Laser, Electron, and Ion Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China;
| | - Junfeng Zhang
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China; (M.G.); (L.C.); (M.G.)
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
- Correspondence: ; Tel.: +86-13935705526
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Yu L, Li F. Metal dimers embedded vertically in defect-graphene as gas sensors: a first-principles study. Phys Chem Chem Phys 2022; 24:9842-9847. [PMID: 35439807 DOI: 10.1039/d2cp00672c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A highly symmetric structure of metal dimers embedded in defect-graphene (M2⊥gra) in a perpendicular manner was designed. Five M2⊥gra (M = Co, Ni, Rh, Ir and Pt) monolayers were identified to be stable by density functional theory (DFT) calculations. To investigate the capability of those new structures as gas sensors, the adsorption behavior of ten gas molecules (O2, N2, CO, CO2, NO, NO2, NH3, H2O, H2S and SO2) on M2⊥gra was explored, and the charge transfer, magnetism changes, etc. of these adsorption systems were analyzed. The Ni2⊥gra can be used as a gas sensor for O2 at 500 K by the analysis of electronic and magnetic properties. At room temperature, the Pt2⊥gra is expected to be an excellent CO2 gas selector due to its high selectivity, sensitivity and short recovery time (1.04 × 10-12 s). The electronic and magnetic coupling between the metal atoms in the vertical metal dimers plays an important role in sensing gas molecules. Our work paves a new way to design metal-dimer-based nanomaterials.
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Affiliation(s)
- Linke Yu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
| | - Fengyu Li
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
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Ruiz-Díaz P, Núñez-Valencia C, Muñoz-Navia M, Urrutia-Bañuelos E, Dorantes-Dávila J. Tuning the magnetic anisotropy energy by external electric fields of CoPt dimers deposited on graphene. Phys Chem Chem Phys 2022; 24:9576-9588. [PMID: 35403183 DOI: 10.1039/d2cp00482h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In the framework of first-principles calculations, we comprehensively investigate the external electric-field (EF) manipulation of the magnetic anisotropy energy (MAE) of alloyed CoPt dimers deposited on graphene. In particular, we focus on the possibility of tuning the MAE barriers under the action of external EFs and on the effects of Co-substitution. Among the various considered structures, the lowest-energy configurations were the hollow-upright and top-upright, having the Co-atom closest to the graphene layer. The optimal and higher energy configurations were related to the electronic structure through the local density of states and hybridizations between the transition-metal (TM) atoms of the dimer and graphene. In contrast to Co2/graphene [M. Tanveer, J. Dorantes-Dávila and G. M. Pastor, Phys. Rev. B, 2017, 96(22), 224413.], the CoPt dimer having the hollow-upright ground-state configuration, exhibits a much lower value of the MAE (about |ΔE| ≃ 4.5 meV per atom) and the direction of the magnetization lies in the graphene layer. Moreover, we observe a spin-reorientation transition occurring at εz ≃ 0.5 V Å-1, which opens the possibility of inducing magnetization switching by external electric fields. The microscopic origin of the changes of the MAE associated with changes in the EF has been qualitatively related to the details of the electronic structure by analyzing the local density of states and to the spin-dependent electronic densities close to the Fermi energy. Finally, the role of local environment was quantified by performing electronic structure and magnetic calculations on several higher-energy structure configurations.
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Affiliation(s)
- P Ruiz-Díaz
- Instituto de Física, Universidad Autónoma de San Luis Potosí, 78000 San Luis Potosí, México.
| | - C Núñez-Valencia
- Instituto de Física, Universidad Autónoma de San Luis Potosí, 78000 San Luis Potosí, México.
| | - M Muñoz-Navia
- Universidad de La Ciénega del Estado de Michoacán de Ocampo, Col. Lomas de la Universidad, Avenida Universidad 3000, Sahuayo, Michoacán, México
| | - E Urrutia-Bañuelos
- Departamento de Investigación en Física, Universidad de Sonora, 78000 Sonora, México
| | - J Dorantes-Dávila
- Instituto de Física, Universidad Autónoma de San Luis Potosí, 78000 San Luis Potosí, México.
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Jana S, Chowdhury S, Jana D, Chakrabarti A, Banerjee A. Emergence of magnetic anisotropy by surface adsorption of transition metal dimers on γ-graphyne framework. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:205501. [PMID: 33567421 DOI: 10.1088/1361-648x/abe513] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Accepted: 02/10/2021] [Indexed: 06/12/2023]
Abstract
In this paper a systematic study is carried out to demonstrate the structural stability and magnetic novelty of adsorbing transition metal (TM) dimers (A-B) on graphyne (GY) surface, GY@A-B. Our research points out that the dimers are strongly adsorbed onto GY due to their large natural pores and the electron affinity of the sp-hybridized carbon atoms. Electronic properties of these dimer-graphyne composite systems are of particular importance as they behave as degenerate semiconductors with partial occupation of states atEF. Furthermore, their remarkable spin polarization (>80%) at Fermi energy (EF) can be of paramount importance in spintronics applications. Most of the GY@A-B structures exhibit large magnetic anisotropies as well as magnetic moments along the out-of-plane direction with respect to the GY surface. Particularly, GY@Co-Ir, GY@Ir-Ir and GY@Ir-Os structures possess positive magnetic anisotropic energies (MAE) of 121 meV, 81 meV and 137 meV, respectively, which are comparable to other well-known TM dimer doped systems. The emergence of high MAE can be understood using the second-order perturbation theory on the basis of the strong spin-orbit coupling (SOC) between the two TMs and the degeneracy of their d-orbitals nearEF. A close correspondence between the simulated and the analytical results has been established through our work. Further, a simple estimation shows that, GY@A-B structures have the potential to store data up to 64 PB m-2. These intriguing electronic characteristics along with magnetism suggest GY@A-B to be a promising material for future magnetic storage devices.
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Affiliation(s)
- Susmita Jana
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata-700009, India
| | - Suman Chowdhury
- Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel Street, Moscow-121205, Russia
| | - Debnarayan Jana
- Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata-700009, India
| | - Aparna Chakrabarti
- Human Resources Development Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai-400094, India
| | - Arup Banerjee
- Human Resources Development Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai-400094, India
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Navrátil J, Błoński P, Otyepka M. Large magnetic anisotropy in an OsIr dimer anchored in defective graphene. NANOTECHNOLOGY 2021; 32:230001. [PMID: 33626515 DOI: 10.1088/1361-6528/abe966] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2020] [Accepted: 02/24/2021] [Indexed: 06/12/2023]
Abstract
Single-atom magnets represent the ultimate limit of magnetic data storage. The identification of substrates that anchor atom-sized magnets firmly and, thus, prevent their diffusion and large magnetic anisotropy has been at the centre of intense research efforts for a long time. Using density functional theory we show the binding of transition metal (TM) atoms in defect sites in the graphene lattice: single vacancy and double vacancy, both pristine and decorated by pyridinic nitrogen atoms, are energetically more favourable than away from the centre of defects, which could be used for engineering the position of TMs with atomic precision. Relativistic calculations revealed magnetic anisotropy energy (MAE) of ∼10 meV for Ir@NSV with an easy axis parallel to the graphene plane. MAE can be remarkably boosted to 50 meV for OsIr@NSV with the easy axis perpendicular to the graphene plane, which paves the way to the storage density of ∼490 Tb/inch2with the blocking temperature of 14 K assuming the relaxation time of 10 years. Magnetic anisotropy is discussed based on the relativistic electronic structures. The influence of an orbital-dependent on-site Coulomb repulsionUand a non-local correlation functional optB86b-vdW on MAE is also discussed.
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Affiliation(s)
- Jan Navrátil
- Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, tř. 17 listopadu 12, 771 46 Olomouc, Czech Republic
| | - Piotr Błoński
- Regional Centre of Advanced Technologies and Materials, Faculty of Science, Palacký University Olomouc, Šlechtitelů 27, 783 71 Olomouc, Czech Republic
| | - Michal Otyepka
- Regional Centre of Advanced Technologies and Materials, Faculty of Science, Palacký University Olomouc, Šlechtitelů 27, 783 71 Olomouc, Czech Republic
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