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Hu P, Hu P, Vu TD, Li M, Wang S, Ke Y, Zeng X, Mai L, Long Y. Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications. Chem Rev 2023; 123:4353-4415. [PMID: 36972332 PMCID: PMC10141335 DOI: 10.1021/acs.chemrev.2c00546] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
Vanadium oxides with multioxidation states and various crystalline structures offer unique electrical, optical, optoelectronic and magnetic properties, which could be manipulated for various applications. For the past 30 years, significant efforts have been made to study the fundamental science and explore the potential for vanadium oxide materials in ion batteries, water splitting, smart windows, supercapacitors, sensors, and so on. This review focuses on the most recent progress in synthesis methods and applications of some thermodynamically stable and metastable vanadium oxides, including but not limited to V2O3, V3O5, VO2, V3O7, V2O5, V2O2, V6O13, and V4O9. We begin with a tutorial on the phase diagram of the V-O system. The second part is a detailed review covering the crystal structure, the synthesis protocols, and the applications of each vanadium oxide, especially in batteries, catalysts, smart windows, and supercapacitors. We conclude with a brief perspective on how material and device improvements can address current deficiencies. This comprehensive review could accelerate the development of novel vanadium oxide structures in related applications.
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Kucheriv OI, Grygoruk VI, Oliynyk VV, Zagorodnii VV, Launets VL, Rotaru A, Gural'skiy IA. A Vanadium Dioxide‐PMMA Composite For Microwave Radiation Switching. Chempluschem 2022; 87:e202200107. [DOI: 10.1002/cplu.202200107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 05/17/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Olesia I. Kucheriv
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Department of Chemistry UKRAINE
| | - Valery I. Grygoruk
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Viktor V. Oliynyk
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Volodymyr V. Zagorodnii
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Vilen L. Launets
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Aurelian Rotaru
- University of Suceava: Universitatea Stefan cel Mare din Suceava Faculty of Electrical Engineering and Computer Science & Research Center MANSiD UKRAINE
| | - Il'ya A. Gural'skiy
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Department of Chemistry 64 Volodymyrska St. 01601 Kyiv UKRAINE
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Valmianski I, Rodríguez AF, Rodríguez-Álvarez J, García Del Muro M, Wolowiec C, Kronast F, Ramírez JG, Schuller IK, Labarta A, Batlle X. Driving magnetic domains at the nanoscale by interfacial strain-induced proximity. NANOSCALE 2021; 13:4985-4994. [PMID: 33634814 DOI: 10.1039/d0nr08253h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigate the local nanoscale changes of the magnetic anisotropy of a Ni film subject to an inverse magnetostrictive effect by proximity to a V2O3 layer. Using temperature-dependent photoemission electron microscopy (PEEM) combined with X-ray magnetic circular dichroism (XMCD), direct images of the Ni spin alignment across the first-order structural phase transition (SPT) of V2O3 were obtained. We find an abrupt temperature-driven reorientation of the Ni magnetic domains across the SPT, which is associated with a large increase of the coercive field. Moreover, angular dependent ferromagnetic resonance (FMR) shows a remarkable change in the magnetic anisotropy of the Ni film across the SPT of V2O3. Micromagnetic simulations based on these results are in quantitative agreement with the PEEM data. Direct measurements of the lateral correlation length of the Ni domains from XMCD images show an increase of almost one order of magnitude at the SPT compared to room temperature, as well as a broad spatial distribution of the local transition temperatures, thus corroborating the phase coexistence of Ni anisotropies caused by the V2O3 SPT. We show that the rearrangement of the Ni domains is due to strain induced by the oxide layers' structural domains across the SPT. Our results illustrate the use of alternative hybrid systems to manipulate magnetic domains at the nanoscale, which allows for engineering of coercive fields for novel data storage architectures.
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Affiliation(s)
- Ilya Valmianski
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Arantxa Fraile Rodríguez
- Departament de Física de la Matèria Condensada, Universitat de Barcelona, 08028 Barcelona, Spain and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, 08028 Barcelona, Spain.
| | - Javier Rodríguez-Álvarez
- Departament de Física de la Matèria Condensada, Universitat de Barcelona, 08028 Barcelona, Spain and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, 08028 Barcelona, Spain.
| | - Montserrat García Del Muro
- Departament de Física de la Matèria Condensada, Universitat de Barcelona, 08028 Barcelona, Spain and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, 08028 Barcelona, Spain.
| | - Christian Wolowiec
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Florian Kronast
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany
| | | | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA
| | - Amílcar Labarta
- Departament de Física de la Matèria Condensada, Universitat de Barcelona, 08028 Barcelona, Spain and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, 08028 Barcelona, Spain.
| | - Xavier Batlle
- Departament de Física de la Matèria Condensada, Universitat de Barcelona, 08028 Barcelona, Spain and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, 08028 Barcelona, Spain.
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Zhang Y, Xiong W, Chen W, Zheng Y. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives. NANOMATERIALS 2021; 11:nano11020338. [PMID: 33525597 PMCID: PMC7911400 DOI: 10.3390/nano11020338] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Revised: 01/19/2021] [Accepted: 01/20/2021] [Indexed: 01/24/2023]
Abstract
Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed.
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Affiliation(s)
- Yanqing Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weiming Xiong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
| | - Weijin Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Yue Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
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