Two-dimensional β-noble-transition-metal chalcogenide: novel highly stable semiconductors with manifold outstanding optoelectronic properties and strong in-plane anisotropy

In this work, five two-dimensional (2D) noble-transition-metal chalcogenide (NTMC) semiconductors, namely β-NX (N = Au, Ag; X = S, Se, Te), were designed and predicted by first-principles simulations. Structurally, the monolayer β-NX materials have good energetic, mechanical, dynamical, and thermal stability. They contain two inequivalent noble-transition-metal atoms in the unit cell, and the N-X bond comprises a partial ionic bond and a partial covalent bond. Regarding the electronic properties, the β-NX materials are indirect-band-gap semiconductors with appropriate band-gap values. They have tiny electron effective masses. The hole effective masses exhibit significant differences in different directions, indicating strongly anisotropic hole mobility. In addition, the coexistence of linear and square-planar channels means that the diffusion and transport of carriers should be anisotropic. In terms of optical properties, the β-NX materials show high absorption coefficients. The absorption and reflection characteristics reveal strong anisotropy in different directions. Therefore, the β-NX materials are indirect-band-gap semiconductors with good stability, high absorption coefficients, and strong mechanical, electronic, transport, and optical anisotropy. In the future, they could have great potential as 2D semiconductors in nano-electronics and nano-optoelectronics.

Gold-selenide quantum dots supported onto cesium ferrite nanocomposites for the efficient degradation of rhodamine B

In this work, different weight percentage of gold-selenide quantum dots (AuSe QDs) (1.0, 2.5, 5.0 and 7.0 wt.%) were successfully synthesized and decorated on cesium ferrite nanocomposite (Cs2Fe2O4 NC). The as-prepared pure AuSe QDs, pure Cs2Fe2O4 NC, and x wt.% AuSe QDs/Cs2Fe2O4 NC photocatalysts were investigated using different characterization techniques such as nitrogen adsorption desorption isotherms (BET), X-ray diffraction patterns (XRD), transmission electron microscopy (TEM), and UV-vis absorption spectroscopy. The results show that AuSe QDs were uniformly distributed on Cs2Fe2O4NCs surface as spherical dots with an average size of 1.0-8.0 nm. While the Cs2Fe2O4 NCs possess an average size between 10 to 35 nm. The photocatalytic performance of x wt. % AuSe QDs/Cs2Fe2O4NCs were measured through the photodegradation of rhodamine B (RhB) dye as a model water pollutant, under a150 W-Mercury lamp with a filter (JB400) as a simulated source of visible light. The results revealed that the % degradation of RhB increased from 50.0 %, 59.1 %, 76.4 %, and to 99.15 % within 150 min for the pure Cs2Fe2O4, 1.0, 2.5 and 5.0 wt.% AuSe QDs/Cs2Fe2O4 NC photocatalysts, respectively. The 5.0 wt.% AuSe/Cs2Fe2O4 NC sample showed highest photocatalytic activity. The effect of recycling also studied. High photocatalytic performance and superior stability confirmed that the prepared nanocomposites act as good photocatalysts.

Novel 2D-AuSe nanostructures as effective platinum replacement counter electrodes in dye-sensitized solar cells

Studies to improve the efficiency of dye-sensitized solar cells (DSSCs) include, but are not limited to, finding alternatives such as 2D layered materials as replacement counter electrodes (CEs) to the commonly used Pt. Herein, we report for the first time, the use of AuSe as a counter electrode for the reduction of triiodide ions (I₃⁻) to iodide ions (I⁻). The colloidal synthesis of gold selenide nanostructures produced α-AuSe and β-AuSe dominated products as determined by XRD. Electron microscopy showed α-AuSe having belt-like structures while β-AuSe had a plate-like morphology. EDS mapping confirmed the elemental composition and homogeneity of the AuSe CEs. Cyclic voltammetry curves of the AuSe CEs displayed the double set of reduction–oxidation peaks associated with the reactions in the I₃⁻/I⁻ electrolyte and therefore were comparable to the Pt CV curve. The α-AuSe CE showed better electrocatalytic activity with a reduction current of 6.1 mA than that of β-AuSe and Pt CEs, which were 4.2 mA and 4.8 mA, respectively. The peak-to-peak separation (ΔE_pp) for the α-AuSe CE was also more favourable with a value of 532 mV over that of the β-AuSe CE of 739 mV however, both values were larger than that of the Pt CE, which was found to be 468 mV. The EIS and Tafel plot data showed that α-AuSe had the best catalytic activity compared to β-AuSe and was comparable to Pt. The DSSC using α-AuSe as a CE had the highest PCE (6.94%) as compared to Pt (4.89%) and β-AuSe (3.47%). The lower efficiency for Pt was attributed to the poorer fill factor. With these novel results, α-AuSe is an excellent candidate to be used as an alternative CE to Pt in DSSCs.

Studies to improve the efficiency of dye-sensitized solar cells (DSSCs) include, but are not limited to, finding alternatives such as 2D layered materials as replacement counter electrodes (CEs) to the commonly used Pt.

Tuning the Electronic and Optical Properties of the Novel Monolayer Noble-Transition-Metal Dichalcogenides Semiconductor β-AuSe via Strain: A Computational Investigation

The strain-controlled structural, electronic, and optical characteristics of monolayer β-AuSe are systematically studied using first-principles calculations in this paper. For the strain-free monolayer β-AuSe, the structure is dynamically stable and maintains good stability at room temperature. It belongs to the indirect band gap semiconductor, and its valence band maximum (VBM) and conduction band minimum (CBM) consist of hybrid Au-d and Se-p electrons. Au–Se is a partial ionic bond and a partial polarized covalent bond. Meanwhile, lone-pair electrons exist around Se and are located between different layers. Moreover, its optical properties are anisotropic. As for the strained monolayer β-AuSe, it is susceptible to deformation by uniaxial tensile strain. It remains the semiconductor when applying different strains within an extensive range; however, only the biaxial compressive strain is beyond −12%, leading to a semiconductor–semimetal transition. Furthermore, it can maintain relatively stable optical properties under a high strain rate, whereas the change in optical properties is unpredictable when applying different strains. Finally, we suggest that the excellent carrier transport properties of the strain-free monolayer β-AuSe and the stable electronic properties of the strained monolayer β-AuSe originate from the p–d hybridization effect. Therefore, we predict that monolayer β-AuSe is a promising flexible semiconductive photoelectric material in the high-efficiency nano-electronic and nano-optoelectronic fields.

Low thermal conductivity and high performance anisotropic thermoelectric properties of XSe (X = Cu, Ag, Au) monolayers

Combining density functional theory (DFT) and semi-classic Boltzmann transport theory, we report the thermoelectric (TE) performance of a family of two-dimensional (2D) group IB-selenides XSe (X = Cu, Ag, Au). The results show that these monolayers exhibit small and anisotropic phonon velocities (0.98-3.84 km s^-1), large Grüneisen parameters (up to 100), and drastic phonon scattering between the optical and acoustic phonons. These intrinsic properties originate from strong phonon anharmonicity and suppress the heat transport capacity, resulting in low lattice thermal conductivities (12.54 and 1.22 W m^-1 K^-1) along the x- and y-directions for a CuSe monolayer. Among our studied monolayers, the 2D CuSe monolayer possesses the most remarkable TE performance with ultrahigh ZT (3.26) for n-type doping along the y-direction at 300 K. CuSe monolayer can achieve higher thermoelectric conversion efficiency at a lower synthetic preparation cost than the expensive AgSe and AuSe monolayers, and our work provides a theoretical basis for paving the way for further experimental studies.

Quasi one-dimensional van der Waals gold selenide with strong interchain interaction and giant magnetoresistance

The atomic structure of quasi one-dimensional (1D) van der Waals materials can be regarded as the stacking of atomic chains to form thin flakes or nanoribbons, which substantially differentiates them from typical two-dimensional (2D) layered materials and 1D nanotube/nanowire array. Here we present our studies on quasi 1D gold selenide (AuSe) that possesses highly anisotropic crystal structure, excellent electrical conductivity, giant magnetoresistance, and unusual reentrant metallic behavior. The low in-plane symmetry of AuSe gives rise to its high anisotropy of vibrational behavior. In contrast, quasi 1D AuSe exhibits high in-plane electrical conductivity along the directions of both atomic chains and perpendicular one, which can be understood as a result of strong interchain interaction. We found that AuSe exhibits a near quadratic nonsaturating giant magnetoresistance of 1841% with the magnetic field perpendicular to its in-plane. We also observe unusual reentrant metallic behavior, which is caused by the carrier mismatch in the multiband transport. Our works help to establish fundamental understandings on quasi 1D van der Waals semimetallic AuSe and identify it as a new candidate for exploring giant magnetoresistance and compensated semimetals.