1
|
Choi HW, Song KW, Kim SH, Nguyen KT, Eadi SB, Kwon HM, Lee HD. Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics. Sci Rep 2022; 12:1259. [PMID: 35075173 PMCID: PMC8786833 DOI: 10.1038/s41598-022-05150-w] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Accepted: 01/04/2022] [Indexed: 11/09/2022] Open
Abstract
The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc oxide) memristors were investigated for synapse application. The use of the oxide bi-layer memristors, in particular, improved electrical properties such as stability, memristor reliability, and an increase in synaptic weight states. The set voltage of bi-layer IGZO/ZnO memristors was 0.9 V, and the reset voltage was around - 0.7 V, resulting in a low-operating voltage for neuromorphic systems. The oxygen vacancies in the X-ray photoelectron spectroscopy analysis played a role in the modulation of the high-resistance state (HRS) (oxygen-deficient) and the low-resistance state (oxygen-rich) region. The VRESET of the bi-layer IGZO/ZnO memristors was lower than that of a single IGZO, which implied that oxygen-vacancy filaments could be easily ruptured due to the higher oxygen vacancy peak HRS layer. The nonlinearity of the LTP and LTD characteristics in a bi-layer IGZO/ZnO memristor was 6.77% and 11.49%, respectively, compared to those of 20.03% and 51.1% in a single IGZO memristor, respectively. Therefore, the extra ZnO layer in the bi-layer memristor with IGZO was potentially significant and essential to achieve a small set voltage and a reset voltage, and the switching behavior to form the conductive path.
Collapse
Affiliation(s)
- Hyun-Woong Choi
- Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Ki-Woo Song
- Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Seong-Hyun Kim
- Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Kim Thanh Nguyen
- Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Sunil Babu Eadi
- Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Hyuk-Min Kwon
- Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus of Korea Polytechnic College, 41-12, Songwon-Gil, Kongdo-Eup, Anseong, Kyunggi-Do, Republic of Korea.
| | - Hi-Deok Lee
- Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
| |
Collapse
|
2
|
Pd–ninhydrin immobilized on magnetic nanoparticles: synthesis, characterization, and application as a highly efficient and recoverable catalyst for Suzuki–Miyaura and Heck–Mizoroki C–C coupling reactions. JOURNAL OF THE IRANIAN CHEMICAL SOCIETY 2020. [DOI: 10.1007/s13738-019-01833-w] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
|