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Qiao S, Li D, Yang L. Heat Flow Guiding and Modulation by Kinks in a Silicon Nanoribbon. NANO LETTERS 2023; 23:8860-8867. [PMID: 37732878 DOI: 10.1021/acs.nanolett.3c01795] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/22/2023]
Abstract
Tailoring heat flow in solids has profound implications for the innovation of functional thermal devices. However, the current methods face technological challenges related to system complexity, material stability, and operating temperature. In this study, we demonstrated efficient heat flow modulation in a single material without a phase transition, using a simple and entirely material-independent strategy, kinked nanostructure patterning, at near-ambient temperature. By carefully controlling the kink arm length and kink angle of the Si nanoribbons, we achieved a thermal conductivity modulation of up to ∼20%. Our theoretical modeling showed that this modulation results from the competing roles of phonon backscattering and open view channels on heat transport. We also build a regime map based on the existence of an open view channel and provide concrete design guidelines for thermal conductivity modulation considering the kink angle and arm length. This study opens up new opportunities for efficient heat flow manipulation through nanostructure patterning.
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Affiliation(s)
- Shuo Qiao
- Department of Advanced Manufacturing and Robotics, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Deyu Li
- Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Lin Yang
- Department of Advanced Manufacturing and Robotics, College of Engineering, Peking University, Beijing 100871, People's Republic of China
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Wang S, Xiao Y, Chen Q, Hao Q. Engineering thermal transport within Si thin films: The impact of nanoslot alignment and ion implantation. iScience 2022; 25:105386. [PMID: 36345333 PMCID: PMC9636053 DOI: 10.1016/j.isci.2022.105386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2022] [Revised: 09/24/2022] [Accepted: 10/14/2022] [Indexed: 11/09/2022] Open
Abstract
In recent years, nanoporous Si films have been intensively studied for their potential applications in thermoelectrics and the thermal management of devices. To minimize the thermal conductivity, ultrafine nanoporous patterns are required but the smallest structure size is largely limited by the spatial resolution of the employed nanofabrication techniques. Along this line, an effectively smaller characteristic length of a nanoporous film can be achieved with offset nanoslot patterns. Compared with periodic circular pores, the nanoslot pattern can achieve an even lower thermal conductivity, where a much smaller porosity is required using ultra-narrow nanoslots. The obtained low thermal conductivity can be understood from the thermally dead volume revealed by phonon Monte Carlo simulations. To further minimize the contribution from short-wavelength phonons, an additional 25% thermal conductivity reduction can be achieved with Ga ions implanted using a focused ion beam.
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Affiliation(s)
- Sien Wang
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ 85721-0119, USA
| | - Yue Xiao
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ 85721-0119, USA
| | - Qiyu Chen
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ 85721-0119, USA
| | - Qing Hao
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ 85721-0119, USA
- Corresponding author
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Malhotra A, Tutuncuoglu G, Kommandur S, Creamer P, Rajan A, Mohabir A, Yee S, Filler MA, Maldovan M. Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires. ACS APPLIED MATERIALS & INTERFACES 2022; 14:1740-1746. [PMID: 34931792 DOI: 10.1021/acsami.1c20242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We study the thermal conductivity of diameter-modulated Si nanowires to understand the impact of different nanoscale transport mechanisms as a function of nanowire morphology. Our investigation couples transient suspended microbridge measurements of diameter-modulated Si nanowires synthesized via vapor-liquid-solid growth and dopant-selective etching with predictive Boltzmann transport modeling. We show that the presence of a low thermal conductivity phase (i.e., porosity) dominates the reduction in effective thermal conductivity and is supplemented by increased phonon-boundary scattering. The relative contributions of both mechanisms depend on the details of the nanoscale morphology. Our findings provide valuable insights into the factors that govern thermal conduction in complex nanoscale materials.
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Affiliation(s)
- Abhinav Malhotra
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Gozde Tutuncuoglu
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- Currently at Electrical and Computer Engineering Department, Wayne State University, Detroit, Michigan 48202, United States
| | - Sampath Kommandur
- G.W.W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Patrick Creamer
- G.W.W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Aravindh Rajan
- G.W.W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Amar Mohabir
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shannon Yee
- G.W.W. School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Michael A Filler
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Martin Maldovan
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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4
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Hori T. Structural optimization of silicon thin film for thermoelectric materials. Sci Rep 2021; 11:22648. [PMID: 34811398 PMCID: PMC8608789 DOI: 10.1038/s41598-021-01855-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Accepted: 11/07/2021] [Indexed: 11/13/2022] Open
Abstract
The method to optimize nanostructures of silicon thin films as thermoelectric materials is developed. The simulated annealing method is utilized for predicting the optimized structure. The mean free path and thermal conductivity of thin films, which are the objective function of optimization, is evaluated by using phonon transport simulations and lattice dynamics calculations. In small systems composed of square lattices, the simulated annealing method successfully predicts optimized structure corroborated by an exhaustive search. This fact indicates that the simulated annealing method is an effective tool for optimizing nanostructured thin films as thermoelectric materials.
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Affiliation(s)
- Takuma Hori
- Department of Mechanical Systems Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan.
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Yang L, Huh D, Ning R, Rapp V, Zeng Y, Liu Y, Ju S, Tao Y, Jiang Y, Beak J, Leem J, Kaur S, Lee H, Zheng X, Prasher RS. High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K. Nat Commun 2021; 12:3926. [PMID: 34168136 PMCID: PMC8225643 DOI: 10.1038/s41467-021-24208-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 06/07/2021] [Indexed: 02/05/2023] Open
Abstract
Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.
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Affiliation(s)
- Lin Yang
- grid.184769.50000 0001 2231 4551Energy Technology Area, Lawrence Berkeley National Laboratory, Berkeley, CA USA
| | - Daihong Huh
- grid.168010.e0000000419368956Department of Materials Science and Engineering, Stanford University, Stanford, CA USA ,grid.222754.40000 0001 0840 2678Department of Material Science and Engineering, Korea University, Seoul, Republic of Korea
| | - Rui Ning
- grid.168010.e0000000419368956Department of Materials Science and Engineering, Stanford University, Stanford, CA USA
| | - Vi Rapp
- grid.184769.50000 0001 2231 4551Energy Technology Area, Lawrence Berkeley National Laboratory, Berkeley, CA USA
| | - Yuqiang Zeng
- grid.184769.50000 0001 2231 4551Energy Technology Area, Lawrence Berkeley National Laboratory, Berkeley, CA USA
| | - Yunzhi Liu
- grid.168010.e0000000419368956Department of Materials Science and Engineering, Stanford University, Stanford, CA USA
| | - Sucheol Ju
- grid.222754.40000 0001 0840 2678Department of Material Science and Engineering, Korea University, Seoul, Republic of Korea
| | - Yi Tao
- grid.152326.10000 0001 2264 7217Department of Mechanical Engineering, Vanderbilt University, Nashville, TN USA
| | - Yue Jiang
- grid.168010.e0000000419368956Department of Mechanical Engineering, Stanford University, Stanford, CA USA
| | - Jihyun Beak
- grid.168010.e0000000419368956Department of Mechanical Engineering, Stanford University, Stanford, CA USA
| | - Juyoung Leem
- grid.168010.e0000000419368956Department of Mechanical Engineering, Stanford University, Stanford, CA USA
| | - Sumanjeet Kaur
- grid.184769.50000 0001 2231 4551Energy Technology Area, Lawrence Berkeley National Laboratory, Berkeley, CA USA
| | - Heon Lee
- grid.222754.40000 0001 0840 2678Department of Material Science and Engineering, Korea University, Seoul, Republic of Korea
| | - Xiaolin Zheng
- grid.168010.e0000000419368956Department of Mechanical Engineering, Stanford University, Stanford, CA USA
| | - Ravi S. Prasher
- grid.184769.50000 0001 2231 4551Energy Technology Area, Lawrence Berkeley National Laboratory, Berkeley, CA USA ,grid.47840.3f0000 0001 2181 7878Department of Mechanical Engineering, University of California, Berkeley, CA USA
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