Size-dependent exciton substructure in CdSe nanoplatelets and its relation to photoluminescence dynamics

Hole Relaxation Bottlenecks in CdSe/CdTe/CdSe Lateral Heterostructures Lead to Bicolor Emission

Concentric lateral CdSe/CdTe/CdSe heterostructures show bicolor photoluminescence from both a red charge transfer band of the CdSe/CdTe interface and a green fluorescence from CdSe. This work uses visible and near-infrared transient spectroscopy measurements to demonstrate that the deviation from Kasha's rule arises from a hole relaxation bottleneck from CdSe to CdTe. Hole transfer can take up to 1 ns, which permits radiative relaxation of excitons remaining in CdSe. Simulations indicate that the hole relaxation bottleneck arises due to the sparse density of states and poor spatial overlap of hole states at energies near the CdSe band edge. The divergent kinetics of transfer for band edge and hot holes is exploited to vary the ratio of green and red photoluminescence with excitation wavelength, providing another knob to control emission color. These findings support the use of lateral heterojunctions as a method for slowing carrier relaxation in two-dimensional materials.

Possibility of Exciton Bose-Einstein Condensation in CdSe Nanoplatelets

The quasi-two-dimensional exciton subsystem in CdSe nanoplatelets is considered. It is theoretically shown that Bose-Einstein condensation (BEC) of excitons is possible at a nonzero temperature in the approximation of an ideal Bose gas and in the presence of an "energy gap" between the ground and the first excited states of the two-dimensional exciton center of inertia of the translational motion. The condensation temperature (Tc) increases with the width of the "gap" between the ground and the first excited levels of size quantization. It is shown that when the screening effect of free electrons and holes on bound excitons is considered, the BEC temperature of the exciton subsystem increases as compared to the case where this effect is absent. The energy spectrum of the exciton condensate in a CdSe nanoplate is calculated within the framework of the weakly nonideal Bose gas approximation, considering the specifics of two-dimensional Born scattering.

2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration

The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.

Mechanistic insight into CdSe nanoplatelet-sensitized upconversion: size and stacking induced effects

CdSe nanoplatelets (NPLs) have been reported as triplet sensitizers for photon upconversion (UC). However, their UC quantum yields lag behind more conventional systems. Here, we take advantage of their one-dimensional quantum confinement to decouple effects caused by the energetic driving force and lateral size. A surprising anti-correlation between the power threshold I_th and the UC quantum yield based on the NPL size is found. We attribute this result to two distinct triplet-triplet annihilation mechanisms based on the NPL lateral dimension and degree of NPL stacking-mediated either by molecular diffusion or triplet energy diffusion.

Exciton States and Optical Absorption in CdSe and PbS Nanoplatelets

The exciton states and their influence on the optical absorption spectrum of CdSe and PbS nanoplatelets (NPLs) are considered theoretically in this paper. The problem is discussed in cases of strong, intermediate, and weak size quantization regimes of charge carrier motion in NPLs. For each size quantization regime, the corresponding potential that adequately describes the electron-hole interaction in this mode of space quantization of charge carriers is chosen. The single-particle energy spectra and corresponding wave functions for strong intermediate and weak size quantization regimes have been revealed. The dependence of material parameters on the number of monolayers in the sample has been considered. The related selection rules and the dependence of the absorption coefficient on the frequency and polarization direction of the incident light wave were obtained. The interband transition threshold energy dependencies were obtained for each size quantization regime. The effect of dielectric coefficient mismatch and different models of electron-hole interaction potentials have been studied in CdSe and PbS NPLs. It is also shown that with an increase in the linear dimensions of the structure, the threshold frequency of absorption decreases. The binding energies and absorption coefficient results for NPL with different thicknesses agree with the experimental data. The values of the absorption exciton peaks measured experimentally are close to our calculated values for CdSe and PbS samples.

Near-Field Energy Transfer into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors

Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Förster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al₂ O₃ ) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d^-1 with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.

Tuning optoelectronic response of lateral core-alloyed crown nanoplatelets: type-II CdSe-CdSe1-xTex

We present a theoretical study showing that the exciton emission in the CdSe-CdSe_1-xTe_xcore-alloyed crown heterostructure results from the tunable quasi-type II to pure type II behavior by adjusting the Te to Se ratio. We suggest that the direct crown exciton or interface indirect exciton or a dual emission can be tuned due to the altered conduction band offset. We also found that these different emissions are red-shifted with increasing the nanoplatelets (NPLs) monolayer (ML) thickness due to the quantum confinement effect. The double exciton emission develops caused by the band bowing effect occurring in the alloyed crown. The band bowing is originated from the difference between the bonding nature of the Se and Te orbitals with the Cd orbitals in the conduction band edge states. We also found that the band bowing is sensitive on the alloyed-crown ML thickness and the in-plane strain due to hybridization magnitude between the cation (Cd) and anion (Se, Te). Our results are in accord with the available experimental data. We propose the CdSe-CdSe_1-xTe_xcore-alloyed crown NPLs as a promising contender for the near-infrared-emitting heterostructures preparation used for light-harvesting applications.

Correction: Tuning trion binding energy and oscillator strength in a laterally finite 2D system: CdSe nanoplatelets as a model system for trion properties

Correction for 'Tuning trion binding energy and oscillator strength in a laterally finite 2D system: CdSe nanoplatelets as a model system for trion properties' by Sabrine Ayari et al., Nanoscale, 2020, 12, 14448-14458, DOI: .

Influence of Shape Anisotropy on the Emission of Low-Dimensional Semiconductors

The emergence of precise and scalable synthetic methods for producing anisotropic semiconductor nanostructures provides opportunities to tune the photophysical properties of these particles beyond their band gaps, and to incorporate them into higher-order structures with macroscopic anisotropic responses to electric and optical fields. This perspective article discusses some of these opportunities in the context of colloidal semiconductor nanoplatelets, with a focus on the influence of confinement anisotropy on processes that dictate the emission.

Tuning exciton diffusion, mobility and emission line width in CdSe nanoplatelets via lateral size

We investigate the lateral size tunability of the exciton diffusion coefficient and mobility in colloidal quantum wells by means of line width analysis and theoretical modeling. We show that the exciton diffusion coefficient and mobility in laterally finite 2D systems like CdSe nanoplatelets can be tuned via the lateral size and aspect ratio. The coupling to acoustic and optical phonons can be altered via the lateral size and aspect ratio of the platelets. Subsequently the exciton diffusion and mobility become tunable since these phonon scattering processes determine and limit the mobility. At 4 K the exciton mobility increases from ∼ 4 × 103 cm2 V-1 s-1 to more than 1.4 × 104 cm2 V-1 s-1 for large platelets, while there are weaker changes with size and the mobility is around 8 × 101 cm2 V-1 s-1 for large platelets at room temperature. In turn at 4 K the exciton diffusion coefficient increases with the lateral size from ∼ 1.3 cm2 s-1 to ∼ 5 cm2 s-1, while it is around half the value for large platelets at room temperature. Our experimental results are in good agreement with theoretical modeling, showing a lateral size and aspect ratio dependence. The findings open up the possibility for materials with tunable exciton mobility, diffusion or emission line width, but quasi constant transition energy. High exciton mobility is desirable e.g. for solar cells and allows efficient excitation harvesting and extraction.

Intersubband Relaxation in CdSe Colloidal Quantum Wells

The dynamics of intersubband relaxation are critical to quantum well technologies such as quantum cascade lasers and quantum well infrared photodetectors. Here, intersubband relaxation in CdSe colloidal quantum wells, or nanoplatelets, is studied via pump-push-probe transient spectroscopy. An initial interband pump pulse is followed by a secondary infrared push excitation, resonant with intersubband absorption, which promotes electrons from the first conduction band of the quantum well to the second conduction band. A probe pulse monitors subsequent electron cooling to the band edge of the quantum well. Using this technique, intersubband relaxation is studied as a function of critical variables such as colloidal quantum well size and thickness, surface ligand chemistry, temperature, and excitation pulse intensity. Larger quantum well sizes, judicious selection of surface ligand chemistry (e.g., thiolates), low temperatures, and elevated push pulse fluences slow intersubband relaxation. However, compared to resonant intraband relaxation in colloidal quantum dots (up to hundreds of picoseconds), intersubband relaxation in colloidal quantum wells is rapid (<1 ps) under all examined conditions. These experiments indicate that rapid relaxation is driven by both LO phonon and surface scattering. The short time scale of relaxation observed in these materials may hinder intersubband technologies such as mid-infrared detectors, although such rapid relaxation may prove valuable in optical switching.

Trion Emission Dominates the Low-Temperature Photoluminescence of CdSe Nanoplatelets

Colloidal nanoplatelets (NPLs) are atomically flat, quasi-two-dimensional particles of a semiconductor. Despite intense interest in their optical properties, several observations concerning the emission of CdSe NPLs remain puzzling. While their ensemble photoluminescence spectrum consists of a single narrow peak at room temperature, two distinct emission features appear at temperatures below ∼160 K. Several competing explanations for the origin of this two-color emission have been proposed. Here, we present temperature- and time-dependent experiments demonstrating that the two emission colors are due to two subpopulations of uncharged and charged NPLs. We study dilute films of isolated NPLs, thus excluding any explanation relying on collective effects due to NPL stacking. Temperature-dependent measurements explain that trion emission from charged NPLs is bright at cryogenic temperatures, while temperature activation of nonradiative Auger recombination quenches the trion emission above 160 K. Our findings clarify many of the questions surrounding the photoluminescence of CdSe NPLs.

Tuning trion binding energy and oscillator strength in a laterally finite 2D system: CdSe nanoplatelets as a model system for trion properties

We present a theoretical study combined with experimental validations demonstrating that CdSe nanoplatelets are a model system to investigate the tunability of trions and excitons in laterally finite 2D semiconductors. Our results show that the trion binding energy can be tuned from 36 meV to 18 meV with the lateral size and decreasing aspect ratio, while the oscillator strength ratio of trions to excitons decreases. In contrast to conventional quantum dots, the trion oscillator strength in a nanoplatelet at low temperature is smaller than that of the exciton. The trion and exciton Bohr radii become lateral size tunable, e.g. from ∼3.5 to 4.8 nm for the trion. We show that dielectric screening has strong impact on these properties. By theoretical modeling of transition energies, binding energies and oscillator strength of trions and excitons and comparison with experimental findings, we demonstrate that these properties are lateral size and aspect ratio tunable and can be engineered by dielectric confinement, allowing to suppress e.g. detrimental trion emission in devices. Our results strongly impact further in-depth studies, as the demonstrated lateral size tunable trion and exciton manifold is expected to influence properties like gain mechanisms, lasing, quantum efficiency and transport even at room temperature due to the high and tunable trion binding energies.

Two-photon based pulse autocorrelation with CdSe nanoplatelets

We investigate broadband two-photon absorption autocorrelators based on II-VI semiconductor nanoplatelets as an alternative to common second harmonic generation based techniques. As compared to bulk materials the exceptionally high enhancement of two-photon absorption in these 2D structures results in very efficient two-photon absorption based autocorrelation detected via PL emission. We compare the results with TPA autocorrelation in CdS bulk as well as SHG based autocorrelation in β-barium borate. We show that CdSe nanoplatelet based autocorrelation can exceed the efficiency of conventional methods by two orders in magnitude, especially for short interaction length, and allows a precise pulse-width determination. We demonstrate that very high two-photon absorption cross sections of the nanoplatelets are the basis for this effective TPA autocorrelation. Based on our results with II-VI nanoplatelets efficient broadband autocorrelation with more than ∼100 nm bandwidth and very high sensitivity seems feasible.