1
|
Jeon DY, Park J, Park SJ, Kim GT. Junctionless Electric-Double-Layer MoS 2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel. ACS APPLIED MATERIALS & INTERFACES 2023; 15:8298-8304. [PMID: 36740775 DOI: 10.1021/acsami.2c19596] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel. A double-gated MoS2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 104 on-off current ratio, a 70 mV dec-1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS2 transistors with an electrostatically highly doped channel.
Collapse
Affiliation(s)
- Dae-Young Jeon
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do55324, South Korea
- Department of Electrical Engineering, Gyeongsang National University, Jinju52828, Gyeongnam, South Korea
| | - Jimin Park
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do55324, South Korea
| | - So Jeong Park
- School of Electrical Engineering, Korea University, Seoul136-701, South Korea
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University, Seoul136-701, South Korea
| |
Collapse
|
2
|
Cho W, Rafi H, Cho S, Balijepalli A, Zestos AG. High resolution voltammetric and field-effect transistor readout of carbon fiber microelectrode biosensors. SENSORS & DIAGNOSTICS 2022; 1:460-464. [PMID: 35647552 PMCID: PMC9119317 DOI: 10.1039/d2sd00023g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Rapid and sensitive pH measurements with increased spatiotemporal resolution are imperative to probe neurochemical signals and illuminate brain function. We interfaced carbon fiber microelectrode (CFME) sensors with both fast scan cyclic voltammetry (FSCV) and field-effect transistor (FET) transducers for dynamic pH measurements. The electrochemical oxidation and reduction of functional groups on the surface of CFMEs affect their response over a physiologically relevant pH range. When measured with FET transducers, the sensitivity of the measurements over the measured pH range was found to be (101 ± 18) mV, which exceeded the Nernstian value of 59 mV by approximately 70%. Finally, we validated the functionality of CFMEs as pH sensors with FSCV ex vivo in rat brain coronal slices with exogenously applied solutions of varying pH values indicating that potential in vivo study is feasible. Highly sensitive CFMEs as a pH sensor in tandem with both FET and FSCV methods having ex vivo sensing capability is demonstrated.![]()
Collapse
Affiliation(s)
- Whirang Cho
- Department of Chemistry, American University, Washington, D.C. 20016, USA
- Biophysical and Biomedical Measurement Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg 20899, USA
| | - Harmain Rafi
- Department of Chemistry, American University, Washington, D.C. 20016, USA
| | - Seulki Cho
- Biophysical and Biomedical Measurement Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg 20899, USA
| | - Arvind Balijepalli
- Biophysical and Biomedical Measurement Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg 20899, USA
| | | |
Collapse
|
3
|
Recent Advances in Two-Dimensional Transition Metal Dichalcogenide Nanocomposites Biosensors for Virus Detection before and during COVID-19 Outbreak. JOURNAL OF COMPOSITES SCIENCE 2021. [DOI: 10.3390/jcs5070190] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The deadly Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-CoV-2) outbreak has become one of the most challenging pandemics in the last century. Clinical diagnosis reports a high infection rate within a large population and a rapid mutation rate upon every individual infection. The polymerase chain reaction has been a powerful and gold standard molecular diagnostic technique over the past few decades and hence a promising tool to detect the SARS-CoV-2 nucleic acid sequences. However, it can be costly and involved in complicated processes with a high demand for on-site tests. This pandemic emphasizes the critical need for designing cost-effective and fast diagnosis strategies to prevent a potential viral source by ultrasensitive and selective biosensors. Two-dimensional (2D) transition metal dichalcogenide (TMD) nanocomposites have been developed with unique physical and chemical properties crucial for building up nucleic acid and protein biosensors. In this review, we cover various types of 2D TMD biosensors available for virus detection via the mechanisms of photoluminescence/optical, field-effect transistor, surface plasmon resonance, and electrochemical signals. We summarize the current state-of-the-art applications of 2D TMD nanocomposite systems for sensing proteins/nucleic acid from different types of lethal viruses. Finally, we identify and discuss the advantages and limitations of TMD-based nanocomposites biosensors for viral recognition.
Collapse
|
4
|
Computational screening toward quantum capacitance of transition-metals and vacancy doped/co-doped graphene as electrode of supercapacitors. Electrochim Acta 2021. [DOI: 10.1016/j.electacta.2021.138432] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
|
5
|
Le ST, Cho S, Richter CA, Balijepalli A. Optimal field-effect transistor operation for high-resolution biochemical measurements. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:030901. [PMID: 33820034 PMCID: PMC8353375 DOI: 10.1063/5.0025847] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2020] [Accepted: 02/21/2021] [Indexed: 06/12/2023]
Abstract
Field-effect transistors (FETs) are powerful tools for sensitive measurements of numerous biomarkers (e.g., proteins, nucleic acids, and antigen) and gaseous species. Most research studies in this field focused on building discrete devices with high performance. We show that instrumentation that is commonly used in multiple areas of physics and engineering can greatly improve the performance of measurement systems that embed FET-based transducers for biological applications. We review the state-of-the-art instrumentation in the field as applied to sensing with FETs. We show how high-performance dual-gate 2D FETs that we recently developed, when operated using closed-loop proportional-integral-derivative control, can drastically improve both the sensitivity and resolution. We further show that this closed-loop control approach can be extended to commonly used single-gate silicon FETs. The generalizability of the results will allow their application to virtually any previously developed FET-based sensor. Finally, we provide insight into further optimization and performance benefits that can be extracted by using the closed-loop feedback approach for applications in biosensing.
Collapse
Affiliation(s)
- Son T Le
- Alternative Computing Group, Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Theiss Research, La Jolla, CA 92037, USA
| | - Seulki Cho
- Biophysics Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Curt A. Richter
- Alternative Computing Group, Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Arvind Balijepalli
- Biophysics Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| |
Collapse
|
6
|
Le ST, Morris MA, Cardone A, Guros NB, Klauda JB, Sperling BA, Richter CA, Pant HC, Balijepalli A. Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors. Analyst 2020; 145:2925-2936. [PMID: 32159165 PMCID: PMC7443690 DOI: 10.1039/c9an01804b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We show that commercially sourced n-channel silicon field-effect transistors (nFETs) operating above their threshold voltage with closed loop feedback to maintain a constant channel current allow a pH readout resolution of (7.2 ± 0.3) × 10-3 at a bandwidth of 10 Hz, or ≈3-fold better than the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to measure the change in solution pH arising from the activity of a pathological form of the kinase Cdk5, an enzyme implicated in Alzheimer's disease, and showed quantitative agreement with previous measurements. The improved pH resolution was realized while the devices were operated in a remote sensing configuration with the pH sensing element off-chip and connected electrically to the FET gate terminal. We compared these results with those measured by using a custom-built dual-gate 2D field-effect transistor (dg2DFET) fabricated with 2D semi-conducting MoS2 channels and a signal amplification of 8. Under identical solution conditions the nFET performance approached the dg2DFETs pH resolution of (3.9 ± 0.7) × 10-3. Finally, using the nFETs, we demonstrated the effectiveness of a custom polypeptide, p5, as a therapeutic agent in restoring the function of Cdk5. We expect that the straight-forward modifications to commercially sourced nFETs demonstrated here will lower the barrier to widespread adoption of these remote-gate devices and enable sensitive bioanalytical measurements for high throughput screening in drug discovery and precision medicine applications.
Collapse
Affiliation(s)
- Son T. Le
- Alternative Computing Group, Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Theiss Research, La Jolla, CA 92037
| | - Michelle A. Morris
- Biophysics Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Antonio Cardone
- Information Systems Group, Software and Systems Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- University of Maryland Institute for Advanced Computer Studies, University of Maryland, College Park, MD 20742, USA
| | - Nicholas B. Guros
- Biophysics Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD 20742, USA
| | - Jeffery B. Klauda
- Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD 20742, USA
| | - Brent A. Sperling
- Chemical Process and Nuclear Measurements Group, Chemical Sciences Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Curt A. Richter
- Alternative Computing Group, Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Harish C. Pant
- National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, MD 20892, USA
| | - Arvind Balijepalli
- Biophysics Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| |
Collapse
|
7
|
Chen X, Liu C, Mao S. Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors. NANO-MICRO LETTERS 2020; 12:95. [PMID: 34138098 PMCID: PMC7770660 DOI: 10.1007/s40820-020-00438-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2020] [Accepted: 03/23/2020] [Indexed: 05/27/2023]
Abstract
Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) attract significant attention as FET channel due to their unique structures and outstanding properties. With the booming of studies on TMDC FETs, we aim to give a timely review on TMDC-based FET sensors for environmental analysis in different media. First, theoretical basics on TMDC and FET sensor are introduced. Then, recent advances of TMDC FET sensor for pollutant detection in gaseous and aqueous media are, respectively, discussed. At last, future perspectives and challenges in practical application and commercialization are given for TMDC FET sensors. This article provides an overview on TMDC sensors for a wide variety of analytes with an emphasize on the increasing demand of advanced sensing technologies in environmental analysis.
Collapse
Affiliation(s)
- Xiaoyan Chen
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, USA
| | - Chengbin Liu
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China
| | - Shun Mao
- Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai, 200092, People's Republic of China.
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai, 200092, People's Republic of China.
| |
Collapse
|