Low-reflection, (110)-orientation-preferred CsPbBr3 nanonet films for application in high-performance perovskite photodetectors

Lead-Free Metal Halide Perovskite Nanocrystals: From Fundamentals to Applications

Lead (Pb) halide perovskite nanocrystals, with the general formula APbX₃ , where A=CH₃ NH³⁺ , CH(NH₂ )²⁺ , or Cs⁺ and X=Cl^- , Br^- , or I^- , have emerged as a class of materials with promising properties due to their remarkable optical properties and solar cell performance. However, important issues still need to be addressed to enable practical applications of these materials, such as instability, mass production, and Pb toxicity. Recent studies have carried out the replacement of Pb by various less-toxic cations as Sn, Ge, Sb, and Bi. This variety of chemical compositions provide Pb-free perovskite and metal halide nanostructures with a wide spectral range, in addition to being considered less toxic, therefore having greater practical applicability. Highlighting the necessity to address and solve the toxicity problems related to Pb-containing perovskite, this review considers the prospects of the Pb-free perovskite, involving synthesis methods, and properties of them, including advantages, disadvantages, and applications.

The Dissociation of Exciton During the Lasing of a Single CsPbBr3 Microplate

In this work, the lasing of a single CsPbBr₃ microplate (MP) fabricated with chemical vapor deposition (CVD) is investigated from the viewpoint of exciton dissociation characterized with steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL). It is confirmed that the lasing performance is disturbed by the dissociation of excitons. The increase of lasing threshold with temperature originates from the dissociation of free excitons (FEs) to localized carriers (LCs), and the lasing failure is mostly ascribed to the dissociation of FEs to free carriers (FCs). The working temperature of micro/nanolasers based on metal halide perovskites (MHPs) could be raised up to the temperature determined by exciton binding energy while the laser heating effect is dealt with well. These findings advance our understanding on the photophysics of the lasing behaviors of micro/nanocavities based on MHPs and help us promote their performance by having better thermal management.

Lead-Free Copper-Based Perovskite Nanonets for Deep Ultraviolet Photodetectors with High Stability and Better Performance

Considering practical application and commercialization, the research of non-toxic and stable halide perovskite and its application in the field of photoelectric detection have received great attention. However, there are relatively few studies on deep ultraviolet photodetectors, and the perovskite films prepared by traditional spin-coating method have disadvantages such as uneven grain size and irregular agglomeration, which limit their device performance. Herein, uniform and ordered Cs₃Cu₂I₅ nanonet arrays are fabricated based on monolayer colloidal crystal (MCC) templates prepared with 1 μm polystyrene (PS) spheres, which enhance light-harvesting ability. Furthermore, the performance of the lateral photodetector (PD) is significantly enhanced when using Cs₃Cu₂I₅ nanonet compared to the pure Cs₃Cu₂I₅ film. Under deep ultraviolet light, the Cs₃Cu₂I₅ nanonet PD exhibits a high light responsivity of 1.66 AW^-1 and a high detection up to 2.48 × 10¹² Jones. Meanwhile, the unencapsulated PD has almost no response to light above 330 nm and shows remarkable stability. The above results prove that Cs₃Cu₂I₅ nanonet can be a great potential light-absorbing layer for solar-blind deep ultraviolet PD, which can be used as light absorption layer of UV solar cell.

Self-Powered CsPbBr3 Perovskite Nanonet Photodetector with a Hollow Vertical Structure

For most commercial photodetectors (PDs), incident light is illuminated from the top or side of the device, but the opaque electrode (gold, copper, or aluminum, etc.) on the top will block part of the light from entering, wasting the efficiency of light utilization. Herein, to solve this issue, we introduced perovskite nanonet PDs with a hollow vertical structure by using a polystyrene microsphere template. Compared with ordinary thin film devices, our reticulated hollow vertical structure devices not only can enable easy entrance of the light from the reticulated hollow surface of the devices but also can reduce the reflection of light, resulting in better device performance. For our optimal CsPbBr₃ perovskite PDs, high photoelectric performances were achieved with the switching ratio up to 4.17 × 10⁴, a detectivity of 7.44 × 10¹¹ Jones, a linear dynamic range of 108 dB, and the rise/fall time of 0.1/0.16 ms. More importantly, because of the reticulated hollow structure, our device performance showed less reduction when the incident light was illuminated from the top than from the bottom. These results may be of great reference value for improving the photoelectric performance of silicon-based devices or deep ultraviolet PDs.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Single-Layer ZnO Hollow Hemispheres Enable High-Performance Self-Powered Perovskite Photodetector for Optical Communication

The carrier transport layer with reflection reduction morphology has attracted extensive attention for improving the utilization of light. Herein, we introduced single-layer hollow ZnO hemisphere arrays (ZHAs) behaving light trapping effect as the electron transport layer in perovskite photodetectors (PDs). The single-layer hollow ZHAs can not only reduce the reflection, but also widen the angle of the effective incident light and especially transfer the distribution of the optical field from the ZnO/FTO interface to the perovskite active layer confirmed by the 3D finite-difference time-domain simulation. These merits benefit for the generation, transport and separation of carriers, improving the light utilization efficiency. Finally, our optimized FTO/ZHA/CsPbBr₃/carbon structure PDs showed high self-powered performance with a linear dynamic range of 120.3 dB, a detectivity of 4.2 × 10¹² Jones, rise/fall time of 13/28 µs and the f_-3 dB of up to 28 kHz. Benefiting from the high device performance, the PD was demonstrated to the application in the directional transmission of encrypted files as the signal receiving port with super high accuracy. This work uniquely utilizes the features of high-performance self-powered perovskite PDs in optical communication, paving the path to wide applications of all-inorganic perovskite PDs.

In situ polymer-covered annealing strategy for high-efficiency carbon-electrode CsPbIBr2 solar cells

An in situ polymer-covered annealing strategy is proposed to regulate the crystallization behavior of one-step-deposited CsPbIBr2 film, which leads to a film with many superior properties. A carbon-electrode perovskite solar cell fabricated with such a film yields a significantly enhanced efficiency from 8.71% to 10.50%.

Enhanced Spatial Light Confinement of All Inorganic Perovskite Photodetectors Based on Hybrid Plasmonic Nanostructures

3D incident light confinement by radical electromagnetic fields offers a facile and novel way to break through the performance limit of inorganic perovskite CsPbBr₃ quantum dots (QDs). Herein, metallic nanoparticles decorated anodic aluminum oxide (AAO) hybrid plasmonic nanostructures with geometric control are first proposed for cyclic light utilization of perovskite photodetectors, enabled by spatially extended light confinement. The drastic multiple interference induced by plasmonic coupling within AAO matrixes are generated as a function of pore sizes, which can effectively collect the transmitted photons back to the surface. In addition, the self-assembled metallic nanoparticles simultaneously concentrate the incident and reflected light beams into the CsPbBr₃ QD layers. The light confinement inherently stems from the metallic nanoparticles due to the variation of the near surface electromagnetic fields. As a result, perovskite photodetectors based on Al nanoparticles/AAO hybrid plasmonic nanostructures with a pore size of 220 nm exhibit enhanced photoresponse behavior with remarkably increased photocurrent by ≈43× and maintain low dark current under 490 nm light illumination at 1 V.

All-inorganic copper(i)-based ternary metal halides: promising materials toward optoelectronics

All-inorganic lead halides, including CsPbX₃ (X = Cl, Br, I), have become important candidate materials in the field of optoelectronics. However, the inherent toxicity of metal lead and poor material stability have hindered further applications of traditional metal halides, CsPbX₃. Therefore, copper(i)-based ternary metal halides are expected to become promising substitutes for traditional metal halides because of their nontoxicity, excellent optical properties and good stability under ambient conditions. This article reviews the recent development of all-inorganic low-dimensional copper(i)-based ternary metal halides by introducing their various synthesis methods, crystal structures, properties and their optoelectronic applications. In addition, the prospects for future challenges and the potential significance of copper(i)-based ternary metal halides in optoelectronic fields are presented.

A simple multiple centrifugation method for large-area homogeneous perovskite CsPbBr3 films with optical lasing

Large scale cesium lead-halide (CsPbX₃, X = Cl, Br, and I) perovskite films have become the basis of laser applications.

UV detector based on an FTO/TiO2/MoO3 heterojunction with a potential well trapping electrons in the dark

An FTO/TiO₂/MoO₃ based UV detector has been fabricated through the synthesis of TiO₂ nanowires (NWs) on FTO using the hydrothermal method, the preparation of MoO₃ on TiO₂ NWs by the spin-coating method, after the hydrothermal synthesis, and the preparation of Ag electrodes on the FTO and MoO₃. The detector exhibits an excellent performance of photo-to-dark current ratio of more than two orders of magnitude. This performance is produced because the dark current under 2.2 V bias has been significantly inhibited due to the electronic potential well formed by the energy band distribution while the photocurrent has increased in comparison with FTO/TiO₂ based detectors under the same conditions which also have a higher photo-to-dark current ratio without the MoO₃ content. Not only does this study take advantage of 1D NWs and 2D nanostructures, but it also provides a new way to inhibit the dark current of detectors.