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de Souza Carvalho TA, Magalhaes LF, do Livramento Santos CI, de Freitas TAZ, Carvalho Vale BR, Vale da Fonseca AF, Schiavon MA. Lead-Free Metal Halide Perovskite Nanocrystals: From Fundamentals to Applications. Chemistry 2023; 29:e202202518. [PMID: 36206198 DOI: 10.1002/chem.202202518] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Indexed: 11/22/2022]
Abstract
Lead (Pb) halide perovskite nanocrystals, with the general formula APbX3 , where A=CH3 NH3+ , CH(NH2 )2+ , or Cs+ and X=Cl- , Br- , or I- , have emerged as a class of materials with promising properties due to their remarkable optical properties and solar cell performance. However, important issues still need to be addressed to enable practical applications of these materials, such as instability, mass production, and Pb toxicity. Recent studies have carried out the replacement of Pb by various less-toxic cations as Sn, Ge, Sb, and Bi. This variety of chemical compositions provide Pb-free perovskite and metal halide nanostructures with a wide spectral range, in addition to being considered less toxic, therefore having greater practical applicability. Highlighting the necessity to address and solve the toxicity problems related to Pb-containing perovskite, this review considers the prospects of the Pb-free perovskite, involving synthesis methods, and properties of them, including advantages, disadvantages, and applications.
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Affiliation(s)
- Thaís Adriany de Souza Carvalho
- Departamento de Ciências Naturais (DCNat), Universidade Federal de São João del-Rei (UFSJ), São João del-Rei, MG, 36301-160, Brasil
| | - Leticia Ferreira Magalhaes
- Departamento de Ciências Naturais (DCNat), Universidade Federal de São João del-Rei (UFSJ), São João del-Rei, MG, 36301-160, Brasil
| | | | - Thiago Alvares Zamaro de Freitas
- Departamento de Ciências Naturais (DCNat), Universidade Federal de São João del-Rei (UFSJ), São João del-Rei, MG, 36301-160, Brasil
| | - Brener Rodrigo Carvalho Vale
- Departamento de Ciências Naturais (DCNat), Universidade Federal de São João del-Rei (UFSJ), São João del-Rei, MG, 36301-160, Brasil.,Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, Unicamp, Campinas, São Paulo, 13083-859, Brasil
| | - André Felipe Vale da Fonseca
- Departamento de Ciências Naturais (DCNat), Universidade Federal de São João del-Rei (UFSJ), São João del-Rei, MG, 36301-160, Brasil
| | - Marco Antônio Schiavon
- Departamento de Ciências Naturais (DCNat), Universidade Federal de São João del-Rei (UFSJ), São João del-Rei, MG, 36301-160, Brasil
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Yao X, Wang Y, Wang L, Wang X, Bao Y. The Dissociation of Exciton During the Lasing of a Single CsPbBr 3 Microplate. J Phys Chem Lett 2022; 13:10851-10857. [PMID: 36382934 DOI: 10.1021/acs.jpclett.2c03242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this work, the lasing of a single CsPbBr3 microplate (MP) fabricated with chemical vapor deposition (CVD) is investigated from the viewpoint of exciton dissociation characterized with steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL). It is confirmed that the lasing performance is disturbed by the dissociation of excitons. The increase of lasing threshold with temperature originates from the dissociation of free excitons (FEs) to localized carriers (LCs), and the lasing failure is mostly ascribed to the dissociation of FEs to free carriers (FCs). The working temperature of micro/nanolasers based on metal halide perovskites (MHPs) could be raised up to the temperature determined by exciton binding energy while the laser heating effect is dealt with well. These findings advance our understanding on the photophysics of the lasing behaviors of micro/nanocavities based on MHPs and help us promote their performance by having better thermal management.
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Affiliation(s)
- Xiuru Yao
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Yu Wang
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Lu Wang
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Xin Wang
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
| | - Yongjun Bao
- State Key Laboratory of Superhard Materials & School of Physics, Jilin University, Changchun130012, China
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Xu S, Tang J, Qu J, Xia P, Zhu K, Shao H, Wang C. Lead-Free Copper-Based Perovskite Nanonets for Deep Ultraviolet Photodetectors with High Stability and Better Performance. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3264. [PMID: 36234392 PMCID: PMC9565817 DOI: 10.3390/nano12193264] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Revised: 09/15/2022] [Accepted: 09/17/2022] [Indexed: 06/16/2023]
Abstract
Considering practical application and commercialization, the research of non-toxic and stable halide perovskite and its application in the field of photoelectric detection have received great attention. However, there are relatively few studies on deep ultraviolet photodetectors, and the perovskite films prepared by traditional spin-coating method have disadvantages such as uneven grain size and irregular agglomeration, which limit their device performance. Herein, uniform and ordered Cs3Cu2I5 nanonet arrays are fabricated based on monolayer colloidal crystal (MCC) templates prepared with 1 μm polystyrene (PS) spheres, which enhance light-harvesting ability. Furthermore, the performance of the lateral photodetector (PD) is significantly enhanced when using Cs3Cu2I5 nanonet compared to the pure Cs3Cu2I5 film. Under deep ultraviolet light, the Cs3Cu2I5 nanonet PD exhibits a high light responsivity of 1.66 AW-1 and a high detection up to 2.48 × 1012 Jones. Meanwhile, the unencapsulated PD has almost no response to light above 330 nm and shows remarkable stability. The above results prove that Cs3Cu2I5 nanonet can be a great potential light-absorbing layer for solar-blind deep ultraviolet PD, which can be used as light absorption layer of UV solar cell.
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Affiliation(s)
- Shuhong Xu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Jieqin Tang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Junfeng Qu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Pengfei Xia
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Kai Zhu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Haibao Shao
- School of Electronics & Information, Nantong University, Nantong 226019, China
| | - Chunlei Wang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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Wang R, Zhou H, Wu B, Wu D, Tao L, Wang H, Peng X, Zhang J, Wang H. Self-Powered CsPbBr 3 Perovskite Nanonet Photodetector with a Hollow Vertical Structure. J Phys Chem Lett 2021; 12:7519-7525. [PMID: 34346683 DOI: 10.1021/acs.jpclett.1c02177] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
For most commercial photodetectors (PDs), incident light is illuminated from the top or side of the device, but the opaque electrode (gold, copper, or aluminum, etc.) on the top will block part of the light from entering, wasting the efficiency of light utilization. Herein, to solve this issue, we introduced perovskite nanonet PDs with a hollow vertical structure by using a polystyrene microsphere template. Compared with ordinary thin film devices, our reticulated hollow vertical structure devices not only can enable easy entrance of the light from the reticulated hollow surface of the devices but also can reduce the reflection of light, resulting in better device performance. For our optimal CsPbBr3 perovskite PDs, high photoelectric performances were achieved with the switching ratio up to 4.17 × 104, a detectivity of 7.44 × 1011 Jones, a linear dynamic range of 108 dB, and the rise/fall time of 0.1/0.16 ms. More importantly, because of the reticulated hollow structure, our device performance showed less reduction when the incident light was illuminated from the top than from the bottom. These results may be of great reference value for improving the photoelectric performance of silicon-based devices or deep ultraviolet PDs.
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Affiliation(s)
- Rui Wang
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Hai Zhou
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Bowei Wu
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Dingjun Wu
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Li Tao
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Hanbin Wang
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Xiaoniu Peng
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Jun Zhang
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Hao Wang
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
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Chen J, Zhou Y, Fu Y, Pan J, Mohammed OF, Bakr OM. Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics. Chem Rev 2021; 121:12112-12180. [PMID: 34251192 DOI: 10.1021/acs.chemrev.1c00181] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.
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Affiliation(s)
- Jie Chen
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.,School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yang Zhou
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yongping Fu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Jun Pan
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, People's Republic of China
| | - Omar F Mohammed
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Osman M Bakr
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Pan X, Zhang J, Zhou H, Liu R, Wu D, Wang R, Shen L, Tao L, Zhang J, Wang H. Single-Layer ZnO Hollow Hemispheres Enable High-Performance Self-Powered Perovskite Photodetector for Optical Communication. NANO-MICRO LETTERS 2021; 13:70. [PMID: 34138321 PMCID: PMC8187591 DOI: 10.1007/s40820-021-00596-5] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Accepted: 12/29/2020] [Indexed: 05/21/2023]
Abstract
The carrier transport layer with reflection reduction morphology has attracted extensive attention for improving the utilization of light. Herein, we introduced single-layer hollow ZnO hemisphere arrays (ZHAs) behaving light trapping effect as the electron transport layer in perovskite photodetectors (PDs). The single-layer hollow ZHAs can not only reduce the reflection, but also widen the angle of the effective incident light and especially transfer the distribution of the optical field from the ZnO/FTO interface to the perovskite active layer confirmed by the 3D finite-difference time-domain simulation. These merits benefit for the generation, transport and separation of carriers, improving the light utilization efficiency. Finally, our optimized FTO/ZHA/CsPbBr3/carbon structure PDs showed high self-powered performance with a linear dynamic range of 120.3 dB, a detectivity of 4.2 × 1012 Jones, rise/fall time of 13/28 µs and the f-3 dB of up to 28 kHz. Benefiting from the high device performance, the PD was demonstrated to the application in the directional transmission of encrypted files as the signal receiving port with super high accuracy. This work uniquely utilizes the features of high-performance self-powered perovskite PDs in optical communication, paving the path to wide applications of all-inorganic perovskite PDs.
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Affiliation(s)
- Xiyan Pan
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Jianqiang Zhang
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Hai Zhou
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China.
| | - Ronghuan Liu
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Dingjun Wu
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Rui Wang
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Liangping Shen
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Li Tao
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Jun Zhang
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China
| | - Hao Wang
- Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, School of Microelectronics and Faculty of Physics and Electronic Science, Hubei University, Wuhan, 430062, People's Republic of China.
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Xie X, Liu G, Dong P, Liu D, Ni Y, Ma J, Zhu W, Chen D, Zhang C. In situ polymer-covered annealing strategy for high-efficiency carbon-electrode CsPbIBr 2 solar cells. NEW J CHEM 2021. [DOI: 10.1039/d1nj04214a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
An in situ polymer-covered annealing strategy is proposed to regulate the crystallization behavior of one-step-deposited CsPbIBr2 film, which leads to a film with many superior properties. A carbon-electrode perovskite solar cell fabricated with such a film yields a significantly enhanced efficiency from 8.71% to 10.50%.
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Affiliation(s)
- Xiaoping Xie
- Qinghai Huanghe Hydropower Development Co., Ltd, Xining, Qinghai 810008, China
| | - Gang Liu
- Qinghai Huanghe Hydropower Development Co., Ltd, Xining, Qinghai 810008, China
| | - Peng Dong
- Qinghai Huanghe Hydropower Development Co., Ltd, Xining, Qinghai 810008, China
| | - Dawei Liu
- Qinghai Huanghe Hydropower Development Co., Ltd, Xining, Qinghai 810008, China
| | - Yufeng Ni
- Qinghai Huanghe Hydropower Development Co., Ltd, Xining, Qinghai 810008, China
| | - Junxiao Ma
- State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China
| | - Weidong Zhu
- State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China
| | - Dazheng Chen
- State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China
| | - Chunfu Zhang
- State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China
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Li MY, Shen K, Xu H, Ren A, Lee J, Kunwar S, Liu S, Wu J. Enhanced Spatial Light Confinement of All Inorganic Perovskite Photodetectors Based on Hybrid Plasmonic Nanostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004234. [PMID: 33107207 DOI: 10.1002/smll.202004234] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 08/27/2020] [Indexed: 06/11/2023]
Abstract
3D incident light confinement by radical electromagnetic fields offers a facile and novel way to break through the performance limit of inorganic perovskite CsPbBr3 quantum dots (QDs). Herein, metallic nanoparticles decorated anodic aluminum oxide (AAO) hybrid plasmonic nanostructures with geometric control are first proposed for cyclic light utilization of perovskite photodetectors, enabled by spatially extended light confinement. The drastic multiple interference induced by plasmonic coupling within AAO matrixes are generated as a function of pore sizes, which can effectively collect the transmitted photons back to the surface. In addition, the self-assembled metallic nanoparticles simultaneously concentrate the incident and reflected light beams into the CsPbBr3 QD layers. The light confinement inherently stems from the metallic nanoparticles due to the variation of the near surface electromagnetic fields. As a result, perovskite photodetectors based on Al nanoparticles/AAO hybrid plasmonic nanostructures with a pore size of 220 nm exhibit enhanced photoresponse behavior with remarkably increased photocurrent by ≈43× and maintain low dark current under 490 nm light illumination at 1 V.
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Affiliation(s)
- Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei, 430070, China
| | - Kai Shen
- Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, UK
| | - Hao Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
| | - Jihoon Lee
- College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sundar Kunwar
- College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sisi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
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Guo Z, Li J, Pan R, Cheng J, Chen R, He T. All-inorganic copper(i)-based ternary metal halides: promising materials toward optoelectronics. NANOSCALE 2020; 12:15560-15576. [PMID: 32692791 DOI: 10.1039/d0nr04220j] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
All-inorganic lead halides, including CsPbX3 (X = Cl, Br, I), have become important candidate materials in the field of optoelectronics. However, the inherent toxicity of metal lead and poor material stability have hindered further applications of traditional metal halides, CsPbX3. Therefore, copper(i)-based ternary metal halides are expected to become promising substitutes for traditional metal halides because of their nontoxicity, excellent optical properties and good stability under ambient conditions. This article reviews the recent development of all-inorganic low-dimensional copper(i)-based ternary metal halides by introducing their various synthesis methods, crystal structures, properties and their optoelectronic applications. In addition, the prospects for future challenges and the potential significance of copper(i)-based ternary metal halides in optoelectronic fields are presented.
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Affiliation(s)
- Zhihang Guo
- Key Laboratory of Green Preparation and Application for Functional Materials, Ministry of Education, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
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Lu CG, Hu XF, Xu SH, Liu HG, Xu JK, Cui YP, Wang CL. A simple multiple centrifugation method for large-area homogeneous perovskite CsPbBr 3 films with optical lasing. RSC Adv 2020; 10:25480-25486. [PMID: 35518619 PMCID: PMC9055284 DOI: 10.1039/d0ra04259e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Accepted: 06/11/2020] [Indexed: 11/21/2022] Open
Abstract
Large scale cesium lead-halide (CsPbX3, X = Cl, Br, and I) perovskite films have become the basis of laser applications.
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Affiliation(s)
- Chang-Gui Lu
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
| | - Xue-Fang Hu
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
| | - Shu-Hong Xu
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
| | - Hong-Gui Liu
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
| | - Jing-Kun Xu
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
| | - Yi-Ping Cui
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
| | - Chun-Lei Wang
- Advanced Photonics Center
- School of Electronic Science & Engineering
- Southeast University
- Nanjing
- China
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Yin B, Zhang Y, Li K, Zhou J, Liu C, Zhang M, Ruan S. UV detector based on an FTO/TiO 2/MoO 3 heterojunction with a potential well trapping electrons in the dark. NANOTECHNOLOGY 2019; 30:465501. [PMID: 31370044 DOI: 10.1088/1361-6528/ab379f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
An FTO/TiO2/MoO3 based UV detector has been fabricated through the synthesis of TiO2 nanowires (NWs) on FTO using the hydrothermal method, the preparation of MoO3 on TiO2 NWs by the spin-coating method, after the hydrothermal synthesis, and the preparation of Ag electrodes on the FTO and MoO3. The detector exhibits an excellent performance of photo-to-dark current ratio of more than two orders of magnitude. This performance is produced because the dark current under 2.2 V bias has been significantly inhibited due to the electronic potential well formed by the energy band distribution while the photocurrent has increased in comparison with FTO/TiO2 based detectors under the same conditions which also have a higher photo-to-dark current ratio without the MoO3 content. Not only does this study take advantage of 1D NWs and 2D nanostructures, but it also provides a new way to inhibit the dark current of detectors.
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Affiliation(s)
- Bo Yin
- State Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012, People's Republic of China
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