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Hu QC, Xu J, Luo QY, Hu HB, Guo PJ, Liu CY, Zhao S, Zhou Y, Wang JF. Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity. OPTICS LETTERS 2024; 49:2966-2969. [PMID: 38824304 DOI: 10.1364/ol.522770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Accepted: 04/29/2024] [Indexed: 06/03/2024]
Abstract
Over the past decades, spin qubits in silicon carbide (SiC) have emerged as promising platforms for a wide range of quantum technologies. The fluorescence intensity holds significant importance in the performance of quantum photonics, quantum information process, and sensitivity of quantum sensing. In this work, a dual-layer Au/SiO2 dielectric cavity is employed to enhance the fluorescence intensity of a shallow silicon vacancy ensemble in 4H-SiC. Experimental results demonstrate an effective fourfold augmentation in fluorescence counts at saturating laser power, corroborating our theoretical predictions. Based on this, we further investigate the influence of dielectric cavities on the contrast and linewidth of optically detected magnetic resonance (ODMR). There is a 1.6-fold improvement in magnetic field sensitivity. In spin echo experiments, coherence times remain constant regardless of the thickness of dielectric cavities. These experiments pave the way for broader applications of dielectric cavities in SiC-based quantum technologies.
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Xue Y, Titze M, Mack J, Yang Z, Zhang L, Su SS, Zhang Z, Fan L. Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide. NANO LETTERS 2024; 24:2369-2375. [PMID: 38348823 DOI: 10.1021/acs.nanolett.3c03905] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
The deterministic generation of individual color centers with defined orientations or types in solid-state systems is paramount for advancements in quantum technologies. Silicon vacancies in 4H-silicon carbide (4H-SiC) can be formed in V1 and V2 types. However, silicon vacancies are typically generated randomly between V1 and V2 types with similar probabilities. Here, we show that the preferred V2 centers can be selectively generated by focused ion beam (FIB) implantation on the m-plane in 4H-SiC. When implantation is on the m-plane (a-plane), the generation probability ratio between V1 and V2 centers increase exponentially (remains constant) with decreasing FIB fluences. With a fluence of 10 ions/spot, the probability to generate V2 centers is seven times higher than V1 centers. Our results represent a critical step toward the deterministic creation of specific defect types.
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Affiliation(s)
- Yongzhou Xue
- James C. Wyant College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, United States
| | - Michael Titze
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - John Mack
- James C. Wyant College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, United States
| | - Zhaohui Yang
- Department of Electrical and Computer Engineering, University of Arizona, Tucson, Arizona 85721, United States
| | - Liang Zhang
- James C. Wyant College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, United States
| | - Shei S Su
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Zheshen Zhang
- Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721, United States
| | - Linran Fan
- James C. Wyant College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, United States
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Zhou JY, Li Q, Hao ZH, Lin WX, He ZX, Liang RJ, Guo L, Li H, You L, Tang JS, Xu JS, Li CF, Guo GC. Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes. NANO LETTERS 2023; 23:4334-4343. [PMID: 37155148 DOI: 10.1021/acs.nanolett.3c00568] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using a surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin-defect-based quantum applications in mature SiC materials.
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Affiliation(s)
- Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Rui-Jian Liang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Liping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Lixing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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Fan Y, Song Y, Xu Z, Wu J, Zhu R, Li Q, Fang F. Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing. NANOTECHNOLOGY 2021; 33:125701. [PMID: 34875640 DOI: 10.1088/1361-6528/ac40c1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 12/07/2021] [Indexed: 06/13/2023]
Abstract
Molecular dynamics simulation is adopted to discover the formation mechanism of silicon vacancy color center and to study the damage evolution in 4H-SiC during helium ion implantation with different annealing temperatures. The number and distribution of silicon vacancy color centers during He ion implantation can be more accurately simulated by introducing the ionization energy loss during implantation. A new method for numerical statistic of silicon vacancy color centers is proposed, which takes into account the structure around the color centers and makes statistical results more accurate than the Wigner-Seitz defect analysis method. Meanwhile, the photoluminescence spectra of silicon vacancy color centers at different helium ion doses are characterized to verify the correctness of the numerical analysis. The new silicon vacancy color center identification method can help predicting the optimal annealing temperature for silicon vacancy color centers, and provide guidance for subsequent color center annealing experiments.
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Affiliation(s)
- Yexin Fan
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ying Song
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Zongwei Xu
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Jintong Wu
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
| | - Rui Zhu
- State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China
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Liu J, Xu Z, Song Y, Wang H, Dong B, Li S, Ren J, Li Q, Rommel M, Gu X, Liu B, Hu M, Fang F. Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser. NANOTECHNOLOGY AND PRECISION ENGINEERING 2020. [DOI: 10.1016/j.npe.2020.11.003] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Affiliation(s)
- Jiayu Liu
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Zongwei Xu
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Ying Song
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Hong Wang
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin
300387, China
| | - Bing Dong
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
| | - Shaobei Li
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Jia Ren
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026,
China
| | - Mathias Rommel
- Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10,
Erlangen 91058, Germany
| | - Xinhua Gu
- Tianjin Kaiprin Optoelectronic Technology Co., Ltd., Tianjin 300300, China
| | - Bowen Liu
- Ultrafast Laser Lab, Tianjin University, Tianjin 300072, China
| | - Minglie Hu
- Ultrafast Laser Lab, Tianjin University, Tianjin 300072, China
| | - Fengzhou Fang
- State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China
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