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Xu J, Luo Z, Chen L, Zhou X, Zhang H, Zheng Y, Wei L. Recent advances in flexible memristors for advanced computing and sensing. MATERIALS HORIZONS 2024. [PMID: 38919028 DOI: 10.1039/d4mh00291a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Conventional computing systems based on von Neumann architecture face challenges such as high power consumption and limited data processing capability. Improving device performance via scaling guided by Moore's Law becomes increasingly difficult. Emerging memristors can provide a promising solution for achieving high-performance computing systems with low power consumption. In particular, the development of flexible memristors is an important topic for wearable electronics, which can lead to intelligent systems in daily life with high computing capacity and efficiency. Here, recent advances in flexible memristors are reviewed, from operating mechanisms and typical materials to representative applications. Potential directions and challenges for future study in this area are also discussed.
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Affiliation(s)
- Jiaming Xu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Ziwang Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Long Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Xuhui Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Haozhe Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Yuanjin Zheng
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
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Park SO, Park T, Jeong H, Hong S, Seo S, Kwon Y, Lee J, Choi S. Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor crossbar array. NANOSCALE HORIZONS 2023; 8:1366-1376. [PMID: 37403772 DOI: 10.1039/d3nh00121k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
Memristors are two-terminal memory devices that can change the conductance state and store analog values. Thanks to their simple structure, suitability for high-density integration, and non-volatile characteristics, memristors have been intensively studied as synapses in artificial neural network systems. Memristive synapses in neural networks have theoretically better energy efficiency compared with conventional von Neumann computing processors. However, memristor crossbar array-based neural networks usually suffer from low accuracy because of the non-ideal factors of memristors such as non-linearity and asymmetry, which prevent weights from being programmed to their targeted values. In this article, the improvement in linearity and symmetry of pulse update of a fully CMOS-compatible HfO2-based memristor is discussed, by using a second-order memristor effect with a heating pulse and a voltage divider composed of a series resistor and two diodes. We also demonstrate that the improved device characteristics enable energy-efficient and fast training of a memristor crossbar array-based neural network with high accuracy through a realistic model-based simulation. By improving the memristor device's linearity and symmetry, our results open up the possibility of a trainable memristor crossbar array-based neural network system that possesses great energy efficiency, high area efficiency, and high accuracy at the same time.
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Affiliation(s)
- See-On Park
- The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Taehoon Park
- The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Hakcheon Jeong
- The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Seokman Hong
- The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Seokho Seo
- The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Yunah Kwon
- Nano Convergence Technology Division, National Nanofab Center (NNFC), 291, Daehak-ro, Daejeon 34141, Republic of Korea.
| | - Jongwon Lee
- Nano Convergence Technology Division, National Nanofab Center (NNFC), 291, Daehak-ro, Daejeon 34141, Republic of Korea.
| | - Shinhyun Choi
- The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
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Qin X, Hu J, Liu H, Xu X, Yang F, Sun B, Zhao Y, Huang M, Zhang Y. Performance Regulation of a ZnO/WO x-Based Memristor and Its Application in an Emotion Circuit. J Phys Chem Lett 2023; 14:3039-3046. [PMID: 36946653 DOI: 10.1021/acs.jpclett.3c00063] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The development of a memristor is very important for artificial intelligence and new electronic circuits. In this work, Ag(Al)/ZnO/WOx/FTO memristors are fabricated by magnetron sputtering, and the device performance is further improved through annealing and oxygen supply during sputtering. The experimental data show that the FTO/WOx/ZnO-O2/Ag memristor has the largest high resistance state (HRS)/low resistance state (LRS) resistance ratio and the best durability. Through data fitting and analysis, the switching mechanism of memristors with different top electrodes is investigated. Furthermore, the physical model of the best performance memristor was established by Simulink, and an emotion-monitoring circuit was constructed on this basis. The circuit can be used to monitor and record the mood changes, and the feedback of the emotion monitoring can be fed back to the user to help them adjust the mood.
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Affiliation(s)
- Xizi Qin
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Junda Hu
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Hao Liu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Xin Xu
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Feng Yang
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Yong Zhao
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, People's Republic of China
| | - Mei Huang
- Southwestern Institute of Physics, Chengdu, Sichuan 610041, People's Republic of China
| | - Yong Zhang
- Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education, School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
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Li Y, Xie L, Xiao P, Zheng C, Hong Q. Drift speed adaptive memristor model. Neural Comput Appl 2023. [DOI: 10.1007/s00521-023-08401-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
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Lei J, Sun S, Li Y, Xu P, Liu C, Chang S, Yang G, Chen S, Fa W, Wu D, Li AD. Electrochemical Resistive Switching in Nanoporous Hybrid Films by One-Step Molecular Layer Deposition. J Phys Chem Lett 2023; 14:1389-1394. [PMID: 36729129 DOI: 10.1021/acs.jpclett.2c03850] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
An organic-inorganic hybrid resistive random-access memory based on a nanoporous zinc-based hydroquinone (Zn-HQ) thin film has been constructed with a Pt/Zn-HQ/Ag sandwich structure. The porous Zn-HQ functional layer was directly fabricated by a one-step molecular layer deposition. These Pt/Zn-HQ/Ag devices show a typical electroforming-free bipolar resistive switching characteristic with lower operation voltages and higher on/off ratio above 102. Our nanoporous hybrid devices can also realize multilevel storage capability and exhibit excellent endurance/retention properties. The connection and disconnection of Ag conductive filaments in nanoporous Zn-HQ thin film follow the electrochemical metallization mechanism. Our computational simulations confirm that the existence of nanopores in Zn-HQ thin films facilitates the Ag filament formation, contributing to the high performance of our hybrid devices.
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Affiliation(s)
- Jin Lei
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
| | - Song Sun
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
| | - Yuchen Li
- Kuang Yaming Honors School and Institute for Brain Sciences, Nanjing University, Nanjing 210023, P. R. China
| | - Ping Xu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
| | - Chang Liu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
| | - Shaozhong Chang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
| | - Genglai Yang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
| | - Shuang Chen
- Kuang Yaming Honors School and Institute for Brain Sciences, Nanjing University, Nanjing 210023, P. R. China
| | - Wei Fa
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
| | - Di Wu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
| | - Ai-Dong Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China
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Srivastava S, Thomas JP, Guan X, Leung KT. Induced Complementary Resistive Switching in Forming-Free TiO x/TiO 2/TiO x Memristors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43022-43029. [PMID: 34463478 DOI: 10.1021/acsami.1c09775] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The undesirable sneak current path is one of the key challenges in high-density memory integration for the emerging cross-bar memristor arrays. This work demonstrates a new heterojunction design of oxide multilayer stacking with different oxygen vacancy contents to manipulate the oxidation state. We show that the bipolar resistive switching (BRS) behavior of the Pt/TiOx/Pt cross-bar structure can be changed to complementary resistive switching (CRS) by introducing a thin TiO2 layer in the middle of the TiOx layer to obtain a Pt/TiOx/TiO2/TiOx/Pt device architecture with a double-junction active matrix. In contrast to the BRS in a single-layer TiOx matrix, the device with a double-junction matrix remains in a high-resistance state in the voltage range below the SET voltage, which makes it an efficient structure to overcome the sneak path constraints of undesired half-selected cells that lead to incorrect output reading. This architecture is capable of eliminating these half-selected cells between the nearby cross-bar cells in a smaller programming voltage range. A simplified model for the switching mechanism can be used to account for the observed high-quality switching performance with excellent endurance and current retention properties.
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Affiliation(s)
- Saurabh Srivastava
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
- Low Energy Electronics System (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 Create Way, Singapore 138602, Singapore
| | - Joseph Palathinkal Thomas
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Xiaoyi Guan
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Kam Tong Leung
- WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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Barman BK, Ghosh NG, Giri I, Kumar C, Zade SS, Vijayaraghavan RK. Incorporating a redox active entity to attain electrical bistability in a polymer semiconductor. NANOSCALE 2021; 13:6759-6763. [PMID: 33885477 DOI: 10.1039/d1nr00960e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to the advantages of 3-D printable stack, scalability and low cost solution state production, polymer-based resistive memory devices have been identified as the promising alternative for conventional oxide technology. Resistive memory devices based on the redox switch mechanism is particularly found to yield high precision with respect to the operational voltages. Reversible non-volatile resistive state switching was realized with high device yield (>80%), with a redox-active chemical entity conjugated to the polymeric semiconductor, and the control experiments with the model compound confirmed the imperative role of the redox-active anthraquinone center in the polymeric backbone. Highly uniform nanodomains and the trap free layers excluded the possibilities of other known switching mechanisms. Optical studies and the molecular modelling data assert the presence of strong charge transfer characteristics upon optical excitation due to the insertion of the anthraquinone unit, which was detrimental in exhibiting bistable conductive states in electrical bias as well.
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Affiliation(s)
- Biswajit K Barman
- Department of Chemical Sciences and Centre for Advanced Functional Materials (CAFM), Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur, West Bengal-741246.
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