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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Ghosh S, Varghese A, Thakar K, Dhara S, Lodha S. Enhanced responsivity and detectivity of fast WSe 2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction. Nat Commun 2021; 12:3336. [PMID: 34099709 PMCID: PMC8185115 DOI: 10.1038/s41467-021-23679-8] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Accepted: 04/28/2021] [Indexed: 02/05/2023] Open
Abstract
Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck in the realization of high performance detectors is their trap-dependent photoresponse that trades off responsivity with speed. This work demonstrates a facile method of attenuating this trade-off by nearly 2x through integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor. The tunable p-n junction allows modulation of the photocarrier population and width of the conducting channel independently from the phototransistor. Increased illumination current with the lateral p-n junction helps achieve responsivity enhancement upto 2.4x at nearly the same switching speed (14-16 µs) over a wide range of laser power (300 pW-33 nW). The added benefit of reduced dark current enhances specific detectivity (D*) by nearly 25x to yield a maximum measured flicker noise-limited D* of 1.1×1012 Jones. High responsivity of 170 A/W at 300 pW laser power along with the ability to detect sub-1 pW laser switching are demonstrated.
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Affiliation(s)
- Sayantan Ghosh
- Department of Electrical Engineering, IIT Bombay, Mumbai, India
| | - Abin Varghese
- Department of Electrical Engineering, IIT Bombay, Mumbai, India
- Department of Materials Science and Engineering, Monash University, Clayton, VIC, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai, India
| | - Kartikey Thakar
- Department of Electrical Engineering, IIT Bombay, Mumbai, India
| | - Sushovan Dhara
- Department of Electrical Engineering, IIT Bombay, Mumbai, India
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai, India.
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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Su BW, Zhang XL, Yao BW, Guo HW, Li DK, Chen XD, Liu ZB, Tian JG. Laser Writable Multifunctional van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003593. [PMID: 33230902 DOI: 10.1002/smll.202003593] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Revised: 10/28/2020] [Indexed: 06/11/2023]
Abstract
Achieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre-fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS2 , the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base width WB , which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@WB ≈600 nm) and ≈12 (@WB ≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe2 /MoS2 heterostructure device. The current work demonstrates a novel, cost-effective, and universal method to fabricate multifunctional nanoelectronic devices. The proposed approach exhibits promise for large-scale integrated circuits based on 2D heterostructures.
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Affiliation(s)
- Bao-Wang Su
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - Xi-Lin Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - Bin-Wei Yao
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300071, China
| | - Hao-Wei Guo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
| | - Xu-Dong Chen
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300071, China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin, 300071, China
- The collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin, 300071, China
- The collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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Su BW, Yao BW, Zhang XL, Huang KX, Li DK, Guo HW, Li XK, Chen XD, Liu ZB, Tian JG. A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing. NANOSCALE ADVANCES 2020; 2:1733-1740. [PMID: 36132297 PMCID: PMC9417257 DOI: 10.1039/d0na00201a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2019] [Accepted: 03/13/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.
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Affiliation(s)
- Bao-Wang Su
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Bin-Wei Yao
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology Tianjin 30071 China
| | - Xi-Lin Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Kai-Xuan Huang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Hao-Wei Guo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Xiao-Kuan Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
| | - Xu-Dong Chen
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology Tianjin 30071 China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
- Renewable Energy Conversion and Storage Center, Nankai University Tianjin 300071 China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University Tianjin 300071 China
- Renewable Energy Conversion and Storage Center, Nankai University Tianjin 300071 China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
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