1
|
Li L, Chen G, Zheng H, Meng W, Jia S, Zhao L, Zhao P, Zhang Y, Huang S, Huang T, Wang J. Room-temperature oxygen vacancy migration induced reversible phase transformation during the anelastic deformation in CuO. Nat Commun 2021; 12:3863. [PMID: 34162862 PMCID: PMC8222270 DOI: 10.1038/s41467-021-24155-z] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2021] [Accepted: 05/28/2021] [Indexed: 11/23/2022] Open
Abstract
From the mechanical perspectives, the influence of point defects is generally considered at high temperature, especially when the creep deformation dominates. Here, we show the stress-induced reversible oxygen vacancy migration in CuO nanowires at room temperature, causing the unanticipated anelastic deformation. The anelastic strain is associated with the nucleation of oxygen-deficient CuOx phase, which gradually transforms back to CuO after stress releasing, leading to the gradual recovery of the nanowire shape. Detailed analysis reveals an oxygen deficient metastable CuOx phase that has been overlooked in the literatures. Both theoretical and experimental investigations faithfully predict the oxygen vacancy diffusion pathways in CuO. Our finding facilitates a better understanding of the complicated mechanical behaviors in materials, which could also be relevant across multiple scientific disciplines, such as high-temperature superconductivity and solid-state chemistry in Cu-O compounds, etc. The effect of point defects on mechanical behaviour of materials is generally considered at high temperatures. This work reports a reversible stress-induced migration of point defects during anelastic deformation in CuO nanowires at room temperature resulting from heterogeneous strain distribution.
Collapse
Affiliation(s)
- Lei Li
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Guoxujia Chen
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - He Zheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China. .,Suzhou Institute of Wuhan University, Suzhou, Jiangsu, China. .,Wuhan University Shenzhen Research Institute, Shenzhen, Guangdong, China.
| | - Weiwei Meng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Shuangfeng Jia
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Ligong Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Peili Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Ying Zhang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Shuangshuang Huang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Tianlong Huang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China
| | - Jianbo Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan, China.
| |
Collapse
|
2
|
Zhang J. Phase transformation and its effect on the piezopotential in a bent zinc oxide nanowire. NANOTECHNOLOGY 2021; 32:075404. [PMID: 33105120 DOI: 10.1088/1361-6528/abc49f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Most piezotronic nanodevices rely on the piezopotential generated by the bending of their component piezoelectric nanowires (NWs). The mechanical behaviours and piezopotential properties of zinc oxide (ZnO) NWs under lateral bending are investigated in this paper by using a multiscale modelling technique combining first-principles calculations, molecular dynamics simulations and finite-element calculations. Two phase transformation processes are successively found in ZnO NWs by increasing the bending force. As a result, the inner and outer surfaces of bent ZnO NWs transform from the parent wurtzite (WZ) structure to a hexagonal (HX) structure and a body-centred-tetragonal (BCT-4) structure, respectively. Different material properties are found among the WZ, BCT-4, and HX structures, which result in a significant change in the piezopotential distribution in bent ZnO NWs after the phase transformation. Meanwhile, the piezopotential generated in bent ZnO NWs can be enhanced by an order of magnitude due to the phase transformation. Moreover, a significant increase in the electronic band gap is found in the transformed HX structure, which implies that the phase transformation may also affect the piezopotential in bent ZnO NWs by modifying their semiconducting properties especially when the doping level of NWs is large.
Collapse
Affiliation(s)
- Jin Zhang
- School of Science, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China
| |
Collapse
|