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Zhu R, Zheng S, Li X, Wang T, Tan C, Yu T, Liu Z, Wang X, Li J, Wang J, Gao P. Atomic-Scale Tracking Topological Phase Transition Dynamics of Polar Vortex-Antivortex Pairs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312072. [PMID: 38734889 DOI: 10.1002/adma.202312072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Revised: 04/02/2024] [Indexed: 05/13/2024]
Abstract
Non-trivial topological structures, such as vortex-antivortex (V-AV) pairs, have garnered significant attention in the field of condensed matter physics. However, the detailed topological phase transition dynamics of V-AV pairs, encompassing behaviors like self-annihilation, motion, and dissociation, have remained elusive in real space. Here, polar V-AV pairs are employed as a model system, and their transition pathways are tracked with atomic-scale resolution, facilitated by in situ (scanning) transmission electron microscopy and phase field simulations. This investigation reveals that polar vortices and antivortices can stably coexist as bound pairs at room temperature, and their polarization decreases with heating. No dissociation behavior is observed between the V-AV phase at room temperature and the paraelectric phase at high temperature. However, the application of electric fields can promote the approach of vortex and antivortex cores, ultimately leading to their annihilation near the interface. Revealing the transition process mediated by polar V-AV pairs at the atomic scale, particularly the role of polar antivortex, provides new insights into understanding the topological phases of matter and their topological phase transitions. Moreover, the detailed exploration of the dynamics of polar V-AV pairs under thermal and electrical fields lays a solid foundation for their potential applications in electronic devices.
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Affiliation(s)
- Ruixue Zhu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Sizheng Zheng
- Department of Engineering Mechanics, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Xiaomei Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- School of Integrated Circuits, East China Normal University, Shanghai, 200241, China
| | - Tao Wang
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Congbing Tan
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan, Hunan, 411201, China
| | - Tiancheng Yu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Zhetong Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Xinqiang Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Jiangyu Li
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Jie Wang
- Department of Engineering Mechanics, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Zhejiang Laboratory, Hangzhou, 311100, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
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Kwon YJ, Yeo Y, Kim MS, Kim YJ, Park HS, Kim J, Choi SY, Yang CH. Observation of Hidden Polar Phases and Flux Closure Domain Topology in Bi 2WO 6 Thin Films. NANO LETTERS 2023; 23:4557-4563. [PMID: 37154863 DOI: 10.1021/acs.nanolett.3c01009] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Topological textures of ferroelectric polarizations have promise as alternative devices for future information technology. A polarization rotation inevitably deviates from the stable orientation in axial ferroelectrics, but local energy losses compromise the global symmetry, resulting in a distorted shape of the topological vortex or inhibiting the vortex. Easy planar isotropy helps to promote rotating structures and, accordingly, to facilitate access to nontrivial textures. Here, we investigate the domain structure of an epitaxial thin film of bismuth tungsten oxide (Bi2WO6) grown on a (001) SrTiO3 substrate. By using angle-resolved piezoresponse force microscopy and scanning transmission electron microscopy, we find the existence of a hidden phase with ⟨100⟩-oriented ferroelectric polarizations in the middle of the four variant ⟨110⟩-oriented polarization domains, which assists in the formation of flux closure domains. The results suggest that this material is one step closer to becoming an isotropic two-dimensional polar material.
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Affiliation(s)
- Yong-Jun Kwon
- Department of Physics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Youngki Yeo
- Department of Physics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Min-Su Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Yong-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jaegyu Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
- Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
- Center of van der Waals Quantum Solids, Institute for Basic Science, Pohang 37673, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon 34141, Republic of Korea
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Calderon S, Funni SD, Dickey EC. Accuracy of Local Polarization Measurements by Scanning Transmission Electron Microscopy. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:1-12. [PMID: 36268839 DOI: 10.1017/s1431927622012429] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Accurately determining local polarization at atomic resolution can unveil the mechanisms by which static and dynamical behaviors of the polarization occur, including domain wall motion, defect interaction, and switching mechanisms, advancing us toward the better control of polarized states in materials. In this work, we explore the potential of atomic-resolution scanning transmission electron microscopy to measure the projected local polarization at the unit cell length scale. ZnO and PbMg1/3Nb2/3O3 are selected as case studies, to identify microscope parameters that can significantly affect the accuracy of the measured projected polarization vector. Different STEM imaging modalities are used to determine the location of the atomic columns, which, when combined with the Born effective charges, allows for the calculation of local polarization. Our results indicate that differentiated differential phase contrast (dDPC) imaging enhances the accuracy of measuring local polarization relative to other imaging modalities, such as annular bright-field or integrated-DPC imaging. For instance, under certain experimental conditions, the projected spontaneous polarization for ZnO can be calculated with 1.4% error from the theoretical value. Furthermore, we quantify the influence of sample thickness, probe defocus, and crystal mis-tilt on the relative errors of the calculated polarization.
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Affiliation(s)
- Sebastian Calderon
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Stephen D Funni
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Elizabeth C Dickey
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
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Aramberri H, Fedorova NS, Íñiguez J. Ferroelectric/paraelectric superlattices for energy storage. SCIENCE ADVANCES 2022; 8:eabn4880. [PMID: 35921413 PMCID: PMC9348786 DOI: 10.1126/sciadv.abn4880] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Accepted: 06/16/2022] [Indexed: 06/09/2023]
Abstract
The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in pulsed-power technologies. However, relatively few materials of this kind are known. Here, we consider ferroelectric/paraelectric superlattices as artificial electrostatically engineered antiferroelectrics. Specifically, using high-throughput second-principles calculations, we engineer PbTiO3/SrTiO3 superlattices to optimize their energy storage performance at room temperature (to maximize density and release efficiency) with respect to different design variables (layer thicknesses, epitaxial conditions, and stiffness of the dielectric layer). We obtain results competitive with the state-of-the-art antiferroelectric capacitors and reveal the mechanisms responsible for the optimal properties.
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Affiliation(s)
- Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Inter-Institutional Research Group Uni.lu-LIST on Ferroic Materials, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Natalya S. Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Inter-Institutional Research Group Uni.lu-LIST on Ferroic Materials, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Inter-Institutional Research Group Uni.lu-LIST on Ferroic Materials, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
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Chen W, Dong Z, Chen H, Shen J, Du X, Dong F, Zhou T, Huang W, Wu Z, Liu W, Zhang Y. Control of upconversion luminescence by tailoring energy migration in doped perovskite superlattices. OPTICS LETTERS 2022; 47:1250-1253. [PMID: 35230339 DOI: 10.1364/ol.452482] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 01/24/2022] [Indexed: 06/14/2023]
Abstract
We describe an experimental investigation of photon upconversion (UC) in a series of perovskite BaTiO3/SrTiO3 superlattices doped with different lanthanide compositions. We show that UC emission can be effectively enhanced by precisely incorporating a set of lanthanide ions into separated layers rather than homogeneously distributing the dopant ions in the host lattice. The use of an inert layer in the superlattice can suppress deleterious energy cross-relaxation. Furthermore, UC emission can be rendered by controlling the energy migration mediated by the Yb-doped sublattice. These results demonstrate the opportunity to modulate energy migration and transfer processes through the rational design of superlattice structures.
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Grünebohm A, Marathe M, Khachaturyan R, Schiedung R, Lupascu DC, Shvartsman VV. Interplay of domain structure and phase transitions: theory, experiment and functionality. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:073002. [PMID: 34731841 DOI: 10.1088/1361-648x/ac3607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Domain walls and phase boundaries are fundamental ingredients of ferroelectrics and strongly influence their functional properties. Although both interfaces have been studied for decades, often only a phenomenological macroscopic understanding has been established. The recent developments in experiments and theory allow to address the relevant time and length scales and revisit nucleation, phase propagation and the coupling of domains and phase transitions. This review attempts to specify regularities of domain formation and evolution at ferroelectric transitions and give an overview on unusual polar topological structures that appear as transient states and at the nanoscale. We survey the benefits, validity, and limitations of experimental tools as well as simulation methods to study phase and domain interfaces. We focus on the recent success of these tools in joint scale-bridging studies to solve long lasting puzzles in the field and give an outlook on recent trends in superlattices.
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Affiliation(s)
- Anna Grünebohm
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Madhura Marathe
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
| | - Ruben Khachaturyan
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Raphael Schiedung
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- National Institute for Material Science (NIMS), Tsukuba 305-0047, Japan
| | - Doru C Lupascu
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
| | - Vladimir V Shvartsman
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
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Accuracy and precision of position determination in ISTEM imaging of BaTiO 3. Ultramicroscopy 2021; 227:113325. [PMID: 34045084 DOI: 10.1016/j.ultramic.2021.113325] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2021] [Revised: 05/07/2021] [Accepted: 05/18/2021] [Indexed: 11/21/2022]
Abstract
In this paper we study the effect of lens aberrations (spherical aberration and astigmatism), beam tilt, contamination and shot noise on the accuracy and precision of position determination in imaging scanning transmission electron microscopy (ISTEM) on the example of BaTiO3. ISTEM images are simulated as a function of sample thickness and defocus starting from a nearly perfect microscope setting. A defocus range was identified, in which atom column positions were reliably visible and could be decently measured. By averaging over this defocus and thickness range a figure of merit was defined and used to study the influence of above mentioned disturbing effects as a function of their strength. It turned out that column positions might become inaccurate, but distances are measured accurately. These were used to obtain recommendations for the experimental setup to measure the atomic arrangement that induces ferroelectric switching of BaTiO3.
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Lum CY, Lim KG, Chew KH. Rich antiferroelectric phase diagram of antiferroelectric-ferroelectric superlattices: internal electric field- and interface induced phase transitions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:425401. [PMID: 32544898 DOI: 10.1088/1361-648x/ab9d4a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2020] [Accepted: 06/16/2020] [Indexed: 06/11/2023]
Abstract
We propose a thermodynamic model to the study the antiferroelectric (AFE) phase transitions in antiferroelectric-ferroelectric (AFE-FE) superlattices in which the coupling at the interface between two layers is mediated by local polarizations. Phase diagram of the AFE layer in term of the degree of interfacial effectλand temperatureTinvolving ferrielectric (FI) and ferroelectric (FE) phases is investigated. These two phases are stabilized by the interfacial effect and internal electric field. AFE thicknessLAFEversusTphase diagram is also constructed. Intermediate regions of two-phase coexistence (IM) emerge in theλ-TandLAFE-Tphase diagrams, if certain interface propertiesλand layer thicknessLAFEcriteria are met. These IM regions are metastable states, which exist as a transition state between two phases. A tricritical point locates at the boundaries across the FI, IM and FE phases is found in theLAFE-Tphase diagram. Competition among the internal electric field due to the electrostatic coupling, the FE ordering arises from the interfacial effect and the antiferroelectric ordering within the AFE layer giving rises to the rich AFE phase diagram.
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Affiliation(s)
- C Y Lum
- Center for Theoretical and Computational Physics, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia
- Department of Foundation Studies, RCSI UCD Malaysia Campus, 10450 Penang, Malaysia
| | - K-G Lim
- University of Southampton Malaysia, 79200 Iskandar Puteri, Johor, Malaysia
| | - K-H Chew
- Center for Theoretical and Computational Physics, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia
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