Ultra-low thermal conductivity and high thermoelectric performance of two-dimensional triphosphides (InP3, GaP3, SbP3 and SnP3): a comprehensive first-principles study

Epitaxial Growth of Monolayer SnP3 with High Mobility and Chiral Boundary Junctions

Two-dimensional materials with layered structures, appropriate band gaps, and high carrier mobility have attracted tremendous interest for their potential applications. Here we report the growth of monolayer SnP3 on Au(111) surfaces by molecular beam epitaxy. The kinetic processes for the growth and the crystalline properties are studied by scanning tunneling microscopy. The weak interaction between SnP3 and its Au(111) substrate is signified by the random crystal orientation distributions of SnP3 nanosheets. The electronic structures exhibit a band gap of ∼0.25 eV and high charge carrier mobility comparable to that of black phosphorus engineered by compressive strain. Additionally, domain boundary junctions with opposite chirality are observed, resulting from the strained film in the epitaxial growth process. Our work provides a method to fabricate high-quality monolayer SnP3 and suggests that the monolayer SnP3 is a promising candidate for applications in nanoelectronics and optoelectronics.

Strain-Driven High Thermal Conductivity in Hexagonal Boron Phosphide Monolayer

Two-dimensional graphenelike material, hexagonal boron phosphide (h-BP), is a promising candidate for electronic and optoelectronic devices because of its suitable band gap and high carrier mobility. Especially from the ultrahigh lattice thermal conductivity (κl), it exhibits great potential to solve the challenges of future thermal management applications. Here, the excellent lattice thermal transport properties of the h-BP monolayer are systematically analyzed at the atomic level based on the first-principles method. The results show that the ultrahigh κl value of the h-BP monolayer is attributed to its high phonon group velocity and long phonon lifetime and the strong phonon hydrodynamic effect. We further explore the influence of the tensile strain on the thermal transport properties of the h-BP monolayer. As the strain increases from 0 to 8%, the κl value shows a trend of first increasing and then decreasing due to the coeffect of strain-driven changes for phonon harmonicity and anharmonicity. Under a strain of 6%, the κl value of the h-BP monolayer is as high as 795 W/mK at 300 K, which is about 2.22 times larger than that of 357 W/mK without strain. Such a significant increase in the κl value is mainly due to the increased phonon group velocity and decreased Grüneisen parameter caused by strain. This work is helpful to understand the critical role of tensile strain in lattice thermal transport of two-dimensional graphenelike materials. It is conducive to promoting the thermal management application of the h-BP monolayer.

The intrinsically low lattice thermal conductivity of monolayer T-Au6X2 (X = S, Se and Te)

Thermal conductivity (κ, which consists of electronic thermal conductivity κe and lattice thermal conductivity κl), as an essential parameter in thermal management applications, is a critical physical quantity to measure the heat transfer performance of materials. To seek low-κ materials for heat-related applications, such as thermoelectric materials and thermal barrier coatings. In this study, based on a complex cluster design, we report a new class of two-dimensional (2D) transition metal dichalcogenides (TMDs): T-Au6X2 (X = S, Se, and Te) with record ultralow κl values. At room temperature, the κl values of T-Au6S2, T-Au6Se2, and T-Au6Te2 are 0.25 (0.23), 0.30 (0.21), and 0.12 (0.10) W m-1 K-1 along the x-axis (y-axis) direction, respectively, exhibiting good thermal insulation. The ultralow κl originates from strong phonon softening and suppression, especially for the phonon with frequency 0-1 THz. In addition, T-Au6Te2 holds the lowest group velocity and phonon relaxation time among the three T-Au6X2 monolayers. Our study provides an alternative approach for achieving ultralow κl through complex cluster replacement. Meanwhile, this new class of TMDs is expected to shine in thermal insulation and thermoelectricity due to their ultralow κl values.

High-Throughput Computational Design of 2D Ternary Chalcogenides for Sustainable Energy

Two-dimensional materials are considered to be promising for next-generation electronic and energy devices. However, the limited availability of 2D materials hinders their applications. Herein, we employed high-throughput computation to discover new 2D materials by cleaving the bulk and to investigate their electronic, thermoelectric, and optoelectronic properties. Using our database containing 810 structures of chalcogenides ABX3 (A or B = Al, Ga, In, Si, Ge, Sn, P, As, Sb, and Bi; X = S, Se, and Te), we identified 204 new 2D compounds promising for experimental preparation according to the exfoliation energy. Notably, 96 of them are more easily exfoliated than graphene, 52 compounds show higher Seebeck coefficients than Bi2Te3 at 300 K, and 20 compounds have power factors beyond 2 × 10-3 Wm-1 K-2 at 900 K. Also, 6 new compounds exhibit high theoretical photovoltaic efficiency exceeding 30%. Our findings expand the 2D materials family and provide new 2D compounds for sustainable thermoelectric and optoelectronic energy applications.

Super-high carrier mobilities and excellent thermoelectric performances of Tri-Tri group-VA monolayers

High-performance thermoelectric materials in theoretical and experimental research are mostly composed of expensive, scarce, heavy elements and rarely of single light elements, which severely limit their application and development. Based on density functional and semiclassical Boltzmann transport theory, we determine that a stable phosphorene allotrope, named Tri-Tri phosphorene, has super-high electron mobility (23845.29 cm2 V-1 s-1) much higher than those of most two-dimension materials. Moreover, its optimized maximum ZT can reach up to 3.43 at room temperature (4.83 at 500 K and 5.92 at 700 K), exhibiting highly favorable prospects in practical thermoelectric systems. Motivated by the excellent properties of Tri-Tri phosphorene, we further demonstrate the structural stability of Tri-Tri arsenene and Tri-Tri antimonene and predict that the two Tri-Tri structures also have high Seebeck coefficients and electron mobilities. Their lattice thermal conductivities are dramatically decreased compared with Tri-Tri phosphorene. Thus, their predicted thermoelectric performances are also excellent, with maximum ZT values of 4.12 (Tri-Tri arsenene) and 3.54 (Tri-Tri antimonene) at room temperature. The low layer moduli of the three Tri-Tri structures indicate that they have high mechanical flexibility and suitability for current device assemblies. All these desirable properties make Tri-Tri group-VA materials promising for future applications in thermoelectric devices.

Layer-dependent excellent thermoelectric materials: from monolayer to trilayer tellurium based on DFT calculation

Monoelemental two-dimensional (2D) materials, which are superior to binary and ternary 2D materials, currently attract remarkable interest due to their fascinating properties. Though the thermal and thermoelectric (TE) transport properties of tellurium have been studied in recent years, there is little research about the thermal and TE properties of multilayer tellurium with interlayer interaction force. Herein, the layer modulation of the phonon transport and TE performance of monolayer, bilayer, and trilayer tellurium is investigated by first-principles calcuations. First, it was found that thermal conductivity as a function of layer numbers possesses a robust, unusually non-monotonic behavior. Moreover, the anisotropy of the thermal transport properties of tellurium is weakened with the increase in the number of layers. By phonon-level systematic analysis, we found that the variation of phonon transport under the layer of increment was determined by increasing the phonon velocity in specific phonon modes. Then, the TE transport properties showed that the maximum figure of merit (ZT) reaches 6.3 (p-type) along the armchair direction at 700 K for the monolayer and 6.6 (p-type) along the zigzag direction at 700 K for the bilayer, suggesting that the TE properties of the monolayer are highly anisotropic. This study reveals that monolayer and bilayer tellurium have tremendous opportunities as candidates in TE applications. Moreover, further increasing the layer number to 3 hinders the improvement of TE performance for 2D tellurium.

Physisorption Behaviors of Organochlorine Pesticides on the InP3 Monolayer from Theoretical Insight

Dichlorodiphenyltrichloroethane (DDT), hexachlorocyclohexane (BHC), aldrin, and chlordimeform are ubiquitous organochlorine pesticide (OCP) residues in the environment, which pose a great threat to human health and ecosystems due to their high toxicity and easy accumulation. Based on the density functional theory (DFT) calculations, a two-dimensional InP3 monolayer was selected as a sensing material to study the sensitivity detection and adsorption behaviors toward BHC, aldrin, chlordimeform, and DDT. The calculation results show that four pesticide molecules are adsorbed on the InP3 surface by physical interaction. The identified response values (69.1, -43.1%) for DDT and chlordimeform reveal the potential of the InP3 monolayer as a sensing material for the detection of these two pesticides, accompanied by the achievement of cyclic utilization by heating to 498 K. The most satisfactory result is the adsorption of BHC, owing to the admirable sensing response (62.7%) and short recovery time (1.8 s) at room temperature, which makes InP3 a promising pesticide sensor for BHC. However, the InP3 surface is unsuitable for aldrin sensing due to poor response (-1.9%). Our work gives theoretical insight into the good sensitivity and recycling of the InP3 monolayer as a new pesticide sensor to detect DDT, BHC, and chlordimeform, which further broadens the application prospect of the InP3 nanosheet into the sensitive detection of organochlorine pesticides in the ecological environment.

Boosting thermoelectric performance of HfSe2 monolayer by selectivity chemical adsorption

In this work, a strategy to boosting thermoelectric (TE) performance of 2D materials is explored. We find that, appropriate chemical adsorption of atoms can effectively increase the TE performance of HfSe₂ monolayer. Our results show that the adsorption of Ni atom on HfSe₂ monolayer (Ni-HfSe₂) can improve the optimal power factor PF and ZT at 300 K, increased by more than ∼67% and ∼340%, respectively. The PF and ZT of Ni-HfSe₂ at 300 K can reach 85.06 mW m^-1 K^-2 and 3.09, respectively. The detailed study reveal that the adsorption of Ni atom can induce additional conductional channels of electrons, enhance the coupling of acoustic-optical phonons and the phonon anharmonicity, resulting in an obvious increment of electrical conductivity (increased by more than ∼89%) in n-type doped system and an ultralow phonon thermal conductivity (1.17 W/mK at 300 K). The high electrical conductivity and ultralow phonon thermal conductivity results in the significant increments of PF and ZT. Our study also shows that, Ni-HfSe₂ is a thermal, dynamic and mechanical stable structure, which can be employed in TE application. Our research indicates that selectivity chemical adsorption is a promising way to increase TE performance of 2D materials.

The potential thermoelectric material Tl3XSe4 (X = V, Ta, Nb): a first-principles study

Searching for materials with a high thermoelectric figure of merit (ZT) has always been the goal of scientific researchers in the energy field. Here, we combine first-principles calculations to obtain the thermoelectric characteristics of Tl₃XSe₄ (X = V, Nb, or Ta). First, we compared the phonon thermal transport characteristics of Tl₃XSe₄ by solving the Boltzmann transport equation and calculated the thermal conductivity. After that, we obtained the thermoelectric properties of Tl₃XSe₄ through the relaxation time approximation theory. The results show that Tl₃XSe₄ has a high Seebeck coefficient, high electrical conductivity, high power factor (PF) and low thermal conductivity contributed by both phonons and electrons. At the same time, the ZT value of Tl₃XSe₄ shows that it is a potential thermoelectric material with excellent performance. This work demonstrates the thermoelectric transport characteristics of Tl₃XSe₄ to explore its potential applications in many other fields of thermoelectricity and energy.

How Hydrodynamic Phonon Transport Determines the Convergence of Thermal Conductivity in Two-Dimensional Materials

The phonon Boltzmann transport equation combined with first-principles calculation has achieved great success in exploring the lattice thermal conductivity (κ) of various materials. However, the convergence of the predicted κ is a critical issue, leading to quite scattered results recorded in the literature, even for the same material. In this paper, we explore the origin for the convergence of thermal conductivity in two-dimensional (2D) materials. Two kinds of typical 2D materials, graphene and silicene, are studied, and the bulk silicon is also compared as a control system for a three-dimensional material. The effect of the cutoff radius (rc) in the third-order interatomic force constants on κ is studied for these three materials. It is found that that κ of these three materials exhibits diverse convergence behaviors with respect to rc, which coincides very well with the strength of hydrodynamic phonon transport. By further analyzing the phonon lifetime and scattering rates, we reveal that the dominance of the normal scattering process gives rise to the hydrodynamic phonon transport in both graphene and silicene, which results in long-range interaction and a large lifetime of low-frequency flexural acoustic phonons, while the same phenomenon is absent in bulk silicon. Our study highlights the importance of long-range interaction associated with hydrodynamic phonon transport in determining the thermal conductivity of 2D materials.

Theoretical Prediction of the Monolayer Hf2Br4 as Promising Thermoelectric Material

The stability, electronic structure, electric transport, thermal transport and thermoelectric properties of the monolayer Hf₂Br₄ are predicted by using first principle calculations combined with Boltzmann transport theory. The dynamic stability of the monolayer Hf₂Br₄ is verified by phonon band dispersion, and the thermal stability is revealed by ab initio molecular dynamics simulations. The electronic structure calculation indicates that the monolayer Hf₂Br₄ is an indirect band gap semiconductor with a band gap of 1.31 eV. The lattice thermal conductivity of the monolayer Hf₂Br₄ is investigated and analyzed on phonon mode level. The calculation results of the electric transport explore the excellent electric transport properties of the monolayer Hf₂Br₄. The thermoelectric transport properties as a function of carrier concentration at three different temperatures are calculated. The study indicates that the monolayer Hf₂Br₄ can be an alternative, stable two-dimensional material with potential application in the thermoelectric field.

Anisotropic thermal and electrical transport properties induced high thermoelectric performance in an Ir2Cl2O2 monolayer

In recent years, the energy crisis and global warming have been urgent problems that need to be solved. As is known, thermoelectric (TE) materials can transfer heat energy to electrical energy without air pollution. High-throughput calculations as a novel approach are adopted by screening promising TE materials. In this paper, we use first-principles calculations combined with the semiclassical Boltzmann transport theory to estimate the TE performance of monolayer Ir₂Cl₂O₂ according to the prediction that Ir₂Cl₂O₂ has potential as a good TE material via high-throughput calculations. The low thermal conductivities of 1.73 and 4.68 W mK^-1 of Ir₂Cl₂O₂ along the x- and y-axes are calculated, respectively, which exhibits the strong anisotropy caused by the difference in group velocities of low-frequency phonon modes. Then, the electronic transport properties are explored, and the figure of merit ZT is eventually obtained. The maximum ZT value reaches 2.85 (0.40) along the x-axis (y-axis) at 700 K, revealing that the TE properties of the Ir₂Cl₂O₂ monolayer are highly anisotropic. This work reveals that the anisotropic layer Ir₂Cl₂O₂ exhibits high TE performance, which confirms that it is feasible to screen excellent TE materials via high-throughput calculations.

Thermal Properties of 2D Dirac Materials MN4 (M = Be and Mg): A First-Principles Study

Recently, a novel two-dimensional (2D) Dirac material BeN₄ monolayer has been fabricated experimentally through high-pressure synthesis. In this work, we investigate the thermal properties of a new class of 2D materials with a chemical formula of MN₄ (M = Be and Mg) using first-principles calculations. First, the cohesive energy and phonon dispersion curve confirm the dynamical stability of BeN₄ and MgN₄ monolayers. Besides, BeN₄ and MgN₄ monolayers have the anisotropic lattice thermal conductivities of 842.75 (615.97) W m^-1 K^-1 and 52.66 (21.76) W m^-1 K^-1 along the armchair (zigzag) direction, respectively. The main contribution of the lattice thermal conductivities of BeN₄ and MgN₄ monolayers are from the low frequency phonon branches. Moreover, the average phonon heat capacity, phonon group velocity, and phonon lifetime of BeN₄ monolayer are 3.54 × 10⁵ J K^-1 m^-3, 3.61 km s^-1, and 13.64 ps, which are larger than those of MgN₄ monolayer (3.42 × 10⁵ J K^-1 m^-3, 3.27 km s^-1, and 1.70 ps), indicating the larger lattice thermal conductivities of BeN₄ monolayer. Furthermore, the mode weighted accumulative Grüneisen parameters (MWGPs) of BeN₄ and MgN₄ monolayers are 2.84 and 5.62, which proves that MgN₄ monolayer has stronger phonon scattering. This investigation will enhance an understanding of thermal properties of MN₄ monolayers and drive the applications of MN₄ monolayers in nanoelectronic devices.

Low thermal conductivity and high performance anisotropic thermoelectric properties of XSe (X = Cu, Ag, Au) monolayers

Combining density functional theory (DFT) and semi-classic Boltzmann transport theory, we report the thermoelectric (TE) performance of a family of two-dimensional (2D) group IB-selenides XSe (X = Cu, Ag, Au). The results show that these monolayers exhibit small and anisotropic phonon velocities (0.98-3.84 km s^-1), large Grüneisen parameters (up to 100), and drastic phonon scattering between the optical and acoustic phonons. These intrinsic properties originate from strong phonon anharmonicity and suppress the heat transport capacity, resulting in low lattice thermal conductivities (12.54 and 1.22 W m^-1 K^-1) along the x- and y-directions for a CuSe monolayer. Among our studied monolayers, the 2D CuSe monolayer possesses the most remarkable TE performance with ultrahigh ZT (3.26) for n-type doping along the y-direction at 300 K. CuSe monolayer can achieve higher thermoelectric conversion efficiency at a lower synthetic preparation cost than the expensive AgSe and AuSe monolayers, and our work provides a theoretical basis for paving the way for further experimental studies.

Stability, optoelectronic and thermal properties of two-dimensional Janusα-Te2S

Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te₂S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼10³cm²V^-1s^-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te₂S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te₂S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te₂S/T-PdS₂,α-Te₂S/BP andα-Te₂S/H-MoS₂are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m^-1K^-1) of Janusα-Te₂S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.

Enhancement of thermoelectric performance in graphenylene nanoribbons by suppressing phonon thermal conductance: the role of phonon local resonance

Based on the method of non-equilibrium Green's function, we investigate the thermal transport and thermoelectric properties of graphenylene nanoribbons (GRNRs) with different width and chirality. The results show that the thermoelectric (TE) performance of GRNRs significantly increases with decreasing ribbon width, which stems from the reduction of thermal conductance. In addition, by changing the ribbon width and chirality, the figure of merit (ZT) can be controllably manipulated and maximized up to 0.45 at room temperature. Moreover, it is found that theZTvalue of GRNRs with branched structure can reach 1.8 at 300 K and 3.4 at 800 K owing to the phonon local resonance. Our findings here are of great importance for thermoelectric applications of GRNRs.

Interlayer Quasi-Bonding Interactions in 2D Layered Materials: A Classification According to the Occupancy of Involved Energy Bands

Recent studies have revealed that the interlayer interaction in two-dimensional (2D) layered materials is not simply of van der Waals character but could coexist with quasi-bonding character. Herein, we classify the interlayer quasi-bonding interactions into two main categories (I: homo-occupancy interaction; II: hetero-occupancy interaction) according to the occupancy of the involved energy bands near the Fermi level. We then investigate the quasi-bonding-interaction-induced band structure evolution of several representative 2D materials based on density functional theory calculations. Further calculations confirm that this classification is applicable to generic 2D layered materials and provide a unified understanding of the total strength of interlayer interaction, which is a synergetic effect of the van der Waals attraction and the quasi-bonding interaction. The latter is stabilizing in main category II and destabilizing in main category I. Thus, the total interlayer interaction strength is relatively stronger in category II and weaker in category I.

Novel two-dimensional beta-XTe (X = Ge, Sn, Pb) as promising room-temperature thermoelectrics

In this paper, we designed novel low-symmetry two-dimensional (2D) structures based on conventional XTe (X = Ge, Sn, Pb) thermoelectrics with large average atomic mass. The first-principles calculations combined with Boltzmann transport theory show that the beta-XTe exhibit good stability, high electron carrier mobility, and ultralow Κ_L. The subsequent analyses show that the ultralow Κ_L stems from the coexistence of resonant bonding, weak bonding, and lone-pair electrons in beta-XTe, which leads to large anharmonicities. On the other hand, the lowest energy conduction band of beta-GeTe and beta-SnTe show the convergence of the low-lying Ʃ band, which is the source of the high-power factor in the two systems. The calculated maximum ZT of beta-XTe (X = Ge, Sn, Pb) are 3.08, 1.60, and 0.57 at 300 K, respectively, which is significantly greater than that of the previously reported high-symmetry 2D alpha-XTe and the commercial thermoelectrics. We hope that this work can provide important guidance for the development of thermoelectric materials.

Potential thermoelectric materials: first-principles prediction of low lattice thermal conductivity of two-dimensional (2D) orthogonal ScX2 (X = C and N) compounds

Thermoelectric materials with excellent performance can efficiently and directly convert waste heat into electrical energy. In today's era, finding thermoelectric materials with excellent performance and adjusting the thermoelectric parameters are essential for the sustainable development of energy in the context of the energy crisis and global warming. Through first-principles calculations, we notice that two-dimensional (2D) orthogonal ScX₂ (X = C and N) compounds show great potential in the field of thermoelectricity. Different from most materials containing C or N atoms, which are generally accompanied by high lattice thermal conductivity (TC), the 2D o-ScX₂ exhibited a rather low and anisotropic lattice TC. The κ3L (the lattice thermal conductivity including the effect of three-phonon scattering and isotope scattering) of o-ScC₂ along the X and Y directions are 2.79 W m^-1 K^-1 and 1.55 W m^-1 K^-1, and those of o-ScN₂ are 1.57 W m^-1 K^-1 and 0.56 W m^-1 K^-1. By calculating the fourth-order interatomic force constants (IFCs), we obtain the κ3+4L with the additional four-phonon scattering effect. Our results clearly show that four-phonon scattering plays an important role in the TC of the two materials, the κ3+4L of o-ScC₂ is only half of its κ3L. Furthermore, it can be noticed that the low lattice TCs of o-ScX₂ (X = C and N) are the result of many factors, e.g., heavy atom doping, the strong anharmonicity caused by the vibration of Sc atoms in the out-of-plane direction and C(N) atoms in the in-plane direction, important four-phonon scattering and strongly polarized covalent bonds between X atoms and Sc atoms. Moreover, it is interesting to find that the thermal transport properties of o-ScX₂ are led by a different phonon mechanism, e.g., the different TCs of o-ScC₂ and o-ScN₂ are determined by the anharmonic characteristic, and the harmonic characteristic plays a more important role in the anisotropy of o-ScX₂ (X = C and N). In general, our research can be expected to provide important guidance for the application of o-ScX₂ (X = C and N) in the thermoelectric field.

Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP_3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP₃ is only 0.43 Wm⁻¹K⁻¹ because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP₃ as an excellent room-temperature thermoelectric material.

Theoretical investigations of novel Janus Pb2SSe monolayer as a potential multifunctional material for piezoelectric, photovoltaic, and thermoelectric applications

Two-dimensional Janus nanomaterials, due to their unique electronic, optical, and piezoelectric characteristics resulting from the antisymmetric structures, exhibit great prospects in multifunctional energy application to alleviate the energy crisis. Monolayer Janus Pb₂SSe, with a black phosphorus-like structure and an indirect band gap of 1.59 eV as well as high carrier mobility (526-2105 cm² V^-1 s^-1), displays outstanding potentials in the energy conversion between nanomechanical energy, solar energy, waste heat, and electricity, which has been comprehensively studied utilizing DFT-based simulations. The research results reveal that monolayer Pb₂SSe not only possesses giant in-plane piezoelectricity of d₁₁ = 75.1 pm V^-1 but also superhigh out-of-plane piezoelectric coefficients (d₃₁ = 0.5 pm V^-1 and d₃₃ = 15.7 pm V^-1). Meanwhile, by constructing Pb₂SSe bilayers, the out-of-plane piezoelectric coefficients can be significantly enhanced (d₃₁ = 19.2 pm V^-1 and d₃₃ = 194.7 pm V^-1). In addition, owing to the small conduction band offset, suitable donor band gap and excellent light absorption capability in the Pb₂SSe/SnSe (Pb₂SSe/GeSe) heterostructure, the power conversion efficiencies were calculated to be up to 20.02% (Pb₂SSe/SnSe) and 19.28% (Pb₂SSe/GeSe), making it a promising candidate for solar energy collection. Furthermore, from the thermoelectric electron and phonon transport calculations, it can be found that the Pb₂SSe monolayer is an n-type thermoelectric material with ultrahigh ZT = 2.19 (1.52) at room temperature, which can be traced back to its ultralow κ_L = 0.78 (0.99) W m^-1 K^-1, and superhigh PF = 10.18 (8.25) mW m^-1 K^-2 along the x(y) direction at the optimal doping concentration at 300 K. The abovementioned versatile characteristics in the Janus Pb₂SSe monolayer, along with its comprehensive stabilities (energy, dynamic, thermal, and mechanical stabilities), highlight its potential in clean energy harvesting.

Ultra-low thermal conductivity and high thermoelectric performance of monolayer BiP3: a first principles study

The thermoelectric properties of monolayer triphosphide BiP₃ are studied via first principles calculations and Boltzmann transport equation. First, the Seebeck coefficient, electrical conductivity and electron thermal conductivity at different temperatures are calculated using the Boltzmann transport equation with relaxation time approximation. It has been observed that BiP₃ has a large power factor (265 × 10^-4 W K^-2 m^-1, 700 K). Then, by analyzing the second-order interatomic force constant (IFCS), the atomic structure and phonon dispersion were studied, and the thermal conductivity of monolayer BiP₃ was predicted in the temperature range of 300-800 K, and it was found that it had a very low thermal conductivity (2.13 W m^-1 K^-1) at room temperature. The thermal conductivity is mainly contributed by the branches of acoustics along in-plane transverse (TA). Finally, the maximum ZT value of monolayer BiP₃ is 3.06 at 700 K, when the electron doping concentration is 2.35 × 10¹¹ cm^-2, which indicates that it is a promising thermoelectric material.

Spin Polarization Properties of Two Dimensional GaP3 Induced by 3d Transition-Metal Doping

The electronic structure and spin polarization properties of monolayer GaP₃ induced by transition metal (TM) doping were investigated through a first-principles calculation based on density functional theory. The calculation results show that all the doped systems perform spin polarization properties, and the Fe–doped system shows the greatest spin polarization property with the biggest magnetic moment. Based on the analysis from the projected density of states, it was found that the new spin electronic states originated from the p–d orbital couplings between TM atoms and GaP₃ lead to spin polarization. The spin polarization results were verified by calculating the spin density distributions and the charge transfer. It is effective to introduce the spin polarization in monolayer GaP₃ by doping TM atoms, and our work provides theoretical calculation supports for the applications of triphosphide in spintronics.

Superior Conversion Efficiency Achieved in GeP3/h-BN Heterostructures as Novel Flexible and Ultralight Thermoelectrics

GeP₃ materials are attracting broad research interest due to their typical puckered layer structure, high carrier mobility, and chemical stability. This peculiarity expedites the independent control of anisotropic electrical and thermal conductance, which is thus expected to possess great thermoelectric potential. Nevertheless, the metal characteristics of GeP₃ in the bulk and thick films are adverse to real application because of the low Seebeck coefficient. Thus, it is highly desirable to explore effective solutions to broaden the band gap and also maintain its excellent electrical conductance. Herein, we designed the interlaced GeP₃/hexagonal boron nitride (h-BN) bulk heterostructure using various component thicknesses. By using ab initio calculations based on the Boltzmann transport theory, we found that capping h-BN layer can obviously increase the band gap of the GeP₃ layer by 0.24 eV, and more interestingly, the anisotropic electronic structure in the GeP₃/h-BN heterostructure was accordingly modulated toward a favorable direction for high thermoelectricity. An ultrahigh ZT value of around 5 was predicted at 300 K in p-type GeP₃/h-BN, attributed to the adjusted multivalley band structure. Overall, our work provided an effective route to design novel high-performance thermoelectrics through the appropriate construction of heterostructures.

Improved thermoelectric properties of WS2-WSe2 phononic crystals: insights from first-principles calculations

Recently, two-dimensional transition metal dichalcogenide (TMDC) monolayers have attracted much attention owing to their excellent physical properties. In the present study, we systematically investigate the thermoelectric properties of different WS₂-WSe₂ phononic crystals by utilizing first-principles calculations. First, the thermal properties of all phononic crystals with superlattices (SL1 and SL2) and their individual components (WS₂ and WSe₂) are evaluated, in which the lattice thermal conductivities (k_ph) of WS₂ and WSe₂ monolayers present isotropic behaviors, while the values of SL1 and SL2 monolayers reveal weak anisotropic behaviors. It can be observed that the k_ph values of WS₂ and WSe₂ monolayers are larger than those of SL1 and SL2 monolayers, which can be attributed to the decreasing phonon group velocity and phonon lifetime. Moreover, we calculate the electronic band structures of all monolayers, indicating that all monolayers are semiconductors. Afterwards, the electrical conductivities, the Seebeck coefficients, the power factors, the electronic thermal conductivities, and the ZT values at different temperatures are evaluated. The ZT_max values of WS₂, WSe₂, SL1, and SL2 monolayers with p-type doping are 0.43, 0.37, 0.95, and 0.66 at 1000 K. It can be proved that the SL1 monolayer possesses the largest ZT, which is at least two times higher than those of the WS₂ and WSe₂ monolayer. Finally, we build two kinds of phononic crystals with periodic holes (PCH1 and PCH2) and evaluate the thermoelectric properties. It can be observed that the PCH2 structure shows the best thermoelectric performance. The ZT_max values of the PCH2 structure can reach 2.53 and 4.54 with p-type doping along the x and y directions, which are 2.66 and 6.75 times higher than those of the SL1 monolayer. This work provides a new strategy to obtain higher thermoelectric performance and demonstrates the potential applications of phononic crystals in TMDC-based nanoelectronic devices.

Two-Dimensional Lateral Heterostructures of Triphosphides: AlP3-GaP3 as a Promising Photocatalyst for Water Splitting

Photocatalytic water splitting to produce hydrogen is a potential means of achieving scalable and economically feasible solar hydrogen production. Two-dimensional (2D) triphosphides are 2D materials with potential applications in photovoltaics and optoelectronics. Here, we theoretically investigated 56 systems in total, including seven monolayer XP₃ (X = Al, Ga, Ge, As, In, Sn, and Sb) and their combined vertical and lateral heterostructures. We found that the lateral heterostructure AlP₃-GaP₃ should be a promising photocatalyst for water splitting, through a quadruple screening process combining free energy calculations. It is fascinating that AlP₃-GaP₃ ingeniously combines all the desired features for photocatalytic water-splitting reactions, including a nearly direct band gap (1.43 eV), perfect band edge position, high STH efficiency (16.89%), broad light absorption region of sunlight, ultrahigh carrier mobility (20,000 cm² V^-1 s^-1), low exciton binding energy (0.33 eV), and excellent stability in a water environment. Moreover, through Gibbs free energy calculations, the active sites and possible reaction pathways of the overall water-splitting reaction by AlP₃-GaP₃ were also confirmed. Our work offers a strategy for the design and fabrication of novel lateral heterostructures for a high-performance photocatalyst in water-splitting reactions.