Photonic crystal cavity-enhanced emission from silicon vacancy centers in polycrystalline diamond achieved without postfabrication fine-tuning

Overcoming Temperature Limits in the Optical Cooling of Solids Using Light-Dressed States

Laser cooling of solids currently has a temperature floor of 50-100 K. We propose a method that could overcome this using defects, such as diamond color centers, with narrow electronic manifolds and bright optical transitions. It exploits the dressed states formed in strong fields which extend the set of phonon transitions and have tunable energies. This allows an enhancement of the cooling power and diminishes the effect of inhomogeneous broadening. We demonstrate these effects theoretically for the silicon vacancy and the germanium vacancy, and discuss the role of background absorption, phonon-assisted emission, and nonradiative decay.

Enhancement of dual zero phonon line emissions in nanodiamonds using quasiperiodic photonic structures

Color centers in nanodiamonds (NDs) have been largely explored by coupling to a photonic structured matrix (PSM) to amplify visible range emission features, enhancing their use in quantum technologies. Here, we study the emission enhancement of dual near-infrared zero phonon line (ZPL) emission from silicon-boron (SiB) and silicon-vacancy (SiV-) centers in NDs using a spontaneously emerged low index-contrast quasiperiodic PSM, having micron-scale air pores. An intensity enhancement factor of 6.15 for SiV- and 7.8 for SiB ZPLs is attained for the PSM sample compared to a control sample. We find Purcell enhancement of 2.77 times for the PSM sample using spatial-dependent decay rate measurements, supported by localized field intensity confinement in the sample. Such cavity-like emission enhancement and lifetime reduction are enabled by an in-plane order-disorder scattering in the PSM sample substantiated by pump-dependent emission measurements. The results put forward a facile approach to tailor the near-infrared dual ZPL emission from NDs using nanophotonic structures.

Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp²-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp²-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films, i.e. that the carriers excited within the centers do not leak into the defects of the film. The activation energy ΔE = 54 meV and the attempt frequency α = 2.6 were extracted from the measured data. These values corresponded very well with the published values for SiV centers in monocrystalline diamond. We support this claim by measuring the transient absorption via a pump and probe technique, where we separated the nanosecond recombination dynamics of carriers in SiV centers from the picosecond decay dynamics of polycrystalline diamond defects. Our results show that PL emission properties of SiV centers in polycrystalline diamond thin films prepared via chemical vapor deposition are very similar to those in monocrystalline diamond thereby opening the door for their application in diamond photonics and sensing.

Broadband and fine-structured luminescence in diamond facilitated by femtosecond laser driven electron impact and injection of "vacancy-interstitial" pairs

Ultrafast heating of photoionized free electrons by high-numerical-aperture (0.25-0.65) focused visible-range ultrashort laser pulses provides their resonant impact trapping into intra-gap electronic states of point defect centers in a natural IaA/B diamond with a high concentration of poorly aggregated nitrogen impurity atoms. This excites fine-structured, broadband (UV-near-infrared) polychromatic luminescence of the centers over the entire bandgap. The observed luminescence spectra revealed substitutional nitrogen interaction with non-equilibrium intrinsic carbon vacancies, produced simultaneously as Frenkel "vacancy-interstitial" pairs during the laser exposure.